JPS6281702A - silicide resistance material - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a silicide-glass based silicide resistance material which is a glazed resistance material and which can be formed in a non-oxidizing atmosphere with a base metal electrode.

BACKGROUND OF THE INVENTION In recent years, the demand for electronic devices to be smaller and more multifunctional has been increasing year by year. In order to meet this demand, high-density packaging of circuit components has become an important technology as well as the use of ICs for electronic circuits. In particular, passive components such as resistors and capacitors have shifted to thick-film elements for both ease of board mounting and miniaturization.

Conventional thick film resistors are generally made of alumina (Alz03
) A noble metal conductor such as silver (Ag), palladium (Pd), or gold (Au) is fired in air to form an electrode on a sintered alumina substrate whose main component is a noble metal oxide. A glazed resistor made of certain rutinium oxide (RuOz) and lead silicate glass was obtained by firing in air. (For example, "Thick Film IC Technology J, edited by Japan Microelectronics Association, published by Kogyo Kenkyukai, pp. 26-3.
(Page 4) However, in the above configuration, not only is the electrode and the resistor made of noble metal materials, which makes them expensive, but also the electrode part is coated with Nisokel (Nisokel) to prevent Ag solder and migration. There was a problem that it took time and effort to apply plating such as Ni).
Base metal materials that are inexpensive, have low migration, and are suitable for electrodes generally cannot be metalized in air, and conversely, when fired in a non-oxidizing atmosphere that can metalize base metals, the reduction reaction of RII02 is Therefore, a RuO□-based glaze resistance film cannot be formed.

In place of such a thick film resistor system in which precious metals are fired in air, a silicide-glass based thick film resistor has been proposed that uses a base metal material such as copper as an electrode and can be fired in a non-oxidizing atmosphere. (Japanese Unexamined Patent Publication No. 153702/1983).

It is true that this configuration is inexpensive because base metals are used for both electrodes and resistor materials, and base metals such as Cu have excellent advantages such as easy soldering and resistance to migration. The physical properties of this material are as good as those of the RuO□ system.

Problems to be Solved by the Invention However, although the above-mentioned resistors are satisfactory in terms of basic characteristics, the large initial dispersion of resistance values leaves a great deal of anxiety in practical use. In particular, although resistive films have the same sheet resistance (Rs), Rs differs depending on the aspect ratio of the resistive film, which is a major obstacle in designing the resistance value. When the resistive film was analyzed using X-rays, it is assumed that this is because an unnecessary reaction occurs at the interface between the electrode and the resistor during firing, and variations in resistance occur due to changes in the resistance of this reaction layer.

As described above, the actual situation is that conventional silicide-glass based glaze resistors have been difficult to put into practical use due to the instability of their initial resistance.

The present invention solves the above problems and provides an inexpensive and stable silicide resistance material that uses a base metal conductor as an electrode and can be formed in a non-oxidizing atmosphere.

Means for Solving the Problems In order to solve the above problems, the present invention is composed of a silicide conductor and glass, and the glass contains 2 to 30% by weight of Mez05 in the form of an oxide of a pentavalent metal. .

Function: In the silicide resistance material of the present invention, the pentavalent metal oxide Me2O5 is contained in the glass to suppress the chemical reaction between the base metal such as Cu, which is the electrode, and the glass, or between the base metal and the silicide. Therefore, a reaction layer is not generated at the interface between the resistive film and the electrode film after firing, and a resistive film without dependence on film shape can be obtained.

EXAMPLE Hereinafter, an example of the silicide resistance material of the present invention will be described with reference to the drawings.

[Example 1] First, silicon and each metal were heated to 1200 to 1400 in Ar gas.
Molybdenum silicide (MoSiz), reacted at a temperature of ℃
Tungsten silicide (WSiz), Tantalum silicide (
T aSix), niobium silicide (NbSiz), manganese silicide (MnSi2), titanium silicide (TiSiz), zircon silicide (ZrSiz), aluminum silicide (AISiz),
Iron silicide (FeSiz), chromium silicide (CrSjz) 1,
cobal silicide) (CoSiz), nickel silicide (NiS)
iz) and magnesium silicide (MgzSi) were obtained and wet-pulverized in a milling solvent to obtain silicide powder.

On the other hand, as glass components, BaO1B, 03, MgO,
Glass lift from SiO□ and 5b20 for this
A glass component mixed powder was prepared by adding 2 to 30% by weight of oxide powder of one or more of 1, N b 205 and Ta 20 s and mixing well.

The silicide powder and the glass component mixed powder were kneaded together with a vehicle containing 10% acrylic binder dissolved in turpentine oil so that the silicide powder was 5 to 50% by weight based on the total amount of the silicide powder to form a resistance paste. This paste was screen printed on an alumina substrate metallized with a base metal conductor such as copper as an electrode, and after drying at 120°C for 110 minutes, the paste was dried at a maximum temperature of 850-950°C and either N2 alone or a mixture of N2 and N2 was applied. The mixture was fired through a continuous belt kept in a non-oxidizing atmosphere of gas. Distance between electrodes at this time (L)
varies every 0.5ms from 0.5 to 101m,
Further, the resistor width was kept constant at 11 m.

Sheet resistance R,s (Ω/mouth) Rs-Ro of these resistors
/L, temperature change rate T of resistance at 20°C and 125°C
CP (ppm/”C), current noise N (dB)
, 500 (m W / Tsururi) was investigated for the resistance change rate ΔR (%) when applied for 5 seconds. Also, in order to clarify the influence of the electrode interface on Rs, L = 10 mm.
The ratio (AR) of the area resistance R1° when L = 0.5 mm and the area resistance R0,5 when L = 0.5 mm was taken and plotted 8 times.

A R = Ro, s/R+.

Table 1 shows the material composition of the resistor obtained in Example 1 and typical resistor characteristics Rs, TCR, and AR. From the same table, it can be seen that the AR is extremely small by adding MezO6, regardless of the difference in the composition of the silicide. ” [Example 2] In addition to the same glass lift as in Example 1, Sb2O2, N
A glass frit mixture containing part or all of an oxide of bzOs, Ta205 or higher, and the remaining oxide powder added so that the total oxide component is 2 to 30% by weight. I prepared the powder.

5 to 50% by weight of the silicide powder used in Example 1 was kneaded with the vehicle to form a resistance paste, and a resistor was obtained and evaluated in the same manner as in Example 1.

[Comparative example]

In order to clarify the effects of the present invention, in Example 1.2, when one or more of 5bzOs, NbzOs, and Tag's was contained in an amount less than 2% by weight or more than 30% by weight based on the glass. A resistor was prepared and evaluated using the same procedure as in the example.

Table 1 continued It can be seen that Table 1 continued is preferable. This is because if M e205 is less than 2% by weight, the reaction layer with the base metal electrode cannot be suppressed, whereas if it exceeds 30% by weight, the resistor film becomes porous, which adversely affects the resistor characteristics. It is to give.

In addition, in the examples, (BaO-B, 0
3-3, O□) type material was used, but it is not limited to this as long as it does not cause a significant reaction with base metals such as Cu at high temperatures in a non-oxidizing atmosphere and can form a stable resistive film. .

Effects of the Invention As described above, the silicide resistance material of the present invention is composed of a silicide conductor and glass, and contains a pentavalent metal in the form of oxide M in the glass.
By adding 2 to 30% by weight of e z O5 (M e is Sb, Nb, Ta) to the glass, unnecessary reactions with base metal electrodes can be suppressed and a resistor with small dependence on film shape can be created. You can get it.

[Brief explanation of drawings]

FIG. 1 is a characteristic diagram showing the relationship between the distance between electrodes and the sheet resistance Rs, and FIG. 2 is a characteristic diagram showing the relationship between the Memos concentration in glass and AR. a: Characteristics of Example, b: Characteristics of Comparative Example. Name of agent Patent attorney Toshio Nakao 1 person Figure 1

Claims (2)

[Claims] (1) Consisting of silicide and glass, the pentavalent metal is converted into the form of metal oxide Me_2O_5 with respect to the glass.
A silicide resistance material comprising ~30% by weight. (2) The silicide is molybdenum silicide, tungsten silicide,
Claim No. 1, characterized in that it is one or more of tantalum silicide, niobium silicide, manganese silicide, titanium silicide, zirconium silicide, aluminum silicide, iron silicide, chromium silicide, cobalt silicide, nickel silicide, and magnesium silicide ( The silicide resistance material described in item 1).