JPS6281020U - - Google Patents
Info
- Publication number
- JPS6281020U JPS6281020U JP17175285U JP17175285U JPS6281020U JP S6281020 U JPS6281020 U JP S6281020U JP 17175285 U JP17175285 U JP 17175285U JP 17175285 U JP17175285 U JP 17175285U JP S6281020 U JPS6281020 U JP S6281020U
- Authority
- JP
- Japan
- Prior art keywords
- liquid level
- cylinder
- position detector
- detection section
- level position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
Landscapes
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
Description
第１図は本考案の液面位置検出器を有機金属に
適用したときの構成断面図、第２図は半導体放射
線検出素子に用そる半導体基体の断面図、第３図
は半導体基体をケースに封入した半導体放射線検
出素子を表わす断面図、第４図は吸収体の厚さと
透過γ線計数率との関係線図、第５図はボンベ底
からの距離と透過γ線計数率との関係線図である
。
１……恒温槽、２……冷却媒体、３……有機金
属、４……ボンベ、７……放射線線源、８……半
導体放射線検出素子、９……測定回路系。
Figure 1 is a cross-sectional view of the structure when the liquid level position detector of the present invention is applied to an organic metal, Figure 2 is a cross-sectional view of a semiconductor substrate used in a semiconductor radiation detection element, and Figure 3 is a cross-sectional view of a semiconductor substrate used in a case. A cross-sectional view showing the encapsulated semiconductor radiation detection element, Figure 4 is a relationship diagram between absorber thickness and transmitted gamma ray count rate, and Figure 5 is a relationship line between distance from the bottom of the cylinder and transmitted gamma ray count rate. It is a diagram. DESCRIPTION OF SYMBOLS 1... Constant temperature bath, 2... Cooling medium, 3... Organic metal, 4... Cylinder, 7... Radiation source, 8... Semiconductor radiation detection element, 9... Measurement circuit system.
Claims (1)
面近傍に対称的に配置し、前記ボンベを透過する
放射線計数率の差を前記検出部に接続する測定回
路系により測定して前記ボンベ内に収容された液
状物質の液面を検出するものにおいて、前記検出
部に半導体放射線検出素子を用いることを特徴と
する液面位置検出器。 (2) 実用新案登録請求の範囲第１項記載の検出
器において、液状物質が液化ガスであることを特
徴とする液面位置検出器。 (3) 実用新案登録請求の範囲第１項記載の検出
器において、液状物質が有機金属であることを特
徴とする液面位置検出器。[Claims for Utility Model Registration] (1) A measurement circuit in which a radiation source and a radiation detection section are arranged symmetrically near the side surface of a cylinder, and the difference in the count rate of radiation passing through the cylinder is connected to the detection section. A liquid level position detector for detecting the liquid level of a liquid substance contained in the cylinder by measuring with a system, characterized in that a semiconductor radiation detection element is used in the detection section. (2) A liquid level position detector according to claim 1, wherein the liquid substance is a liquefied gas. (3) A liquid level position detector according to claim 1 of the utility model registration, characterized in that the liquid substance is an organic metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17175285U JPS6281020U (en) | 1985-11-08 | 1985-11-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17175285U JPS6281020U (en) | 1985-11-08 | 1985-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6281020U true JPS6281020U (en) | 1987-05-23 |
Family
ID=31107667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17175285U Pending JPS6281020U (en) | 1985-11-08 | 1985-11-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6281020U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS495658A (en) * | 1972-05-06 | 1974-01-18 | ||
| JPS59227168A (en) * | 1983-06-08 | 1984-12-20 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radioactive ray detector |
-
1985
- 1985-11-08 JP JP17175285U patent/JPS6281020U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS495658A (en) * | 1972-05-06 | 1974-01-18 | ||
| JPS59227168A (en) * | 1983-06-08 | 1984-12-20 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radioactive ray detector |
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