JPS6242503A - Magnetic film for magnetic bubble element - Google Patents
Magnetic film for magnetic bubble elementInfo
- Publication number
- JPS6242503A JPS6242503A JP60181067A JP18106785A JPS6242503A JP S6242503 A JPS6242503 A JP S6242503A JP 60181067 A JP60181067 A JP 60181067A JP 18106785 A JP18106785 A JP 18106785A JP S6242503 A JPS6242503 A JP S6242503A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- bubble
- bubble element
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔概 要〕
組成がＹ ３−ｘ−ｙ−ｚｓｆｉｘＬｕｙｃａｚＦ ａ
ｓ−ｚＧａｉｏ ＋！で示される磁性ガーネット膜のｘ
、ｙ、ｚの値を０．７１≦ｘ≦０．７７ 、１．６４≦
ｙ≦１．７７ 、０．３１≦ｚ≦０．５０とすることに
より磁気バブルメモリの高記憶密度を可能とする。[Detailed description of the invention] [Summary] Composition is Y3-x-y-zsfixLuycazF a
s-zGaio +! x of the magnetic garnet film shown by
, y, z values 0.71≦x≦0.77, 1.64≦
By setting y≦1.77 and 0.31≦z≦0.50, a high storage density of the magnetic bubble memory is made possible.
本発明は、磁気バブルメモリ素子に用いる磁性ガーネッ
ト単結品薄１模に関するものである。The present invention relates to a magnetic garnet single-cell thin model used in a magnetic bubble memory element.
従来磁気バブルメモリ素子としては１チツプ（約１ｃＩ
１１）当り４Ｍビットまでの記憶容量を持ものが作られ
ているが、更に高記憶密度の素子が要求されている。こ
のためにはバブル径を小さくする必要がある。Conventional magnetic bubble memory elements are 1 chip (approximately 1 cI).
11) Devices with a storage capacity of up to 4 Mbits per device have been manufactured, but devices with even higher storage densities are required. For this purpose, it is necessary to reduce the bubble diameter.
〔従来の技術と発明が解決しようとする問題点〕従来、
磁気バブル結晶としては、（ＹＳｍＬｕＣａ） −ｒ（
ＦｅＧｅ） ｓｏ １２の組成・をもつ磁性ガーネット
単結晶が用いられており、バブル径が１．３μｍとなる
ような組成割合のものが用いられていた。バブル径はＦ
ｅに対するＧｅの置換量によって変る４πＭｓに依存す
るため、バブル径を小さくするにはＦｅＨｋを大きくす
る必要が生ずる。異方性磁界ＨｋはＳ＃ 、Ｌｕの量に
依存する。Ｓｍ、Ｌｕを増やすと格子定数が変化しＧｄ
１ＧａｓＯ＋□基板（以下、ＧＧＧ基板という）との格
子ミスマツチを生ずるといった矛盾を生ずる。[Problems to be solved by conventional technology and invention] Conventionally,
As a magnetic bubble crystal, (YSmLuCa) −r(
A magnetic garnet single crystal having a composition of FeGe) so 12 was used, and the composition ratio was such that the bubble diameter was 1.3 μm. Bubble diameter is F
Since it depends on 4πMs, which changes depending on the amount of Ge substituted for e, it is necessary to increase FeHk in order to reduce the bubble diameter. The anisotropic magnetic field Hk depends on the amounts of S# and Lu. When Sm and Lu are increased, the lattice constant changes and Gd
This causes a contradiction such as a lattice mismatch with the 1GasO+□ substrate (hereinafter referred to as the GGG substrate).
本発明はこのような点に鑑みて創作されたもので、高密
度磁気バブルメモリ素子用の磁性膜を提供することを目
的としている。The present invention was created in view of these points, and an object of the present invention is to provide a magnetic film for a high-density magnetic bubble memory element.
このため本発明においては、基体上に支持されている層
に垂直な一軸異方性を有し、Ｙ３−Ｘ□１Ｓ＋＋ｘＬｕ
ｙＣａｚＦｅ、−ｚＧ＠ｚｏ＋ｚで示される磁性ガーネ
ット膜において、前記ｘ、ｙ、ｚの値がそれぞれ０．７
１≦ｘ≦０．７７ 、１．６４≦ｙ≦１．７７ 、０．
３１≦ｚ≦０．５０の範囲内にあることを特徴としてい
る。Therefore, in the present invention, the layer supported on the substrate has uniaxial anisotropy perpendicular to Y3-X□1S++xLu
In the magnetic garnet film represented by yCazFe, -zG@zo+z, the values of x, y, and z are each 0.7.
1≦x≦0.77, 1.64≦y≦1.77, 0.
It is characterized by being within the range of 31≦z≦0.50.
上記組成とすることによりバブル径が０．５〜０．８μ
ｍとなり高記憶密度（１６Ｍビフト／ｌ−）の磁気バブ
ルメモ１大素子の実現が可能となる。With the above composition, the bubble diameter is 0.5 to 0.8μ
m, making it possible to realize a single-sized magnetic bubble memo element with high storage density (16M bift/l-).
（ＹＳｍＬｕＣａ） ３ （ＦｅＧｅ） ｓｏ ｌｚで
示される単結晶薄膜を形成するにはＹ２Ｏ２、５ＩＩｌ
ｚ０３ ＋ＬｕｚＯｉ 、 ＣａＣＯ３，ＦｅｚＯｚ
。To form a single crystal thin film represented by (YSmLuCa) 3 (FeGe) so lz, Y2O2, 5IIl
z03 +LuzOi, CaCO3, FezOz
.
ＧｅＯ□の原料酸化物を混合し、ＰｂＯ、ＢｚＯｉを混
合した溶媒中に溶解し、この溶液から液相エピタキシャ
ル成長法により育成する。A raw material oxide of GeO□ is mixed, dissolved in a solvent containing a mixture of PbO and BzOi, and grown from this solution by a liquid phase epitaxial growth method.
本実施例においては組成の異なる１９種の試料を作製し
た。In this example, 19 types of samples with different compositions were prepared.
第１表乃至第１０表にその結晶成分酸化物及び溶媒のモ
ル数とグラム数を示す。Tables 1 to 10 show the number of moles and grams of the crystal component oxide and solvent.
以下余白
第１０表
次にこれらの酸化物を電気炉中で約１２００℃の温度で
溶解し、温度を下げて過冷却状態を保ち、こＤ過飽和溶
液中にＧＧＧ基板を浸漬することにより単結晶磁性薄膜
を育成した。育成した結晶の持重を第１１表乃至第１５
表に示す。なお表の最下償の判定は高記憶密度磁性バブ
ルメモリに適するものをＯ印で、不適なものを×印で示
した。Table 10 in the margin below Next, these oxides are melted in an electric furnace at a temperature of about 1200°C, the temperature is lowered to maintain a supercooled state, and the GGG substrate is immersed in the supersaturated solution to form a single crystal. A magnetic thin film was grown. The weight of the grown crystal is shown in Tables 11 to 15.
Shown in the table. Regarding the lowest compensation in the table, those suitable for high storage density magnetic bubble memory are marked O, and those unsuitable are marked X.
判定条件としては、先ず１チツプ（約１ｅａｆ）当り１
６Ｍビットの磁気バブルメモリ素子に用いる結晶として
は、バブル径が０．５〜０．８μｍの範囲にあることが
必要である。次にバブル磁区が結晶内で安定に存在する
ためにはバブルの安定性に関する特性量クラオリティフ
ァクタｑが２．４以上であることが必要である。またＧ
ＧＧ基板と育成したＬＰＥ膜の格子定数の差Δａが４Ｘ
１０−３人より小さければこのミスマツチによる歪が許
容できる。As a judgment condition, first, 1 chip per chip (approximately 1 eaf)
The crystal used in a 6M bit magnetic bubble memory element needs to have a bubble diameter in the range of 0.5 to 0.8 μm. Next, in order for the bubble magnetic domain to stably exist within the crystal, it is necessary that the quality factor q, which is a characteristic quantity related to bubble stability, be 2.4 or more. G again
The difference Δa in lattice constant between the GG substrate and the grown LPE film is 4X
If the number of people is smaller than 10-3, distortion due to this mismatch can be tolerated.
従って判定条件は次の通りとした。Therefore, the judgment conditions were as follows.
Ｓｗ ＝０．５〜０．８ μｍ
ｑ≧２．４
１Δａ Ｉ ＜ ４ Ｘｌ０−”Å
以下余白
第１５表
以上の第１１表〜第１５表の判定結果を図に表わすと第
１図の如くになる。図は横軸にＸを、縦軸にｙをとり、
２は０．３１〜０．５０の範囲とした。従って試料１５
、１８ 、１９は図にプロットされていない。Sw = 0.5 to 0.8 μm q≧2.4 1Δa I < 4 The figure shows X on the horizontal axis and y on the vertical axis.
2 was in the range of 0.31 to 0.50. Therefore, sample 15
, 18 and 19 are not plotted in the figure.
図において丸印は破線でＡで囲んだ部分内に集中してい
る。従ってこの破線で囲った部分、即ちＹ １−ｘ−ｙ
−ｚｓｒａｘＬｕｙｃａｚＦ ａｓ−ｇＧａｇｏ＋ｚに
おいて、〔発明の効果〕
以上述べてきたように、本発明によれば、結晶の組成範
囲を前述の如く決定することにより、バブル径が０．５
〜０．８μｍの高記憶密度の磁気バブルメモリを実現す
ることができ、実用的には極めて有用である。In the figure, the circles are concentrated within the area surrounded by the broken line A. Therefore, the part surrounded by this broken line, that is, Y 1-x-y
-zsraxLuycazF as-gGago+z [Effects of the Invention] As described above, according to the present invention, by determining the composition range of the crystal as described above, the bubble diameter can be reduced to 0.5.
It is possible to realize a magnetic bubble memory with a high storage density of ~0.8 μm, which is extremely useful in practice.
【図面の簡単な説明】
第１図は本発明の実施例の結晶成分と高密度磁気バブル
メモリへの適否の関係を示す図である。
への適否の関係を示す図
第１図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing the relationship between crystal components and suitability for high-density magnetic bubble memory in embodiments of the present invention. Figure 1 shows the relationship between compliance with
Claims (1)
し、Ｙ＿３＿−＿ｘ＿−＿ｙ＿−＿ｚＳｍ＿ｘＬｕ＿ｙ
Ｃａ＿ｚＦｅ＿５＿−＿ｚＧｅ＿ｚＯ＿１＿２で示され
る磁性ガーネット膜において、上記ｘ、ｙ、ｚの値がそ
れぞれ ０．７１≦ｘ≦０．７７ １．６４≦ｙ≦１．７７ ０．３１≦ｚ≦０．５０ の範囲にあることを特徴とする磁気バブル素子用磁性膜
。[Claims] 1. Having uniaxial anisotropy perpendicular to the layer supported on the substrate, Y_3_-_x_-_y_-_zSm_xLu_y
In the magnetic garnet film represented by Ca_zFe_5_-_zGe_zO_1_2, the values of x, y, and z are in the range of 0.71≦x≦0.77, 1.64≦y≦1.77, 0.31≦z≦0.50, respectively. A magnetic film for a magnetic bubble element, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60181067A JPS6242503A (en) | 1985-08-20 | 1985-08-20 | Magnetic film for magnetic bubble element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60181067A JPS6242503A (en) | 1985-08-20 | 1985-08-20 | Magnetic film for magnetic bubble element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6242503A true JPS6242503A (en) | 1987-02-24 |
| JPH0340492B2 JPH0340492B2 (en) | 1991-06-19 |
Family
ID=16094216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60181067A Granted JPS6242503A (en) | 1985-08-20 | 1985-08-20 | Magnetic film for magnetic bubble element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6242503A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06263365A (en) * | 1991-05-24 | 1994-09-20 | Fujitec Co Ltd | Elevator device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5251600A (en) * | 1975-10-23 | 1977-04-25 | Agency Of Ind Science & Technol | Garnet film for magnetic bubbles |
| JPS54161848A (en) * | 1978-06-13 | 1979-12-21 | Agency Of Ind Science & Technol | Garnet film for magnetic bubble element |
-
1985
- 1985-08-20 JP JP60181067A patent/JPS6242503A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5251600A (en) * | 1975-10-23 | 1977-04-25 | Agency Of Ind Science & Technol | Garnet film for magnetic bubbles |
| JPS54161848A (en) * | 1978-06-13 | 1979-12-21 | Agency Of Ind Science & Technol | Garnet film for magnetic bubble element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06263365A (en) * | 1991-05-24 | 1994-09-20 | Fujitec Co Ltd | Elevator device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0340492B2 (en) | 1991-06-19 |
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