JPS627135B2 - - Google Patents

Info

Publication number
JPS627135B2
JPS627135B2 JP19279581A JP19279581A JPS627135B2 JP S627135 B2 JPS627135 B2 JP S627135B2 JP 19279581 A JP19279581 A JP 19279581A JP 19279581 A JP19279581 A JP 19279581A JP S627135 B2 JPS627135 B2 JP S627135B2
Authority
JP
Japan
Prior art keywords
enamel
weight
substrate
synthetic mica
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19279581A
Other languages
Japanese (ja)
Other versions
JPS5895626A (en
Inventor
Kunihide Sawamura
Masayuki Saito
Hiroshi Oohira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP19279581A priority Critical patent/JPS5895626A/en
Publication of JPS5895626A publication Critical patent/JPS5895626A/en
Publication of JPS627135B2 publication Critical patent/JPS627135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Glass Compositions (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Description

【発明の詳細な説明】 発明の技術分野 この発明は、特にハイブリツドICに適した結
晶性ホーロー基板に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a crystalline hollow substrate particularly suitable for hybrid ICs.

発明の技術的背景及びその問題点 ホーロー基板は、鉄板上にホーローを塗布焼き
付けたもので、従来のプリント基板、アルミナ基
板と同様にハイブリツドIC搭載用基板として、
カメラのフラツシユバルブアレイ、電話器のコン
タクト・プレイト等に使われている。芯が金属で
あり、機械的強度が高く、熱放散性が良く、且つ
低価格であるが、次の様な欠点をもつていること
が判明している。(1)通常用いられているホーロー
基板では、製造工程で下地金属の変態点、即わち
約900℃以上に昇温するようなホーロー掛けする
ことができない。下地金属の結晶構造が変化する
からである。この為900℃以下、例えば750〜850
℃でホーロー掛け可能なガラスフリツトが用いら
れている。このガラスフリツトは軟化点が550〜
650℃であるから、このホーロー基板上にホーロ
ー基板用導体・抵抗等を印刷し焼付ける温度は、
650℃以下に制限されることになる。(2)ホーロー
と導体・抵抗等との密着強度が低い。(3)ホーロー
基板上に焼付けた抵抗をレーザートリミングする
と、ホーロー中にクラシツクが発生したり、下地
鉄心が露出したりして信頼性が低下する。(4)ホー
ロー基板端部に、ドツグボーンと呼ばれるホーロ
ー厚の厚い箇所が縁状に形成され、厚膜回路の印
刷精度を低くする。
Technical Background of the Invention and Problems Enameled substrates are made by coating and baking enamel on an iron plate, and can be used as a substrate for mounting hybrid ICs in the same way as conventional printed circuit boards and alumina substrates.
Used in flash valve arrays for cameras, contact plates for telephones, etc. Although the core is made of metal, it has high mechanical strength, good heat dissipation, and low cost, it has been found that it has the following drawbacks. (1) Enamel substrates that are commonly used cannot be enameled in a manner that would raise the temperature above the transformation point of the base metal, that is, approximately 900°C during the manufacturing process. This is because the crystal structure of the underlying metal changes. For this reason, below 900℃, e.g. 750 to 850
Glass frit that can be enameled at ℃ is used. This glass frit has a softening point of 550~
Since the temperature is 650℃, the temperature at which conductors, resistors, etc. for the enamel board are printed and baked on this enamel board is:
The temperature will be limited to 650℃ or less. (2) The adhesion strength between the enamel and the conductor/resistance is low. (3) Laser trimming of a resistor baked onto an enamel substrate may cause cracks in the enamel or expose the underlying core, reducing reliability. (4) A thick enamel area called a dog bone is formed in the shape of an edge at the end of the enamel substrate, reducing the printing accuracy of thick film circuits.

発明の目的 この発明はこのように数えられる欠点を除き改
良された結晶性ホーロー基板を提供するものであ
る。
OBJECTS OF THE INVENTION The present invention provides an improved crystalline enamel substrate that eliminates the drawbacks mentioned above.

発明の概要 即ちこの発明はフツ素金雲母固溶体の微結晶60
〜100重量%と、ガラス質酸化物0〜40重量%と
からなる結晶性ホーローで被覆されたことを特徴
とするホーロー基板にある。
Summary of the Invention That is, this invention provides microcrystalline 60% of a fluorine phlogopite solid solution.
The enamel substrate is coated with a crystalline enamel consisting of 100% by weight and 0 to 40% by weight of a glassy oxide.

この発明でフツ素金雲母固溶体は、一般式 MMg3-oAl2/3n(M′M″3O10)F2 で示される合成雲母に相当する。ただし、式中n
は3/4n21/8で、Mはアルカリ金属、ア
ルカリ土類金属群の配位数12を有するイオンの群
から、M′はAl、Cr、Zn、Bなどの配位数4で、
正四面体配位の二価または三価イオンの群から、
M″はSi、Ti、Ge、Zrなどの正四面体配位を示す
四価のイオンの群から、それぞれ選択される。こ
の合成雲母60〜100重量%と、ガラス質酸化物40
〜0重量%とからなる配合物を、先ず調整する。
In this invention, the fluorine phlogopite solid solution corresponds to synthetic mica represented by the general formula MMg 3-o Al2/3n (M′M″ 3 O 10 )F 2 .However, in the formula, n
is 3/4n21/8, M is from a group of ions having a coordination number of 12 such as alkali metals and alkaline earth metals, and M' is a coordination number of 4 such as Al, Cr, Zn, B, etc.
From a group of divalent or trivalent ions with tetrahedral coordination,
M″ is selected from the group of tetravalent ions exhibiting regular tetrahedral coordination such as Si, Ti, Ge, and Zr. 60 to 100% by weight of this synthetic mica and 40% by weight of the glassy oxide.
A formulation consisting of ~0% by weight is first prepared.

次いでこの原料配合物をよく混合し、加熱溶融
する。この加熱溶融温度は、前記合成雲母、ガラ
ス質酸化物の種類、配合割合によつても差はある
が、一般的には1400〜1450℃で充分である。この
点についての詳細は特許第564786号(東芝出願)
を参照するとよい。
Next, this raw material mixture is thoroughly mixed and heated to melt. The heating melting temperature varies depending on the type and blending ratio of the synthetic mica and glassy oxide, but generally 1400 to 1450°C is sufficient. For details on this point, see Patent No. 564786 (toshiba application)
Please refer to .

尚こゝで原料として前記合成雲母とガラス質酸
化物の混合物を用いず、前記合成雲母に相当する
ガラス質酸化物との混合物を用いても良い。
Note that instead of using the mixture of the synthetic mica and the glassy oxide as the raw material, a mixture of the synthetic mica and a glassy oxide corresponding to the synthetic mica may be used.

このように溶融された原料成分はその流動性の
あるうちに後々粉砕し易い様な形状に成形する
か、或るいは水砕してフリツトとする。これを再
び750〜1100℃の温度に加熱する。この再加熱処
理によつて加熱当初透明であつたものに合成雲母
の微結晶が析出し、硬度、強度等を増す一方不透
明なセラミツク状物となる。
The raw material components thus molten are molded into a shape that can be easily crushed later while they still have fluidity, or are pulverized to form a frit. This is heated again to a temperature of 750-1100°C. By this reheating treatment, microcrystals of synthetic mica precipitate from the initially transparent material, which increases hardness, strength, etc., and becomes an opaque ceramic-like material.

こゝで使用できる前記一般式の合成雲母として
は、たとえばKMg3/2Al(AlSi3O10)F2、K0.8
Ba0.1Mg9/4AL1/2(Al0.9Cr0.1Si3O10)F2
KMg3/8Al7/4(BSi3O10)F2、KMg3/4Al3/2
(AlSi2.9Ti0.1O10)F2など多くの化合物が挙げら
れ、これらは一種で、あるいは二種以上の混合物
で用いて差支えない。ここで合成雲母成分中の
Mgの一部を置換したAlが3/4〜21/8原子の範囲外
になると硝子化し難く加工性が悪くなるので、
Mgの一部を置換したAl3/4〜21/8原子の範囲
外に留めておく必要がある。また一方の他の成分
として使用できるガラス質酸化物としてはたとえ
ば、PbO、SiO2、B2O3、P2O5、K2O、Na2O、
CaOなどのごとく溶融後固化した際ガラス化し易
い酸化物が好ましい。さらにこれら両成分の配合
比が前記範囲を越えると、すなわち、合成雲母成
分に対しガラス成分が重量比で40%を越えると、
加熱混溶によるガラス化はできるが、再加熱処理
による合成雲母の析出が著しく困難となるので、
上記範囲を越えることは好ましくない。
Examples of the synthetic mica having the above general formula that can be used here include KMg 3/2 Al(AlSi 3 O 10 )F 2 and K 0.8
Ba 0. 1 Mg 9/4 AL 1/2 (Al 0. 9 Cr 0. 1 Si 3 O 10 ) F 2 ,
KMg 3/8 Al 7/4 (BSi 3 O 10 ) F 2 , KMg 3/4 Al 3/2
There are many compounds such as (AlSi 2 . 9 Ti 0 . 1 O 10 )F 2 , and these may be used alone or in a mixture of two or more. Here, in the synthetic mica component
If Al that has partially substituted Mg is outside the range of 3/4 to 21/8 atoms, it will be difficult to form into glass and the workability will be poor.
It is necessary to keep it outside the range of Al3/4 to 21/8 atoms that have partially substituted Mg. Glassy oxides that can be used as other components include, for example, PbO, SiO 2 , B 2 O 3 , P 2 O 5 , K 2 O, Na 2 O,
Oxides that easily vitrify when solidified after melting, such as CaO, are preferred. Furthermore, if the blending ratio of these two components exceeds the above range, that is, if the weight ratio of the glass component to the synthetic mica component exceeds 40%,
Although it is possible to vitrify by heating and mixing, it is extremely difficult to precipitate synthetic mica by reheating treatment.
Exceeding the above range is not preferable.

次いでこのセラミツク状物を粉砕して得られた
フリツト量100重量部に対し、20重量部以下の
Fe、Co、Mn、Ni等のホーローと鉄板との結合を
強める酸化物を加え、スプレー、電着、浸漬法等
通常の施釉方法によりホーロー掛けを行ない900
℃以下の温度で焼付ける。ホーローと下地金属と
の結合を強めるため通常のニツケルメルキ処理の
他に、下地金属をブラステイングしたり、下釉掛
けを施してもさし支えない。
Next, 20 parts by weight or less of the frit obtained by crushing this ceramic material is added to 100 parts by weight.
Oxides such as Fe, Co, Mn, and Ni that strengthen the bond between the enamel and the iron plate are added, and enamel is applied using normal glazing methods such as spraying, electrodeposition, and dipping.900
Bake at a temperature below ℃. In order to strengthen the bond between the enamel and the underlying metal, in addition to the usual nickel-melting treatment, the underlying metal may be blasted or underglazed.

尚上記フリツト中の結晶量を適宜調節し、水砕
して得たフリツトを再加熱処理をせずに用いても
良ろしい。又このホーロー基板を更に750〜900℃
の温度で加熱処理を施すことによつて、その結晶
量を増加させてもよろしい。こゝでホーロー層の
膨張係数は、その機械的強度を高めるために下地
鉄芯のそれより低く選ぶことがよろしい。
Incidentally, the amount of crystals in the above-mentioned frit may be adjusted appropriately, and the frit obtained by pulverization may be used without reheating. In addition, this enamel board is further heated to 750 to 900℃.
The amount of crystals may be increased by performing heat treatment at a temperature of . Here, the expansion coefficient of the enamel layer is preferably selected to be lower than that of the base iron core in order to increase its mechanical strength.

以上のようにして得られた結晶性ホーロー基板
ではホーローは、フツ素金雲母固溶体の微結晶か
らなり、通常のホーロー基板のもつ各種の欠点を
除いている。このホーローの軟化温度は増加し、
ホーローと厚膜導体との密着強度も増加し、機械
的加工性が向上し、研削、研磨、切断等が可能に
なり、例えば研磨によりドツグボーンのない平滑
な印刷性の高い基板を得させることができるよう
になる。又レーザーによるトリミング性も向上す
るが、結晶量が60%以下の場合はトリミングによ
りガラス質部分でクラシツクが発生し易く、抵抗
値変化が、通常の雰囲気下で10000時間後に0.5%
を越えてしまうので好ましくない。それ故フツ素
金雲母固溶体の微結晶60〜100重量%と、ガラス
質酸化物40〜0重量%の組成範囲が、適切なる範
囲であることがわかる。結晶性ホーローの膨張係
数を選択することによつて下地金属は、鉄に限ら
ず銅、ステンレス等他の金属、合金であつてもよ
い。
In the crystalline enamel substrate obtained as described above, the enamel is made of microcrystals of a fluorine phlogopite solid solution, and various drawbacks of ordinary enamel substrates are eliminated. The softening temperature of this enamel increases,
The adhesion strength between the enamel and the thick-film conductor has also increased, improving mechanical workability and making grinding, polishing, cutting, etc. possible. For example, polishing has made it possible to obtain a smooth substrate with no dog bones and high printability. become able to. In addition, the trimming performance by laser is also improved, but if the amount of crystals is less than 60%, classics are likely to occur in the glassy part due to trimming, and the resistance value change will be 0.5% after 10,000 hours in a normal atmosphere.
This is not desirable as it exceeds the Therefore, it can be seen that a composition range of 60 to 100% by weight of microcrystals of the fluorine phlogopite solid solution and 40 to 0% by weight of the glassy oxide is an appropriate range. By selecting the expansion coefficient of the crystalline enamel, the base metal is not limited to iron, but may be other metals or alloys such as copper and stainless steel.

発明の実施例 以下実施例について説明する。Examples of the invention Examples will be described below.

0.8Ba0.1Mg9/4Al1/2(Al0.9Cr0.1Si3O10
F2300gとガラス粉末(SiO230%、B2O330%、
BaO40%)150gとの配合物をよく混合し、アル
ミナ磁器製ルツボで1450℃に保持して均一に溶融
する。この後流動性のあるうちに薄層に流しだ
す。次にこれを炉に収容し、一時間当り約50℃の
割合で850℃まで徐々に炉温を上げて約850℃で一
時間保持した後、粉砕して325メツシユ以上の粉
末とする。
K 0.8 Ba 0.1 Mg 9/4 Al 1/2 ( Al 0.9 Cr 0.1 Si 3 O 10 )
300g of F2 and glass powder ( SiO2 30%, B2O3 30 %,
Mix well the mixture with 150g of BaO (40%) and melt it uniformly by keeping it at 1450°C in an alumina porcelain crucible. After this, pour it out in a thin layer while it is still fluid. Next, this is placed in a furnace, and the furnace temperature is gradually raised to 850°C at a rate of about 50°C per hour, held at about 850°C for one hour, and then ground into a powder of 325 mesh or more.

得られた粉末100gに対してFe2O33g、
CoO0.5g、NiO0.5g、MnO21.0g、イソピルア
ルコール150c.c.、ブチルカルビトール50c.c.を混合
したスラリーを、通常のスプレー法によつて表面
をブラステイングした後、無電解ニツケルメツキ
を施した低炭素鋼の表面に880℃でホーロー掛け
を行なう。次いで、850℃に保持して結晶を成長
させる。
3 g of Fe 2 O 3 per 100 g of the obtained powder,
A slurry containing 0.5 g of CoO, 0.5 g of NiO, 1.0 g of MnO 2 , 150 c.c. of isopyl alcohol, and 50 c.c. of butyl carbitol was blasted onto the surface using a conventional spray method, and then electroless Enamel is applied to the surface of nickel-metalized low carbon steel at 880℃. Next, the temperature is maintained at 850°C to grow crystals.

発明の効果 得られたホーロー基板上の結晶性ホーローをx
線により分析したところ、フツ素金雲母固溶体が
析出していることが認められ、その結晶量は85重
量%に達することが判明した。このホーローの軟
化点は750℃以上であり、通常のホーロー基板で
のホーロー難化点550〜650℃と比べて100℃以上
増加している。そしてホーローと導体、抵抗等と
の密着強度は、従来のものと比較して1.5倍以上
に向上し、抵抗のトリミングはアルミナ基板上の
抵抗トリミングと同様、レーザーによるトリミン
グを可能にし、得られた抵抗の信頼性もアルミナ
基板上でレーザートリミングされたアルミナ基板
用抵抗に匹敵する程に高い。又、機械的加工性が
良いため、研削、研磨が可能であり、大型基板か
らの打抜き、切断により、小型基板の量産を容易
にする。尚研麿によりドツグボーンを平滑化出
来、高精度な印刷、実装を容易にさせる。
Effect of the invention The crystalline enamel on the obtained enamel substrate is
A line analysis revealed that a fluorophlogopite solid solution had precipitated, and the amount of crystals reached 85% by weight. The softening point of this enamel is 750°C or more, which is more than 100°C higher than the enamel difficulty point of a normal enamel substrate, which is 550 to 650°C. The adhesion strength between the enamel and the conductor, resistor, etc. has been improved by more than 1.5 times compared to conventional ones, and the trimming of the resistor can be done using a laser, similar to the trimming of the resistor on an alumina substrate. The reliability of the resistor is also as high as that of alumina substrate resistors that are laser trimmed on an alumina substrate. In addition, since it has good mechanical workability, it can be ground and polished, and it facilitates the mass production of small substrates by punching and cutting from large substrates. Sho Kenmaro allows the dogbone to be smoothed, making high-precision printing and mounting easier.

このようなこの発明の結晶性ホーロー基板は、
従来のホーロー基板のもつ欠点を除き特に機械的
加工性を良好にし信頼性を高めて、ハイブリツド
IC実装等にすぐれたものになつている。
Such a crystalline enamel substrate of this invention,
By eliminating the drawbacks of conventional hollow substrates and improving mechanical workability and reliability, we have created a hybrid
It has become excellent for IC mounting, etc.

Claims (1)

【特許請求の範囲】[Claims] 1 フツ素金雲母固溶体の微結晶60〜100重量%
と、ガラス質酸化物0〜40重量%とからなる結晶
性ホーローで被覆されていることを特徴とするホ
ーロー基板。
1 60-100% by weight of microcrystals of fluorine phlogopite solid solution
and 0 to 40% by weight of a glassy oxide.
JP19279581A 1981-12-02 1981-12-02 Base of crystalline porcelain enamel Granted JPS5895626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19279581A JPS5895626A (en) 1981-12-02 1981-12-02 Base of crystalline porcelain enamel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19279581A JPS5895626A (en) 1981-12-02 1981-12-02 Base of crystalline porcelain enamel

Publications (2)

Publication Number Publication Date
JPS5895626A JPS5895626A (en) 1983-06-07
JPS627135B2 true JPS627135B2 (en) 1987-02-16

Family

ID=16297113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19279581A Granted JPS5895626A (en) 1981-12-02 1981-12-02 Base of crystalline porcelain enamel

Country Status (1)

Country Link
JP (1) JPS5895626A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63274780A (en) * 1987-04-30 1988-11-11 Matsushita Electric Ind Co Ltd Enamel ware
JPS6415354A (en) * 1987-07-08 1989-01-19 Shinagawa Refractories Co Miceous material for thermal spraying

Also Published As

Publication number Publication date
JPS5895626A (en) 1983-06-07

Similar Documents

Publication Publication Date Title
EP1047554B1 (en) Porcelain enamel composition for electronic applications
CA1276947C (en) Porcelain enamel composition and subtrates coated therewith
US3384508A (en) Method of glazing semicrystalline glass-ceramic articles and resultant intermediate layer containing composite
JPS58104043A (en) Glass ceramic for metal substrate and manufacture
US4355114A (en) Partially devitrified porcelain containing BaO.2MgO.2SiO2 and 2MgO.B2 O3 crystalline phases obtained from alkali metal free divalent metal oxide borosilicate glass
GB2038104A (en) Resistor material resistor made therefrom and method of making the same
US4355115A (en) Borosilicate glass frit with MgO and BaO
JPWO2001090012A1 (en) Glass composition and glass-forming material containing the composition
JPS627135B2 (en)
JPH01239038A (en) Glass ceramic for coating metal substrates
JP3173529B2 (en) Black natural marble-like crystallized glass
JPS6221739B2 (en)
JPS58217453A (en) Crystallized enamel substrate
JPS5988340A (en) Enamel frit
JP2737060B2 (en) Natural marble-like crystallized glass with wine red color
JPS59131540A (en) Glass composition for insulation layer
JPH0375238A (en) Enamel frit
JPH0416420B2 (en)
JPS60172102A (en) Crystallized glass composition for coating steel plate
JP2624147B2 (en) Composition for low-temperature firing substrate
JP2000236147A (en) Glass substrate and manufacture thereof
JPS6296344A (en) Glaze composition for ceramic substrate
JPH0376642A (en) Glass-porcelain composite and preparation thereof
JP3413817B2 (en) Crystalline glass composition for coating
JPS59182246A (en) Glass composition