JPS6276536A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To increase a moisture resistance by providing an aluminum wiring that is not used for a circuit operation in a region between an aluminum signal wiring and the dicing line of a semiconductor chip, in said region no PSG being present. CONSTITUTION:An aluminum wiring 30 having no direct relation with a circuit operation is provided in a region which is between a dicing line 6 and an aluminum signal wiring 4 and wherein a PSG 9 does not exist. Between the PSG 9 and an insulative film 2 below the aluminum signal wirings 4 and 5 through which signals used for the circuit operation pass, the other layer of a poly-silicon or the like may be present. Thus, the aluminum wiring 3 consumes water and a variety of ions contained in water and can prevent the invasion of the water and the various ions contained in the water as a structural barrier.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a resin-encapsulated semiconductor integrated circuit device. [Prior Art] In a conventional resin-encapsulated semiconductor integrated circuit device, the semiconductor chip is Since there is a risk of disconnection if wiring is provided at the outermost circumference, there is a blank area where no wiring is provided, and no wiring is provided outside the aluminum signal wiring at the outermost circumference.

[Problem that the invention seeks to solve]

In such a conventional semiconductor integrated circuit device, there is a possibility that water may enter the dicing line at the outermost periphery of the semiconductor chip. In general, under conditions where sufficient water molecules exist for aluminum, aluminum hydroxide [Al(OH)
s) is easily formed, and aluminum hydroxide has the property of being soluble in both acids and alkalis. Therefore, aluminum signal wiring is easily attacked by water containing impurities such as alkali metal ions and nitrogen ions. Furthermore, P s G (phospho
There is a problem in that the phosphoric acid (-5ilicate Plass) reacts with water to produce phosphoric acid, and the phosphoric acid corrodes the real aluminum signal wiring.

This invention solves all of the above problems.

[Means for solving problems]

A semiconductor integrated circuit device according to the present invention is a semiconductor integrated circuit device in which an aluminum signal wiring used for circuit operation is provided via a PEG, in which a PSG is provided between a dicing line of a semiconductor chip and the aluminum signal wiring. A non-existing area is provided, and aluminum wiring that is not used for circuit operation is further provided above the area.

[Effect]

In the semiconductor integrated circuit device of the present invention, when water enters from the dicing line, the infiltrated water is consumed by the aluminum wiring that is not used for circuit operation and is provided in the area where PSG is not present at the outermost periphery of the chip.
By preventing water from penetrating into the region where G exists, the formation of silicic acid is prevented and corrosion of the aluminum signal wiring is prevented.

[Embodiments of the invention]

Hereinafter, the present invention will be explained based on the embodiment VC shown in the drawings.

FIG. 1 is a plan view showing a chip of a semiconductor integrated circuit device according to an embodiment of the present invention.
It is an enlarged sectional view by VC. Released in Figures 1 and 8,
(11 is a semiconductor substrate of a semiconductor integrated circuit, +21i is an insulating film formed on the surface of this semiconductor substrate, +31//i is an aluminum wiring not directly related to circuit operation, and this wiring (
3) is provided in a region where no PSG (9) exists between the dicing line (6) and the aluminum signal wiring (4). (41, (5) is an aluminum signal wiring through which signals used for circuit operation pass, and aluminum wiring +
41,! P S G +91 under 5+ and the insulating film (
2) There is nothing in the example shown in the figure, but P S G
Another layer such as polysilicon may be interposed between +91 and the insulating film (2). (This is a dicing line used when dicing 611-i semiconductor integrated circuit chips.

Passivation film that protects the tel V'i surface (8
) is the path of infiltrating water.

P 13 G between aluminum wiring not used for circuit operation (31 is aluminum signal wiring 14 used for circuit operation), (5) and dicing line (6) [9]
It is provided along the entire inner periphery of the dicing line (6) of the chip in a region where the dicing line (6) does not exist. A resin-sealed semiconductor integrated circuit device is constructed by resin-sealing the chip shown in FIG. 1. Next, the operation of the above embodiment will be explained with reference to FIG. 2. Aluminum signal wiring (4), (
If 6) is immersed in water, there is a risk of corrosion and wire breakage, so the surface is protected by a passivation film (7) to prevent ingress from the vertical direction, so there is no problem, but ingress from the horizontal direction , since there is no passivation film on the dicing line (6), the dicing line (6)
Water enters in the direction of the arrow (8) through between the semiconductor substrate (1) and the passivation film (7). was applied.

The aluminum wiring (3), which is not directly related to circuit operation, consumes water and various ions contained in water, and serves as a structural barrier to prevent water and various ions contained in water from entering the interior. Furthermore, P S G
By retreating +91 to the inside, the aluminum signal wiring +41. +41 necessary for internal circuit operation is removed from phosphoric acid generated by the reaction between PSet91 and water. +51” protection.

In the above embodiment, a semiconductor integrated circuit having only aluminum signal wirings (4) and (5) has been described, but the present invention can be applied to any semiconductor integrated circuit.

〔Effect of the invention〕

As described above, according to the present invention, the aluminum signal wiring 1Ps()? used for circuit operation? In the semiconductor integrated circuit provided through the wafer, aluminum wiring that is not used for circuit operation is provided in the area where PSG does not exist between the aluminum signal wiring and the dicing line of the semiconductor chip. It has the effect of increasing the moisture resistance of.

[Brief explanation of drawings]

FIG. 1 is a plan view of a semiconductor integrated circuit according to an embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view taken along the line ■--■ in FIG. In the figure, 111 is a semiconductor substrate, (21 is an insulating film, (3) is an aluminum wiring not directly related to circuit operation, +41, (
6) is an aluminum interconnect, (6) is a dicing line, (7) is a passivation film, (8) is a path for infiltrating water, and (9) is a PSG. In addition, in the drawings, the same reference numerals indicate the same or similar parts.

Claims (2)

[Claims] (1) In a resin-sealed semiconductor device formed by resin-sealing a semiconductor integrated circuit chip, at least PS is placed on the semiconductor substrate.
An aluminum signal wiring used for circuit operation is provided through the G, a region where no PSG is present is provided between the dicing line of the semiconductor chip and the aluminum signal wiring, and an aluminum signal wiring that is not used for circuit operation is provided above the aluminum signal wiring that is not used for circuit operation. A semiconductor integrated circuit device, characterized in that wiring is provided so as not to come into contact with the PSG. (2) The semiconductor integrated circuit device according to claim 1, wherein aluminum wiring that is not used for circuit operation is provided along the entire inner circumference of the dicing line.