JPS6253944B2 - - Google Patents

Info

Publication number
JPS6253944B2
JPS6253944B2 JP57165003A JP16500382A JPS6253944B2 JP S6253944 B2 JPS6253944 B2 JP S6253944B2 JP 57165003 A JP57165003 A JP 57165003A JP 16500382 A JP16500382 A JP 16500382A JP S6253944 B2 JPS6253944 B2 JP S6253944B2
Authority
JP
Japan
Prior art keywords
lifetime
light
graph
intersection
pulse width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57165003A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5955013A (ja
Inventor
Akira Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP57165003A priority Critical patent/JPS5955013A/ja
Publication of JPS5955013A publication Critical patent/JPS5955013A/ja
Publication of JPS6253944B2 publication Critical patent/JPS6253944B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP57165003A 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法 Granted JPS5955013A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57165003A JPS5955013A (ja) 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57165003A JPS5955013A (ja) 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法

Publications (2)

Publication Number Publication Date
JPS5955013A JPS5955013A (ja) 1984-03-29
JPS6253944B2 true JPS6253944B2 (fr) 1987-11-12

Family

ID=15803992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57165003A Granted JPS5955013A (ja) 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法

Country Status (1)

Country Link
JP (1) JPS5955013A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2538204B1 (fr) * 2010-02-15 2018-02-21 National University Corporation Tokyo University Of Agriculture and Technology Procédé de mesure de la durée de vie d'un support photoinduit, procédé de mesure de l'efficacité d'une incidence lumineuse, dispositif de mesure de la durée de vie d'un support photoinduit et dispositif de mesure de l'efficacité d'une incidence lumineuse
JP5706776B2 (ja) * 2011-07-21 2015-04-22 株式会社半導体エネルギー研究所 半導体基板の評価方法
JP5590002B2 (ja) * 2011-10-12 2014-09-17 信越半導体株式会社 金属汚染評価方法及びエピタキシャルウェーハの製造方法
JP5846899B2 (ja) * 2011-12-23 2016-01-20 株式会社半導体エネルギー研究所 半導体基板の解析方法
JP6826007B2 (ja) * 2017-06-29 2021-02-03 京セラ株式会社 光誘起キャリアのバルクキャリアライフタイムの測定方法および測定装置
JP7249395B1 (ja) * 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法
EP4672307A1 (fr) * 2023-02-24 2025-12-31 Sumco Corporation Procédé et dispositif d'évaluation d'échantillon de semi-conducteur ainsi que procédé de fabrication de tranche de semi-conducteur

Also Published As

Publication number Publication date
JPS5955013A (ja) 1984-03-29

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