JPS6238866B2 - - Google Patents
Info
- Publication number
- JPS6238866B2 JPS6238866B2 JP57219917A JP21991782A JPS6238866B2 JP S6238866 B2 JPS6238866 B2 JP S6238866B2 JP 57219917 A JP57219917 A JP 57219917A JP 21991782 A JP21991782 A JP 21991782A JP S6238866 B2 JPS6238866 B2 JP S6238866B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- hole
- lid
- electrode
- convex portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
- H10W76/42—Fillings
- H10W76/47—Solid or gel fillings
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明は半導体素子をケース内に樹脂封止する
とともに、蓋体にて密封する半導体装置の製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device in which a semiconductor element is sealed in a case with a resin and sealed with a lid.
一般に素子をケース内に樹脂封止する場合、外
部との接続のために素子より電極を取り出さなけ
ればならないが、この電極はモールド用ケースの
蓋体に設けられた孔を介して外部へ導かれるた
め、電極と孔との気密性を保ち素子が外部雰囲気
による悪影響を受けないようにすることが肝要で
ある。 Generally, when an element is sealed with resin inside a case, electrodes must be taken out from the element for connection to the outside, but these electrodes are led to the outside through holes provided in the lid of the molding case. Therefore, it is important to maintain airtightness between the electrode and the hole so that the device is not adversely affected by the external atmosphere.
従来この気密性を保つ手段として、蓋体の電極
が貫通する孔に外部より種々の封止剤を塗布した
り、蓋体の裏面に孔をとりまく凸部を設けること
により凸部が樹脂に食い込むようにして外部雰囲
気を遮断していた。しかしながら前者は余分な工
程を必要とするため作業性が悪く、また両者とも
電極と孔との隙間が狭いため、封止剤あるいは樹
脂が入りにくく信頼性に乏しいという欠点があつ
た。 Conventional methods for maintaining this airtightness include applying various sealants from the outside to the hole through which the electrode passes through the lid, or providing a protrusion surrounding the hole on the back of the lid so that the protrusion bites into the resin. In this way, the outside atmosphere was blocked off. However, the former method requires an extra step, resulting in poor workability.Also, in both cases, the gap between the electrode and the hole is narrow, making it difficult for the sealant or resin to enter, resulting in poor reliability.
本発明は上記に鑑みなされたものであり、その
要旨とするところは、モールド用ケースの蓋体の
電極貫通部に、外方に向かつて先細りの孔を持つ
た凸部を設け、未硬化の樹脂に該凸部を押し込ん
で樹脂を孔内の上部に這い上がらせることによ
り、装置の気密性を高め素子を外部より保護した
点にある。 The present invention has been made in view of the above, and its gist is that a convex portion having an outwardly tapered hole is provided in the electrode penetration portion of the lid of the molding case, and an uncured By pushing the convex portion into the resin and causing the resin to creep up into the upper part of the hole, the airtightness of the device is improved and the element is protected from the outside.
以下に本発明の原理を、蓋体の電極貫通部に設
けられ、外方に向かつて先細りの孔を有する凸部
の拡大断面図を示す第1図を参照して説明する。 The principle of the present invention will be explained below with reference to FIG. 1, which shows an enlarged cross-sectional view of a convex portion provided in the electrode penetration portion of the lid and having an outwardly tapered hole.
半導体素子を封止した直後の樹脂1は適度に粘
性を有する軟化状態であるから、これに外方に向
かつて先細りの孔を有する蓋体2の凸部3を押し
込むと、凸部3の内孔5は広口であるから、樹脂
1aは電極4に沿つて比較的容易に孔内へ侵入す
る。この時内孔5はその径が順次狭くなるように
形成されているため、内孔5へ侵入した樹脂1a
は樹脂1と空間6との境界線Aと、凸部3の内側
先端部3aを通る垂線Bとから囲まれる凸部の内
側部分3b(二点鎖線で示す)に相応した体積分
だけ高さ方向に這い上がる。したがつて電極4と
樹脂1aとの接触部分が大きくなり内孔5と電極
4との径の差により生じた隙間が樹脂1aにより
十分満たされ、気密が保たれる。凸部3の内孔5
が広口であるため、樹脂1aが容易に孔内へ侵入
することも相俟つて本発明によれば装置の気密性
が向上する。 Immediately after sealing the semiconductor element, the resin 1 is in a softened state with appropriate viscosity, so when the convex part 3 of the lid body 2 having an outwardly tapered hole is pushed into it, the inside of the convex part 3 is pressed. Since the hole 5 has a wide opening, the resin 1a penetrates into the hole along the electrode 4 relatively easily. At this time, since the inner hole 5 is formed so that its diameter becomes gradually narrower, the resin 1a that has entered the inner hole 5
is a height corresponding to the volume corresponding to the inner portion 3b (indicated by the two-dot chain line) of the convex portion surrounded by the boundary line A between the resin 1 and the space 6 and the perpendicular line B passing through the inner tip 3a of the convex portion 3. Crawling up in the direction. Therefore, the contact area between the electrode 4 and the resin 1a becomes large, and the gap created by the difference in diameter between the inner hole 5 and the electrode 4 is sufficiently filled with the resin 1a, and airtightness is maintained. Inner hole 5 of convex portion 3
Since the hole is wide, the resin 1a easily enters the hole, and the present invention improves the airtightness of the device.
次に本発明の一実施例を第2図に示す半導体装
置の断面図を参照して説明する。 Next, an embodiment of the present invention will be described with reference to a cross-sectional view of a semiconductor device shown in FIG.
2は電極4の貫通部としての孔7を有する蓋体
であり、この蓋体2の裏面には孔7をとりまく凸
部3が設けられており、孔7に連なる凸部3の内
孔5はその先端から順次狭くなるように形成され
ている。8は基板9に搭載され電極4が接続され
た半導体素子であり、素子8を囲むようにして枠
体10を基板に取り付け蓋体2とともにモールド
用ケースを構成している。そしてこのケースに樹
脂1を充填すれば、この直後から樹脂1の硬化反
応が進行する。 Reference numeral 2 denotes a lid body having a hole 7 as a penetration part for the electrode 4, and a protrusion 3 surrounding the hole 7 is provided on the back surface of the lid body 2. is formed so that it becomes gradually narrower from its tip. Reference numeral 8 denotes a semiconductor element mounted on a substrate 9 and connected to an electrode 4. A frame 10 is attached to the substrate so as to surround the element 8, and together with the lid 2 constitutes a molding case. Immediately after this case is filled with resin 1, the curing reaction of resin 1 proceeds.
本実施例は上記注入された樹脂が硬化する以前
のまだ粘性を有する軟化状態のとき、前記凸部3
を樹脂1に押し込むようにして、蓋体2を枠体1
0に固着することにより凸部3の内孔5に樹脂1
を侵入させ、蓋体2によるケースの密封と同時に
内孔5と電極4との隙間の気密をはかつている。 In this embodiment, when the injected resin is in a softened state and still has viscosity before hardening, the convex portion 3
into the resin 1, and place the lid 2 on the frame 1.
0, the resin 1 is inserted into the inner hole 5 of the convex portion 3.
The cover body 2 seals the case, and at the same time, the gap between the inner hole 5 and the electrode 4 is made airtight.
第3図、第4図は本発明の変形例を説明するた
めの蓋体の凸部拡大断面図であり、それぞれ凸部
の内孔形状が第2図実施例に限定されないことを
示している。すなわち、第3図は凸部3の先端を
鋭角とし、内孔11に設けられる傾斜部を樹脂1
の水平面までとした構造であり、第4図は凸部3
の内孔12に設けられる傾斜部を曲線状に構成す
ることにより、孔内の隙間を樹脂が侵入可能な範
囲で小さくし、その這い上がりを高め気密性を向
上せんとしたものである。 FIGS. 3 and 4 are enlarged cross-sectional views of the convex portion of the lid body for explaining modified examples of the present invention, and each shows that the inner hole shape of the convex portion is not limited to the embodiment shown in FIG. 2. . That is, in FIG. 3, the tip of the convex part 3 is made at an acute angle, and the inclined part provided in the inner hole 11 is made with the resin 1.
Figure 4 shows the convex portion 3.
By configuring the inclined portion provided in the inner hole 12 in a curved shape, the gap within the hole is made as small as possible to allow the resin to enter, thereby increasing the creeping up of the resin and improving airtightness.
第5図は本発明に係る半導体装置の一例を示す
斜視図であり、同図では半導体素子を同一ケース
に複数個収納しており、また電極4は蓋体2より
突出した位置で折り曲げられている。このように
素子を複数個収納する場合には、蓋体2の孔7も
素子の数だけ必要となり、それだけ気密性が要求
されてくるが、本発明によれば素子の保護手段と
しての樹脂と、蓋体によるケースの密封と同時に
その気密手段として利用するため、孔の数とは無
関係にばらつきのない均一な封止をしかも特別な
工程を必要とせずに行なうことが可能となる。 FIG. 5 is a perspective view showing an example of the semiconductor device according to the present invention, in which a plurality of semiconductor elements are housed in the same case, and the electrode 4 is bent at a position protruding from the lid 2. There is. When a plurality of elements are housed in this manner, the number of holes 7 in the lid body 2 equal to the number of elements is required, and airtightness is required accordingly.However, according to the present invention, the resin is used as a protection means for the elements. Since the lid body is used as an airtight means at the same time as sealing the case, it is possible to achieve uniform sealing regardless of the number of holes and without requiring any special process.
更にまた本発明の特徴とする凸部3の広口の内
孔5は、蓋体2を枠体10に固着する際に電極4
を外部へ導く案内手段としての付随効果を有す
る。これは電極4を蓋体2より複数個突出する際
には、作業性の面からの効果は大きい。 Furthermore, the wide inner hole 5 of the convex portion 3, which is a feature of the present invention, allows the electrode 4 to be inserted when the lid body 2 is fixed to the frame body 10.
It has an accompanying effect as a guide means for guiding the material to the outside. This has a great effect in terms of workability when a plurality of electrodes 4 are protruded from the lid 2.
以上の説明から明らかな様に本発明によれば、
電極が貫通した蓋体孔内への樹脂の侵入を容易に
しその気密性を向上したため、外部雰囲気による
影響を受けない信頼性の高い半導体装置を容易に
得ることが可能となる。 As is clear from the above description, according to the present invention,
Since the resin can easily penetrate into the lid hole through which the electrode penetrates and its airtightness has been improved, it becomes possible to easily obtain a highly reliable semiconductor device that is not affected by the external atmosphere.
第1図は本発明の原理を説明する蓋体の凸部拡
大断面図、第2図は本発明の一実施例を説明する
半導体装置の断面図、第3図、第4図は本発明の
変形例を説明するための蓋体の凸部拡大断面図、
第5図は本発明に係る半導体装置の一例を示す斜
視図である。
1……樹脂、2……蓋体、3……凸部、4……
電極、5……内孔、7……孔、8……半導体素
子、9……基板、10……枠体。
FIG. 1 is an enlarged sectional view of a convex portion of a lid body to explain the principle of the present invention, FIG. 2 is a sectional view of a semiconductor device to explain an embodiment of the present invention, and FIGS. 3 and 4 are An enlarged cross-sectional view of a convex portion of a lid body for explaining a modified example,
FIG. 5 is a perspective view showing an example of a semiconductor device according to the present invention. 1...Resin, 2...Lid, 3...Protrusion, 4...
Electrode, 5... Inner hole, 7... Hole, 8... Semiconductor element, 9... Substrate, 10... Frame.
Claims (1)
方に向かつて先細りの孔を持つた凸部を設け、未
硬化の樹脂に該凸部を押し込んで樹脂を孔内の上
部にまで這い上がらせることを特徴とする半導体
装置の製造方法。1. A convex part with an outwardly tapered hole is provided in the electrode penetration part of the lid of the mold case, and the convex part is pushed into the uncured resin to cause the resin to creep up to the upper part of the hole. A method of manufacturing a semiconductor device, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57219917A JPS59110141A (en) | 1982-12-15 | 1982-12-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57219917A JPS59110141A (en) | 1982-12-15 | 1982-12-15 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110141A JPS59110141A (en) | 1984-06-26 |
| JPS6238866B2 true JPS6238866B2 (en) | 1987-08-20 |
Family
ID=16743042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57219917A Granted JPS59110141A (en) | 1982-12-15 | 1982-12-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110141A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0787230B2 (en) * | 1988-05-24 | 1995-09-20 | 三菱電機株式会社 | Semiconductor device |
| JP4053257B2 (en) * | 2001-06-14 | 2008-02-27 | 新光電気工業株式会社 | Manufacturing method of semiconductor device |
| CN110603638B (en) * | 2017-05-10 | 2023-04-18 | 三菱电机株式会社 | Semiconductor device, method for manufacturing same, power conversion device, and moving object |
| JP7247124B2 (en) | 2020-01-07 | 2023-03-28 | 三菱電機株式会社 | semiconductor module |
| EP4270466A1 (en) * | 2022-04-25 | 2023-11-01 | Infineon Technologies AG | Power semiconductor module arrangements and methods for producing power semiconductor module arrangements |
-
1982
- 1982-12-15 JP JP57219917A patent/JPS59110141A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59110141A (en) | 1984-06-26 |
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