JPS6247116A - Semiconductor device manufacturing equipment - Google Patents

Abstract

PURPOSE:To eliminate photo-deterioration effect under actual service conditions by providing means for moving a semiconductor between a reaction chamber and a light annealing chamber without bringing the semiconductor into contact with the atmosphere. CONSTITUTION:After a substrate 10' is mounted on a heater 12' of a preliminary chamber 1, gate valves 3, 7 are opened, gate valves 5, 4 are closed, and preliminary chambers 1, 2 are evacuated in vacuum by a turbo molecule pump 8. Then, the substrate 10' and the hater 12' are moved by a moving mechanism 19 to the chamber 2, the valve 3 is closed, and the chamber is evacuated in vacuum by a cryopump 6. Then, the valve 4 is opened, the substrate 10 and the heater 12 are moved by the mechanism 19' to a reaction chamber 11, and the valve 4 is closed. After a semiconductor film is formed in the chamber 11, the substrate 10 is moved by the mechanism 19; to the light annealing chamber 1 in a reduced pressure state without being brought into contact with the atmosphere. Light is emitted through a window 20 in the chamber 1, a semiconductor film is formed, and an unpaired coupling hand neutralizing additive is added to the substrate 10 without bringing the substrate 10 into contact with the atmosphere.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention comprises a reaction chamber for forming a semiconductor material containing hydrogen or a halogen element, a reaction chamber in which this semiconductor is held under reduced pressure, photo-annealing is performed, and after this step, a Oxygen, fluorine, chlorine,
Semiconductor device manufacturing equipment (hereinafter referred to as equipment) is equipped with a photo-annealing chamber in which additives such as nitrogen or lithium are added, and allows the transfer of substrates on which semiconductors are provided to these spaces without exposing them to the atmosphere. ) regarding.

The present invention relates to reducing or eliminating the Stebler-Lonski effect inherent in non-single crystal semiconductors and obtaining high reliability characteristics using such a manufacturing apparatus.

In a non-single crystal semiconductor having a PIN junction that generates a photovoltaic force upon irradiation with light, the present invention particularly relates to an active semiconductor layer containing an intrinsic or substantially intrinsic (P or N type impurity). For semiconductors to which hydrogen or halogen elements have been added (artificially mixed into agricultural production or mixed at background levels), the semiconductors are transferred to a photo-annealing chamber without exposing them to fire and depressurized. By maintaining this state or performing photoannealing in this atmosphere, the dangling bonds generated by light irradiation are sufficiently generated.Then, the generated dangling bonds are treated with oxygen, fluorine, chlorine, nitrogen, or nitrogen. The purpose of this method is to add additives for neutralizing recombination centers such as , into semiconductors to neutralize the bonds.

For such purpose, the present invention provides plasma CV
A non-single crystal semiconductor (hereinafter simply referred to as a semiconductor) containing hydrogen or a halogen element is heated to a temperature of 500° C. or lower, generally 150° C. or lower, using the D method, photo-CVD method or photo-plasma CVD method.
It is formed under reduced pressure at 300°C.

In particular, the present invention provides that in one layer, which is the active semiconductor layer,
The concentration of oxygen at LJ in the lowest concentration region in the semiconductor (SIM
5 x 101
01I1”3 or less, preferably I Xl0111cm3
A non-single-crystal semiconductor, for example, silicon half-nide, to which hydrogen or a 1':1 element is added is used. And the density of recombination centers in such a semiconductor, especially when exposed to light irradiation, is
It is intended to lower the distance from "cm-' to IXIO"cm-' or less, preferably to approximately 5 x 1016 cm-'.

However, conventionally, when such a highly purified °1 conductor is taken out into the atmosphere immediately after film formation and irradiated with light at atmospheric pressure, the electrical conductivity deteriorates, and the electrical conductivity decreases due to thermal annealing. The so-called Stebla-Lonski effect of recovery is observed.

On the other hand, after forming such a high-purity semiconductor, the inventors
If this semiconductor is held in an ultra-high vacuum atmosphere without being exposed to the atmosphere, and light irradiation and thermal annealing are performed in this vacuum,
The so-called SEI (State Excited by Lig) has a low electrical conductivity for both of these.
ht) Effect discovered.As a result, it was found that the conventionally known Stevler-Lonsugi effect can only be observed when a semiconductor is formed and then exposed to the atmosphere. It has been assumed that the reason for this is that the atmosphere, particularly oxygen, is impregnated into the semiconductor. Regarding this SEL effect and its countermeasure, returning the formed semiconductor to atmospheric pressure in an oxygen-free atmosphere, the patent filed by the present inventor (Japanese Patent Application No. 120881/1982)
(filed on June 30, 2013).

The present invention actively utilizes the SEL effect discovered by the present inventors to prevent photodegradation from occurring under actual use conditions. That is, Sa! l. Due to the effect, the non-single crystal semiconductor has enough dangling bonds (called a recombination center electrically or a recombination center with a level at a deep level in terms of energy band) generated by the light beam 1. It will be generated. Then, a neutralizing additive such as fluorine, oxygen, chlorine, or nitrogen is added to the dangling bonds sufficiently generated by light irradiation to combine with the dangling bonds, neutralizing and stabilizing the -U I end up. In this way, all half-finished weak bonds are cut once to create unpaired bonds, and these unpaired bonds are neutralized with an additive after a sufficient period of time. As a result, in actual use, even if light is irradiated again, this irradiation generates unpaired bonds, which in turn prevents the Stebla-Lonski effect, which is observed due to an increase in recombination centers, from occurring. be.

The present invention will be illustrated below according to the drawings.

Example 1 FIG. 1 shows an outline of a manufacturing apparatus of the present invention used for manufacturing a semiconductor device.

FIG. 1 shows a block diagram of an ultra-high vacuum device (UIIV device) used in the present invention.

The substrate (10') is disposed below a heater (indicated at (12°) in the drawing) in a first preliminary chamber (1) which also serves as a photoannealing chamber. This substrate was prepared with a pair of electrodes for measuring electrical conductivity (Fig. 2 (24)).

<24')). This electrode has
When the electrical property is to be measured, a pair of probes (17) and (17') from outside can be moved and brought into contact after the film is formed (see 2M), and after the semiconductor film is formed, the film is exposed to the atmosphere. It is possible to measure the conductivity and conductivity depending on the presence or absence of light irradiation (20) without touching the conductivity, that is, it is possible to evaluate it in a vacuum under the conditions of IN 5 ITU.

It has a first preliminary chamber (1) for inserting and removing a substrate (10 degrees) and a second preliminary chamber (2) connected to this preliminary chamber by a gate valve (3). In this first preliminary chamber, a substrate holder is also attached to a heater (12'). The second preliminary chamber is connected to the cryopump (
6) and also from the turbomolecular pump (8) by a third gay 1-valve (7). And the board (
After inserting the heater (10°) and the heater (12°) into the first preliminary chamber, open the gate valves (3) and (7), and then open the gate valves (5),
(4) is closed, and the first and second preliminary chambers are evacuated using the turbo molecular pump (8). After further reducing the torr to 10-6 torr or less, the substrate (10°) and heater (12") were moved from the first preliminary chamber (1) to the second preliminary chamber (114) using the moving mechanism (19), and the gate valve ( 3) is closed.

Then, the gate valves (5) are opened, the gate valve (7) is closed, and IIL is emptied to the order of 10-10 torr using a cryopump.

Furthermore, the fourth gate valve (4) is opened, and 2. (The plate (10) and the heater (12) are moved using the moving mechanism (19°).Then, the reaction chamber (11
) is also 10-9 to 1O-10t with cryopump (6)
orr back pressure. Furthermore, the gate valve (4) is closed. The drawing shows a state in which a substrate (10) and a heater (12) are arranged in a reaction chamber (11). A pair of electrodes (14), (1
5) Plasma discharge can be generated in between. This plasma C
In addition to the VD method, Shiyu (light, excimer laser light is used as a window (16)
The semiconductor film may be formed by a photo-CVD method or a photo-plasma CVD method in which high-frequency energy is added to the photo-CVD method.

The reactive gas Kl doping system (21) is added, and the unnecessary materials of the plasma CVD method are added to the other turbomolecular pump (9).
The pressure is controlled by the control valve (22) and exhausted.

The pressure inside the reactor is reduced to 0 by the control valve (22).
．． 001~10torr10torr, 05~0.1t
The control was set to orr. A non-single-crystal semiconductor film, here an amorphous silicon film doped with hydrogen, was formed by applying high-frequency energy from (13) (13,56 Ml1z) sealed OH) plasma CVD method. Thus, a non-single-crystal semiconductor to a thickness of 0.6 μm without addition of P or N type impurities was formed on the substrate at a temperature of 500° C. or lower, for example, 250° C.

Reactive gas and carrier gas contain zero impurities of oxygen and water.
．． [Preferably lower than IPPM], it was introduced from 21) with high purity down to PPB. Furthermore, when attempting to form a silicon film, silane, which is a silicide gas purified by liquefaction to ultra-high purity, was used.

If a photoelectric conversion device is to be formed using a one-chamber method as shown in Figure 1, the number of doping systems should be increased, and diborane, which is an impurity for P-type, should be diluted with silane to 500-50QQPPH and introduced from (21°). Bye. In addition, 5000 PPM of phosphin, an N-type impurity, was removed by silane.
It may be diluted to (21”°) and introduced.

After the semiconductor film was thus formed in the reaction chamber, the supply of reactive gas was stopped, and unnecessary substances in the reaction chamber were removed by the turbo molecular pump (9).

Thereafter, in the manufacturing apparatus of the present invention, the substrate on which the semiconductor has been formed is transferred from the reaction chamber to the photoannealing chamber (1) under reduced pressure without exposing it to the atmosphere. That is, the reaction chamber was evacuated using a turbo molecular pump (9).

Furthermore, the semiconductor (26) on the substrate (10), the heater (12)
) to open the gate valves (4) and (3) and the moving mechanism (
19'), (19) is used to create the first pre-Mtt chamber (
1) Move to Further, the gate valve (4) was closed, the gate valve (5) was opened, and the first preliminary chamber was maintained under reduced pressure by the cryopump (6). The degree of this pressure reduction is at least 1O-3 torr or less, and generally 10-6 to 1O
-9 torr. The semiconductor (26) and substrate (10) held in the optical 7-neal chamber (]), which is also this preliminary chamber, are kept at a temperature below 50°C that does not induce the corrosive neal effect, and after the semiconductor film is formed, they are completely exposed to air. Light irradiation was performed without touching the surface. In addition, an additive for neutralizing unpaired bonds (l
O) Step of executing and locking the addition into the semiconductor. A process was performed to examine changes in electrical conductivity after L-light annealing and thermal annealing. Optical annealing was performed by applying visible light, such as xenon light (100 mW/cm2), through the window (20), and thermal annealing was performed by supplying electricity to the heater (12').

Figure 2 shows that lunar electrodes (chromium is used here) (24), (24') are formed on a synthetic quartz substrate (10)-L-, and the upper surface is covered with intrinsic or substantially intrinsic hydrogen. Alternatively, an amorphous semiconductor (26) which is a non-single-crystal semi-solid to which a halogen element was added was formed. Then, the optical conductivity and the optical conductivity were determined by IN SIT [I] in the +iif chamber as shown in FIG.
(17), (17') were set up on the surface of the surface of the surface of the surface of the surface of the surface of the sample (17) and (17'), and the measurement was carried out by the contact method.

In the present invention, after light irradiation was performed for 7 hours in a vacuum, additives for neutralizing recombination centers of fluorine, chlorine, oxygen, nitrogen, or lithium were added to the semiconductor.

In addition, the introduced additives, such as fluorine, penetrate into the semiconductor surface and the interior through the pores, and combine with the dangling bonds of silicon, which had been created in advance by light irradiation, to form Si-dou bonds. Neutralize and stabilize.

In a previously known device, the third amorphous silicone I 5! , a physical therapy membrane was made, and the electrical conductivity was then determined and evaluated using Wll+.

Therefore,) 1 (light irradiance 1·l when a silicon semiconductor layer is formed to a thickness of 0.611 on a quartz glass plate as one roll)
(Old) (Photoconductivity at 100ml/cmJ (28
), indicating the implied j1 degree (211').

That is, the first jjll-like 1 m (1) light travels n degrees (2 ft 1),
After measuring the degree (28'-1), go to <100m
IQ/cm2) for 2 hours, and the subsequent light conductivity (28-2) and 11. 'H transmission bravery (28゛-2) was measured and d/r rated. Further, this sample was thermally annealed at 150°C for 12 hours, and the photoconductivity (28-3) was changed again in the same manner.
, the conductivity (28'-3) was measured. When this process was repeated, a reversible characteristic was observed as shown in FIG. 3, in which the electrical conductivity decreased due to light irradiation and was recovered by thermal annealing. This repeatability is referred to as the so-called Stebler-ITI effect.

FIG. 4 shows the electrical characteristics for achieving the present invention and shows the SEL effect. A semiconductor film is formed using the UIIV apparatus shown in FIG. Thereafter, this reaction chamber was evacuated, and the semiconductor (26) held under this heater (12") was formed in the first preliminary chamber (photoannealing chamber) (1), which was also used as a photoannealing chamber. Light irradiation (
20) Changes in electrical conductivity (29) and (29') with and without thermal annealing (12') were measured using IN 5ITII.

That is, when measured at a temperature of 25° C. and a vacuum of 4 Xl0-6 torr, the initial conductivity of 1.5 Xl0-'Scm-'(29'-1) and the optical conductivity of 9 x 10'-53 cm-' ( 29-1) (using + SE/7'/7 FO) was obtained. Add to this a xenon lamp (100mW/cm
When 2) is irradiated for 2 hours, the electrical conductivity becomes (29-2)
, (29' -2) and the optical conductivity is 3.5 Xl0-'
Scm-', the dark conductivity decreased to 6 x 10-93 cm-'. This sample was then subjected to heat treatment at 150'C for 3 hours. Then, conventionally, Fig. 3 (28-3),
The electrical conductivity should recover to the initial state value as shown in (2B'-3), but in the method of measuring IN 5ITtl in U)IVF of the present invention, as shown in Fig. 4 (29-3),
3), it further decreases as shown in (29'-3). Irradiate again with a xenon lamp for 2 hours 29-4)
, (29”-4) and (29-5) with thermal annealing at 150'C for 3 hours.

(29°-5) is obtained. Further, (296) and (29'-6) are obtained by xequin lamp annealing. Further, (29-7) and (29''-7) are obtained by thermal annealing.

Even if these heat irradiation and thermal annealing were repeated, the light conversion conductivity (29) and dark conversion conductivity (29°) simply tended to remain, resulting in characteristics completely different from those in FIG. 3.

This is because electrical conductivity decreases when a level is induced by light irradiation.
(State Ex4c, 1ted by 1.igh
L) It is called an effect.

FIG. 5 shows the SFL shown in FIG. 4, which is applied to a semiconductor having the effect, that is, in which recombination centers have been induced by light irradiation, using the same first preliminary chamber to perform IN 5 ITU evaluation and addition for recombination center neutralization. The method of the present invention is shown in which oxygen, which is one of the substances, is added.

That is, although various treatments were performed on the sample shown in Figure 4,
In that state, the optical conductivity (30-1) and the optical conductivity (30°
-1). Here, oxygen was introduced into the first liff chamber to a pressure of 4×]0'Pa (same partial pressure as the popular oxygen).
.

(30'-2). Furthermore, light irradiation (100 m1/c, m22 hours) was performed. However, the optical conductivity (30,
-3), and the conductivity (30'-3) decreased slightly but remained almost constant.

Furthermore, thermal annealing at 150°C was performed for 3 hours. Then they are (30-4) (30°-4) each 1.3
X 10-10-5S'.

1.2 x 10~95cm-' and slightly opposite. J at room temperature under reduced pressure (with some residual oxygen) for another week.
J (placed.Then, the subsequent optical conductivity (30-5) and optical conductivity (30'-5) are each 2.5 Xl0-!'
Scm-', 2. +X]O-'Scm-' is obtained, and the current is also improved. Even if this sample is irradiated with light for 2 hours again, the result is 2.5 X 1010-5S -' (3Q-6)
, 3. OXIXlo-9S-'(30'-6), which is almost unchanged.

In addition, thermal annealing (150°C for 13 hours) and light irradiation (10
The optical conductivity and the optical conductivity at 0 mW/cm (2 hours) are respectively 2.7 X10X10-5S' (30-7),
The conductivity is 2.3 x 10-93 cm-'(30'-7)
It becomes constant.

Therefore, after inducing the S-old effect and irradiating light under reduced pressure in advance to generate sufficient recombination centers due to light, neutralizing additives are added to the unstable recombination centers that have been generated. If it is neutralized and stabilized by adding , then these unstable recombination centers will not be created again, and the effect will be as shown in Figure 3. You can see that it doesn't work.

Just to be sure, I tested this sample again to see if it produced the SEL effect. Zuroto optical conductivity is 2.7 XIXlo-5S
This is because even under vacuum (IO-7Lorr) the value was 2.6
10-'Scm-'(30-8).

2.46X10 by thermal annealing (150℃3n,',)
-'Scm-' (opening plane omitted) was almost constant.

This shows that once an unstable dangling bond (recombination center) is induced by the 5IEI effect and this dangling bond is neutralized by addition of an additive, the SEL effect no longer occurs. .

That is, from the method of the present invention, optically and thermally extremely stable hydrogen or semiconductor (1(i)
) It turns out that you can get the body.

Example 2 This example is a manufacturing apparatus of the present invention employing a multiple reaction chamber system.

Regarding this multi-chamber system, there is a patent application filed by the present inventor, Japanese Patent Application No. 54-104452 (filed on August 16, 1979), and the corresponding USP 4,492, which has already been granted a patent in the United States. .716 (19B5
．． 1.8 issue).

USP 4,505,950 (published 19B5.5.19).

Furthermore, a patent application filed by the inventor (Japanese Patent Application No. 57-16)
3728. (filed September 20, 1982).

A brief summary is given below.

In Figure 6, the doping system (40), the reaction system (41)
).

An exhaust system (42) is provided. The chamber is in the first chamber (l
It has an 11-person Iji room (43). and a first reaction chamber (44) for forming a P- or N-type non-single crystal semiconductor;
A second reaction chamber (45) for forming an I-type semiconductor and a third reaction chamber (44) for forming an N-type or P-type semiconductor are provided.

These (44), (45), and (46) are referred to as a reaction chamber (5o) and correspond to the reaction chamber (11) in FIG. Furthermore, the optical annealing chamber (which performs optical annealing under ultra-high vacuum)
47), after photo-annealing, an additive for neutralizing the recombination center
It is equipped with a diagonal addition chamber (48) for adding materials. These (47) and (48) are referred to as a photoannealing chamber (51), which corresponds to the photoannealing chamber (]) in FIG.

Furthermore, the second preliminary chamber (49) is connected to the S outlet chamber (11h).The seven chambers are connected to each other, and the middle is mechanically or chemically separated. , each chamber has a mechanism that can perform reactions and treatments independently.Mechanically, the number J gate valve (52
-1)...(52-5)...(52-8),
It is open when the substrates (10-, 1)...(10-6) are moved, and is closed during the formation of other semiconductor films and during the induction of the SF1 effect.

A chemically independent system is one in which there is a buffer chamber between these two chambers, in which reactive gases are vented to the atmosphere to prevent the gases from mixing with each other, or This is a method in which the gap between the two chambers is 1 cm or less, so that the reaction between the two chambers is substantially prevented, and the gas is not mixed in with the other chambers.

In either case, the reaction (50) and the photoannealing chamber (51) are connected, and the substrate on which the semiconductor is formed can be moved between these two chambers without being exposed to the atmosphere. The SEL effect is induced by light irradiation during annealing, and an additive is added to eliminate or substantially eliminate the Stebla-Lonski effect.

The substrate (10-1) is sent into the first preliminary chamber (43) through the gate valve (52-1), and the chamber is evacuated. Furthermore, the gate valve (52-2) is closed, and the first reaction is carried out in a vacuum state.
It is moved to the chamber by the moving mechanism and the gate valve (52-2) is closed.

Further, in this first reaction chamber, a pair of electrodes (60), (
60'), the Prada Mag 11-discharge is performed, and a reactive gas is introduced from the doping system (40) to form a first semiconductor (here, a P-type semiconductor on a transparent conductive film on a glass substrate). Formed. Furthermore, the gate valve is opened, the chamber is moved to the second reaction chamber (45), and an I-type semiconductor is formed by a known method. Furthermore, the third reaction chamber (56) was relocated in the same manner.
Forms an N-type ten-force body. After this, this substrate is placed in a photo-annealing chamber (47) kept in vacuum with a gate valve (52-5).
) is closed and moved by a moving mechanism (not shown).

Here, the visible light of 100 m (Q/cm2 or more) is applied from the halogen lamp (57) to the glass h' = +) side (the side where sunlight is 1 (α The irradiation is preferably performed at an intensity of LJ', IW/cm2 or more for 5 hours or more.As shown in FIG. 4 of the first embodiment, dangling bonds are sufficiently generated due to the SEL effect. Thereafter, heat treatment may be performed using a heater (58-5) if necessary.

Furthermore, this board is opened with gate 1 and valves (52, -6),
Transfer to the addition chamber (48) in a vacuum state. Then, while heating this substrate to 50 to 200[deg.] C., an additive selected from fluorine, oxygen, chlorine, and lithium is added at a pressure in the addition chamber of 100 to 760 torr.

After sufficient addition, it is taken out from the second preliminary chamber (49) through the gate 1 and valve (52-8).

Thereafter, a known back electrode was formed, and then the photoelectric conversion reliability characteristics of the photoelectric conversion device were investigated.

Then, AMI (10
Even after 1000 hours under light irradiation conditions of 0 mW/cm''), good quality characteristics were obtained with only 4χ deterioration observed.

The initial conversion efficiency of this photoelectric conversion device is 10.8χ71
．． It was 050m2. On the other hand, in the manufacturing apparatus shown in Fig. 6, the same reliability can be obtained for a sample made in the reaction chamber (50) and taken out without any photoannealing treatment in the photoannealing chamber (5I). I looked into gender. As a result, deterioration characteristics can be seen as shown in FIG. In other words, with only 10 hours of light irradiation time, the reduction was approximately 40χ, and 1
It has deteriorated by 60χ in 000 hours. From this, it is presumed that the importance of integrating the photo-annealing process and the semiconductor film manufacturing process of the present invention and manufacturing a photoelectric conversion device using a multi-chamber method has been made sufficiently clear.

In the manufacturing apparatus of the present invention, the substrate was a glass substrate, and the SEL effect in the optical annealing chamber was performed by irradiating visible light from the substrate side. However, when the substrate is a roll-shaped stainless steel substrate and the upper surface is coated with an insulating film,
It is preferable that the light irradiation is performed from the surface on which the semiconductor film is formed. Furthermore, in such a case, rolls are arranged in the first preparatory chamber and the second preparatory chamber in FIG. Power■It is possible to use words that add something. In this case, there is a gap between each chamber that is large enough to allow chemical separation and a stainless steel plate (thickness of 20 to 30 tt) to pass through, but the reactive gases must not be mixed with each other. This method may be used.

What is important in the present invention is that after forming the semiconductor film, the substrate is transferred to an optical annealing chamber located next to the film without exposing it to the atmosphere.

Then, by performing annealing in a vacuum, preferably under an ultra-high vacuum, the SIi+ effect is induced, and the resulting dangling bonds are neutralized with an additive. The point is that there is.

The present invention described above is different from the conventional method in which, when forming a semiconductor film, the film is formed in an atmosphere containing impurities such as fluorine for neutralizing recombination centers, and these additives are added at the time of film formation. Known methods (e.g. IIs"4226898S
, R. Ovbutinsky) has a different technical philosophy than Aimoto.

The film formed in the present invention mainly consisted of an amorphous silicon semiconductor doped with hydrogen. However, 5ixC+-x (0<X<1) doped with fluorinated amorphous silicon, hydrogen or/and fluorine.

5ixGe+-x (0<X<1), 5ixSr++
-x (0<X<1) It goes without saying that it is also applicable to other non-ji''L crystalline semiconductors or a stack of semiconductors different from this.

In addition, semiconductors include not only ■-type semiconductors, PIN junctions, and Nll+ junction semiconductors, but also NTN junctions, gate P junctions, and P
TNPIN...Hydrogen or Hal with r'IN junction
It goes without saying that a cogen element may be added.

In the present invention, the fluorinated or chlorinated compound is fluorine (F2
), an attempt was made by adding chlorine (CI□). However, when these fluorides and chlorides are irradiated with ultraviolet light, other fluorides (
For example, 11F, Cl3. Cll2Fz+CF4
．． GeF4゜Si2F6 etc.) or chloride (IIcI, C
I+CI3. C1, CI□, CC1□17□, etc.) may be used. Also, oxygen is not only 0□, but also NO2, N20
．． Using NO and other oxides and separating them with light ^
It is also effective to add active oxygen or nitrogen.

[Brief explanation of the drawing]

FIG. 1 shows an outline of a semiconductor device manufacturing apparatus according to the present invention. FIG. 2 shows an 11 sectional view of the system for measuring electrical conductivity. FIG. 3 shows the electrical characteristics of conventionally known intrinsic semiconductors. FIG. 4 shows the intrinsic value q, 1='pj for implementing the present invention.
The electrical properties of the J body are shown. FIG. 5 shows the electrical characteristics of an intrinsic semiconductor made according to the present invention. FIG. 6 shows an outline of the semiconductor manufacturing apparatus of the present invention.

Claims (1)

[Claims] 1. A reaction chamber for forming a non-single-crystal semiconductor containing hydrogen or a halogen element on a substrate, a step of performing photo-annealing while holding the semiconductor under reduced pressure, and after the step, and a photoannealing chamber for adding additives into or on the surface of the semiconductor, and the reaction chamber and the photoannealing chamber are equipped with means for transferring the semiconductor without exposing it to the atmosphere. Semiconductor device manufacturing equipment. 2. The manufacturing of a semiconductor device according to claim 1, wherein the optical annealing chamber includes a chamber for performing optical annealing and an addition chamber for adding an additive for neutralizing recombination centers into the semiconductor. Device. 3. In claim 1, the reaction chambers include a first reaction chamber for forming a P or N type semiconductor, a second reaction chamber for forming an I type semiconductor, and an N or P type semiconductor. and a third reaction chamber for forming a semiconductor film, and these first, second, and third reaction chambers are capable of transferring the substrate without exposing it to the atmosphere and forming a semiconductor film independently. Features of semiconductor device manufacturing equipment.