JPS6286907A - Crystal oscillation circuit - Google Patents

Crystal oscillation circuit

Info

Publication number
JPS6286907A
JPS6286907A JP22738485A JP22738485A JPS6286907A JP S6286907 A JPS6286907 A JP S6286907A JP 22738485 A JP22738485 A JP 22738485A JP 22738485 A JP22738485 A JP 22738485A JP S6286907 A JPS6286907 A JP S6286907A
Authority
JP
Japan
Prior art keywords
mos transistor
capacitor
oscillation circuit
transistor
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22738485A
Other languages
Japanese (ja)
Inventor
Takashi Takeuchi
隆 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Matsushima Kogyo KK
Original Assignee
Matsushima Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushima Kogyo KK filed Critical Matsushima Kogyo KK
Priority to JP22738485A priority Critical patent/JPS6286907A/en
Publication of JPS6286907A publication Critical patent/JPS6286907A/en
Pending legal-status Critical Current

Links

Landscapes

  • Oscillators With Electromechanical Resonators (AREA)

Abstract

PURPOSE:To obtain stable oscillation frequency quickly to switching of a MOS transistor by connecting a connection point of capacitors for temperature compensation and to MOS transistor that controls the capacitor and a point of fixed DC potential by the MOS transistor. CONSTITUTION:Plural capacitors C1, C2,...Cn for temperature compensation are connected to a gate terminal of a crystal oscillation circuit, and MOS transistors of N channels TN1, TN2...TNn are connected between other terminals of capacitors and ground. When change of temperature is detected by a temperature sensor 9, data 7m that makes an arbitrary capacitor Cm (m is an arbitrary natural number, m<=n) from on to off is sent correspondingly. Then, an N channel MOS transistor TNm becomes off state, and at the same time, a P channel MOS transistor TPm becomes off state, and the DC level of drain of the TNm becomes equal to that of the gate of the oscillating circuit. Therefore, capacitance of a parasitic diode by the N channel MOS transistor TNm becomes constant at once.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は温度補償水晶発振回路の発掘回路に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an excavation circuit for a temperature compensated crystal oscillation circuit.

〔発明の概要〕[Summary of the invention]

本発明は1発振回路のゲート端子、あるいはドレイン端
子とアースあるいは十電源間に直列に接続される複数の
温度補償用コンデンサと前記コンデンサをオン−オフ制
御するMOSトランジスタより構成される温度補償水晶
発振回路において、前記コンデンサと、前記MoSトラ
ンジスタの接続点と、直流電位が定1っている点とをM
OSトランジスタで接続し、そのMOEI )ランジス
タが前6己コンデンサを制御するMo8 )ランジスタ
のオン−オフ動作と逆動作し、前記コンデンサと制御す
るMo8 )ランジスタがオフ状態によってできる寄生
ダイオードの直流レベルを、ある定1つた直流レベルと
慕しくすることにより、発振周波数の安定性を向上させ
たものである。
The present invention provides a temperature-compensated crystal oscillator comprising a plurality of temperature-compensating capacitors connected in series between the gate terminal or drain terminal of an oscillator circuit and ground or a power supply, and a MOS transistor for controlling the on-off of the capacitors. In the circuit, the connection point between the capacitor and the MoS transistor and the point where the DC potential is constant are M
(Mo8) The transistor operates in the opposite direction to the on-off operation of the transistor and controls the capacitor. (Mo8) The transistor controls the DC level of the parasitic diode caused by the off state of the transistor. , the stability of the oscillation frequency is improved by maintaining a certain constant DC level.

〔従来の技術〕[Conventional technology]

従来のコンデンサによる温度補償回路を有する水晶発振
回路は45図に示す様に、水晶発振回路のゲート端子に
、温度補償用コンデンサ、C8゜C7・・・・・・0n
(nは自然数)が接続され、前記コンデンサCI m 
C2・・・・・・On に直列にMo8 トランジスタ
TN1.TN2・・・・・・TNnが接続されていて、
温度センサ9から送られた温度清報6swコントローラ
ー8において制御データ71 * 7!・・・・・・7
nに変換し、前記MoSトランジスタTNI、TN2・
・・・・・TNnを制御することによ)、温度補償を行
なっていた。
A conventional crystal oscillation circuit having a temperature compensation circuit using a capacitor has a temperature compensation capacitor, C8°C7...0n, at the gate terminal of the crystal oscillation circuit, as shown in Figure 45.
(n is a natural number) is connected, and the capacitor CI m
Mo8 transistor TN1... is connected in series to C2...On. TN2...TNn is connected,
Control data 71 * 7 in temperature report 6sw controller 8 sent from temperature sensor 9!・・・・・・7
n, and the MoS transistors TNI, TN2・
...by controlling TNn), temperature compensation was performed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、従来のコンデンサによる温度補償回路を有する
水晶発振回路は、Mo8 トランジスタTNがオフ状態
となった時、Mo8 )ランジスタの構造上寄生ダイオ
ードができてしまう。第ル図に寄生ダイオードができた
従来の回路図を示す。
However, in the conventional crystal oscillation circuit having a temperature compensation circuit using a capacitor, when the Mo8 transistor TN is turned off, a parasitic diode is created due to the structure of the Mo8 transistor. Figure 1 shows a conventional circuit diagram with a parasitic diode.

前記ダイオード10に加わる、直流レベルは、半導体の
構造によって決筐る(ト)へのリーク電流11と(−)
へのリークTt流12の比によってのみ決まるため、M
OFI )ランジスタTNがオン状態からオフ状態に切
り戻っても、コンデンサC8とダイオード10の静電容
量が、リーク電流11によっテ前記直流レベルまで充電
されるまで時間がかかり、ダイオードの静電容債がすぐ
に安定しないので、よって水晶発振回路の発振周波数が
安定しないという間21点を有していた。
The DC level applied to the diode 10 is determined by the structure of the semiconductor, and the leakage current 11 to (g) and (-)
M
OFI) Even if the transistor TN is switched back from the on state to the off state, it takes time for the capacitance of the capacitor C8 and the diode 10 to be charged to the above DC level by the leakage current 11, and the capacitance bond of the diode decreases. Since the oscillation frequency of the crystal oscillation circuit is not stable immediately, the oscillation frequency of the crystal oscillation circuit is not stable.

〔問題点を解決するための手段〕[Means for solving problems]

発振回路のゲート端子、あるいはドレイン端子とアース
あるいは十電源間に直列に接続される複数の温度補償用
コンデンサと前記コンデンサをオン−オフ制御するMo
Sトランジスタより構成される温度補償水晶発振回路に
おいて、前記コンデンサと、前記MOSトランジスタの
接続点と、直流電位が定まっている点とをMo8 トラ
ンジスタで接続し、そのMOSトランジスタi)’ 、
前記” ’テンプを制御するMoSトランジスタのオン
。オフ動作と逆動作することを特徴とする。
A plurality of temperature compensation capacitors connected in series between the gate terminal or drain terminal of the oscillation circuit and the ground or the power source, and a Mo for controlling the on-off of the capacitors.
In a temperature compensated crystal oscillator circuit composed of S transistors, a connection point between the capacitor and the MOS transistor, and a point at which a DC potential is determined are connected by an Mo8 transistor, and the MOS transistor i)',
It is characterized in that the MoS transistor that controls the balance has an on/off operation that is opposite to its on/off operation.

〔作用〕[Effect]

本発明の上記のような構成によれば、温度補償用コンデ
ンサを制御するMo8 トランジスタがオフ状態となっ
た時寄生ダイオードができるが、前記コンデンサに並列
に接続されたMo8 トランジスタがオン状態となし、
寄生ダイオードの直流レベルは、ある定まった直流レベ
ルと等しくなるため、安定な周波数が得ることができる
According to the above configuration of the present invention, a parasitic diode is formed when the Mo8 transistor that controls the temperature compensation capacitor is turned off, but the Mo8 transistor connected in parallel to the capacitor is not turned on.
Since the DC level of the parasitic diode is equal to a certain fixed DC level, a stable frequency can be obtained.

〔実施例〕〔Example〕

以下に本発明の実施例を図面にもとづいて説明する。′
XfA+図知おいて、水晶発振回路のゲート端゛子に複
数の温度補償用コンデンサC,、a、ν曲cnが接続さ
れ、前記コンデンサの他方の端子とアース間にNチャン
ネルのMo8 トランジスタTNI。
Embodiments of the present invention will be described below based on the drawings. ′
XfA+ As shown in the figure, a plurality of temperature compensation capacitors C, a, νcn are connected to the gate terminal of a crystal oscillation circuit, and an N-channel Mo8 transistor TNI is connected between the other terminal of the capacitor and ground.

TN2・・・・・・TNnが接続される。また前記コン
デ7? C,、C,・・・・・・On に並列にPチャ
ンネルMOSトランジスタTPI、TP2・・・・・・
TPnが接続される。1は帰還抵抗、2は発振インバー
タ、5は水晶振動子、4はドレイン抵抗、5はゲート容
量、6はドレイン抵抗、7,1.7.・・・・・・7n
 はM、OSトランジスタを制御する信号、8は温度に
対[6した制御データを出力するSWコントローラ、9
は温度センサーである。温度が変化したことを温度セン
サー9が感知したとすると、それに対[i;シて任意の
コンデンサCm(mは任意の自然数m≦n)がオンから
オフになるデータ(HレベルからLレベル)7mが送ら
れると、NチャンネルMOSトランジスタT Nmがオ
フ状態になると同時に、PチャンネルMOSトランジス
タTPmがオフ状態となり、TNmのドレインの直流レ
ベルは、発振回路のゲートと同じになるため、Nチャン
ネル1111OSトランジスタTNmによる寄生ダイオ
ードの静電容歓はすぐに一定となる。
TN2...TNn is connected. Also, the aforementioned Conde 7? P-channel MOS transistors TPI, TP2...... are connected in parallel to C,, C,...On.
TPn is connected. 1 is a feedback resistor, 2 is an oscillation inverter, 5 is a crystal oscillator, 4 is a drain resistor, 5 is a gate capacitance, 6 is a drain resistor, 7, 1.7.・・・・・・7n
is M, a signal that controls the OS transistor; 8 is a SW controller that outputs control data corresponding to temperature; 9
is a temperature sensor. Assuming that the temperature sensor 9 senses a change in temperature, the data that changes an arbitrary capacitor Cm (m is any natural number m≦n) from on to off (from H level to L level) When 7m is sent, the N-channel MOS transistor T Nm turns off and the P-channel MOS transistor TPm turns off at the same time, and the DC level of the drain of TNm becomes the same as the gate of the oscillation circuit, so the N-channel 1111OS The electrostatic capacitance of the parasitic diode caused by the transistor TNm quickly becomes constant.

騙2図は、不発明の他の実施例を示す。MOSトランジ
スタTPが(ト)電源に接続されており、同様の効果が
得られる。
Figure 2 shows another embodiment of the invention. The MOS transistor TP is connected to the (g) power supply, and a similar effect can be obtained.

が1図の実施例においては、TNをNチャンネルMo8
 トランジスタで、TP全PチャンネルMO8トランジ
スタで構成したが、制御信号をそれぞれ反転させること
により、TNをPチャンネルMO8トランジスタ、TP
をNチャンネルMO61トランジスタで構成しても同様
の効果が得られる第1図の実施例では、温度補償用コン
デンサが発振回路のゲート側に接続されていたが、発振
回路のドレイン側に接続した場合でも同様の効果が得ら
れる。
In the embodiment shown in FIG. 1, the TN is N channel Mo8
The transistors are configured with TP and P-channel MO8 transistors, but by inverting the control signals, TN can be replaced with P-channel MO8 transistors and TP.
In the embodiment shown in Figure 1, the temperature compensation capacitor is connected to the gate side of the oscillation circuit, but if it is connected to the drain side of the oscillation circuit, But you can get the same effect.

〔発明の効果〕〔Effect of the invention〕

以上述べた様に、本発明は温度補償用のコンデンサと前
記コンデンサを制御するMOSトランジスタの接続点と
、直流電位が定っている点とをMOSトランジスタで接
続する構造にしたので、温度補償用コンデンサを制御す
るMOSトランジスタがオフ状態となった時にできる寄
生ダイオードの直流レベルがすぐに一定となシ、前記M
OSトランジスタのスイッチングに対して、すばやく安
定な発振周波数が得られるという効果がある。
As described above, the present invention has a structure in which the connection point of a temperature compensation capacitor and a MOS transistor that controls the capacitor is connected by a MOS transistor to a point where a DC potential is fixed. When the MOS transistor that controls the capacitor is turned off, the DC level of the parasitic diode that is created immediately becomes constant.
This has the effect of quickly providing a stable oscillation frequency for the switching of the OS transistor.

第\図は従来の温度補償水晶発振回路図。Figure \ is a diagram of a conventional temperature compensated crystal oscillation circuit.

午 第\図は、寄生タイオードができた従来の回路。   
図。
Figure 1 shows a conventional circuit with a parasitic diode.
figure.

1・・・帰遣抵抗 2・・・発振インバータ 5・・・水晶振動子 4・・・ドレイン抵抗 5・・・ゲート容量 6、・・・ドレイン容量 71 e 7t・・・・・・7n  ・・・制御信号C
,、O,・・・・・・On ・・・温度補償用コンデン
サTPI、TP2・・・・・・TPn・・・Pチャンネ
ルMOSトランジスタ TNI、TN2・・・・・・TNn・・・Nチャンネル
MO8トランジスタ 以   上
1...Returning resistance 2...Oscillating inverter 5...Crystal oscillator 4...Drain resistance 5...Gate capacitance 6,...Drain capacitance 71 e 7t...7n ・...Control signal C
,,O,...On...Temperature compensation capacitor TPI, TP2...TPn...P channel MOS transistor TNI, TN2...TNn...N channel MO8 transistor or more

Claims (1)

【特許請求の範囲】[Claims] 発振回路のゲート端子、あるいはドレイン端子とアース
あるいは+電源間に、直列に接続される少なくとも1つ
の温度補償用コンデンサと前記コンデンサをオン、オフ
制御するMOSトランジスタより構成されるCMOS構
造の水晶発振回路において、前記コンデンサと、前記M
OSトランジスタの接続点と、直流電位が定まつている
点とをMOSトランジスタで接続し、前記直流電位が定
まつている点と接続されるMOSトランジスタが前記コ
ンデンサを制御するMOSトランジスタのオン、オフ動
作と逆動作することを特徴とする水晶発振回路。
A CMOS crystal oscillation circuit comprising at least one temperature compensation capacitor connected in series between the gate terminal or drain terminal of the oscillation circuit and the ground or + power supply, and a MOS transistor for controlling the capacitor on and off. , the capacitor and the M
A MOS transistor connects the connection point of the OS transistor and a point where the DC potential is fixed, and the MOS transistor connected to the point where the DC potential is fixed turns on and off the MOS transistor that controls the capacitor. A crystal oscillation circuit characterized by operating in the opposite direction.
JP22738485A 1985-10-11 1985-10-11 Crystal oscillation circuit Pending JPS6286907A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22738485A JPS6286907A (en) 1985-10-11 1985-10-11 Crystal oscillation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22738485A JPS6286907A (en) 1985-10-11 1985-10-11 Crystal oscillation circuit

Publications (1)

Publication Number Publication Date
JPS6286907A true JPS6286907A (en) 1987-04-21

Family

ID=16859968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22738485A Pending JPS6286907A (en) 1985-10-11 1985-10-11 Crystal oscillation circuit

Country Status (1)

Country Link
JP (1) JPS6286907A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005529536A (en) * 2002-06-10 2005-09-29 ジーシーティー セミコンダクター インコーポレイテッド LC oscillator with wide tuning range and low phase noise
JP2007228339A (en) * 2006-02-24 2007-09-06 Renesas Technology Corp Semiconductor integrated circuit for communication with built-in oscillation circuit
JP2008085857A (en) * 2006-09-28 2008-04-10 Mitsumi Electric Co Ltd Voltage controlled oscillator
JP2008098731A (en) * 2006-10-06 2008-04-24 Niigata Seimitsu Kk Voltage controlled oscillator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005529536A (en) * 2002-06-10 2005-09-29 ジーシーティー セミコンダクター インコーポレイテッド LC oscillator with wide tuning range and low phase noise
JP2007228339A (en) * 2006-02-24 2007-09-06 Renesas Technology Corp Semiconductor integrated circuit for communication with built-in oscillation circuit
JP2008085857A (en) * 2006-09-28 2008-04-10 Mitsumi Electric Co Ltd Voltage controlled oscillator
JP2008098731A (en) * 2006-10-06 2008-04-24 Niigata Seimitsu Kk Voltage controlled oscillator

Similar Documents

Publication Publication Date Title
US4891609A (en) Ring oscillator
US4307354A (en) Crystal oscillator circuit having rapid starting characteristics and a low power consumption
KR19990045290A (en) Oscillation circuit
JPS61212907A (en) Semiconductor integrated circuit
US3889211A (en) MOS field effect transistor crystal oscillator
JPS6259924B2 (en)
JPH0261810B2 (en)
JP2002185279A (en) Amplitude controlling alternating signal produced by electronic device such as oscillator circuit
GB2084421A (en) Oscillator Circuit With Low Current Consumption
JP3308393B2 (en) Voltage controlled oscillator
US4146849A (en) Voltage controlled oscillator
JPH0983344A (en) Inverter circuit
JPS6230410A (en) Voltage controlled oscillation circuit
JP2021083054A (en) Oscillation circuit
JPH0543526Y2 (en)
JP2003023323A (en) Resistance control circuit for mosfet and time constant control circuit using the same
JP2005033329A (en) Temperature compensated piezoelectric oscillator
JPH066136A (en) Piezoelectric oscillation circuit
JPH0533055Y2 (en)
JPS5986326A (en) Oscillating circuit
JPS6316167Y2 (en)
JPS63252004A (en) crystal oscillation circuit
JP2524399B2 (en) Crystal oscillator circuit
JPS63306710A (en) Fet multivibrator circuit
JPH0533056Y2 (en)