JPS6252927U - - Google Patents
Info
- Publication number
- JPS6252927U JPS6252927U JP14461485U JP14461485U JPS6252927U JP S6252927 U JPS6252927 U JP S6252927U JP 14461485 U JP14461485 U JP 14461485U JP 14461485 U JP14461485 U JP 14461485U JP S6252927 U JPS6252927 U JP S6252927U
- Authority
- JP
- Japan
- Prior art keywords
- infrared lamp
- tube
- reaction tube
- susceptor
- conductive mesh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案ＣＶＤ装置の断面模式図、第２
図はそのＡ―Ａ′断面模式図、第３図は反応ガス
の供給量とシリコン層の成長速度の関係を示す特
性図である。
１……反応管、２……ガス導入管、３……排気
管、４……サセプタ、５……赤外線ランプ、７…
…熱電体、８……直流電源、９……コイル、１０
……高周波電源、１１……メツシユ、１２……第
２の直流電源。
Figure 1 is a schematic cross-sectional view of the CVD apparatus of the present invention, Figure 2
The figure is a schematic cross-sectional view taken along the line AA', and FIG. 3 is a characteristic diagram showing the relationship between the supply amount of the reactant gas and the growth rate of the silicon layer. DESCRIPTION OF SYMBOLS 1...Reaction tube, 2...Gas introduction pipe, 3...Exhaust pipe, 4...Susceptor, 5...Infrared lamp, 7...
...thermoelectric body, 8...DC power supply, 9...coil, 10
...High frequency power supply, 11...Mesh, 12...Second DC power supply.
Claims (1)
装置において、一端に反応ガスを導入するガス導
入管を有し、他端に排気管を具備した反応管と、
この反応管内に配されるサセプタと、上記反応管
外周部所定位置に設けられ、上記サセプタを加熱
するための赤外線ランプと、この赤外線ランプ内
周部に設けられた導電性のメツシユと、このメツ
シユに正電圧を印加する電圧印加手段と、から成
るＣＶＤ装置。 CVD to grow a silicon layer on a base in a vapor phase
In the apparatus, a reaction tube having a gas introduction tube for introducing a reaction gas at one end and an exhaust tube at the other end;
A susceptor disposed within the reaction tube, an infrared lamp provided at a predetermined position on the outer circumference of the reaction tube for heating the susceptor, a conductive mesh provided on the inner circumference of the infrared lamp, and a conductive mesh provided on the inner circumference of the infrared lamp. Voltage application means for applying a positive voltage to the CVD apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14461485U JPH058671Y2 (en) | 1985-09-20 | 1985-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14461485U JPH058671Y2 (en) | 1985-09-20 | 1985-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6252927U true JPS6252927U (en) | 1987-04-02 |
| JPH058671Y2 JPH058671Y2 (en) | 1993-03-04 |
Family
ID=31055379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14461485U Expired - Lifetime JPH058671Y2 (en) | 1985-09-20 | 1985-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH058671Y2 (en) |
-
1985
- 1985-09-20 JP JP14461485U patent/JPH058671Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH058671Y2 (en) | 1993-03-04 |