JPS6287491A - Ruby single crystal manufacturing method - Google Patents
Ruby single crystal manufacturing methodInfo
- Publication number
- JPS6287491A JPS6287491A JP22738185A JP22738185A JPS6287491A JP S6287491 A JPS6287491 A JP S6287491A JP 22738185 A JP22738185 A JP 22738185A JP 22738185 A JP22738185 A JP 22738185A JP S6287491 A JPS6287491 A JP S6287491A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- raw material
- material rod
- chromium oxide
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 239000010979 ruby Substances 0.000 title claims abstract description 13
- 229910001750 ruby Inorganic materials 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 15
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 4
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 150000002367 halogens Chemical class 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 4
- 238000004040 coloring Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、集光フローティングゾーン法による結晶合成
におけるルビー単結晶の製造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to the production of ruby single crystals in crystal synthesis by the light-concentrating floating zone method.
本発明は、集光７０−ティングゾーン法によるルビー単
結晶の製造におｈで、原料棒の先端部分の酸化クロムの
濃度を高め、後部濃度を低くすることにより気泡を含有
しない良質のルビー単結晶を時間当り２ ｗｘ −ｕ
ｗで製造すること全可能にしたものである。The present invention is capable of manufacturing ruby single crystals using the condensing 70-toning zone method. By increasing the concentration of chromium oxide at the tip of the raw material rod and lowering the concentration at the rear, high-quality ruby single crystals containing no bubbles are produced. 2 wx −u of crystals per hour
This makes it possible to manufacture the product using w.
従来のルビー単結晶製造方法では、特願昭５９−９５１
４５などのように育成速度が時間当り２Ｕ未満でのみ、
気泡を含有しない結晶が製造できた。In the conventional ruby single crystal production method, the patent application No. 59-951
Only when the growth rate is less than 2U per hour, such as 45,
Crystals containing no bubbles could be produced.
〔発明が解決しようとする問題点及び目的〕しかし上ｈ
ピ従米技術の製造方法では、育成速度が時間当り２ｕ以
上では気泡を含有してしまうという問題点があった。[Problem and purpose to be solved by the invention] However, h.
In the manufacturing method of the Pijumai technology, there was a problem that air bubbles were contained when the growth rate was 2 U per hour or more.
本発明は、この様な間唾点を解決するもので、その目的
とすることは、気泡を含有し、ない良質のルビー単結晶
を提供することにある。The present invention is intended to solve this problem, and its purpose is to provide a high-quality ruby single crystal that does not contain bubbles.
本発明のルビー単結晶製造方法は、原料棒の先端部分の
酸化クロム＃に度を高め、段部濃度を低くすること全特
徴とする。この時の先端部分の酸化クロム濃度は、７ｗ
％〜ｌυＷ％とする。この場合７ｗ％未満では着色が薄
（，１（１ｗ％より高濃度の場合は、偏析するため不適
である。又、先端ｔは０．３２〜０．５２とし、０．３
２未満では着色が薄く、０．５２より多い場合は偏析す
るため不適である。The ruby single crystal manufacturing method of the present invention is characterized by increasing the concentration of chromium oxide # at the tip of the raw material rod and lowering the concentration at the step. At this time, the chromium oxide concentration at the tip is 7w.
%~lυW%. In this case, if the concentration is less than 7 w%, the coloring will be light (,1 (if the concentration is higher than 1 w%, it will be unsuitable because it will segregate. Also, the tip t should be 0.32 to 0.52, and 0.3
If it is less than 2, the coloring will be weak, and if it is more than 0.52, it will be unsuitable because it will segregate.
又、後部濃度は０．２ｗ％〜０．５１１＄とし、０ 、
２ｗ９６未満では、着色が薄く、０．５ｗチより高濃度
では気泡が発生するため不適である。Also, the rear concentration is 0.2w% ~ 0.511$, and 0,
If the concentration is less than 2w96, the coloring will be weak, and if the concentration is higher than 0.5w, bubbles will be generated, which is unsuitable.
以下、本発明につ＾て、実施列に基づき詳細に説明する
。Hereinafter, the present invention will be described in detail based on implementation sequences.
（１）原料棒作成
嬉１表は、本発明に使用した原料棒の先端組成先端級、
後部組成と示したものである。(1) Raw material rod preparation table 1 shows the tip composition of the raw material rod used in the present invention,
This is shown as the rear composition.
第１衣に示す組成の原料粉末を乳ばちに秤り取り、十分
混合する１次に前記先端部分の原料粉末を第１衆に示す
址だけ秤り取り、φ１ＯＩｕＩのゴムチューブに入れ、
詰める。この上へ後部原料粉末を入れ、長さ１００ｍま
で詰める１次にチューブ内の空気抜きを行なう１次にラ
バープレスにより１ｔ ／ ６ｎ”の圧力で成型する。Weigh out the raw material powder with the composition shown in the first batter into a mortar and mix thoroughly.First, weigh out the raw material powder at the tip in the amount shown in the first batter and put it into a φ1 OIuI rubber tube.
pack. The rear raw material powder is put on top of this, and the tube is packed to a length of 100 m.The first step is to remove air from inside the tube.The first step is to mold the tube at a pressure of 1t/6n'' using a rubber press.
ξれを電気炉で１６００℃で４時間焼結を行う。ξ is sintered in an electric furnace at 1600°C for 4 hours.
（２）結晶育成
第２表は、本発明の成長速度以外の育成条件を示したも
のである。第３衣は本発明における原料棒ＮＱ及び成長
速度、育成結果を示したものである。(2) Crystal growth Table 2 shows the growth conditions other than the growth rate of the present invention. The third item shows the raw material rod NQ, growth rate, and growth results in the present invention.
＠１図に示した装置を用いて、第２表及び哨３表の条件
により結晶を育成した。Using the apparatus shown in Figure @1, crystals were grown under the conditions shown in Tables 2 and 3.
（３）結果
第３表に示すようにｈづれの場合も気泡を含有しない良
質のルビー単結晶が育成できた。(3) Results As shown in Table 3, high-quality ruby single crystals containing no bubbles could be grown even in the case of h deviation.
哨 １ 表
鎗 ２ 表
慎３表
〔発明の効果〕
以上述べたように、本発明によれば集光フローティング
ゾーン法による結晶合成において、原料棒の先端部分の
酸化クロム濃度を高め、後部濃度を低くすることにより
気泡を含有しなｉ良質なルビー学結晶′ｆｌ：製＠する
ことが可能になった。Table 1 Table 1 Table 2 Table 3 [Effects of the invention] As described above, according to the present invention, in crystal synthesis by the light-concentrating floating zone method, the concentration of chromium oxide at the tip of the raw material rod is increased and the concentration at the rear is increased. By lowering the value, it became possible to produce high-quality ruby crystals without containing bubbles.
＠１図は、本発明に使用した赤外線集中加熱単結晶製造
装置の概略図である。
に回転楕円面鏡 ６：原料棒
２：ハロゲンランプ ７：種結晶
３：石英管 ８：融帯
４：雰囲気ガス導入口 ９：上主軸
５：雰囲気ガス出口 ｌＯ：下主軸
以 上Figure @1 is a schematic diagram of the infrared concentrated heating single crystal manufacturing apparatus used in the present invention. 6: Raw material rod 2: Halogen lamp 7: Seed crystal 3: Quartz tube 8: Melting zone 4: Atmospheric gas inlet 9: Upper main shaft 5: Atmospheric gas outlet 1O: Lower main shaft and above
Claims (1)
料棒の先端部分の酸化クロム濃度を高め、後部濃度を低
くすることを特徴とするルビー単結晶製造方法。A ruby single crystal manufacturing method characterized by increasing the chromium oxide concentration at the tip of a raw material rod and lowering the rear concentration in crystal synthesis using a light-concentrating floating zone method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22738185A JPS6287491A (en) | 1985-10-11 | 1985-10-11 | Ruby single crystal manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22738185A JPS6287491A (en) | 1985-10-11 | 1985-10-11 | Ruby single crystal manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6287491A true JPS6287491A (en) | 1987-04-21 |
Family
ID=16859917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22738185A Pending JPS6287491A (en) | 1985-10-11 | 1985-10-11 | Ruby single crystal manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6287491A (en) |
-
1985
- 1985-10-11 JP JP22738185A patent/JPS6287491A/en active Pending
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