JPS6237914B2 - - Google Patents

Info

Publication number
JPS6237914B2
JPS6237914B2 JP56194987A JP19498781A JPS6237914B2 JP S6237914 B2 JPS6237914 B2 JP S6237914B2 JP 56194987 A JP56194987 A JP 56194987A JP 19498781 A JP19498781 A JP 19498781A JP S6237914 B2 JPS6237914 B2 JP S6237914B2
Authority
JP
Japan
Prior art keywords
layer
active layer
current blocking
inp
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56194987A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5896790A (ja
Inventor
Mitsuhiro Kitamura
Ikuo Mito
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56194987A priority Critical patent/JPS5896790A/ja
Publication of JPS5896790A publication Critical patent/JPS5896790A/ja
Publication of JPS6237914B2 publication Critical patent/JPS6237914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP56194987A 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法 Granted JPS5896790A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56194987A JPS5896790A (ja) 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194987A JPS5896790A (ja) 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS5896790A JPS5896790A (ja) 1983-06-08
JPS6237914B2 true JPS6237914B2 (fr) 1987-08-14

Family

ID=16333652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194987A Granted JPS5896790A (ja) 1981-12-03 1981-12-03 埋め込みへテロ構造半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS5896790A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202581A (ja) * 1985-09-12 1987-09-07 Agency Of Ind Science & Technol 半導体レーザとその製造方法
GB8913070D0 (en) * 1989-06-07 1989-07-26 Bt & D Technologies Ltd Semiconductor device
JP3950604B2 (ja) * 1999-12-28 2007-08-01 日本オプネクスト株式会社 半導体レーザ装置、半導体レーザアレー装置及び光伝送装置

Also Published As

Publication number Publication date
JPS5896790A (ja) 1983-06-08

Similar Documents

Publication Publication Date Title
JPH11330605A (ja) 半導体レーザ
JPH07226566A (ja) 量子井戸半導体レーザおよびその製造方法
JP3488137B2 (ja) 光半導体装置およびその製造方法
JPS61164287A (ja) 半導体レ−ザ
JP2550714B2 (ja) 高抵抗半導体層埋め込み型半導体レーザ
JP3108183B2 (ja) 半導体レーザ素子とその製造方法
JPS6237913B2 (fr)
JPS5896790A (ja) 埋め込みへテロ構造半導体レ−ザの製造方法
JPH0462195B2 (fr)
JP2869995B2 (ja) 高抵抗半導体層埋め込み型半導体レーザの製造方法
JPS6248919B2 (fr)
JPH05218585A (ja) 半導体発光装置
JPH05235481A (ja) 半導体発光装置およびその製造方法
JP2555984B2 (ja) 半導体レーザおよびその製造方法
JPS641073B2 (fr)
JP3295932B2 (ja) 半導体レーザ素子
JPS641072B2 (fr)
JP2956255B2 (ja) リッジ導波型半導体レーザの製造方法
JPH03174793A (ja) 半導体レーザ
JPS596588A (ja) 半導体レ−ザ
JP2708949B2 (ja) 半導体レーザ装置の製造方法
JPH1140897A (ja) 半導体レーザ素子及びその製造方法
JP2855887B2 (ja) 半導体レーザ及びその製造方法
JP3276674B2 (ja) 半導体レーザ素子
JPS6261383A (ja) 半導体レ−ザおよびその製造方法