JPS6249623A - X-ray exposure mask - Google Patents
X-ray exposure maskInfo
- Publication number
- JPS6249623A JPS6249623A JP60160689A JP16068985A JPS6249623A JP S6249623 A JPS6249623 A JP S6249623A JP 60160689 A JP60160689 A JP 60160689A JP 16068985 A JP16068985 A JP 16068985A JP S6249623 A JPS6249623 A JP S6249623A
- Authority
- JP
- Japan
- Prior art keywords
- film
- exposure mask
- ray
- ray exposure
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 4
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 35
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 229910004205 SiNX Inorganic materials 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 241000981595 Zoysia japonica Species 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101100289061 Drosophila melanogaster lili gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ウェハに対して極めて小さい間隔まで近接し
得るＸａ露光マスクに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an Xa exposure mask that can be brought close to a wafer at an extremely small distance.
（従来の技術）
従来、Ｘ線露光マスクは軽元素から成る薄膜の一生平面
上に所望のパターＸ以後Ｘ線吸収体パターンと称する）
を重金属で形成せしめ、該薄膜の周囲を平板状の支持枠
に固定支持する構造のものが用いられている。(Prior art) Conventionally, an X-ray exposure mask has a thin film made of a light element on which a desired pattern (hereinafter referred to as an X-ray absorber pattern) is formed on a flat surface.
A structure is used in which the thin film is formed of heavy metal and the periphery of the thin film is fixedly supported by a flat support frame.
（ポ発明が解決しようとする問題点）
Ｘ線露光プロセスでは１点光源を扇いたＸ組露光に特有
の転写像の半影ボケや幾何学的位置ずれ（アイ・イー・
イー・イー―トランズアクションズ・オン・エレクトロ
ン１デバイセズ、 （ＩＥＥＥＴｒａｎｓａｃｔｉｏｎ
ｓ ｏｎ Ｅｌｅｅｔｒｏｎ Ｄｅｖｉｃｅｓ、Ｖ
ｏｌ。(Problems to be solved by the invention) In the X-ray exposure process, penumbra blur and geometric positional deviation of the transferred image (I.E.
IEEETransactions on Electron 1 Devices, Inc.
s on Eleetron Devices, V
ol.
ＥＤ−２２、／Ｖｈ７ 、Ｐ ４２１ 、１９７５ ）
）が生ずる為、その影響を最小限に抑える為に、Ｘ１
ｌｉｌｉ！露光マスクと露光対象のウェハとの間隔をで
きる限り狭めて露光する必要がある。この為、一般にＸ
ｕＩ露光マスクのパターン支持膜とウェハの間隔を二重
焦点顕微鏡で約１０μｍないし４０μｍ程度に調節し、
露光する方法がとられている（特開昭５９−１２８４０
４号公報）。ED-22, /Vh7, P 421, 1975)
) occurs, so in order to minimize the effect,
Lili! It is necessary to perform exposure while keeping the distance between the exposure mask and the wafer to be exposed as narrow as possible. For this reason, generally
Adjust the distance between the pattern support film of the uI exposure mask and the wafer to about 10 μm to 40 μm using a bifocal microscope,
The method of exposing
Publication No. 4).
ところが、従来のＸ線露光マスクでは、前記の間隔程度
にウェハに対して近接させると支持枠部がしばしばウェ
ハと接触し、高精度のマスク位置合せを妨げる原因とな
っていた。これは基板に結晶欠陥があると吸収体パター
ンを形°成するための金メッキ工程で欠陥部分に異常な
メッキが生じそこが凸部となることや、Ｘ線マスクを把
持するときは支持枠をつかむのでそこにホコリ等が付着
しやすいこと等の理由である。However, in conventional X-ray exposure masks, when placed close to the wafer at the above-mentioned distance, the support frame often comes into contact with the wafer, which hinders highly accurate mask alignment. This is because if there is a crystal defect in the substrate, abnormal plating will occur on the defective part during the gold plating process to form the absorber pattern, resulting in a convex part, and when holding the X-ray mask, the supporting frame must be used. The reason for this is that since it is gripped, dust etc. tend to adhere to it.
本発明の目的は、上記の問題点を解決し、高精度のパタ
ーン転写を可能にしたＸ線露光マスクを提供することに
ある。An object of the present invention is to provide an X-ray exposure mask that solves the above problems and enables highly accurate pattern transfer.
（問題点を解決するための手段）
本発明は、パターンの被転写基板であるウェハとＸｉ露
光マスクの間隔設定を妨げる原因である補強支持枠部を
、パターン支持膜面より後退させたことを特徴とする。(Means for Solving the Problems) The present invention is characterized in that the reinforcing support frame portion, which is the cause of hindering the setting of the distance between the wafer, which is the substrate to which the pattern is transferred, and the Xi exposure mask, is set back from the surface of the pattern support film. Features.
（作用）
本発明のＸ線露光マスクに於いては、Ｘ庫吸収体パター
ンを形成した主平面をウェハに対して近接耐直した場合
、 ？ｌＩｉ強支持枠支持枠部ハの間隔は十分広く保た
れる為、互いに接触して所望の間隔制御及び位置合せを
妨げることがない。(Function) In the X-ray exposure mask of the present invention, when the main plane on which the X-ray absorber pattern is formed is brought close to the wafer, ? Since the spacing between the strong support frame support frame portions C is kept sufficiently wide, they do not come into contact with each other and interfere with desired spacing control and alignment.
（実施例）
以下、実施例により本発明のＸ線露光マスクを説明する
。(Example) Hereinafter, the X-ray exposure mask of the present invention will be explained with reference to Examples.
第１図（ａ）〜（ｇ）は本発明のＸ線露光マスクの製造
工程に於ける模式断面図を示す。FIGS. 1(a) to 1(g) show schematic cross-sectional views in the manufacturing process of the X-ray exposure mask of the present invention.
先ず数百μｍないし１ｆｌ程度の厚さの（１００）面方
位のＳｔ単結晶基板１の表面を熱酸化法により酸化し、
約０．１μｍないし０．３μｍの膜厚の５ｔＯ１膜２を
形成したのち、いずれか一方の表面のＳｌＯ□膜をエツ
チングして除去する（（ａ）図）。First, the surface of a (100)-oriented St single crystal substrate 1 with a thickness of several hundred μm to 1 fl is oxidized by a thermal oxidation method.
After forming the 5tO1 film 2 with a thickness of about 0.1 μm to 0.3 μm, the SlO□ film on one of the surfaces is etched and removed (FIG. (a)).
次にＣＶＤ法により、前記Ｓｉ０ｇ膜２の表面上にＳ
ｉ 、Ｎ４膜３を厚さ０．１ μｍないし０．２ μｍ
堆積し、続いてプラズマＣＶＤ法により、ＳｔＸ板１の
他方の表面上に数百ｎｍないし数踊厚のＳｉＮｘ膜４を
堆積する（（ｂ）図）。この時、前記シリコン窒化膜４
の内部応力が約１×１０＠打ｎ／ｄないし１×１０”
ｄｙｎ ／ｃｒｌｌになるように、プラズマＣＶＤ条件
を設定する。Next, by the CVD method, S is deposited on the surface of the Si0g film 2.
i, N4 film 3 with a thickness of 0.1 μm to 0.2 μm
Subsequently, a SiNx film 4 with a thickness of several hundred nm to a few dimensions is deposited on the other surface of the StX plate 1 by plasma CVD (see FIG. 3(b)). At this time, the silicon nitride film 4
The internal stress of approximately 1×10@d/d to 1×10”
Plasma CVD conditions are set so that dyn/crll.
通常の光学露光技術を用いて前記Ｓｉ、Ｎ、膜３及びＳ
ｉＮｘ膜４の表面上にレジストパターン５を形成する（
（Ｃ）図）。この工程は１両面マスクアライナ−を用い
れば便利である。The Si, N, film 3 and S
A resist pattern 5 is formed on the surface of the iNx film 4 (
(C) Figure). This process is convenient if a single-sided mask aligner is used.
前記レジストパターン５を保護膜にして反応性イオンエ
ツチング等の方法により、Ｓｉ、Ｎ、膜３゜ＳｔＯ，膜
２及び５ＩＮＫ膜４の所定の領域をエツチングして除去
する（（ｄ）図）。Using the resist pattern 5 as a protective film, predetermined regions of the Si, N, 3°StO, 2, and 5INK films 4 are etched and removed by a method such as reactive ion etching (see figure (d)).
次に前記Ｓｉ基板１を加熱した水酸化カリウム水溶液又
は抱水ヒドラジン等の異方性エツチング液に浸して、Ｓ
ｉ基板１の開口領域を約２０μｍ〜１００μｍ程度エツ
チングする（（ｅ）図）。基板のエツチング量は露光の
時のＸ線吸収体パターン面とウェハの間隔つまり、設定
ギャップ量によって設定するが、１５μｍギャップのと
きは少なくとも２０μｍエツチングすれば十分である。Next, the Si substrate 1 is immersed in an anisotropic etching solution such as a heated potassium hydroxide aqueous solution or hydrazine hydrate, and
The opening area of the i-substrate 1 is etched by approximately 20 μm to 100 μm (Figure (e)). The amount of etching of the substrate is determined by the distance between the X-ray absorber pattern surface and the wafer during exposure, that is, the set gap amount, and when the gap is 15 μm, etching of at least 20 μm is sufficient.
ＳｉＮｘ膜４の表面上に所望のパターン７をＡｕ又はＷ
等の重金属を用いて形成しく（ｆ）図）、この重金属パ
ターンを任意の治具を用いて保護しつつ前述の異方性エ
ツチング液により、Ｓｉ基板１を前記５ｉｓＮ４＠３の
開口部よりエツチングすれば、（ｇＥに示すようなＸ線
露光マスクが得られる。A desired pattern 7 is formed on the surface of the SiNx film 4 using Au or W.
While protecting this heavy metal pattern using an arbitrary jig, the Si substrate 1 is etched from the opening of the 5isN4@3 using the above-mentioned anisotropic etching solution. Then, an X-ray exposure mask as shown in (gE) is obtained.
上記実施例ではパターン支持膜として５ｉＮｚ 膜を用
いたが、ＢＮ膜、ＳｉＣ膜、ダイヤモンド状カーボン膜
等を用いても同様の効果が得られる。In the above embodiment, a 5iNz film was used as the pattern support film, but similar effects can be obtained by using a BN film, a SiC film, a diamond-like carbon film, or the like.
（発明の効果）
本発明のＸ線露光マスクに於いては、転写パターンを支
持する５ｉＮ）ｃ膜は、その内部応力によって緊張して
形成される。またこのＳｉＮｘ膜を支持するＳｔフレー
ム１′は、エツチングの保護膜として用いた８５Ｎ４膜
３とＳｉ０ｇ膜２め膜厚比を適゛当な値に選ぶことによ
って各々の膜によりＳｔフレーム１′に加わる付加応力
が相殺される為、平面度の良いＸ線露光マスクが得られ
る。更に前記のギャップを約１０μｍ程度まで狭めた場
合にも、Ｓ１フレーム１′の主平面とウェハの間隔は約
６０μｍない、シ１１０μｍと十分広く保たれる為、従
来のようにウェハと接触して位置合せ精度を劣化させる
ことが無い。(Effects of the Invention) In the X-ray exposure mask of the present invention, the 5iN)c film supporting the transferred pattern is formed under tension due to its internal stress. Furthermore, the St frame 1' supporting this SiNx film can be formed by selecting an appropriate film thickness ratio between the 85N4 film 3 and the Si0g film 2 used as protective films for etching. Since the added stress is canceled out, an X-ray exposure mask with good flatness can be obtained. Furthermore, even when the above-mentioned gap is narrowed to about 10 μm, the distance between the main plane of the S1 frame 1' and the wafer is not about 60 μm, but is kept sufficiently wide at 110 μm. There is no deterioration in alignment accuracy.
第１図（ａ）〜（ｇ）は本発明のＸＩ！露光マスクの製
造工程に従って示した模式断面図で１図中１はＳｉ単結
晶基板％２はＳｉＯ３膜、３はｓｉ、Ｎ、膜、４はＳｉ
Ｎｘ膜、５はレジストパターン、７はＸ線吸収体パタ−
ン、１′はＳｔ単結晶基板１の一部をエツチング除去し
て形成したＳｉフレームである。
オ １ 図
（ｂ） ５１ｓＮ４膜 （ｆ）手続補正書
（自発）
６１．９．１９
昭和 年 月 日
２、発明の名称
Ｘ線露光マスク
３、補正をする者
事件との関係 出願人
東京都港区芝五丁目３３番１号
（４２３） 日本電気株式会社
代表者 関本忠弘
４、代理人
〒１０８東京都港区芝五丁目３７番８号住友三田ビル５
、補正の対象
明細書の発明の詳細な説明の欄
６、補正の内容
（１）、明細書の第２頁第１９行目から第２０行目にか
けて「基板に結晶欠陥があると］とあるのを「基板に欠
陥があると」と補正する。
（２）、明細書第３頁第４行目に「等の理由である」と
あるのを「等の理由による」と補正する。FIGS. 1(a) to (g) show XI! of the present invention! This is a schematic cross-sectional view shown according to the manufacturing process of an exposure mask.
Nx film, 5 is a resist pattern, 7 is an X-ray absorber pattern
1' is a Si frame formed by etching away a part of the St single crystal substrate 1. E 1 Figure (b) 51sN4 membrane (f) Procedural amendment (voluntary) 61.9.19 Showa year, month, day 2, title of invention 5-33-1 Shiba, Tokyo (423) NEC Corporation Representative: Tadahiro Sekimoto 4, Agent: 5 Sumitomo Mita Building, 37-8 Shiba 5-chome, Minato-ku, Tokyo 108
, Column 6 of the detailed description of the invention in the specification subject to amendment, content of amendment (1), page 2, line 19 to line 20 of the specification, which states ``If there is a crystal defect in the substrate.'' ``There is a defect in the board.'' (2) In the fourth line of page 3 of the specification, the phrase "for the following reasons" is amended to read "for the following reasons."
Claims (1)
、このＸ線透過性薄膜の周囲を固定支持する補強支持梁
とから成るＸ線露光マスクに於いて、前記補強支持梁の
主平面を前記Ｘ線透過性薄膜の主平面よりも後退させた
ことを特徴とするＸ線露光マスク。In an X-ray exposure mask comprising an X-ray absorber pattern, an X-ray transparent thin film supporting the same, and a reinforcing support beam fixedly supporting the periphery of the X-ray transparent thin film, the main plane of the reinforcing support beam An X-ray exposure mask characterized in that: is set back from the main plane of the X-ray transparent thin film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60160689A JPS6249623A (en) | 1985-07-19 | 1985-07-19 | X-ray exposure mask |
| DE19863624566 DE3624566A1 (en) | 1985-07-19 | 1986-07-21 | Mask for X-ray lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60160689A JPS6249623A (en) | 1985-07-19 | 1985-07-19 | X-ray exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6249623A true JPS6249623A (en) | 1987-03-04 |
Family
ID=15720336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60160689A Pending JPS6249623A (en) | 1985-07-19 | 1985-07-19 | X-ray exposure mask |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6249623A (en) |
| DE (1) | DE3624566A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0217627A (en) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X-ray aligner |
| JPH02181908A (en) * | 1989-01-09 | 1990-07-16 | Canon Inc | X-ray mask structure body, x-ray aligner and x-ray exposure |
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|---|---|---|---|---|
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| JPS55157739A (en) * | 1979-05-29 | 1980-12-08 | Nec Corp | X-ray exposure mask |
| JPS6068339A (en) * | 1983-09-26 | 1985-04-18 | Canon Inc | Structural body of mask for lithography |
| JPS60180123A (en) * | 1984-02-13 | 1985-09-13 | Yokogawa Hewlett Packard Ltd | Structural body for x-ray mask |
| JPS60186840A (en) * | 1984-02-16 | 1985-09-24 | ヒューレット・パッカード・カンパニー | Anode adhesion method and apparatus for x ray mask |
| JPS60198819A (en) * | 1984-03-23 | 1985-10-08 | Canon Inc | Mask structure for lithography |
| JPS60251620A (en) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | x-ray mask |
| JPS6135449A (en) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Mask for roentgen lithography |
| JPS61140942A (en) * | 1984-12-13 | 1986-06-28 | Canon Inc | Mask structure for lithography |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3435177A1 (en) * | 1983-09-26 | 1985-04-11 | Canon K.K., Tokio/Tokyo | MASK FOR LITHOGRAPHIC PURPOSES |
-
1985
- 1985-07-19 JP JP60160689A patent/JPS6249623A/en active Pending
-
1986
- 1986-07-21 DE DE19863624566 patent/DE3624566A1/en active Granted
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52105777A (en) * | 1976-03-02 | 1977-09-05 | Toshiba Corp | Microscopic diagram transcribing device |
| JPS55157739A (en) * | 1979-05-29 | 1980-12-08 | Nec Corp | X-ray exposure mask |
| JPS6068339A (en) * | 1983-09-26 | 1985-04-18 | Canon Inc | Structural body of mask for lithography |
| JPS60180123A (en) * | 1984-02-13 | 1985-09-13 | Yokogawa Hewlett Packard Ltd | Structural body for x-ray mask |
| JPS60186840A (en) * | 1984-02-16 | 1985-09-24 | ヒューレット・パッカード・カンパニー | Anode adhesion method and apparatus for x ray mask |
| JPS60198819A (en) * | 1984-03-23 | 1985-10-08 | Canon Inc | Mask structure for lithography |
| JPS60251620A (en) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | x-ray mask |
| JPS6135449A (en) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Mask for roentgen lithography |
| JPS61140942A (en) * | 1984-12-13 | 1986-06-28 | Canon Inc | Mask structure for lithography |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0217627A (en) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X-ray aligner |
| JPH02181908A (en) * | 1989-01-09 | 1990-07-16 | Canon Inc | X-ray mask structure body, x-ray aligner and x-ray exposure |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3624566C2 (en) | 1989-11-02 |
| DE3624566A1 (en) | 1987-04-16 |
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