JPS6249193B2 - - Google Patents

Info

Publication number
JPS6249193B2
JPS6249193B2 JP53157313A JP15731378A JPS6249193B2 JP S6249193 B2 JPS6249193 B2 JP S6249193B2 JP 53157313 A JP53157313 A JP 53157313A JP 15731378 A JP15731378 A JP 15731378A JP S6249193 B2 JPS6249193 B2 JP S6249193B2
Authority
JP
Japan
Prior art keywords
film
wear
heating resistor
thermal
resistant protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53157313A
Other languages
Japanese (ja)
Other versions
JPS5582679A (en
Inventor
Keizaburo Kuramasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15731378A priority Critical patent/JPS5582679A/en
Publication of JPS5582679A publication Critical patent/JPS5582679A/en
Publication of JPS6249193B2 publication Critical patent/JPS6249193B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335Structure of thermal heads

Landscapes

  • Electronic Switches (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

サーマルヘツドは、給電用の配線用導体を通し
て発熱抵抗体を選択的に発熱させ、これによるジ
ユール熱を感熱紙へ与えることにより感熱紙の所
定部分を発色させ印字、または印画を行うための
ヘツドである。 このような記録方式は感熱記録方式といわれ、
装置が小型化、低価格化できること、保守整備の
労力が不要であること、さらに騒音や臭いがしな
いなどの特長を有しており、各種のプリンターや
フアクシミリへの応用を目的として高信頼性、低
価格のサーマルヘツドの開発が積極的に行われて
いる。 このようなサーマルヘツドには、その製作方法
から半導体型、厚膜型、薄膜型の3方式がある
が、解像度や印字品質の点で薄膜型が優れてお
り、サーマルヘツドの主流をなすものと考えられ
ている。 しかしながら、薄膜型サーマルヘツドは厚膜型
ヘツドに比べて製作工程が比較的複雑であり、量
産性の点で問題がある。 この複雑な要因の1つとして発熱抵抗体の加熱
による酸化防止の問題があり、本発明では新しい
材料を用いることにより簡単な工程で酸化防止効
果を有する耐摩耗保護膜を作成可能とし、量産性
向上をはかることを目的としたものである。 ところで、サーマルヘツドは、感熱紙と摺動し
ながら高温加熱と冷却を繰りかえして使用される
ものであることからヘツドの信頼性については発
熱抵抗体の劣化と耐摩耗保護膜の摩耗が最も重要
な要因である。 薄膜型サーマルヘツドの発熱抵抗体層の厚さ
は、通常数百オングストロームであるために高温
加熱による酸化を防止することは劣化を防ぐため
に重要である。一般に発熱抵抗体として用いられ
ているニクロム(Ni−Cr)、または窒化タンタル
(Ta2N)発熱抵抗体においても、高温加熱での耐
酸化性は悪く劣化が生じてしまう。このため、上
記の発熱抵抗体を用いたサーマルヘツドでは、従
来第1図に示すように耐酸化防止膜を形成した構
造となつている。第1図において、1は耐摩耗保
護膜、例えば酸化タンタル(Ta2O5)または炭化
ケイ素(SiC)、2は酸化防止膜、例えばSiO2
膜、3,4は配線用導体であり、配線用導体4は
発熱抵抗体との密着性を改善するための層であ
る。5は発熱抵抗体層で、ニクロム(NiCr)ま
たは窒化タンタルである。6はガラスグレーズ
層、7はアルミナ基板である。 このように耐摩耗保護層を二層構造としてある
のは、次のような理由によるものである。 すなわち、感熱紙と直接摺動する部分は、摩耗
が生じるために硬度の高い摩耗に強い材料が必要
とされる。このような材料として、酸化物、炭化
物あるいは窒化物があるが、一般に発熱抵抗体の
酸化防止効果は不充分である。例えば、よく用い
られているTa2O5、Al2O3およびSiC膜を発熱抵抗
体上に直接形成して使用したところ、酸化による
発熱抵抗体の劣化が生じる。ところで、このよう
な酸化防止効果を有する材料として、SiO2があ
ることが見出されているが、SiO2膜の耐摩耗性
は悪いことも実験より見出されている。 以上のような理由から耐摩耗保護層部を二層構
造としてあるのである。しかしながら、このよう
な構造のヘツドにおいては、次のような問題点が
ある。 (1) 耐摩耗膜形成工程が複雑となる。充分な酸化
防止効果を得るためのSiO2膜の厚さは2μで
あり、この膜は耐摩耗保護膜としての効果はほ
とんどないにもかかわらず必要であるため、工
程が複雑となるだけでなく、処理時間も長くな
るという問題点がある。 (2) 熱効率が低下する。発熱抵抗体で発生した熱
を感熱紙へ効率良く伝えるためには耐摩耗保護
膜の熱伝導性は良好な程良い。しかるに、
SiO2膜の熱伝導性は悪いために熱効率を高め
ることができない。 (3) 発熱温度分布が不均一である。発熱抵抗体部
分の通電加熱による温度上昇は、第2図の特性
aに示すように中心部が高く周辺部にいく程低
くなる。なお、発熱温度分布は、第2図の特性
bに示すように中心部が平坦になる程良いが、
酸化防止SiO2膜の熱伝導性不良のために中心
部の熱が周辺部へ移動しなく、従来は第2図の
特性aのようにしかならず、印字品質が不充分
な点があつた。 以上のような従来の問題点を解消する方法とし
て耐酸化性の特に良好な発熱抵抗体を形成するこ
とが行われている。このような発熱抵抗体とし
て、Si−Ta合金膜がある。周知のようにSiは耐
酸化性の非常に良好な材料である。そこで、Si−
Ta合金抵抗体は、抵抗体層上にさらに高濃度の
Siを含むSi−Ta合金層を酸化防止膜として用い
た構造をしている。この発熱抵抗体を用いること
により従来例の問題点は解消するが、抵抗体形成
技術が複雑となることや配線用導体とSiが反応し
やすいことなどの問題点を有しており、満足すべ
きものではない。 すなわち耐摩耗保護層として耐酸化性および耐
摩耗性ともに優れた材料を得ることができれば、
上述の問題点が解消され、抵抗体形成技術および
耐摩耗保護層形成工程が簡単となり、サーマルヘ
ツドの量産性の向上に大きく寄与させることがで
きる。 本発明者はSiが耐酸化性に優れ、かつ熱伝導性
も良く比較的硬度の大きな材料であることに注目
し、耐摩耗性に優れた酸化物あるいは炭化物、窒
化物等にSiを混合させた膜について耐摩耗性およ
び耐酸化性を調べた。この結果、Siを混合させた
膜は、耐摩耗性を損うことなく、耐酸化性の優れ
た膜が得られることを見出した。Siを混合させる
量は、耐摩耗材料によつて異なるが、表1に示す
ようにいずれの場合にも耐酸化性および耐摩耗性
の両者を満足する結果が得られた。
A thermal head is a head that selectively generates heat through a heating resistor through a wiring conductor for power supply, and applies the generated heat to the thermal paper to color a predetermined area of the thermal paper and print or print. be. This type of recording method is called a thermal recording method.
It has features such as the ability to make the device smaller and cheaper, requires no maintenance effort, and does not emit noise or odor. The development of low-cost thermal heads is actively underway. There are three types of thermal heads: semiconductor type, thick film type, and thin film type, depending on how they are manufactured, but the thin film type is superior in terms of resolution and printing quality, and is considered the mainstream thermal head. It is considered. However, the manufacturing process for thin film thermal heads is relatively more complicated than that for thick film heads, and there are problems in terms of mass production. One of the complicating factors is the problem of preventing oxidation due to heating of the heating resistor.The present invention uses a new material to make it possible to create a wear-resistant protective film with an oxidation-preventing effect in a simple process, making it possible to mass-produce it. The purpose is to improve the results. By the way, thermal heads are used by repeatedly heating and cooling at high temperatures while sliding against thermal paper, so deterioration of the heating resistor and wear of the abrasion-resistant protective film are the most important factors for the reliability of the head. It is a factor. The thickness of the heating resistor layer of a thin film type thermal head is usually several hundred angstroms, so preventing oxidation due to high temperature heating is important to prevent deterioration. Nichrome (Ni-Cr) or tantalum nitride (Ta 2 N) heating resistors, which are generally used as heating resistors, also have poor oxidation resistance and deterioration when heated at high temperatures. For this reason, a thermal head using the above-mentioned heat generating resistor conventionally has a structure in which an oxidation-resistant film is formed as shown in FIG. In FIG. 1, 1 is a wear-resistant protective film, such as tantalum oxide (Ta 2 O 5 ) or silicon carbide (SiC), and 2 is an anti-oxidation film, such as SiO 2
The films 3 and 4 are wiring conductors, and the wiring conductor 4 is a layer for improving adhesion to the heating resistor. 5 is a heating resistor layer made of nichrome (NiCr) or tantalum nitride. 6 is a glass glaze layer, and 7 is an alumina substrate. The reason why the wear-resistant protective layer has such a two-layer structure is as follows. That is, the parts that directly slide against the thermal paper are subject to wear, and therefore require a material that is highly hard and resistant to wear. Such materials include oxides, carbides, and nitrides, but generally the oxidation prevention effect of heating resistors is insufficient. For example, when commonly used Ta 2 O 5 , Al 2 O 3 and SiC films are directly formed and used on a heat generating resistor, the heat generating resistor deteriorates due to oxidation. By the way, it has been discovered that SiO 2 is a material that has such an antioxidant effect, but experiments have also found that the wear resistance of the SiO 2 film is poor. For the above reasons, the wear-resistant protective layer portion has a two-layer structure. However, the head having such a structure has the following problems. (1) The wear-resistant film formation process becomes complicated. The thickness of the SiO 2 film to obtain a sufficient oxidation prevention effect is 2μ, and since this film is necessary even though it has little effect as an anti-wear protective film, it not only complicates the process but also However, there is a problem that the processing time becomes long. (2) Thermal efficiency decreases. In order to efficiently transfer the heat generated by the heating resistor to the thermal paper, the better the thermal conductivity of the wear-resistant protective film is, the better. However,
Thermal efficiency cannot be increased because the thermal conductivity of the SiO 2 film is poor. (3) The heat generation temperature distribution is uneven. The temperature rise due to electrical heating of the heating resistor portion is high at the center and becomes lower toward the periphery, as shown by characteristic a in FIG. The heat generation temperature distribution is better if the center is flat, as shown in characteristic b in Figure 2.
Due to the poor thermal conductivity of the oxidation-preventing SiO 2 film, heat from the center does not move to the periphery, and in the past, only characteristic a in FIG. 2 was observed, resulting in insufficient print quality. As a method of solving the above-mentioned conventional problems, it has been attempted to form a heating resistor having particularly good oxidation resistance. As such a heating resistor, there is a Si--Ta alloy film. As is well known, Si is a material with very good oxidation resistance. Therefore, Si−
The Ta alloy resistor has a higher concentration on the resistor layer.
The structure uses a Si-Ta alloy layer containing Si as an oxidation prevention film. Although the problems of the conventional method are solved by using this heating resistor, there are other problems such as the resistor formation technology is complicated and the wiring conductor tends to react with Si, so it is not satisfactory. It's not a kimono. In other words, if a material with excellent oxidation resistance and abrasion resistance can be obtained as a wear-resistant protective layer,
The above-mentioned problems are solved, the resistor forming technique and the wear-resistant protective layer forming process are simplified, and this can greatly contribute to improving the mass productivity of thermal heads. The present inventor focused on the fact that Si is a material with excellent oxidation resistance, good thermal conductivity, and relatively high hardness, and mixed Si with oxides, carbides, nitrides, etc. that have excellent wear resistance. The abrasion resistance and oxidation resistance of the film were investigated. As a result, it was found that a film containing Si can be obtained with excellent oxidation resistance without impairing wear resistance. The amount of Si mixed varies depending on the wear-resistant material, but as shown in Table 1, results satisfying both oxidation resistance and wear resistance were obtained in all cases.

【表】 なお、混合物を使う場合には表1のケイ素混合
量とは若干異なることが認められたが、耐酸化性
と耐摩耗性を満足することができるケイ素混合量
が存在することがわかつた。 以下に、本発明の一実施例として耐摩耗材料と
してSiCを用いた場合を説明する。 混合膜を得る方法としては、高周波スパツタリ
ングが最も簡単であり、SiCターゲツト上に適当
な面積比となるようにSiをおき、高周波スパツタ
リングすることにより任意の組成の混合膜が得ら
れる。なお、この膜は蒸着によつても得られる。 膜の硬度は混合するSiの量の増加に伴い減少す
るが、10%程度の添加量でもヌープ硬度で約2200
Kg/mm2あり、Ta2O5膜の硬度650Kg/mm2より硬く
充分な耐摩耗性を示した。また、耐酸化性につい
ても10%程度の添加量の膜で保護可能であること
が判明した。なお、混合膜作成法としてSiCター
ゲツトにSiを高温で含浸させたものでも同様の膜
を得ることができる。 第3図に本発明による薄膜型サーマルヘツドの
断面図を示しており、発熱抵抗体5、配線用導体
3,4の形成までは従来と同一であるが、耐摩耗
保護膜工程においては、上述の方法により混合膜
を形成するだけで良く処理が簡単となつている。
なお、第3図において、8は本発明におけるSiを
混合した耐摩耗保護膜である。なお、本実施例の
方法はSiCに特有の方法ではなく、他の酸化物や
窒化物あるいは炭化物でも行えることは説明する
までもなく、かつ表1に示すようにケイ素の混合
で耐摩耗特性の改善が可能である。 以上のように本発明によるSiを混合させた耐摩
耗保護膜を用いることにより、耐酸化性、耐摩耗
性ともに優れた保護膜の形成が簡単な方法で可能
となり、薄膜型サーマルヘツドの製造方法が簡単
でかつ信頼性の高いヘツドを作ることができる。
また、保護膜は熱伝導性の良いことから温度分布
が良くなり、印字品質も向上するとともに熱効率
の優れたヘツドが可能となり、さらに混合膜中の
Siは配線用導体の密着性を改善することから密着
性についても改善される等、本発明は薄膜型サー
マルヘツドにとつて極めて有効な効果を得ること
ができるのである。
[Table] When using a mixture, it was observed that the amount of silicon mixed was slightly different from the amount shown in Table 1, but it was found that there is a amount of silicon mixed that can satisfy oxidation resistance and wear resistance. Ta. Below, as an example of the present invention, a case where SiC is used as the wear-resistant material will be described. High frequency sputtering is the simplest method for obtaining a mixed film, and a mixed film of any composition can be obtained by placing Si on a SiC target at an appropriate area ratio and performing high frequency sputtering. Note that this film can also be obtained by vapor deposition. The hardness of the film decreases as the amount of Si mixed increases, but even with an addition amount of about 10%, the Knoop hardness is about 2200.
Kg/mm 2 , which is harder than Ta 2 O 5 film, which has a hardness of 650 Kg/mm 2 , and showed sufficient wear resistance. It was also found that oxidation resistance can be protected with a film with an additive amount of about 10%. Note that a similar film can also be obtained by impregnating a SiC target with Si at high temperature as a method for producing a mixed film. FIG. 3 shows a sectional view of a thin film type thermal head according to the present invention, and the steps up to the formation of the heating resistor 5 and the wiring conductors 3 and 4 are the same as the conventional one, but the wear-resistant protective film process is different from that described above. The process is simple as it is only necessary to form a mixed film using the method described above.
In addition, in FIG. 3, 8 is a wear-resistant protective film mixed with Si in the present invention. It goes without saying that the method of this example is not specific to SiC, but can also be performed with other oxides, nitrides, or carbides. Improvements are possible. As described above, by using the wear-resistant protective film mixed with Si according to the present invention, it is possible to form a protective film with excellent oxidation resistance and wear resistance in a simple manner, and the method for manufacturing a thin-film thermal head It is possible to make a simple and reliable head.
In addition, the protective film has good thermal conductivity, which improves temperature distribution, improves printing quality, and enables a head with excellent thermal efficiency.
Since Si improves the adhesion of the wiring conductor, the adhesion is also improved, and the present invention can provide extremely effective effects for thin film type thermal heads.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の薄膜型サーマルヘツドの断面
図、第2図は従来のヘツド(特性a)と本発明の
ヘツド(特性b)のそれぞれにおける発熱部の温
度分布を示す図、第3図は本発明の一実施例によ
る薄膜型サーマルヘツドの構造を示す断面図であ
る。 3,4……配線用導体、5……発熱抵抗体、6
……ガラスグレーズ層、7……アルミナ基板、8
……耐摩耗保護膜。
Figure 1 is a cross-sectional view of a conventional thin film type thermal head, Figure 2 is a diagram showing the temperature distribution of the heat generating part in the conventional head (characteristic a) and the head of the present invention (characteristic b), respectively. 1 is a sectional view showing the structure of a thin film type thermal head according to an embodiment of the present invention. 3, 4...Wiring conductor, 5...Heating resistor, 6
...Glass glaze layer, 7...Alumina substrate, 8
...Wear-resistant protective film.

Claims (1)

【特許請求の範囲】[Claims] 1 絶縁性基板上に形成した発熱抵抗体とこの発
熱抵抗体への給電用の配線用導体と前記発熱抵抗
体および配線用導体を保護する耐摩耗保護膜とか
らなる薄膜型サーマルヘツドにおいて、前記耐摩
耗保護膜として酸化物、炭化物または窒化物にケ
イ素を混合させた膜を用いることを特徴とする薄
膜型サーマルヘツド。
1. A thin film type thermal head comprising a heating resistor formed on an insulating substrate, a wiring conductor for supplying power to the heating resistor, and an abrasion-resistant protective film for protecting the heating resistor and wiring conductor. A thin film thermal head characterized in that a film made of a mixture of oxide, carbide, or nitride with silicon is used as a wear-resistant protective film.
JP15731378A 1978-12-19 1978-12-19 Thin film type thermal head Granted JPS5582679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15731378A JPS5582679A (en) 1978-12-19 1978-12-19 Thin film type thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15731378A JPS5582679A (en) 1978-12-19 1978-12-19 Thin film type thermal head

Publications (2)

Publication Number Publication Date
JPS5582679A JPS5582679A (en) 1980-06-21
JPS6249193B2 true JPS6249193B2 (en) 1987-10-17

Family

ID=15646942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15731378A Granted JPS5582679A (en) 1978-12-19 1978-12-19 Thin film type thermal head

Country Status (1)

Country Link
JP (1) JPS5582679A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102374A (en) * 1980-12-18 1982-06-25 Ricoh Co Ltd Thermal head
JPS59174369A (en) * 1983-03-23 1984-10-02 Pentel Kk Thermal head
JPS604077A (en) * 1983-06-23 1985-01-10 Fujitsu Ltd Thermal head

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52108826A (en) * 1976-03-10 1977-09-12 Matsushita Electric Ind Co Ltd Thermal head
JPS5397443A (en) * 1977-02-04 1978-08-25 Tdk Corp Printing head of thermosensitive system

Also Published As

Publication number Publication date
JPS5582679A (en) 1980-06-21

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