JPS6239837B2 - - Google Patents
Info
- Publication number
- JPS6239837B2 JPS6239837B2 JP55162473A JP16247380A JPS6239837B2 JP S6239837 B2 JPS6239837 B2 JP S6239837B2 JP 55162473 A JP55162473 A JP 55162473A JP 16247380 A JP16247380 A JP 16247380A JP S6239837 B2 JPS6239837 B2 JP S6239837B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- optical fiber
- light
- quarter
- wave plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Description
【発明の詳細な説明】
この発明は光フアイバ通信における半導体レー
ザと光フアイバの結合装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a coupling device for a semiconductor laser and an optical fiber in optical fiber communication.
半導体レーザは、小型で低電圧発振が可能であ
り、しかも直接変調ができることなどから、光通
信の光源として発光ダイオードとともに重要な素
子である。しかしながら外部の反射状によつて戻
つて来た半導体レーザの出力光を活性層に再結合
させると自己結合効果と呼ばれる現象が生じる。
これは、戻り光によつて電流―光出力特性の直線
性の劣化や光出力の増加、さらには半導体レーザ
の発振スペクトルの変化をもたらし、S/N比の
劣化の原因となり、光通信においてははなはだ不
都合な現象である。 Semiconductor lasers are small, capable of low-voltage oscillation, and can be directly modulated, so they are important elements along with light-emitting diodes as light sources for optical communications. However, when the output light of the semiconductor laser that returns due to external reflection is recombined into the active layer, a phenomenon called a self-coupling effect occurs.
This causes the return light to degrade the linearity of the current-optical output characteristics, increase the optical output, and change the oscillation spectrum of the semiconductor laser, causing a deterioration of the S/N ratio, which is a problem in optical communications. This is a very inconvenient phenomenon.
ところで光フアイバは、コアと呼ばれる屈折率
の高い部分と、クラツドと呼ばれる屈折率の低い
部分から構成されたガラス繊維からなり、コア層
とクラツド層との境界で光を全反射させながら伝
搬させる光の伝送路として用いられるものであ
る。 By the way, an optical fiber is made of glass fiber consisting of a part with a high refractive index called the core and a part with a low refractive index called the cladding, and the light propagates while being totally reflected at the boundary between the core layer and the cladding layer. It is used as a transmission line.
全反射のくり返しにより導波される光がモード
と呼ばれるのに倣つて、コアとクラツドの境界で
異なる角度で反射され多数のモードが伝搬される
光フアイバを、マルチモード光フアイバと呼んで
いる。光通信の場合に、たとえば、半導体レーザ
のようなレーザ光源からのコヒーレントな光をマ
ルチモード光フアイバを使つて伝送させると、モ
ード間で位相速度が異なるため、光フアイバの
種々の伝搬モード間の干渉が起り、光フアイバか
らの出射光を観察するとスペツクルと呼ばれる斑
点模様が現われる。これによつて生じる雑音をス
ペツクル強度雑音と呼んでいる。 Since light guided through repeated total reflections is called a mode, an optical fiber in which multiple modes are propagated by being reflected at different angles at the boundary between the core and the cladding is called a multimode optical fiber. In the case of optical communication, for example, when coherent light from a laser light source such as a semiconductor laser is transmitted using a multimode optical fiber, the phase velocity differs between the modes, so the difference between the various propagation modes of the optical fiber is Interference occurs, and when the light emitted from the optical fiber is observed, a speckled pattern appears. The noise caused by this is called speckle intensity noise.
このスペツクリング現象は、光フアイバの振動
や、光源の波長のゆらぎ、たとえば半導体レーザ
がシングルモード発振でも電流、温度によつて波
長が変化することなどによつて空間的、時間的に
変化する。このため、とくに光フアイバに接続箇
所、たとえばコネクタ接続やスプライシングがあ
ると、その接続点でスペツクルの欠落が生じ、そ
れが時間的に変動するため、アナログ信号を伝送
した場合に大幅にS/N比の劣化をもたらす。マ
ルチモード光フアイバをコヒーレントな光が伝搬
すると、上記スペツクリグ現象は避けられないの
で、光フアイバ通信に半導体レーザを使用する場
合には上記スペツクルを低減させる対策を講じる
必要がある。 This speckling phenomenon changes spatially and temporally due to vibrations of the optical fiber, fluctuations in the wavelength of the light source, and even when a semiconductor laser oscillates in a single mode, the wavelength changes depending on current and temperature. For this reason, especially when an optical fiber has a connection point, such as a connector connection or splicing, speckle loss occurs at that connection point, and this changes over time, resulting in a significant S/N difference when transmitting an analog signal. resulting in a deterioration of the ratio. When coherent light propagates through a multimode optical fiber, the speckle phenomenon described above is unavoidable, so when using a semiconductor laser for optical fiber communication, it is necessary to take measures to reduce the speckle.
この発明は上記事情に鑑みてなされたもので、
光フアイバ通信において、半導体レーザを光源と
した場合に生じる反射による戻り光の影響および
スペツクルによるノイズを、比較的簡単な構成に
より低減させることができる半導体レーザと光フ
アイバの結合装置を提供することを目的としてい
る。 This invention was made in view of the above circumstances,
An object of the present invention is to provide a coupling device for a semiconductor laser and an optical fiber, which can reduce the influence of return light due to reflection and noise due to speckle, which occur when a semiconductor laser is used as a light source, with a relatively simple configuration in optical fiber communication. The purpose is
以下、この発明の一実施例を図面について説明
する。第1図において、1は半導体レーザ、2は
半導体レーザ1と後述する光フアイバ5との間に
設置された結合レンズである。3は上記結合レン
ズ2を介して半導体レーザ1からの光を受ける偏
光板であり、この偏光板3は上記半導体レーザ1
の接合面と平行な電界成分の光を通すように配置
されている。4は4分の1波長板であり、水晶の
ような透明圧電性結晶からなり、上記半導体レー
ザ1の接合面に対して光軸が45度の角度をなすよ
うに配置されている。この4分の1波長板4の前
後両面には透明電極4a,4aがそれぞれ設けら
れており、各電極4a,4aにはリード端子4
b,4bが固設されている。5は光フアイバ、6
は上記4分の1波長板4を振動させるための電界
を印加する高周波発振回路である。 An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, 1 is a semiconductor laser, and 2 is a coupling lens installed between the semiconductor laser 1 and an optical fiber 5, which will be described later. 3 is a polarizing plate that receives light from the semiconductor laser 1 via the coupling lens 2;
It is arranged so that light with an electric field component parallel to the bonding surface passes through. Reference numeral 4 denotes a quarter wavelength plate, which is made of a transparent piezoelectric crystal such as quartz, and is arranged so that its optical axis forms an angle of 45 degrees with respect to the bonding surface of the semiconductor laser 1. Transparent electrodes 4a, 4a are provided on both the front and rear surfaces of the quarter-wave plate 4, and each electrode 4a, 4a has a lead terminal 4.
b, 4b are fixedly installed. 5 is optical fiber, 6
is a high frequency oscillation circuit that applies an electric field to vibrate the quarter wavelength plate 4.
つぎに上記構成の動作について説明する。 Next, the operation of the above configuration will be explained.
光学的異方性を持つ結晶、たとえば、一軸結晶
の屈折率楕円体は
X2+Y2/n0 2+Z2/ne 2=1 ……(1)
n0=nx=ny……常光線
ne=nz……異常光線
で表わされる。 The refractive index ellipsoid of a crystal with optical anisotropy, for example, a uniaxial crystal, is X 2 + Y 2 /n 0 2 +Z 2 /n e 2 =1 ... (1) n 0 = n x = n y ... Ordinary ray ne = n z ...Represented by extraordinary ray.
屈折率楕円体の主軸をX,Y,Z、この結晶の
Y軸方向の厚さをDとする。X軸方向に振動して
いる電界成分の光に対する屈折率はnx、したが
つて厚さDの結晶板を通過するのに要する時間t
xは、tx=D/(c/nx)で表わされる。ここ
でcは真空中の光速である。同様にZ軸方向に振
動している光の通過時間txはtz=D/(c/n
z)となる。よつて、光の角周波数をωとすると
位相差ΔはΔ=ω(tx―tz)となる。ここでω
=2πc/λ0であるから、位相差Δは次のよう
に与えられる。 The principal axes of the refractive index ellipsoid are X, Y, and Z, and the thickness of this crystal in the Y-axis direction is D. The refractive index for light of the electric field component vibrating in the X-axis direction is n x , so the time required to pass through the crystal plate of thickness D is t
x is expressed as t x =D/(c/n x ). Here c is the speed of light in vacuum. Similarly, the transit time t x of light vibrating in the Z-axis direction is t z =D/(c/n
z ). Therefore, when the angular frequency of light is ω, the phase difference Δ is Δ=ω(t x −t z ). Here ω
=2πc/ λ0 , so the phase difference Δ is given as follows.
Δ=2π/λ0(nx―nz)D ……(2)
入射直線偏光の振動面が結晶板のX軸およびZ
軸となす角がθ=45度の場合、位相差Δがπ/2
となるような厚さDを持つとすると(4分の1波
長板と呼ばれる)円偏光が得られる。そこで、第
2図のように4分の1波長板3の光源側と反対側
に鏡7を置くと反射して戻つてきた光は入射光の
直線偏光の振動面と垂直になる。これは往復で位
相差Δがπ、すなわち2分の1波長板を通つたこ
とと等価である。 Δ=2π/λ 0 (n x - n z )D...(2) The vibration plane of the incident linearly polarized light is on the X-axis and Z-axis of the crystal plate.
If the angle with the axis is θ = 45 degrees, the phase difference Δ is π/2
If the thickness D is such that (referred to as a quarter-wave plate) circularly polarized light is obtained. Therefore, if a mirror 7 is placed on the side opposite to the light source side of the quarter-wave plate 3 as shown in FIG. 2, the reflected light will be perpendicular to the plane of vibration of the linearly polarized light of the incident light. This is equivalent to the phase difference Δ being π in the round trip, that is, passing through a half-wave plate.
半導体レーザ1から出た光は接合面と平行な電
界成分を通す偏光板3によつて半導体レーザの接
合面と平行な電界成分を持つ光(TEモード光)
だけが透過され、垂直な電界成分を持つ光(TM
モード光)は阻止される。このため、半導体レー
ザ1からの出射光は結合用レンズ2、偏光板3、
4分の1波長板4を通つて光フアイバ5に結合さ
れ、一部端面で反射された光は再び4分の1波長
板4を通り入射時と垂直な電界成分をもつ偏光に
変換され、偏光板3を通過することができない。 The light emitted from the semiconductor laser 1 is converted into light having an electric field component parallel to the junction surface of the semiconductor laser (TE mode light) by the polarizing plate 3 which passes the electric field component parallel to the junction surface.
Only the light that is transmitted and has a vertical electric field component (TM
mode light) is blocked. Therefore, the light emitted from the semiconductor laser 1 is transmitted through the coupling lens 2, the polarizing plate 3,
The light that is coupled to the optical fiber 5 through the quarter-wave plate 4 and partially reflected at the end face passes through the quarter-wave plate 4 again and is converted into polarized light having an electric field component perpendicular to the incident light. It cannot pass through the polarizing plate 3.
半導体レーザの発振光の偏光は一般にTEモー
ドであることが知られており、実際に通常TEモ
ードで発振しているレーザ光の偏光比TE/TM
=Ey 2/Ex 2は10ないし数十で偏つていること
がわかる。したがつて、偏光板3による透過損失
は少なく、反射による戻り光を阻止するアイソレ
ータとしての機能を果すことができる。 It is generally known that the polarization of the oscillated light of a semiconductor laser is the TE mode, and the polarization ratio TE/TM of the laser light actually oscillated in the TE mode is
It can be seen that =E y 2 /E x 2 is biased at 10 to several tens. Therefore, the transmission loss due to the polarizing plate 3 is small, and the polarizing plate 3 can function as an isolator to prevent return light due to reflection.
さらに、4分の1波長板4を水晶のような圧電
性単結晶で構成してあるから、電界を加えること
によつて圧電気逆効果により上記4分の1波長板
4にひずみおよび応力が生じ、この効果によつて
4分の1波長板4は振動素子として作用する。す
なわち、4分の1波長板4の前後両面にそれぞれ
透明電極4a,4aを設け、さらに各電極4a,
4aにそれぞれリード線4b,4bを取り付け
て、高周波発振回路6を付加することにより、4
分の1波長板4を固有の振動数でもつて振動させ
ることができる。この圧電性結晶により構成され
た4分の1波長板4を振動させると、半導体レー
ザ1の光の光フアイバ5の入射面での位相等入射
条件を周期的に変えることになり、光フアイバ5
内での干渉条件が変わり、スペツクルの位置およ
び形状が変わることになる。したがつて、信号の
変調周波数よりも高い周波数で振動させることに
より、光フアイバ5内のスペツクルを平滑化し、
スペツクル雑音を低減化することがきる。そして
受信機において、ローパスフイルタを通すことに
より、振動子の周波数成分を除去すればよい。 Furthermore, since the quarter-wave plate 4 is made of a piezoelectric single crystal such as quartz, applying an electric field causes strain and stress on the quarter-wave plate 4 due to a piezoelectric reverse effect. This effect causes the quarter-wave plate 4 to act as a vibrating element. That is, transparent electrodes 4a, 4a are provided on both the front and rear surfaces of the quarter-wave plate 4, and each electrode 4a,
By attaching lead wires 4b and 4b to 4a and adding a high frequency oscillation circuit 6,
The half-wave plate 4 can be vibrated at a specific frequency. When the quarter-wave plate 4 made of this piezoelectric crystal is vibrated, the incident conditions such as the phase of the light from the semiconductor laser 1 on the incident surface of the optical fiber 5 are periodically changed.
The interference conditions within the speckle will change, and the position and shape of the speckle will change. Therefore, by vibrating at a frequency higher than the modulation frequency of the signal, the speckle in the optical fiber 5 is smoothed,
Speckle noise can be reduced. Then, in the receiver, the frequency component of the vibrator may be removed by passing it through a low-pass filter.
ところで、4分の1波長板4としては、振動子
として利用することや製造の容易化を考慮に入
れ、(2m+1)・λ/4(m=0、1、2……、λは
波長)に相当する厚さにするのが好ましい。 By the way, the quarter wavelength plate 4 is (2m+1)・λ/4 (m=0, 1, 2..., λ is the wavelength), taking into consideration its use as a vibrator and ease of manufacturing. Preferably, the thickness corresponds to .
また、偏光板3は通常の偏光板でも、グラン・
トムソン・プリズムやローシヨン・プリズムとい
つた偏光プリズムでもよく、レンズ2は通常の光
学レンズでも屈折率が半径の2乗に反比例して減
少する屈折率分布形レンズでもよい。 In addition, the polarizing plate 3 may be a normal polarizing plate or a grand polarizing plate.
The lens 2 may be a polarizing prism such as a Thomson prism or a Roschon prism, and the lens 2 may be a normal optical lens or a gradient index lens whose refractive index decreases in inverse proportion to the square of the radius.
さらに、4分の1波長板として利用できる透明
圧電性結晶としては水晶の他、LiNbO3、LiTaO3
等がある。 Furthermore, in addition to crystal, LiNbO 3 and LiTaO 3 are transparent piezoelectric crystals that can be used as quarter-wave plates.
etc.
なお上記実施例では4分の1波長板の透明電極
部に光を通過させる場合について述べたが、光の
通過部分のみに窓をあけた非透明電極でも構成さ
せることができる。 In the above embodiment, a case has been described in which light is allowed to pass through the transparent electrode portion of the quarter-wave plate, but a non-transparent electrode having a window formed only in the portion through which light passes may also be used.
以上のようにこの発明によれば偏光板や、圧電
性結晶からなる4分の1波長板を用いる簡単な構
成により、戻り光の半導体レーザへの悪影響をな
くし、しかもスペツクルの平滑化を図り得る半導
体レーザと光フアイバの結合装置を提供すること
ができる。 As described above, according to the present invention, with a simple configuration using a polarizing plate or a quarter-wave plate made of piezoelectric crystal, it is possible to eliminate the adverse effects of returned light on the semiconductor laser and to smooth the speckle. A device for coupling a semiconductor laser and an optical fiber can be provided.
第1図はこの発明の一実施例による半導体レー
ザと光フアイバの結合装置の一例を示す斜視図、
第2図はこの発明の原理の一部を説明するための
斜視図である。
1……半導体レーザ、2……結合用レンズ、3
……偏光板、4……4分の1波長板、4a……電
極、5……光フアイバ、6……高周波発振回路。
なお、図中、同一符号は同一、又は相当部分を示
す。
FIG. 1 is a perspective view showing an example of a semiconductor laser and optical fiber coupling device according to an embodiment of the present invention;
FIG. 2 is a perspective view for explaining part of the principle of the invention. 1... Semiconductor laser, 2... Coupling lens, 3
...Polarizing plate, 4... Quarter wavelength plate, 4a... Electrode, 5... Optical fiber, 6... High frequency oscillation circuit.
In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
た結合用レンズと、該半導体レーザの接合面と平
行な電界成分の光を通すように配置された偏光板
と、前後両面に電極を有し、かつ該接合面に対し
て光軸が45度の角度をなすように配置された透明
圧電性結晶からなる4分の1波長板と、該4分の
1波長板を振動させるために上記電極間に電界を
印加する高周波発振回路とを具備した半導体レー
ザと光フアイバの結合装置。 2 上記透明圧電性結晶からなる4分の1波長板
を振動子として動作させた際の振動周波数を、上
記半導体レーザに印加する信号電流の周波数帯域
よりも高く設定してなる特許請求の範囲第1項記
載の半導体レーザと光フアイバの結合装置。[Scope of Claims] 1. A coupling lens provided between a semiconductor laser and an optical fiber, a polarizing plate arranged to pass light having an electric field component parallel to the bonded surface of the semiconductor laser, and both front and rear surfaces. A quarter-wave plate made of a transparent piezoelectric crystal, which has an electrode on the surface and is arranged so that the optical axis makes an angle of 45 degrees with respect to the bonded surface, and the quarter-wave plate is vibrated. and a high-frequency oscillation circuit that applies an electric field between the electrodes in order to generate a semiconductor laser and an optical fiber. 2. Claim No. 2, wherein the vibration frequency when the quarter-wave plate made of the transparent piezoelectric crystal is operated as a vibrator is set higher than the frequency band of the signal current applied to the semiconductor laser. A device for coupling a semiconductor laser and an optical fiber according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55162473A JPS5785278A (en) | 1980-11-17 | 1980-11-17 | Coupler for semiconductor laser and optical fiber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55162473A JPS5785278A (en) | 1980-11-17 | 1980-11-17 | Coupler for semiconductor laser and optical fiber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5785278A JPS5785278A (en) | 1982-05-27 |
| JPS6239837B2 true JPS6239837B2 (en) | 1987-08-25 |
Family
ID=15755288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55162473A Granted JPS5785278A (en) | 1980-11-17 | 1980-11-17 | Coupler for semiconductor laser and optical fiber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5785278A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002026439A (en) * | 2000-07-03 | 2002-01-25 | Denso Corp | Semiconductor light emitting device |
-
1980
- 1980-11-17 JP JP55162473A patent/JPS5785278A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5785278A (en) | 1982-05-27 |
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