JPS6274331U - - Google Patents
Info
- Publication number
- JPS6274331U JPS6274331U JP16737685U JP16737685U JPS6274331U JP S6274331 U JPS6274331 U JP S6274331U JP 16737685 U JP16737685 U JP 16737685U JP 16737685 U JP16737685 U JP 16737685U JP S6274331 U JPS6274331 U JP S6274331U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- heat
- inner tube
- heating furnace
- tube made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002791 soaking Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000003779 heat-resistant material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Description
第１図は本実施例の要部の断面図であり、第２
図は従来例の断面図である。
１……内管、２……シリコンナイトライド、３
……均熱管、４……ヒータ。
FIG. 1 is a sectional view of the main parts of this embodiment, and the second
The figure is a sectional view of a conventional example. 1... Inner tube, 2... Silicon nitride, 3
... Soaking tube, 4... Heater.
Claims (1)
導入し、内管の外側にセータを設けて、前記内管
を加熱して、前記半導体を加熱処理する、半導体
の加熱炉において、内管とヒータとの間に耐熱材
よりなる均熱管を設け、前記均熱管の内側にシリ
コンナイトライド被膜を設けてなる半導体の加熱
炉。 In a semiconductor heating furnace, a semiconductor is held in an inner tube made of quartz, oxygen gas is introduced, a sweater is provided on the outside of the inner tube, the inner tube is heated, and the semiconductor is heat-treated. A semiconductor heating furnace comprising a heat soaking tube made of a heat resistant material provided between the heater and a silicon nitride coating on the inside of the heat soaking tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16737685U JPS6274331U (en) | 1985-10-30 | 1985-10-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16737685U JPS6274331U (en) | 1985-10-30 | 1985-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6274331U true JPS6274331U (en) | 1987-05-13 |
Family
ID=31099248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16737685U Pending JPS6274331U (en) | 1985-10-30 | 1985-10-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6274331U (en) |
-
1985
- 1985-10-30 JP JP16737685U patent/JPS6274331U/ja active Pending