JPS6259886B2 - - Google Patents

Info

Publication number
JPS6259886B2
JPS6259886B2 JP57021209A JP2120982A JPS6259886B2 JP S6259886 B2 JPS6259886 B2 JP S6259886B2 JP 57021209 A JP57021209 A JP 57021209A JP 2120982 A JP2120982 A JP 2120982A JP S6259886 B2 JPS6259886 B2 JP S6259886B2
Authority
JP
Japan
Prior art keywords
semiconductor
weight
present
purity
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57021209A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58139422A (ja
Inventor
Teruyuki Nitsuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOHOKU DAIGAKU GAKUCHO
Original Assignee
TOHOKU DAIGAKU GAKUCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOHOKU DAIGAKU GAKUCHO filed Critical TOHOKU DAIGAKU GAKUCHO
Priority to JP57021209A priority Critical patent/JPS58139422A/ja
Publication of JPS58139422A publication Critical patent/JPS58139422A/ja
Publication of JPS6259886B2 publication Critical patent/JPS6259886B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/10—Alloys based on copper with silicon as the next major constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP57021209A 1982-02-15 1982-02-15 Ｃｕ−Ｓｉ合金半導体とその製造法 Granted JPS58139422A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57021209A JPS58139422A (ja) 1982-02-15 1982-02-15 Ｃｕ−Ｓｉ合金半導体とその製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57021209A JPS58139422A (ja) 1982-02-15 1982-02-15 Ｃｕ−Ｓｉ合金半導体とその製造法

Publications (2)

Publication Number Publication Date
JPS58139422A JPS58139422A (ja) 1983-08-18
JPS6259886B2 true JPS6259886B2 (de) 1987-12-14

Family

ID=12048596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57021209A Granted JPS58139422A (ja) 1982-02-15 1982-02-15 Ｃｕ−Ｓｉ合金半導体とその製造法

Country Status (1)

Country Link
JP (1) JPS58139422A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69132842T2 (de) * 1990-08-01 2002-08-01 Ibm Nassätzverfahren mit hoher Selektivität zwischen Cu und Cu3Ge

Also Published As

Publication number Publication date
JPS58139422A (ja) 1983-08-18

Similar Documents

Publication Publication Date Title
Masumoto et al. The preparation and properties of ZnSiAs2, ZnGeP2 and CdGeP2 semiconducting compounds
Harman et al. Preparation and some physical properties of Bi2Te3, Sb2Te3, and As2Te3
US2882468A (en) Semiconducting materials and devices made therefrom
US3017446A (en) Preparation of material for thermocouples
US3496118A (en) Iiib-vb compounds
US20030168094A1 (en) Thermoelectric material and process for manufacturing the same
US2833969A (en) Semi-conductor devices and methods of making same
JP2816945B2 (ja) ｐ−ｎ転移防止特性を有するＢｉ２ Ｔｅ３ 系熱電材料組成物
US3238134A (en) Method for producing single-phase mixed crystals
US2882467A (en) Semiconducting materials and devices made therefrom
CN101876085A (zh) 一种多晶硅锭及其制备方法
US2990439A (en) Thermocouples
GB827724A (en) Improvements in or relating to thermoelectric heat pumps
US2995613A (en) Semiconductive materials exhibiting thermoelectric properties
US2817799A (en) Semi-conductor devices employing cadmium telluride
Marin et al. Compositional, structural, optical and electrical characterization of CulnTe2 grown by the tellurization of stoichiometric Cu and In in the liquid phase
CN108342775B (zh) 一种钽掺杂β氧化镓晶态材料及其制备方法和应用
JPS6239809B2 (de)
JPH0832588B2 (ja) 熱電半導体材料およびその製造方法
US2997410A (en) Single crystalline alloys
JPS6240844B2 (de)
Fiorito et al. A Possible Method for the Growth of Homogeneous Mercury Cadmium Telluride Single Crystals
US2820185A (en) Semi-conductor devices and methods of making same
JPS58139422A (ja) Ｃｕ−Ｓｉ合金半導体とその製造法
US2956023A (en) Semiconductor elements