JPS6283877U - - Google Patents
Info
- Publication number
- JPS6283877U JPS6283877U JP16567685U JP16567685U JPS6283877U JP S6283877 U JPS6283877 U JP S6283877U JP 16567685 U JP16567685 U JP 16567685U JP 16567685 U JP16567685 U JP 16567685U JP S6283877 U JPS6283877 U JP S6283877U
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- heater
- heating
- single crystal
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の単結晶育成装置の実施例のブ
ロツク図である。
なお、１：るつぼ、５：主加熱ヒータ、６，７
：補助ヒータ、８，９，１０：温度感知器。
FIG. 1 is a block diagram of an embodiment of the single crystal growth apparatus of the present invention. In addition, 1: crucible, 5: main heater, 6, 7
: Auxiliary heater, 8, 9, 10: Temperature sensor.
Claims (1)
るつぼ１の側壁に添設された温度検知器８で検知
された温度で前記加熱ヒータの加熱が制御される
単結晶育成装置において、主加熱ヒータ５と複数
個の補助加熱ヒータ６，７を設けるとともにそれ
ぞれの加熱温度を検知する温度感知器８，９，１
０の温度で作動し加熱を制御する自動温度調節器
ＡＴ１，ＡＴ２，ＡＴ３をを設け、且つ前記全自
動温度調節器ＡＴ１，ＡＴ２，ＡＴ３を一括総合
して制御するプログラマＰＧを設けてなる単結晶
育成装置。 In a single crystal growth apparatus in which the heating of the heater is controlled by the temperature detected by a temperature detector 8 attached to the side wall of the crucible 1 that melts the crystal raw material heated by the heater 5, the main heater 5 and a plurality of auxiliary heaters 6, 7, and temperature sensors 8, 9, 1 for detecting the respective heating temperatures.
A programmer PG which is provided with automatic temperature controllers AT 1 , AT 2 , AT 3 that operate at a temperature of 0 and controls heating, and which collectively controls the fully automatic temperature controllers AT 1 , AT 2 , AT 3 . A single crystal growth device equipped with
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16567685U JPS6283877U (en) | 1985-10-30 | 1985-10-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16567685U JPS6283877U (en) | 1985-10-30 | 1985-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6283877U true JPS6283877U (en) | 1987-05-28 |
Family
ID=31095926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16567685U Pending JPS6283877U (en) | 1985-10-30 | 1985-10-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6283877U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0380181A (en) * | 1989-08-24 | 1991-04-04 | Mitsubishi Monsanto Chem Co | Device for producing single crystal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59137399A (en) * | 1983-01-28 | 1984-08-07 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus of growing low-dislocation density single crystal |
| JPS6027685A (en) * | 1983-07-19 | 1985-02-12 | Sumitomo Electric Ind Ltd | Method for controlling multistage heater |
-
1985
- 1985-10-30 JP JP16567685U patent/JPS6283877U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59137399A (en) * | 1983-01-28 | 1984-08-07 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus of growing low-dislocation density single crystal |
| JPS6027685A (en) * | 1983-07-19 | 1985-02-12 | Sumitomo Electric Ind Ltd | Method for controlling multistage heater |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0380181A (en) * | 1989-08-24 | 1991-04-04 | Mitsubishi Monsanto Chem Co | Device for producing single crystal |