JPS6286716U - - Google Patents
Info
- Publication number
- JPS6286716U JPS6286716U JP1985179782U JP17978285U JPS6286716U JP S6286716 U JPS6286716 U JP S6286716U JP 1985179782 U JP1985179782 U JP 1985179782U JP 17978285 U JP17978285 U JP 17978285U JP S6286716 U JPS6286716 U JP S6286716U
- Authority
- JP
- Japan
- Prior art keywords
- resonator
- transistor
- oscillator
- acoustic wave
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Pressure Sensors (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
第１Ａ図は本考案の一実施例による発振器の平
面図、第１Ｂ図〜第１Ｄ図はそれぞれ第１Ａ図の
Ｂ―Ｂ線、Ｃ―Ｃ線及びＤ―Ｄ線の拡大断面図、
第２図は第１Ａ図に示す発振器の回路図、第３図
は従来のコルピツツ発振器の回路図、第４図は共
振系を有する変形コルピツツ発振器の回路図であ
る。
なお、図面に用いた符号において、１……Ｇａ
Ａｓ基板、２ａ，２ｂ……くし歯状電極パターン
、３……表面弾性波共振子、４，５……グレーテ
イング反射器、６……表面弾性波共振器、７……
ＧａＡｓ ＦＥＴである。
FIG. 1A is a plan view of an oscillator according to an embodiment of the present invention, and FIGS. 1B to 1D are enlarged sectional views taken along line BB, line CC, and line DD in FIG. 1A, respectively.
2 is a circuit diagram of the oscillator shown in FIG. 1A, FIG. 3 is a circuit diagram of a conventional Colpitts oscillator, and FIG. 4 is a circuit diagram of a modified Colpitts oscillator having a resonance system. In addition, in the symbols used in the drawings, 1...Ga
As substrate, 2a, 2b... comb-shaped electrode pattern, 3... surface acoustic wave resonator, 4, 5... grating reflector, 6... surface acoustic wave resonator, 7...
It is a GaAs FET.
Claims (1)
振器において、 上記共振器及び上記トランジスタをＧａＡｓ基
板上に設けられた表面弾性波共振器及び電界効果
トランジスタによりそれぞれ構成したことを特徴
とする共振器。[Claims for Utility Model Registration] An oscillator comprising a resonator and a transistor, characterized in that the resonator and the transistor are respectively constructed of a surface acoustic wave resonator and a field effect transistor provided on a GaAs substrate. resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985179782U JPS6286716U (en) | 1985-11-21 | 1985-11-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985179782U JPS6286716U (en) | 1985-11-21 | 1985-11-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6286716U true JPS6286716U (en) | 1987-06-03 |
Family
ID=31123146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985179782U Pending JPS6286716U (en) | 1985-11-21 | 1985-11-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6286716U (en) |
-
1985
- 1985-11-21 JP JP1985179782U patent/JPS6286716U/ja active Pending