JPS6288328A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6288328A JPS6288328A JP23021385A JP23021385A JPS6288328A JP S6288328 A JPS6288328 A JP S6288328A JP 23021385 A JP23021385 A JP 23021385A JP 23021385 A JP23021385 A JP 23021385A JP S6288328 A JPS6288328 A JP S6288328A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- heating
- substrate
- semiconductor device
- several tens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000012298 atmosphere Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 3
- 150000002367 halogens Chemical class 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000002955 isolation Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造方法に関１〜、特に薄い酸
化膜を有する半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for manufacturing a semiconductor device having a thin oxide film.
従来、半導体装置を実現するあたり、シリコン基板表面
に酸化膜を形成するには、電気炉を用いて酸化性雰囲気
中で数十分間熱処理する方法が用いられている。Conventionally, in order to form an oxide film on the surface of a silicon substrate in realizing a semiconductor device, a method has been used in which heat treatment is performed in an oxidizing atmosphere for several minutes using an electric furnace.
〔発明が解決１−ようとする問題点〕
上述した従来の電気炉を用いた方法では、単時間熱処理
が困難なため。数十又という薄い酸化膜が制御よく形成
できない。[Problems to be solved by the invention (1)] In the method using the conventional electric furnace described above, it is difficult to perform heat treatment for a single time. A thin oxide film with tens of strands cannot be formed in a well-controlled manner.
また、従来法では、窒素雰囲気中で炉に入れるため、素
子分離領域にシリコンガラス膜が埋込まれているデバイ
スでは、炉に挿入中リンやボロンがアウト・ディフュー
ジョンし、基板に入り込むという欠点がある。基板に入
り込んだリンやボロンにより、基板濃度が変化１．、Ｍ
ＯＳ）ランジスタを形成する場合には、スレッショルド
電圧が変動する恐れがある。リンやボロンの基板への侵
入を防ぐために、酸化性雰囲気中で炉に挿入する場合で
も、従来法では、酸化膜厚が制御できないという欠点が
ある。In addition, in the conventional method, devices with a silicon glass film embedded in the isolation region have the disadvantage that phosphorus and boron diffuse out and enter the substrate during insertion into the furnace, since the conventional method is placed in a furnace in a nitrogen atmosphere. be. The substrate concentration changes due to phosphorus and boron that have entered the substrate.1. ,M
OS) When forming a transistor, the threshold voltage may vary. Even when the substrate is inserted into a furnace in an oxidizing atmosphere to prevent phosphorus and boron from entering the substrate, the conventional method has the disadvantage that the oxide film thickness cannot be controlled.
本発明は、上記のような問題点を解決しようとするもの
である。The present invention aims to solve the above problems.
本発明は、８００℃以上の温度で数秒〜数分間、酸化性
雰囲気中で、光を用いて加熱し、数十ｎｍ以下の酸化膜
を形成する工程を有する。The present invention includes a step of heating with light in an oxidizing atmosphere for several seconds to several minutes at a temperature of 800° C. or higher to form an oxide film with a thickness of several tens of nanometers or less.
本発明は、酸化性雰囲気中での短時間加熱によシ、酸化
膜の一部または全部を形成する。数秒〜数十秒という短
時間加熱のため、数十ｎｍ以下の酸化膜を制御よく形成
することができる。また、素子分離領域にシリコンガラ
ス膜（ＢＰＳＧあるいはＰＳＧ）を埋込んだトレンチ分
離に対しても、酸化性雰囲気中で短時間加熱による熱処
理を行えば、シリコンガラス膜中のリンやボロンがアウ
ト・ディフュージョンし基板に入り込むよりも速く、酸
化膜の少くとも一部が再現性よく形成でき、リンやボロ
ンの基板への侵入を防ぐことができる。In the present invention, part or all of the oxide film is formed by short-time heating in an oxidizing atmosphere. Because of the short heating time of several seconds to several tens of seconds, an oxide film of several tens of nanometers or less can be formed with good control. Furthermore, even for trench isolation in which a silicon glass film (BPSG or PSG) is buried in the element isolation region, phosphorus and boron in the silicon glass film can be removed by heat treatment using short-term heating in an oxidizing atmosphere. Faster than diffusion and entering the substrate, at least a portion of the oxide film can be formed with good reproducibility, and it is possible to prevent phosphorus and boron from entering the substrate.
〔実施例〕 次に、本発明の実施例を示す。〔Example〕 Next, examples of the present invention will be shown.
以下の説明では、本発明をＭＯＳデバイスに適用した場
合について述べるが、他の半導体装置に適用できること
はいう壕でもない。In the following description, a case will be described in which the present invention is applied to a MOS device, but it is not implied that the present invention can be applied to other semiconductor devices.
（実施例１）
第１図に本発明の第一の実施例を示す。単結晶シリコン
基板１に、フィールド酸化膜２を形成したのち、酸化性
雰囲気中で、数秒〜数十秒の間８００℃〜１２００℃の
加熱を行う。これは、たとえば酸素ガス中でのハロゲン
ランプ加熱により行えばよく、この方法により、数十又
と薄いゲート酸化膜３が制御よく形成できる。以下、ゲ
ート電極を形成し、通常のプロセスを用いることにより
、ＭＯＳデバイスを製造することができる。(Example 1) FIG. 1 shows a first example of the present invention. After forming a field oxide film 2 on a single crystal silicon substrate 1, heating is performed at 800° C. to 1200° C. for several seconds to several tens of seconds in an oxidizing atmosphere. This can be done, for example, by heating with a halogen lamp in oxygen gas, and by this method, gate oxide film 3 as thin as several tens of layers can be formed with good control. Thereafter, a MOS device can be manufactured by forming a gate electrode and using a normal process.
（実施例２）
第２図に本発明の第二の実施例を示す。素子分離領域に
シリコンガラス膜４を埋込んだのち、上記と同様に酸化
性雰囲気中で数秒〜数十秒の加熱を行い、薄いゲート酸
化膜５を形成する。この工程は常に酸化性雰囲気中で行
なわれるためシリコン基板表面は、薄い酸化膜が形成さ
れ、シリコンガラス膜からアウト・ディフュージョンし
たリンやボロンの基板への侵入を防ぐことができる。(Example 2) FIG. 2 shows a second example of the present invention. After silicon glass film 4 is embedded in the element isolation region, heating is performed for several seconds to several tens of seconds in an oxidizing atmosphere in the same manner as described above to form a thin gate oxide film 5. Since this step is always carried out in an oxidizing atmosphere, a thin oxide film is formed on the surface of the silicon substrate, which prevents phosphorus and boron diffused from the silicon glass film from entering the substrate.
（実施例３）
第３図に本発明の第三の実施例を示す。素子分離領域に
シリコンガラス膜６を埋込んだのち、酸化性雰囲気中で
、数秒〜数十秒の加熱を行い、薄いゲート酸化膜７を形
成したのち、従来法の電気炉を用いて酸化膜８を形成す
る。従来法により酸化膜を形成する前に、短時間酸化に
より薄い酸化膜を形成しているため、シリコンガラス膜
からアウト・ディフュージョンしたリンやボロンの基板
への侵入を防ぐことができ、比較的厚いゲート酸化膜も
形成することができる。(Embodiment 3) FIG. 3 shows a third embodiment of the present invention. After embedding the silicon glass film 6 in the element isolation region, heating is performed for several seconds to several tens of seconds in an oxidizing atmosphere to form a thin gate oxide film 7, and then the oxide film is removed using a conventional electric furnace. form 8. Before forming an oxide film using the conventional method, a thin oxide film is formed by short-time oxidation, which prevents phosphorus and boron that have diffused out from the silicon glass film from entering the substrate. A gate oxide film can also be formed.
以上説明したように本発明は、８００℃以上の温度で数
秒〜数分間酸化性雰囲気中で、光を用いて加熱し、数十
ｎｍ以下の酸化膜を形成するため、数十Ａと薄い酸化膜
が制御よく形成できる。また、素子分離領域に埋込まれ
たシリコンガラス膜（ＢＰＳＧあるいはＰＳＧ）からア
ウト・ディフュージョンしたリンやボロンの基板への侵
入を防ぐことができる。さらに、光を用いて半導体基板
のみを加熱するため、酸化膜形成中に炉心管からの不純
物汚染を受けに＜＜、清浄な酸化膜が形成できる。As explained above, the present invention uses light to heat in an oxidizing atmosphere at a temperature of 800°C or higher for several seconds to several minutes to form an oxide film with a thickness of several tens of nanometers or less. Films can be formed with good control. Furthermore, it is possible to prevent phosphorus and boron that have diffused out from the silicon glass film (BPSG or PSG) embedded in the element isolation region from entering the substrate. Furthermore, since only the semiconductor substrate is heated using light, a clean oxide film can be formed without being contaminated by impurities from the furnace tube during the formation of the oxide film.
第１図は本発明の第一の実施例を説明するための断面図
であり、第２図は本発明の第二の実施例を説明するため
の断面図、第３図は本発明の第三の実施例を説明するだ
めの断面図である。
１・・・・・・シリコン基板、２・・・・・・フィール
ド酸化膜、３・・・・・・ゲート酸化膜、４・・・・・
・シリコンガラス膜、５・・・・・・ゲート酸化膜、６
・・・・・・シリコンガラス膜、７・・・・・・ゲート
酸化膜、８・・・・・−ゲート酸化膜。
／、腰
丹トーレイｎ斤で
＝／ＩＪプシガラズＩびFIG. 1 is a cross-sectional view for explaining a first embodiment of the present invention, FIG. 2 is a cross-sectional view for explaining a second embodiment of the present invention, and FIG. 3 is a cross-sectional view for explaining a second embodiment of the present invention. FIG. 7 is a cross-sectional view illustrating a third embodiment. 1...Silicon substrate, 2...Field oxide film, 3...Gate oxide film, 4...
・Silicon glass film, 5... Gate oxide film, 6
. . . Silicon glass film, 7 . . . Gate oxide film, 8 . . . - Gate oxide film. /、Koshitan Toray n Cat=/IJ Pushgaraz Ibi
Claims (3)
気中で、光を用いて加熱し、前記基板表面に数十ｎｍ以
下の酸化膜を形成することを特徴とする半導体装置の製
造方法。(1) A method for manufacturing a semiconductor device, which comprises heating a silicon substrate using light at a temperature of 800° C. or higher in an oxidizing atmosphere to form an oxide film of several tens of nanometers or less on the surface of the substrate.
徴とする特許請求の範囲第（１）項記載の半導体装置の
製造方法。(2) The method for manufacturing a semiconductor device according to claim (1), wherein the optical heating is performed by halogen lamp heating.
された酸化膜が形成されていることを特徴とする特許請
求の範囲第（１）項記載の半導体装置の製造方法。(3) The method for manufacturing a semiconductor device according to claim (1), wherein an oxide film doped with impurities is formed on a part of the surface of the silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23021385A JPS6288328A (en) | 1985-10-15 | 1985-10-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23021385A JPS6288328A (en) | 1985-10-15 | 1985-10-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6288328A true JPS6288328A (en) | 1987-04-22 |
Family
ID=16904336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23021385A Pending JPS6288328A (en) | 1985-10-15 | 1985-10-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6288328A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01154524A (en) * | 1987-12-10 | 1989-06-16 | Fujitsu Ltd | Formation of oxide film |
| US5024962A (en) * | 1990-04-20 | 1991-06-18 | Teledyne Industries, Inc. | Method for preventing auto-doping in the fabrication of metal gate CMOS devices |
| US5279973A (en) * | 1990-10-16 | 1994-01-18 | Kabushiki Kaisha Toshiba | Rapid thermal annealing for semiconductor substrate by using incoherent light |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245129A (en) * | 1985-08-23 | 1987-02-27 | Sony Corp | Manufacture of semiconductor device |
-
1985
- 1985-10-15 JP JP23021385A patent/JPS6288328A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245129A (en) * | 1985-08-23 | 1987-02-27 | Sony Corp | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01154524A (en) * | 1987-12-10 | 1989-06-16 | Fujitsu Ltd | Formation of oxide film |
| US5024962A (en) * | 1990-04-20 | 1991-06-18 | Teledyne Industries, Inc. | Method for preventing auto-doping in the fabrication of metal gate CMOS devices |
| US5279973A (en) * | 1990-10-16 | 1994-01-18 | Kabushiki Kaisha Toshiba | Rapid thermal annealing for semiconductor substrate by using incoherent light |
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