JPS6281446A - Epoxy resin composition - Google Patents
Epoxy resin compositionInfo
- Publication number
- JPS6281446A JPS6281446A JP60220232A JP22023285A JPS6281446A JP S6281446 A JPS6281446 A JP S6281446A JP 60220232 A JP60220232 A JP 60220232A JP 22023285 A JP22023285 A JP 22023285A JP S6281446 A JPS6281446 A JP S6281446A
- Authority
- JP
- Japan
- Prior art keywords
- particle size
- synthetic rubber
- microns
- silica
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
- H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は熱ストレス後耐湿性に優れた、半導体封止用工
Iキシ樹脂組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a synthetic resin composition for semiconductor encapsulation, which has excellent moisture resistance after heat stress.
その特徴は、工l?キシ基を含有する合成ゴムと、粒径
の小さい充填材によ抄低応力化を図っているところにあ
る。Its characteristics are: The aim is to reduce stress during papermaking by using synthetic rubber containing xyl groups and fillers with small particle sizes.
従来半導体封止用工ぽキシ樹脂組成物には一般に最大粒
径が150ξクロン平均粒径が20ミクロン程度のシリ
pが使われているが、肉薄のフラントノ2ツケージで充
填不良を起こした9超LSIノzツケージでノぞツシベ
ーションクラックトいった千成を起こしていた。又最近
の基板への表面実装化の動きで薄型ICノ’?ツケージ
は、基板に仮留め後半出槽に浸漬されrcAツケージが
直接250〜350℃の半田の中に浸漬するという熱ス
トレスを受ける。この急激な熱ストレスのためICベレ
ッ+と樹脂、リードフレームと樹脂の間に隙間ができこ
の丸め耐湿性が著しく劣化する。この熱ストレス後の耐
湿性に優れる材料はなかった。Conventional engineered poxy resin compositions for semiconductor encapsulation have generally used silips with a maximum particle size of 150ξcm and an average particle size of about 20 microns, but the thin flannel cage caused filling failures in 9+ LSIs. I was waking up Sennari, who was cracked in the cage. Also, with the recent movement toward surface mounting on substrates, thin IC's? After the rcA cage is temporarily attached to the substrate, it is immersed in a deposition tank and subjected to heat stress as the rcA cage is directly immersed in solder at a temperature of 250 to 350°C. This rapid thermal stress creates gaps between the IC bellet and the resin, and between the lead frame and the resin, and the moisture resistance of the rounded product is significantly deteriorated. There was no material with excellent moisture resistance after this heat stress.
一方従来から合成ゴムを使用した低化カニIキシ樹脂組
成物は、色々と検討されているが、成形性(特に硬化性
、パリ、離型性)等に問題があった。例えば、カルボキ
シル基含有ジエン系ゴム質ポリマーを添加した場合〔特
開昭58−176958号〕では、ゴムが溶出し成形性
に問題があるだけでなく、親水性のカルボキシル基を含
有するため、著しく耐湿性が劣った。分子内に工Iキシ
基を2つ以上もつジエン系ゴムは、エポキシ樹脂と化学
反応によシ結合するため溶出することはないが、このゴ
ム単独では熱ストレス後の耐湿性を向上させるには不十
分である。On the other hand, although various studies have been made on low-density Crab I xy resin compositions using synthetic rubber, there have been problems with moldability (particularly curability, moldability, and mold releasability). For example, when a carboxyl group-containing diene-based rubbery polymer is added [JP-A-58-176958], not only does the rubber elute and formability is problematic, but it also contains a hydrophilic carboxyl group, so Moisture resistance was poor. Diene rubbers that have two or more I-oxy groups in their molecules do not elute because they bond with epoxy resins through chemical reactions, but this rubber alone cannot improve moisture resistance after heat stress. Not enough.
本発明は従来熱ストレスを受けた後の耐湿性に問題があ
った半導体封止用エポキシ樹脂組成物を抜本的に改良し
実用的製品の開発を目的として研究した結果、フィラー
粒径を小さくすると共にエイキシ基を含有する合成ゴム
を添加することにより、熱ストレス後の耐湿性に優れた
半導体封止用エイキシ樹脂組成物が得られることを見い
出したものである。The present invention was developed as a result of research aimed at developing practical products by fundamentally improving epoxy resin compositions for semiconductor encapsulation, which conventionally had problems with moisture resistance after being subjected to heat stress. The present inventors have discovered that by adding a synthetic rubber containing an eixy group together, an eixy resin composition for semiconductor encapsulation with excellent moisture resistance after heat stress can be obtained.
本発明は重量平均粒径が15ミクロン以下で最大粒径が
100ミクロン以下のシリカを充填材として用い、分子
内に工ぽキシ基を2つ以上含有する合成ゴムを、01〜
20tf’%含有することを特徴とする半導体封止用エ
ポキシ樹脂組成物である。The present invention uses silica with a weight average particle size of 15 microns or less and a maximum particle size of 100 microns or less as a filler, and uses synthetic rubber containing two or more engineered poxy groups in the molecule, from 01 to
This is an epoxy resin composition for semiconductor encapsulation characterized by containing 20 tf'%.
一般的に半導体封止用工ぽキシ樹脂組成物は、エポキシ
樹脂、シリカ、処理剤、硬化剤、硬化促進剤、離型剤、
難燃剤、顔料等より構成される0特に現在汎用の材料は
クレゾールノボラック型エイキシ樹脂、フェノールノボ
ラック(硬化剤)、第3級アミン(硬化促進剤)、シリ
カ(充填材)、シランカッシリング剤(シリカの表面処
理剤)等で構成される。シリカ量としては50〜80重
量%が普通である。In general, an engineered poxy resin composition for semiconductor encapsulation includes an epoxy resin, silica, a processing agent, a curing agent, a curing accelerator, a mold release agent,
Composed of flame retardants, pigments, etc. Currently, the commonly used materials are cresol novolac-type eixy resin, phenol novolac (curing agent), tertiary amine (curing accelerator), silica (filler), and silane cassillating agent ( silica surface treatment agent), etc. The amount of silica is usually 50 to 80% by weight.
本発明ではシリカとして重量平均粒径が15ミクロン以
下で最大粒径が100ミクロン以下であることが必要で
、これ以上だと熱ストレス後の耐湿性には全く効果がな
い。フラットノ!ツケージの様な薄肉のノξツケージに
は、さらに粒径を小さくしだもの例えば、重量平均粒径
が10ミクロン以下最大粒径が50ミクロン以下のもの
が好ましい。In the present invention, it is necessary for the silica to have a weight average particle size of 15 microns or less and a maximum particle size of 100 microns or less, and if it is larger than this, there is no effect on moisture resistance after heat stress. Flat no! For thin-walled wood cages, it is preferable to use particles with even smaller particle sizes, such as those with a weight average particle size of 10 microns or less and a maximum particle size of 50 microns or less.
合成ゴムとしては分子内にエイキシ基を2つ以上含む合
成ゴムを、01〜20重量%含むことが必要である。分
子内にエポキシ基を2つ以−F持たない合成ゴムは、エ
ポキシ樹脂と親和性が悪く成形時ブリードする等問題が
あシ、0.1重量%以下の添加量では効果はなく20重
is以上の添加蓋では、樹脂の強度が著1.〈低下17
又熱膨張係数、寸法変化率が大きく熱ストレス後の耐湿
性には効果がない。The synthetic rubber must contain 01 to 20% by weight of synthetic rubber containing two or more eixyx groups in the molecule. Synthetic rubbers that do not have two or more epoxy groups in the molecule have poor affinity with epoxy resins and may cause problems such as bleeding during molding, and if the amount added is less than 0.1% by weight, there is no effect and 20% is In the above additive lid, the strength of the resin is significantly 1. <Decrease 17
In addition, the thermal expansion coefficient and dimensional change rate are large, and the moisture resistance after heat stress is not effective.
このように本発明に従うと熱ストレス後の耐湿性に優れ
た半導体封止用工・エポキシ樹脂組成物を得ることがで
きる。半導体封止用途では超LSI化によりノξツケー
ジ全体のうちXC−:レットが占める体積が大きくなり
樹脂の肉厚が薄くなるといった状況下で、熱ストレス後
の耐湿性に優れた本発明の樹脂組成物は高度の信頼性を
与える点で非常に有益である。As described above, according to the present invention, it is possible to obtain an epoxy resin composition for semiconductor encapsulation that has excellent moisture resistance after heat stress. In semiconductor encapsulation applications, the resin of the present invention, which has excellent moisture resistance after heat stress, is suitable for semiconductor encapsulation applications, where the volume occupied by XC-:lets in the entire node increases due to the development of ultra-LSIs, and the resin wall thickness becomes thinner. The composition is very advantageous in that it provides a high degree of reliability.
以下、工4!キシ樹脂組成物の検討例で説明する。例で
用いた部はすべて重量部である。Below is Engineering 4! This will be explained using a study example of a resin composition. All parts used in the examples are parts by weight.
実施例1〜4 本実施例で使用したシリカは次の通りである。Examples 1-4 The silica used in this example is as follows.
溶融シリカA(電気化学工業)
重量平均粒径10ミクロン最大粒径70ミクロン溶融シ
リカB(1!気化学工業)
重量平均粒径7 ミクロン最大粒径50ミクロン結晶シ
リカC(龍 森)
重量平均粒径10ミクロン最大粒径70ミクロン本実施
例で使用したエイキシ基含有合成ゴムとは次の通シであ
る。Fused Silica A (Denki Kagaku Kogyo) Weight average particle size 10 microns Maximum particle size 70 microns Fused Silica B (1! Ki Kagaku Kogyo) Weight average particle size 7 microns Maximum particle size 50 microns Crystalline Silica C (Tatsumori) Weight average particles Diameter: 10 microns Maximum particle size: 70 microns The synthetic rubber containing eixyl groups used in this example has the following structure.
合成ゴムa:両末端工ぽキシ基含有1,4トランスタイ
プポリブタジエン(エポキシ当
1i1450)
合成ゴムb:分子内エポキシ基含有1,4トランスタイ
プぼりブタジェン(数平均分子
iii 3000 、エポキシ当量200)合成ゴムC
:分子内工Iキシ基含有1,2ビニルタイプポリブタジ
エン(数平均分子量
700、エイキシ当量220)
合成ゴムd:分子内エイキシ基含有1.2ビニルタイプ
ぼりブタジェン(数平均分子量
1000、エイキシ当量190)
合成ゴムe:分子内エポキシ基含有1.2ビニルタイプ
ぼりブタジェン(数平均分子量
1800、エポギシ当II!: 220 )実施例1〜
9
シIJ 力A −C70部、表i#r処理剤(日本ユニ
カーA−186)0.4部、合成ゴムa −e X部、
x H?キシレジン(住友化学KSCN−1025)2
0−X部、フェノールノボラック(住友ベークライト)
10部、硬化促進剤(ケーアイ化成PP−360/四国
化成2MZ = 9/1 ) 0.2部、顔料(三菱化
成)11.5部、離型剤(ヘキストジャノξンヘキスト
OP/ヘキストS=1/1)0.4部を加え混合した稜
コニーダーで混練し9種のニブキシ樹脂組成物を得た。Synthetic rubber a: 1,4 trans type polybutadiene containing engineered epoxy groups at both terminals (1i 1450 per epoxy) Synthetic rubber b: Synthesis of 1,4 trans type polybutadiene containing epoxy groups in the molecule (number average molecule III 3000, epoxy equivalent 200) Rubber C
: Internally engineered 1,2 vinyl type polybutadiene containing I xyl group (number average molecular weight 700, epoxy equivalent 220) Synthetic rubber d: 1.2 vinyl type polybutadiene containing internal epoxy group (number average molecular weight 1000, epoxy equivalent 190) Synthetic rubber e: 1.2 vinyl type butadiene containing epoxy groups in the molecule (number average molecular weight 1800, epoxy group II!: 220) Examples 1~
9 70 parts of IJ Force A-C, 0.4 parts of Table i#r treatment agent (Nippon Unicar A-186), parts of synthetic rubber a-e X,
x H? Xyresin (Sumitomo Chemical KSCN-1025) 2
0-X part, phenol novolac (Sumitomo Bakelite)
10 parts, curing accelerator (KAI Kasei PP-360/Shikoku Kasei 2MZ = 9/1) 0.2 parts, pigment (Mitsubishi Kasei) 11.5 parts, mold release agent (Hoechst Jano ξn Hoechst OP/Hoechst S = 1 /1) 0.4 part was added and kneaded in a ridge co-kneader to obtain nine types of niboxy resin compositions.
これらの成形材料の熱ストレス後耐湿性、成形性を測定
した結果表の様に比較例に比べて優れていることがわか
った。The results of measuring the moisture resistance and moldability of these molding materials after heat stress were found to be superior to those of the comparative examples as shown in the table.
比較例1
末端カルボキシル基、1fリイソゾレン(クラレLIR
−403’)合成ゴム12部を実施例中の合成ゴムB−
6の替わシに使い他は実施例と同様の原料を用いた。Comparative Example 1 Terminal carboxyl group, 1f Liisozolene (Kuraray LIR
-403') 12 parts of synthetic rubber was added to synthetic rubber B- in the example.
The same raw materials as in Example were used in place of No. 6.
比較例2
重量平均粒径20ミクロン最大粒径xsoミクロンの溶
融シリカD(龍森)を実施例中のシリカA−Cの替わり
に使い、他は実施例と同様の原料を用いた。Comparative Example 2 Fused silica D (Tatsumori) with a weight average particle diameter of 20 microns and a maximum particle diameter of xso microns was used in place of the silica A-C in the examples, and the other raw materials were the same as in the examples.
比較例3
重量平均粒径20ミクロン最大粒径150ミクロンの溶
融シリカD(龍森)を実施例中のシリカA−Cの替わり
に使い、実施例中の合成ゴムは一切添加せずに、他は実
施例と同様の原料を用いた。Comparative Example 3 Fused silica D (Tatsumori) with a weight average particle size of 20 microns and a maximum particle size of 150 microns was used in place of the silica A-C in the examples, and the synthetic rubber in the examples was not added at all. The same raw materials as in the examples were used.
*1.16 pin DIPを成形した時のリードビン
上のパリ発生程度で判定タイバ一部までの距離のh以下
の時A、2,1,6の時B、局〜−の時C1h以上(タ
イバーを超えた)Do
*2、アルミ模擬素子を封止した1 6 pin DI
Pを280℃の半田槽に5秒間浸漬させ、その後135
℃、100%RHの条件で500hr保管しアルミ腐食
による不良数/総数で判定。*1.16 pin When molding DIP, determine the degree of paris on the lead bin when the distance to a part of the tie bar is less than h: A, 2, 1, 6: B, station ~ -: C1h or more (tie bar) ) Do *2, 1 6 pin DI with aluminum simulated element sealed
P was immersed in a solder bath at 280°C for 5 seconds, and then heated to 135°C.
Stored for 500 hours at ℃ and 100% RH, and judged based on the number of defects due to aluminum corrosion/total number.
Claims (1)
クロン以下のシリカを充填材として用い、分子内にエポ
キシ基を2つ以上含有する合成ゴムを0.1〜20重量
%含有することを特徴とする半導体封止用エポキシ樹脂
組成物。It is characterized by using silica with a weight average particle size of 15 microns or less and a maximum particle size of 100 microns or less as a filler, and containing 0.1 to 20% by weight of synthetic rubber containing two or more epoxy groups in the molecule. An epoxy resin composition for semiconductor encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60220232A JPS6281446A (en) | 1985-10-04 | 1985-10-04 | Epoxy resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60220232A JPS6281446A (en) | 1985-10-04 | 1985-10-04 | Epoxy resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6281446A true JPS6281446A (en) | 1987-04-14 |
Family
ID=16747954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60220232A Pending JPS6281446A (en) | 1985-10-04 | 1985-10-04 | Epoxy resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6281446A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6487616A (en) * | 1987-09-28 | 1989-03-31 | Toray Industries | Resin composition for sealing semiconductor |
| JPH01206656A (en) * | 1988-02-15 | 1989-08-18 | Nitto Denko Corp | Semiconductor device |
| JPH0299552A (en) * | 1988-10-06 | 1990-04-11 | Toray Ind Inc | Epoxy resin composition |
| JPH02173155A (en) * | 1988-12-27 | 1990-07-04 | Toray Ind Inc | Epoxy-containing composition |
| JPH05132609A (en) * | 1991-11-11 | 1993-05-28 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554952A (en) * | 1978-06-28 | 1980-01-14 | Toshiba Corp | Semiconductor device |
| JPS58174416A (en) * | 1982-04-07 | 1983-10-13 | Toshiba Corp | Epoxy resin composition for sealing of semiconductor |
-
1985
- 1985-10-04 JP JP60220232A patent/JPS6281446A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS554952A (en) * | 1978-06-28 | 1980-01-14 | Toshiba Corp | Semiconductor device |
| JPS58174416A (en) * | 1982-04-07 | 1983-10-13 | Toshiba Corp | Epoxy resin composition for sealing of semiconductor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6487616A (en) * | 1987-09-28 | 1989-03-31 | Toray Industries | Resin composition for sealing semiconductor |
| JPH01206656A (en) * | 1988-02-15 | 1989-08-18 | Nitto Denko Corp | Semiconductor device |
| JPH0299552A (en) * | 1988-10-06 | 1990-04-11 | Toray Ind Inc | Epoxy resin composition |
| JPH02173155A (en) * | 1988-12-27 | 1990-07-04 | Toray Ind Inc | Epoxy-containing composition |
| JPH05132609A (en) * | 1991-11-11 | 1993-05-28 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
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