JPS6236528U - - Google Patents
Info
- Publication number
- JPS6236528U JPS6236528U JP12757485U JP12757485U JPS6236528U JP S6236528 U JPS6236528 U JP S6236528U JP 12757485 U JP12757485 U JP 12757485U JP 12757485 U JP12757485 U JP 12757485U JP S6236528 U JPS6236528 U JP S6236528U
- Authority
- JP
- Japan
- Prior art keywords
- hole
- transfer
- communicating
- movable body
- filling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図ないし第４図はこの考案の液相エピタキ
シヤル成長装置の実施例を示し、第１図ないし第
３図はそれぞれ１実施例の異なる状態における切
断正面図、第４図は他の実施例の一部の断面図、
第５図および第６図はそれぞれ従来の液相エピタ
キシヤル成長装置の切断正面図および斜視図であ
る。
１……装置本体、２……移動孔、３……充填穴
、４……半導体溶液、５，１０……移動体、６，
１１……半導体基板、７，１２……嵌挿穴、１３
，１６……溜り穴、１４，１７……連通孔。
1 to 4 show an embodiment of the liquid phase epitaxial growth apparatus of this invention, FIGS. 1 to 3 are cutaway front views of one embodiment in different states, and FIG. 4 is a diagram showing another embodiment. A cross-sectional view of part of the example,
FIGS. 5 and 6 are a cutaway front view and a perspective view, respectively, of a conventional liquid phase epitaxial growth apparatus. DESCRIPTION OF SYMBOLS 1... Apparatus body, 2... Moving hole, 3... Filling hole, 4... Semiconductor solution, 5, 10... Moving body, 6,
11... Semiconductor substrate, 7, 12... Fitting hole, 13
, 16... Reservoir hole, 14, 17... Communication hole.
Claims (1)
記本体の上面に前記移動孔に連通して形成され半
導体溶液が充填される充填穴と、前記移動孔の下
側に前記移動孔に連通して形成された溜り穴と、
前記移動孔に移動自在に設けられた移動体と、前
記移動体の上面に形成された嵌挿穴に嵌挿された
半導体基板と、前記嵌挿穴の一側に前記移動体を
上下に貫通し前記充填穴と前記溜り穴とを連通す
る連通孔とを備えた液相エピタキシヤル成長装置
。 A transfer hole formed horizontally in the device body, a filling hole formed on the top surface of the main body communicating with the transfer hole and filled with a semiconductor solution, and a filling hole communicating with the transfer hole below the transfer hole. A reservoir hole formed by
a movable body movably provided in the movable hole; a semiconductor substrate fitted into a fitting hole formed on the upper surface of the movable body; and a semiconductor substrate on one side of the fitting hole that vertically penetrates the movable body. A liquid phase epitaxial growth apparatus comprising a communication hole communicating the filling hole and the reservoir hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12757485U JPS6236528U (en) | 1985-08-20 | 1985-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12757485U JPS6236528U (en) | 1985-08-20 | 1985-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6236528U true JPS6236528U (en) | 1987-03-04 |
Family
ID=31022455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12757485U Pending JPS6236528U (en) | 1985-08-20 | 1985-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236528U (en) |
-
1985
- 1985-08-20 JP JP12757485U patent/JPS6236528U/ja active Pending