JPS6289065A - light receiving member - Google Patents

Abstract

PURPOSE:To obtain a light receiving material which permits easy production control by having the 1st layer consisting of an amorphous material contg. silicon atoms and the 2nd layer having an antireflection function and constituting the 1st layer of a layer contg. germanium or tin atoms and a layer which does not contain said atoms. CONSTITUTION:Either the germanium or tin atoms are incorporated in a uniformly distributed state into the layer 102' in contact with a base 101 or is incorporated in a ununiformly distributed state therein in the 1st layer 102. More particularly, the germanium atoms and/or tin atoms are distributed more on the base side than on the layer 102' side. The light of the long wavelength which is hardly absorbed in the layer 102'' is thoroughly absorbed in the layer 102' in the case of using a light source for the long wavelength such as semiconductor laser light if the distribution concn. of either the germanium or tin atoms is increased to the extreme degree at the end of the base 101 side in this case. The interference by the light reflected from the base surface is thus prevented.

Description

[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Description of prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed. Furthermore, methods of recording images that perform processes such as transfer and fixing as necessary are known. Among them, in image forming methods using electrophotography, the laser used is a small and inexpensive He-Ne laser or a semiconductor laser ( It is common practice to perform image recording using a light emitting wavelength (usually having an emission wavelength of 650 to 820 nm).

By the way, as a light-receiving member for electrophotography suitable when using a semiconductor laser, in addition to being superior in consistency of its photosensitivity region compared to other types of light-receiving members,
Amorphous materials containing silicon atoms (hereinafter referred to as A light-receiving member made of a material (abbreviated as "a-8i") has been attracting attention.

However, in the light-receiving member, if the light-receiving layer is a single-layer a-8i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 10120 m or more required for electrophotography, It is necessary to structurally contain hydrogen atoms, halogen atoms, or boron atoms in addition to these in a specific amount range in a controlled manner in the layer, so various conditions must be strictly controlled during layer formation. There are considerable limitations on the design tolerances of the light-receiving member, such as the need to control the Proposals have been made to improve such design tolerance problems by making it possible to effectively utilize the high light sensitivity even if the dark resistance is low to some extent. That is, for example, JP-A-54-121743, JP-A-57-4053, and JP-A-57-417.
As seen in Japanese Patent Application Laid-Open No. 57-52178, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or No. 52179, No. 52180, No. 58159,
As seen in Patent Publications No. 58160 and No. 58161, a barrier layer is provided between the support and the light-receiving layer and/or on the upper surface of the light-receiving layer to create a multilayer structure, which gives a superior appearance. A light-receiving member with increased dark resistance has been proposed.

However, in such a light-receiving member whose light-receiving layer has a multilayer structure, the thickness of each layer varies, and when laser recording is performed using this device, the laser light is coherent monochromatic light, so the light reception is difficult. The free surface of the layer on the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (
From now on, the term "free surface" and "layer interface" will be used together.
It is called "interface". ) The reflected light beams that are reflected from each other often cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly in the case of forming a half-tone image with high gradation, a blurred image with extremely poor distinguishability is produced.

Another important point is that as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so there is a problem that the above-mentioned interference phenomenon becomes more noticeable. .

That is, for example, in a device with a structure of two or more layers (multilayer), interference effects occur in each of those layers, and each interference acts synergistically to create an interference fringe pattern. This directly affects the transfer member, and there is a problem that interference fringes corresponding to the interference fringe pattern are transferred and fixed onto the member and appear in a visible image, resulting in a defective image.

As a measure to solve these problems, (a) a method of diamond cutting the surface of the support to provide unevenness of ±500 mm and 10,000 A to form a light scattering surface (for example, JP-A-58
(b) A method of providing a light absorption layer by treating the surface of the aluminum support with black alumite or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Laid-Open No. 162975) (c) A method of providing a light-scattering anti-reflection layer on the surface of an aluminum support by subjecting the surface of the aluminum support to satin-like alumite treatment or sandblasting to provide fine roughness in the form of grains ( For example, see Japanese Patent Application Laid-Open No. 57-16554)
etc. have been proposed.

Although these proposed methods provide some results, they are not sufficient to completely eliminate the interference fringe pattern that appears on images.

That is, in method (a), a large number of irregularities of a specific t are provided on the surface of the support, and although this prevents the appearance of interference fringes due to the light scattering effect to some extent,
As for light scattering, the specularly reflected light component still remains, so in addition to the interference fringe pattern caused by the specularly reflected light remaining, the irradiation spot spreads due to the light scattering effect on the support surface, causing substantial This results in a significant decrease in resolution.

Regarding method (b), complete absorption is not possible with black alumite treatment, and the reflected light on the support surface remains. In addition, when providing a colored pigment dispersed resin layer,
When forming the a-8i layer, a degassing phenomenon occurs from the resin layer,
The layer quality of the formed photoreceptive layer is significantly deteriorated, and the resin layer is damaged by the plasma during the formation of the a-3i layer, reducing its original absorption function, and the subsequent a -8i layer formation is adversely affected.

Regarding method (c), for example, if we look at the incident light, a part of it is reflected on the surface of the photoreceptive layer and becomes reflected light,
The remainder enters the inside of the light-receiving layer and becomes transmitted light. On the surface of the transparent paper, part of the light is scattered and becomes diffused light, the rest is specularly reflected and becomes reflected light, and part of it becomes emitted light and goes out. However, since the emitted light is a component that interferes with the reflected light and remains in any case, the interference fringe pattern still does not completely disappear.

By the way, in order to prevent interference in this case, some attempts have been made to increase the diffusivity of the surface of the support so that multiple reflections do not occur within the photoreceptive layer, but such attempts instead cause light to be absorbed within the photoreceptive layer. is diffused, causing rations and ultimately resulting in a decrease in resolution.

In particular, in a multilayered light-receiving member, even if the surface of the support is irregularly roughened, the light reflected from the first layer surface, the light reflected from the second layer, and the specularly reflected light from the support surface are all affected. The interference results in an interference fringe pattern depending on the thickness of each layer of the light-receiving member. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support.

Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the roughness varies widely between lots, and even within the same lot, the roughness is uneven. , there is a problem in manufacturing control. In addition, relatively large protrusions are often formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

Furthermore, if the surface of the support is simply roughened regularly,
Since the light-receiving layer is deposited along the uneven shape of the surface of the support, the inclined surface of the unevenness of the support and the inclined surface of the unevenness of the light-receiving layer become parallel, and in that part, the incident light is directed to the bright area. , which results in dark areas, and because of the non-uniformity of the layer thickness of the photoreceptive layer, a striped pattern of light and darkness appears in the entire photoreceptive layer. Therefore, simply by regularly roughening the surface of the support, it is not possible to completely prevent the occurrence of interference fringes.

Also, when a multilayered light-receiving layer is deposited on a support whose surface is regularly roughened, specular reflection light on the support surface and
In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference due to the reflected light at the interface between each layer, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

The object of the present invention is to eliminate the above-mentioned problems and to provide a light-receiving member having a light-receiving layer mainly composed of a-8i, which satisfies various demands.

That is, the main object of the present invention is to have electrical, optical, and photoconductive properties that are virtually always stable without depending on the usage environment, have excellent light fatigue resistance, and exhibit no deterioration phenomenon even after repeated use. To provide a light-receiving member having a light-receiving layer made of a-8i, which has excellent durability and moisture resistance, has no or almost no residual potential, and is easy to manage in production. be.

Another object of the present invention is to provide a light-receiving member having a light-receiving layer made of a-8i, which has high photosensitivity in the entire visible light range, has excellent matching properties with semiconductor lasers, and has a fast photoresponse. It is about providing.

Still another object of the present invention is to provide a light-receiving member having a light-receiving layer made of a-8i, which has high photosensitivity, high signal-to-noise ratio characteristics, and high electrical voltage resistance.

Another object of the present invention is to have excellent adhesion between a layer provided on a support and the support and between each layer of laminated layers,
A-
An object of the present invention is to provide a light-receiving member having a light-receiving layer made of 8i.

Still another object of the present invention is to be suitable for image formation using coherent monochromatic light, to be free of interference fringes and spots during reversal development even after repeated use over a long period of time, and to be free from image defects and image formation. To provide a light-receiving member having a light-receiving layer made of a-8i, capable of obtaining a high-quality image with no blur, high density, clear halftones, and high resolution. It is in.

[Structure of the invention]

The present inventors have obtained the above-mentioned knowledge as a result of intensive research in order to overcome the above-mentioned problems with conventional light-receiving members and achieve the above-mentioned objective, and have developed the present invention based on the above-mentioned knowledge. It was completed.

That is, the present invention provides a photoreceptor comprising a photoreceptor layer having a first layer made of an amorphous material containing silicon atoms and a second layer having an antireflection function on a support. In the member, the first layer has a multilayer structure including, in order from the support side, a layer containing at least one of germanium atoms or tin atoms, and a layer containing neither germanium atoms nor tin atoms; The present invention relates to a light-receiving member in which the surface of the support has an uneven shape formed by a plurality of spherical trace depressions.

By the way, the findings obtained by the present inventors as a result of extensive research are summarized as follows: In a light-receiving member having a plurality of layers on a support, the surface of the support is provided with irregularities formed by a plurality of spherical trace depressions. This eliminates the problem of interference fringes that appear during image formation.

This knowledge is based on facts obtained through various experiments conducted by the present inventors.

This will be explained below using drawings to facilitate understanding.

FIG. 1 is a schematic diagram showing the layer structure of a light-receiving member 100 according to the present invention; A light-receiving member comprising a photosensitive layer 102 and a surface layer 103 is shown.

FIGS. 2 and 3 are diagrams for explaining how the problem of interference fringes is solved in the light-receiving member of the present invention.

FIG. 3 is an enlarged view of a part of a conventional light-receiving member in which a multilayer light-receiving layer is deposited on a support whose surface is regularly roughened. In the vaginal opening, 301 represents the first layer, 302 represents the second layer, 303 represents the free surface, and 304 represents the interface between the first layer and the second layer. As shown in FIG. 3, when the surface of the support is simply roughened regularly by means such as cutting, the light-receiving layer is usually formed along the irregularities V on the surface of the support. The inclined surface of the unevenness on the surface of the support and the inclined surface of the unevenness of the light-receiving layer are in a parallel relationship.

Due to this, for example, the photoreceptive layer is the first layer 301.
In a light-receiving member having a multilayer structure consisting of two layers, ie, a first layer and a second layer 302, the following problems regularly arise, for example.

That is, since the interface 304 between the first layer and the second layer and the free surface 303 are in a parallel relationship, the reflected light R1 at the interface 304 and the reflected light R2 at the free surface match in direction, and Interference fringes are generated depending on the thickness of the second layer.

FIG. 2 is an enlarged view of a part of FIG. 1, and as shown in FIG. 2, the light-receiving member of the present invention has an uneven shape formed by a plurality of minute spherical trace depressions on the surface of the support. Since the light-receiving layer t thereon is deposited along the uneven shape, for example, the light-receiving layer 201 and 20
In a light-receiving member with a multilayer structure consisting of two layers,
The interface 204 between the first layer 201 and the second layer 202 and the free surface 203 are each formed into an uneven shape with spherical trace depressions along the uneven shape of the support surface. If the curvature of the spherical trace depression formed on the interface 204 is R1, and the curvature of the spherical trace depression formed on the free surface 203 is R2, R1 and R2 become R+ 4 R2, so the reflected light at the interface 204 and , the reflected light on the free surface 203 is
Each has a different reflection angle, i.e. θl in FIG.
, θ2 is θlΦθ2, the directions are different, and the second
t, , t2. shown in the figure. 7 using t3. +t
Since the wavelength shift represented by 2-z3 is not constant but changes, shearing interference corresponding to the so-called Newton's ring phenomenon occurs, and the interference fringes are dispersed within the depression. As a result, even if interference fringes appear microscopically in the image appearing through such a light-receiving member, they are not visible to the naked eye.

In other words, the use of a support having an osmotic surface shape results in a light receiving member having a multilayered light receiving layer formed thereon, and the light passing through the light receiving layer is transmitted to the layer interface and the support. Reflection on the body surface and their interference effectively prevent the formed image from becoming striped, leading to the creation of a light-receiving member capable of forming an excellent image.

By the way, the curvature R and width of the uneven shape due to the spherical trace depressions on the support surface of the light receiving member of the present invention efficiently achieve the effect of preventing the occurrence of interference fringes in the light receiving member of the present invention. This is an important factor. The present inventors have investigated the following points as a result of various experiments.

That is, if the curvature R and the width satisfy the following formula: 0.5 or more Newton rings due to shearing interference will exist in each trace depression. Furthermore, if the following formula is satisfied, one or more Newton rings due to shearing interference will exist in each trace depression.

For this reason, it is desirable to disperse the interference fringes that occur throughout the light receiving member into each of the trace depressions in order to prevent the interference fringes from occurring in the light receiving member.

In addition, the width of the unevenness due to the trace depression is 500 mm
About μm, preferably 200 μm or less, more preferably
It is desirable that u be 100 μm or less.

The light-receiving layer of the light-receiving member of the present invention provided on a support having a specific surface shape as described above consists of a first layer and a second layer, and the first layer is composed of silicon atoms (Si ), at least one of a germanium atom (Ge) or a tin atom (Sn), and preferably a hydrogen atom (
A luamorphous material containing at least one of I() or a halogen atom (X) [hereinafter referred to as "a-5i
It is written as (Ge, 5n)(H,X)J. ], an amorphous material [hereinafter referred to as "a"] containing silicon atoms (Sl), and preferably at least one of hydrogen atoms (H) or...
It is written as -8i (H,X)j. This is a multilayer structure in which the layers consisting of ] are provided in order from the support side. The number -
The layer may contain at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and may further contain a substance that controls conductivity. Particularly preferably, it has a charge injection blocking layer containing a substance that controls conductivity as one of the constituent layers, and/or a barrier layer as one of the constituent layers.

Further, the second layer is made of at least one kind selected from inorganic fluorides, inorganic oxides, and inorganic sulfides, and exhibits an antireflection function.

Regarding the creation of the first layer and the second layer of the present invention, in order to efficiently achieve the above-mentioned object of the present invention, it is necessary to accurately control the layer thickness at the optical level. Vacuum deposition methods such as glow discharge method, sputtering method, and ion blating method are usually used, but in addition to these methods, optical CVD method, thermal CVD method, etc. can also be employed.

Hereinafter, the specific structure of the light receiving member of the present invention will be explained in detail with reference to FIG. 1, but the present invention is not limited thereto.

FIG. 1 is a diagram schematically showing the layer structure of the light-receiving member of the present invention, in which 100 is the light-receiving member, 101 is the support, 102 is the first layer, 102 ' is a 5 layer containing at least one of germanium atoms or tin atoms, 102'' is a layer containing neither germanium atoms nor tin atoms, 103 is a second layer,
104 indicates a free surface.

Support The support 101 in the light-receiving member of the present invention has irregularities on its surface that are finer than the resolution required for the light-receiving member, and the irregularities are formed by a plurality of spherical trace depressions.

Hereinafter, examples of the shape of the surface of the support and a preferable manufacturing method thereof will be explained in detail with reference to FIGS. 4 and 5, but the shape of the support in the light receiving member of the present invention and the manufacturing method thereof are limited by these. It's not a thing.

FIG. 4 schematically shows a typical example of the shape of the support surface in the light-receiving member of the present invention, partially enlarging a part of the uneven shape. In Figure 4, 401
is a support, 402 is a support surface, 403 is a rigid true sphere, 4
04 indicates a spherical trace depression.

Furthermore, FIG. 4 also shows one example of a preferred manufacturing method for obtaining the surface shape of the support. In other words, it is shown that a spherical depression 404 is formed by allowing a rigid true sphere 403 to naturally fall from a position at a predetermined height above the support surface 402 and collide with the support surface 402 . Then, by using a plurality of rigid true spheres 403 having approximately the same diameter R' and dropping them simultaneously or sequentially from the same height h, approximately the same curvature R and the same width are formed on the support surface 402. A plurality of spherical trace depressions 404 can be formed.

FIG. 5 shows some typical examples of supports having an uneven shape formed by a plurality of spherical trace depressions on the surface as described above.

In the example shown in FIG. 5(A), the surface 502 of the support 501
A plurality of spheres 503 having approximately the same diameter at different parts of the
503, . . . are regularly dropped from approximately the same height to produce a plurality of trace depressions 604, 604, . Chilled with regularly formed uneven shapes. In this case, the depressions 504 and 50 overlap with each other.
4, .
, 503, . . . need to fall naturally.

In the example shown in FIG. 5(B), two types of spheres 503, 503', etc. having different diameters are dropped from approximately the same height or from different heights, and are dropped onto the surface 502 of the support 501. , a plurality of depressions 504 with two types of curvature and two types of width.
, 504', . . . are formed densely so as to overlap each other, thereby forming irregularities with irregular heights on the surface.

Furthermore, in the example shown in the front view and sectional view of the support surface in FIG. 5(C), a plurality of spheres 503, 503, . A plurality of depressions 504, 504, . . . having substantially the same curvature and a plurality of widths are formed so as to overlap each other, thereby forming irregular irregularities.

As described above, by dropping a rigid true sphere onto the support surface, it is possible to form an uneven shape with spherical trace depressions, but in this case, the diameter of the rigid true sphere, the height at which it is dropped,
By appropriately selecting various conditions such as the hardness of the rigid true sphere and the surface of the support, or the amount of spheres to be dropped, a plurality of spherical trace depressions having the desired curvature and width can be created on the surface of the support.
It can be formed with a predetermined density.

That is, by selecting the above-mentioned conditions, the height of the unevenness and the pitch of the unevenness formed on the surface of the support can be freely adjusted according to the purpose, and the support having the desired unevenness on the surface can be adjusted. Obtainable.

In order to make the support of the light-receiving member have an uneven surface, a method has been proposed in which cutting is performed using a diamond cutting tool using a lathe, milling machine, etc., and although this is a reasonably effective method, In this method, it is essential to use cutting oil, remove chips that are inevitably generated by cutting, and remove cutting oil that remains on the cutting surface. However, in the present invention, since the uneven surface shape of the support is formed by spherical trace depressions as described above, the above-mentioned problems can be completely eliminated and the support with the desired uneven surface can be obtained. It can be created efficiently and easily.

The support 101 used in the present invention may be electrically conductive or electrically insulating. As the conductive support, for example, NiCr.

Stainless steel, AtX(::rXMOlAu, Nb,
Ta.

Examples include metals such as V, Ti, pt, pb, and alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, and the like. It is preferable that at least one surface of these electrically insulating supports is conductively treated, and a light-receiving layer is provided on the conductively treated surface side.

For example, if it is glass, NiCr, At
, (:rXMo, Au11r, Nb, Ta,
V, Ti.

Pt, Pd% InzO3,5nOz, ITO(Ir
Conductivity can be imparted by providing a thin film consisting of LzO3+5nOz), or if it is a synthetic resin film such as a polyester film, NiCr, AtXAg5
Pb%Zn, NiXAu, Cr, Mo, IrX
A thin film of metal such as Nb, Ta, V, Tt, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to impart conductivity to the surface. . The shape of the support can be any shape such as a cylinder, a belt, a plate, etc., and the shape can be determined as appropriate depending on the purpose and desire. For example, the light receiving member 100 in FIG.
If used as an electrophotographic image forming member, it is desirable to have an endless belt shape or a cylindrical shape for continuous high-speed copying. The thickness of the support is appropriately determined so as to form the desired light-receiving member, but if the light-receiving member requires flexibility, the thickness should be determined within a range that allows the support to function adequately. can be made as thin as possible.

However, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., the thickness is usually set to 10μ or more.

Next, when the light-receiving member of the present invention is used as a light-receiving member for electrophotography, an example of an apparatus for manufacturing the surface of the support will be explained with reference to FIGS. 6(A) and 6(B). However, the present invention is not limited thereto.

Supports for electrophotography and light-receiving materials are made by extruding an aluminum alloy or the like to form boathole tubes or mandrel tubes, and then heat-treating or heat-treating the resulting tubes as necessary. A cylindrical (cylindrical) base that has been subjected to treatment such as heat refining is used, and a sixth
(A).

(B) Using the manufacturing apparatus shown in the figure, an uneven shape is formed on the surface of the support.

Examples of the spheres used to form the above-mentioned uneven shape on the surface of the support include various rigid spheres made of metals such as stainless steel, aluminum, steel, nickel, and brass, ceramics, and plastics. Rigid spheres made of stainless steel and steel are preferred for reasons such as low cost and cost reduction. And the hardness of such a sphere is
The hardness may be higher or lower than that of the support, but if the sphere is to be used repeatedly, it is desirable that the hardness be higher than that of the support.

Figures 6 (A) and 6 (B) are schematic cross-sectional views of the entire manufacturing equipment, and show 601 aluminum cylinders for making supports. It's okay. The cylinder 601 is
It is supported by a rotating shaft 602, and is driven by a suitable driving means 603 such as a motor so as to be able to rotate approximately around the axis. The rotation speed is appropriately determined and controlled in consideration of the density of the spherical trace depressions to be formed, the supply amount of rigid true spheres, and the like.

604 is a dropping device for naturally falling the rigid true sphere 605, a ball feeder 606 for storing and dropping the rigid true sphere 605, and swinging so that the rigid true sphere 605 easily falls from the feeder 606. Vibrator 60
7. A recovery tank 608 for collecting the rigid true spheres 605 that collide with the cylinder and fall; a ball feeding device 609 for transporting the rigid true spheres 605 collected in the recovery tank 608 through a pipe to the feeder 606; and a feeding device 609 A cleaning device 610 and a cleaning device 61 for cleaning the rigid true sphere with liquid during the process.
It is comprised of a liquid reservoir 611 for supplying cleaning liquid (solvent, etc.) to the 0 through a nozzle or the like, a recovery tank 612 for recovering the liquid used for cleaning, and the like.

The amount of rigid true spheres that naturally fall from the feeder 606 is adjusted as appropriate depending on the degree of opening and closing of the drop port 613, the degree of shaking by the vibrator 607, and the like.

First Layer In the light-receiving member of the present invention, the first layer 102 is provided on the support 101 described above, and the second layer is provided on the support 101.
From the 01 side, germanium atoms (Ge) or tin atoms (
a-3i [hereinafter referred to as "a-8i (Ge, Sn
) (H,X)J. ] Layer 10 composed of
a-8i [hereinafter referred to as r
a − s: (H, x) Written as J. The second layer 102 has a multilayer structure in which a layer 102'' consisting of Atoms that are not contained can be contained, and further, a substance that controls conductivity can be contained as necessary.

Specific examples of the rogen atom (X) contained in the first layer include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. The amount of hydrogen atoms (H) contained in the first layer 102, the amount of halogen atoms (X), or the sum of the amounts of hydrogen atoms and halogen atoms (H+X) is usually 1 to 1.
40 atomic%, preferably 5-30 atomic%
It is desirable to set it to c%.

In addition, in the light-receiving member of the present invention, the layer thickness of the first layer is one of the important factors for efficiently achieving the object of the present invention.
In order to give the light-receiving member the desired characteristics, it is necessary to pay sufficient attention when designing the light-receiving member.
0μ, more preferably 2 to 50.

By the way, the purpose of containing germanium atoms and/or tin atoms in the first layer of the light-receiving member of the present invention is mainly to improve the absorption spectrum characteristics of the light-receiving member on the long wavelength side.

That is, by containing germanium atoms and/or tin atoms in the first layer, the light-receiving member of the present invention exhibits various excellent properties, especially in the visible light region. It has excellent photosensitivity to light in the entire wavelength range from relatively short wavelengths to relatively short wavelengths, and has fast photoresponsiveness. This is particularly noticeable when a semiconductor laser is used as a light beam.

In the first layer in the present invention, germanium atoms and/or tin atoms are present in the layer 102 in contact with the support 101.
102' in a uniformly distributed state, or in a non-uniformly distributed state (here, a uniformly distributed state means that the distribution concentration of germanium atoms and/or tin atoms is It means that it is uniform in the plane direction parallel to the surface of the support and is also uniform in the layer thickness direction of the layer 102', and the non-uniform distribution state means that the distribution concentration of germanium atoms and/or tin atoms is uniform. , the layer 102' is uniform in the plane parallel to the surface of the support, but the layer 102'
' is non-uniform in the layer thickness direction. ) In the layer 102' of the present invention, it is particularly desirable that the germanium atoms and/or tin atoms be contained in a state where they are more distributed on the support side than on the layer 102'' side, and in such a case, By increasing the distribution concentration of germanium atoms and/or tin atoms at the edge on the support side, when a long wavelength light source such as a semiconductor laser is used, almost all of it can be absorbed in the 1 oz' layer. The long wavelength light that does not exist can be substantially completely absorbed in the layer 102', and interference by reflected light from the support surface is prevented.

Furthermore, in the light-receiving member of the present invention, since the amorphous materials forming the layer 102' and the layer 102N each have a common constituent element of silicon atoms, chemical stability is maintained at the laminated interface. Sufficiently secured.

Below, germanium atoms contained in the layer 102' and/or
Or some typical examples of the distribution state of tin atoms in the layer thickness direction of the layer 102', taking germanium atoms as an example,
This will be explained with reference to FIGS.

7 to 15, the horizontal axis represents the distribution concentration C of germanium atoms, and the vertical axis represents the layer thickness of the layer 102', t
B indicates the position of the end of the layer 102' on the support side, and tT indicates the position of the end surface of the layer 102'' on the side opposite to the support. In other words, the layer 102' containing germanium atoms is located closer to the tB side. Also, layers are formed toward the tT side.

In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear, and these figures are only for easy understanding. This is a schematic diagram for explanation.

FIG. 7 shows a first typical example of the distribution state of germanium atoms contained in the layer 102' in the layer thickness direction.

In the example shown in FIG. 7, from the interface position tB where the layer 102' and the support surface where the layer 102' containing germanium atoms is formed contact the layer 102', the distribution concentration C of germanium atoms is the concentration C. Germanium atoms are contained in the layer 102' while taking a constant value of C1, and from the position t1, the concentration is gradually and continuously reduced from the concentration C2 to the interface position tT. At the interface position tT, the distribution concentration C of germanium atoms is substantially zero.

(Here, "substantially zero" means that the amount is below the detection limit.) In the example shown in FIG. 8, the distribution concentration C of the contained germanium atoms is from the concentration C3 to the position tT from the position tB. A distribution state is formed in which the concentration gradually and continuously decreases to a concentration C4 at the position tT.

In the case of FIG. 9, from position tB to position tT, the distribution concentration C of germanium atoms is constant at the concentration C5, and gradually and continuously decreases between position t2 and position tT. At tT, the distribution concentration C is substantially zero.

In the case of FIG. 10, the distribution concentration C of germanium atoms is gradually and continuously decreased from the position tB to the position tT, starting from the concentration C6, and rapidly and continuously decreasing from the position t3 until the position tT. is essentially zero.

In the example shown in FIG. 11, the distribution concentration C of germanium atoms is a constant value of concentration C7 between the positions tB and t4, and the distribution concentration C is zero at the position tT. . Between position t4 and position tT, the distribution density C is linearly decreased from position t4 to position tT.

In the example shown in FIG. 12, the distribution concentration C is at the position t
From B to position t5, the concentration C8 takes a constant value, and at position t
5 to position tT, the distribution state is such that the concentration decreases linearly from C9 to C+o.

In the example shown in FIG. 13, from position tB to position tT, the distribution concentration C of germanium atoms is the concentration CI+
It is reduced more linearly and reaches zero.

In FIG. 14, from position ta to position t6, the distribution concentration C of germanium atoms decreases linearly from concentration C12 to concentration CI3, and from position t6 to position t
An example is shown in which the concentration CI3 is set to a constant value between T and T.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is a concentration C14 at the position tB, and is slowly decreased from this concentration C14 until reaching position 7, and near the position t7, The concentration is rapidly decreased to a concentration CI5 at a position t7.

Between position t7 and position t8, the decrease is rapid at first, and then slowly and gradually decreased until position t8.
The concentration becomes CI6, and between position t8 and position t9,
The concentration is gradually decreased and reaches the concentration C1□ at position t9. Between position t9 and position tT, the concentration CI7 is reduced to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 7 to 15, some typical examples of the distribution state of germanium atoms and/or tin atoms contained in the layer 102' in the layer thickness direction, the photoreceptor of the present invention In the member, on the support side, there is a part where the distribution concentration C of germanium atoms and/or tin atoms is high, and on the interface tT side, there is a part where the distribution concentration C is considerably lower than on the support side. It is desirable that the constituent layer 102' has a distribution of atoms and/or tin atoms.

That is, the constituent layer 10 constituting the light receiving member in the present invention
2' preferably has a localized region containing germanium atoms and/or tin atoms at a relatively high concentration on the support side as described above.

In the light-receiving member of the present invention, the localized region can be explained using the symbols shown in FIGS.
It is more desirable that the distance be within 5μ.

The localized region may be the entire layer region up to 5 μm thick from the interface position tB, or may be a part of the layer region.

Whether the localized region is a part or all of the layer 102' is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region contains germanium atoms or/
and the distribution state of tin atoms in the layer thickness direction, the maximum distribution concentration of germanium atoms and/or tin atoms (:: ma
x is preferably 1000 at
omic ppm or more, more preferably 5000 ato
mic ppm or higher, optimally l x lQ'atom
It is desirable that the layers be formed so that a distribution state of icppm or more can be obtained.

That is, in the light-receiving member of the present invention, the layer 102' containing germanium atoms and/or tin atoms has a layer thickness of within 5 μm from the support side (layer region of 5 μ layers from tB).
It is preferable that the distribution density be formed such that the maximum value of the distribution density (::max) exists.

In the light receiving member of the present invention, the content of germanium atoms and/or tin atoms contained in the layer 102' is as follows:
It is necessary to appropriately determine the desired value in order to efficiently achieve the purpose of the present invention, and usually 1 to 5 X IQ5ato
mic ppm, preferably 10-3 x 1
05105ato ppm, more preferably 1×102
~2×105atO105atO.

In the light-receiving member of the present invention, the first layer 102 can contain at least one kind of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms, and which is not contained in the second layer.

Specifically, the second layer is a-8i (H
, X), the first layer can contain carbon atoms and/or nitrogen atoms, and the second layer can contain nitrogen atoms. When the first layer contains carbon atoms and/or oxygen atoms, the second layer may be composed of a-Si (H,X) containing oxygen atoms and nitrogen atoms. If so, the first layer can contain carbon atoms.

The purpose of causing the first layer of the light-receiving member of the present invention to contain at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms (hereinafter referred to as "atoms (0, C, N) j") The main points are to increase the photosensitivity and dark resistance of the light-receiving member, and to improve the adhesion between the support and the first layer.

In the first layer of the present invention, when atoms (0, C, N) are contained, are they contained in a uniform distribution state in the layer thickness direction, or are they contained in a non-uniform distribution state in the layer thickness direction? The amount varies depending on the above-mentioned objectives and expected effects, and therefore the amount to be included also varies.

That is, when the purpose is to increase the photosensitivity and dark resistance of a light-receiving member, the atoms contained in the first layer are uniformly distributed in the entire layer area. The amount of (0, C, N) may be relatively small.

In addition, if the purpose is to improve the adhesion between the support and the first layer, it may be contained uniformly in a part of the layer area at the end of the first layer on the support side, or it may be contained in the first layer. The amount of atoms (0, C, N) contained in the first layer is contained in a distribution state such that the concentration of atoms (0, C, N) is high at the end on the support side. is used in relatively large amounts.

In the light-receiving member of the present invention, the amount of atoms (0, C, N) contained in the first layer is determined, however, in addition to considering the properties required for the first layer as described above. It is determined by taking into consideration the organic relationships such as the characteristics at the contact interface, and is usually O, OO1~50 a
tomic %, preferably Iti 0.002-4
0 atomic%, optimally 0.003-30at
Let it be omic%.

By the way, when atoms (0, C, N) are contained in the entire layer region of the first layer, or when the ratio of a part of the layer thickness in which they are contained is large in the layer thickness of the first layer, , the above-mentioned upper limit of the amount to be included is set a little lower. That is, in that case, for example, the layer thickness of the layer region to be included is such that the amount of the first layer is usually 30 atomic % or less, preferably 20 atomic % or less, optimally 10 atomic %.
ic% or less.

Next, atoms (0, C, N
) is relatively large on the support side, decreases from the end on the support side to the end on the second layer side, and near the end of the first layer on the second layer side. 16th to 2nd show some typical examples where the distribution is relatively small or substantially close to zero.
This will be explained using Figure 4. However, the present invention is not limited to these examples.

In Figures 16 to 24, the horizontal axis is atoms (0°C, N)
The vertical axis indicates the layer thickness of the first layer, tB indicates the interface position between the support and the first layer, and tT indicates the interface position between the first layer and the second layer. show.

Figure 16 shows atoms (0, C,
A first typical example of the distribution state of N) in the layer thickness direction is shown. In this example, from the interface position tB where the first layer containing atoms (0, C, N') and the support surface are in contact with each other to the position t1, the distribution concentration C of atoms (0, C, N') is 01. Take a constant value such that position 1. Up to the interface position tT with the second layer, the distribution concentration C of atoms (0, C, N) decreases continuously from the concentration C2, and at the interface position tT, the distribution concentration C of atoms (0, C, N)
) is 03.

FIG. 17 shows one other typical example.

In this example, atoms (0, C.

The distribution concentration C of N) continuously decreases from the concentration C4 from the position tB to the position tT, and reaches the concentration C5 at the position tT.

In the example shown in FIG. 18, from position tB to position tT, the distribution concentration C of atoms 1'o, c, N) maintains a constant value of concentration C6, and from position tB to position tT, the distribution concentration C of atoms (1'o, c, N) maintains a constant value of concentration C6.
The distribution concentration C of atoms (0, C, N) gradually and continuously decreases from the concentration C7 and reaches the position tT.

The distribution concentration C of N) becomes substantially zero. However, here, "substantially zero" refers to a case where the amount is less than the detection limit amount.

In the example shown in FIG. 19, the distribution concentration C of atoms (0, C, N) gradually decreases from the concentration CB from position tB to position tT, and at position tT, the distribution concentration C of atoms (0, C, N) gradually decreases from the concentration CB.
The distribution concentration C of C, N) becomes substantially zero.

In the example shown in FIG. 20, the distribution concentration C of atoms (0, C, N) is at a constant concentration C9 between position tB and position t3, and between position t3 and position tT,
The density decreases in a negative order scale from the density C5 to the density C+o.

In the example shown in FIG. 21, the distribution concentration C of atoms (0, C, N) is the concentration C1l from position tB to position t4.
The concentration is at a constant value of C+ from position t4 to position tT.
It decreases linearly from Z to the concentration Cps.

In the example shown in FIG. 22, the distribution concentration C of atoms (0, C, N) decreases linearly from the concentration CI4 to substantially zero from the position tB to the position tT.

In the example shown in FIG. 23, the distribution concentration C of atoms (0, C, N) decreases in a linear manner from position tB to position t5, from concentration CI5 to concentration C+s, and at position C5.
The concentration CI6 is kept at a constant value from to position tT.

Finally, in the example shown in FIG. 24, atoms (0, C.

The distribution concentration C of N) is the concentration CI7 at the position tB, and from the position itB to the position t6, it decreases slowly from the concentration CI7, and then decreases rapidly near the position t6,
At position t6, the density becomes C18. Next, from position t6 to position t7, the concentration decreases rapidly at first, and then decreases slowly and gradually, and reaches the concentration CI9 at position t7. Furthermore, between position 7 and position t8, it gradually decreases very slowly, and reaches the concentration C20 at position t8. Furthermore, from position t8 to position tT, the concentration C
It gradually decreases from 20 to essentially zero.

As in the examples shown in FIGS. 16 to 24, the end of the first layer on the support side has a portion with a high distribution concentration C of atoms (0, C, N), and the surface of the first layer If, at the end of the layer side, the distribution concentration C has a fairly low portion or a portion of substantially zero concentration, the atoms ( 0, C, N) having a relatively high distribution concentration, preferably the localized region is located at the interface position tB between the support surface and the first layer.
By providing a distance of 5 μm or less from , it is possible to improve the adhesion between the support and the first layer even more efficiently.

The localized region may be all or a part of the layer region at the end of the first layer on the support side that contains atoms (0, C, N); Whether to do so or not is determined as appropriate depending on the characteristics required of the first layer to be formed.

The amount of atoms (0, C, N) contained in the localized region is such that the maximum molecular concentration C of atoms (0, C, N) is 500at.
omic ppm or more, preferably 800 atomic
c ppm or more, optimally 1000 atomic p
It is desirable to have a distribution state in which the amount is equal to or higher than pm.

In the light-receiving member of the present invention, the first layer can contain a substance that controls conductivity in the entire layer region or in a part of the layer region in a uniform or non-uniform distribution state.

Examples of the substance that controls conductivity include so-called impurities in the semiconductor field, which are atoms belonging to group Ⅰ of the periodic table (hereinafter simply referred to as ``group Ⅰ'') that give P-type conductivity.
"group atoms". ), or atoms belonging to Group Ⅰ of the periodic table (hereinafter simply referred to as ``Group Ⅰ atoms'') that provide n-type conductivity are used. Specifically, as group Ⅰ atoms,
Examples include B (boron), At (aluminum), Ga (gallium), In (indium), and Tt (thallium), but particularly preferred are B and Ga. Group III atoms include P (phosphorus), As (arsenic),
Sb (antimony), Bi (bismane), etc. can be mentioned, but PlSb is particularly preferred.

When the first layer of the present invention contains group (III) atoms or group (III) atoms, which are substances that control conductivity, they may be contained in the entire layer region (or they may be contained in some layer regions). Whether or not to include it depends on the purpose or expected effect, as will be described later, and the situation in which it is included also differs.

That is, when the main purpose is to control the conductivity type and/or conductivity of the first layer, it is contained in the entire layer region of the first layer. The content of group atoms may be relatively small1, usually 1 x 10 ~
IX10atOmiCppm, preferably 5X
10-2 to 5 x 102102ato ppm, optimally I x 10-' to 2 x 102ato102
It is ato.

In addition, the group (III) atoms or group (III) atoms may be contained in a uniform distribution state in a part of the layer region in contact with the support, or the distribution concentration of the group (III) atoms or group V atoms in the layer thickness direction may be When containing the group (III) atoms at a high concentration on the side in contact with the support, the group (III) atoms or the constituent layer containing the group (III) atoms may be The containing layer region will function as a charge injection blocking layer. In other words, when the group Ⅰ atoms are contained, when the free surface of the photoreceptive layer is subjected to polar charging treatment, the movement of electrons injected from the support side into the photoreceptor layer is made more efficient. In addition, when group Ⅰ atoms are contained, when the free surface of the photoreceptive layer is subjected to a polar charging treatment, ③ is injected into the photoreceptor layer from the support side. The movement of holes can be more efficiently blocked. In such a case, the content is relatively large, specifically, 30 to 5 x 10' atomic
ppm, preferably 50-I x 10' at
omic ppm, optimally 1 x 102 ~ 5 x 10
3103ato ppm. Furthermore, in order to efficiently reduce the effect of the charge injection blocking layer, it is necessary to adjust the thickness of the layer or layer region provided at the end portion of the support side containing Group (I) atoms or Group V atoms. , when the layer thickness of the photoreceptive layer is T, it is desirable that the relationship t/T≦0.4 holds true, and more preferably the value of this relational expression is 0.35 or less, most preferably 0.3. It is desirable to have the following.

Further, the layer thickness t of the layer or layer region is generally 3
10-3 to 10μ, preferably 4 x 10-
It is desirable that the thickness be 3 to 8μ, most preferably 5×10−3 to 5μ.

Next, the amount of group (III) atoms or group (III) atoms contained in the first layer is relatively large on the support side, decreases from the support side toward the second layer, and A typical example of distributing group Ⅰ atoms or group Ⅰ atoms so that the amount is relatively small or substantially close to zero near the interface with the first layer is as follows. oxygen atom,
This can be explained using an example similar to the example shown in FIGS. 16 to 24, in which at least one type selected from carbon atoms and nitrogen atoms is contained. However, the invention is not limited to these examples.

As in the examples shown in FIGS. 16 to 24, the first layer has a portion with a high distribution concentration C of group (III) atoms or group (III) atoms on the side closer to the support, and the second layer and On the interface side of
If the distribution concentration C has a portion with a considerably low concentration or a portion with a concentration substantially close to zero, the distribution concentration of group (III) atoms or group (III) atoms is relatively high in a portion close to the support side. By providing a localized region with a high concentration, preferably by providing the localized region within 5 μm from the interface position in contact with the support surface, the distribution concentration of group (III) atoms or group (III) atoms is high. The above-mentioned effect that the layer region forms a charge injection blocking layer can be achieved even more efficiently.

As mentioned above, regarding the distribution state of Group Ⅰ atoms or Group V atoms,
Although the effects of each have been described individually, in order to obtain a light-receiving member having characteristics that can achieve the desired purpose, the distribution state of these group (III) atoms or group (III) atoms and their content in the first layer The amount of Group Ⅰ atoms or Group Ⅰ atoms used in appropriate combinations as necessary means that
Needless to say. For example, when a charge injection blocking layer is provided at the end of the first layer on the support side, a substance that controls conductivity contained in the charge injection blocking layer is added to the first layer other than the charge injection blocking layer. It may contain a substance that controls conductivity of a polarity different from the polarity, or it may contain a substance that controls conductivity of the same polarity in an amount much smaller than that contained in the charge injection blocking layer. You can force it.

Furthermore, in the light-receiving member of the present invention, as a constituent layer provided at the end on the support side, instead of the charge injection blocking layer,
A so-called barrier layer made of an electrically insulating material can also be provided, or both the barrier layer and the charge injection blocking layer can be constituent layers. Examples of materials constituting such a barrier layer include inorganic electrically insulating materials such as At203.5102 and Si3N4, and organic electrically insulating materials such as polycarbonate.

Next, a method for forming the first layer of the present invention will be explained.

The amorphous material constituting the first layer of the present invention is formed by a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blasting method. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, level of equipment capital investment, manufacturing scale, and desired characteristics of the light-receiving member to be manufactured. The glow discharge method or the sputtering method is preferable because it is relatively easy to control the conditions for manufacturing the receiving member, and carbon atoms and hydrogen atoms can be easily introduced together with silicon atoms. be.

Further, the glow discharge method and the sputtering method may be used together in the same apparatus system.

For example, by glow discharge method, a-81(H*X)
To form a layer composed of, basically, along with a raw material gas for supplying Si that can supply silicon atoms (Si)
Hydrogen atoms (for H”l introduction or/and halogen atoms (X
) A raw material gas for introduction is introduced into a deposition chamber whose interior can be reduced in pressure, a glow discharge is generated in the deposition chamber, and a-3i (H
, X).

As the raw material gas for supplying Si, SiH4.5lz
Examples include gaseous or gasifiable silicon hydrides (cyranos) such as Hs, 5j3H8, 5i4Hto, and in particular,
In terms of ease of layer formation work and good Si supply efficiency, S
iH<, Si2H6 is preferred.

Further, as the raw material gas for introducing halogen atoms, there are many halogen compounds, such as evaporated halogen gas,
Gaseous or gasifiable halogen compounds such as halides, interhalogen compounds, halogen-substituted silane derivatives are preferred. Specifically, fluorine, chlorine, bromine,
Iodine halogen gas, BrF s CtF % C2
F5, BrF5, BrF3, IF7, Ict, IBr
interhalogen compounds such as SiF4, Si2F6.
Examples include silicon halides such as 5IC44 and SiBr4. When using a silicon halide in a gaseous state or one that can be gasified as described above, a layer composed of a-8i containing halogen atoms can be formed without separately using a raw material gas for supplying Sl. This is especially effective because it can be done.

Further, as the raw material gas for supplying hydrogen atoms, hydrogen gas, halides such as I(F, HCl, HBr, XHI, etc.), 5IH4, Si2H6, 5i3Ha, 5i4
Silicon hydride such as H+o, or 5iHzFz, 5iH
zh, SiHz(, tz, 5iHCt3.5iH2Br
Gaseous or gasifiable materials such as halogen-substituted silicon hydrides such as z, 5iHBr3, etc. can be used, and when these raw material gases are used, they are extremely effective in controlling electrical or photoelectric characteristics. This is effective because the content of hydrogen atoms (H) can be easily controlled. When the hydrogen halide or the halogen-substituted silicon hydride is used, hydrogen atoms are also introduced at the same time as the halogen atoms, which is particularly effective.

In order to form a layer consisting of a-S i (Ht A silicon compound gas containing halogen atoms may be introduced into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as H2 or a gas such as the above-mentioned 7-7, is introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gas. Just do it.

For example, in the case of the reactive sputtering method, a Si target is used, and a plasma atmosphere is created by introducing a gas for introducing halogen atoms and H2 gas, including inert gases such as Le and Ar as necessary, into the deposition chamber. A layer of a-8i (H,X) is formed on the support by sputtering the Si target.

In order to form a layer composed of a-5iGe (H, A source gas for supplying Ge and a source gas for supplying hydrogen atoms (H) and/or halogen atoms (X) capable of supplying hydrogen atoms (H) or/and halogen atoms (X) are placed in a deposition chamber whose interior can be depressurized. is introduced into the atmosphere at a desired gas pressure, and the a-
A layer composed of 8iGe(H,X) is formed.

Substances that can be used as a raw material gas for supplying Si, a raw material gas for supplying halogen atoms, and a raw material gas for supplying hydrogen atoms include those used when forming the layer composed of the above-mentioned a-8i (H, X). What you have is used as is.

In addition, the substances that can be the raw material gas for supplying Ge include GeH4, G e 2 Hs, ce3H8, Qe4
H+osGesH+zs G45Ht4s GetH+
5) Germanium hydride in gaseous state or gasifiable, such as Ge8HI8\Ge9H20, can be used.

In particular, from the viewpoint of ease of handling during layer creation work and good Ge supply efficiency, GeH4, ce2I (6, and Ge3H
8 is preferred.

a-5iGe (H,X) by sputtering method
To form a layer consisting of a silicon target and a germanium target, or a silicon target and a germanium target, sputtering is performed in a desired gas atmosphere. It is done by

a-5iQe(H
, heat and evaporate by method or electron beam method (E, B, method), etc.
This can be done by passing the flying evaporates through the desired gas plasma atmosphere.

In both the sputtering method and the ion blating method, in order to contain halogen atoms in the layer to be formed, the above-mentioned halogenide or silicon compound gas containing halogen atoms is introduced into the deposition chamber. Then, a plasma atmosphere of the gas may be formed. In addition, when introducing hydrogen atoms, a raw material gas for supplying hydrogen atoms, such as F2 or the above gases such as hydrogenated silanes and/or germanium hydride, is introduced into the deposition chamber for sputtering. What is necessary is to form a plasma atmosphere of the following gases. Further, effective raw material gases for supplying halogen atoms include the aforementioned halides and halogen-containing silicon compounds, and in addition, HF.

HClXHBr, HI, etc.)s hydrogen chloride, 5iH
2Fz, 5iHzlz, 5i) (2C1z, 5iHCt
Halogen-substituted silicon hydride such as 3.5iH2Brz, 5iHBr:+, and GeHF3, GeH2Fz, GeH
3F, GeHCt3, GeHzC/-z, GeHs
C1%GeHBr3, GeHzBrz, Ge13r4
, GeH, GeHzIz, GeI (3I, etc.), GeF4, Ge(
: t4, Ge13r4, GeI4, GeF2, Ge
Gaseous or gasifiable materials such as germanium halides such as C42, GeBr2, G e I z etc. can also be used as effective starting materials.

To form a photoreceptive layer composed of amorphous silicon containing tin atoms (hereinafter referred to as ra-8iSn(H,X)J) using a glow discharge method, a sputtering method, or an ion blating method. is the above a
-5iGe (H,X), the starting material for supplying germanium atoms is
n) By using it in place of the starting material for supply and incorporating it in the layer to be formed in a controlled amount.

Substances that can serve as raw material gas for supplying tin atoms (Sn) include tin hydride (SnH4), 5nFz, 5nF
4.5nC1z, 5nC64, 5n13r 2.5n1
3r 4.5n Iz, SnI4, etc. can be used in a gaseous state or can be gasified, such as tin halides,
When tin halide is used, it is particularly effective because a layer composed of a-8i containing halogen atoms can be formed on a predetermined support.

Among these, 5nCt4 is preferable from the viewpoint of ease of handling during layer creation work and good Sn supply efficiency.

When 3n+::t4 is used as a starting material for supplying tin atoms (Sn), in order to gasify it, solid 5nC14 is heated and an inert gas such as Ar Bubbling is preferably performed using an inert gas, and the gas thus generated is introduced at a desired gas pressure into a deposition chamber whose internal pressure is reduced.

a-8i (H,X) or a-8i (H,X) or a-
To form a layer composed of an amorphous material in which 3i(Ge, 5n) (H,
a-8i (H, X) or a-8i (Ge, Sn/) (
When forming a layer of H, The substance can be converted into the above-mentioned a-5i(H,X) or a-8i (
This is done by using them in conjunction with the starting materials for the formation of Ge,5n)(H,X) to control their inclusion in the layer being formed.

For example, using the glow discharge method, atoms (0, C.

A layer composed of a-8i (H,X) containing atoms (N), or a-8i (Ge,
To form a layer composed of Sn)(H,X),
A layer composed of the above-mentioned a-3i (H, X) or a-3i
When forming a layer composed of (Ge, 5n) (H, X), the starting material for introducing atoms (0, C, N) is a-
8i (H,X') or a-Si (Ge,
This is done by using them together with the starting materials for the formation of Sn )(H,X) to control their inclusion in the layer being formed.

As a starting material for introducing atoms (0, C, N), most gaseous substances or substances that can be gasified can be used as a starting material for introducing atoms (0, C, N). can be used.

Specifically, as a starting material for introducing oxygen atoms (O),
For example, oxygen (02), ozone (03), -nitrogen oxide (
N02), -nitrogen dioxide (N20), nitrogen sesquioxide (N
20, trinitrogen tetroxide (N204), nitrogen sesquioxide (N
20S), nitrogen dioxide (N-03), silicon atom (Si), oxygen atom (0), and hydrogen atom (H) as constituent atoms, for example, zinloxane (HsSiO3iH3)
, trisiloxane (X5iO3iH30Si)L+), and carbon atoms (starting materials for introducing J include, for example, methane (CH4), ethane (C2H6), propane (C3H8), butane(
Saturated hydrocarbons having 1 to 5 carbon atoms such as n-(:4Hto), pentane (C5HI2), ethylene (C2H4), propylene (03H6), butene-1 (C4H8), butene-2 (04H8), imbutylene ( C4H8), ethylene hydrocarbons having 2 to 5 carbon atoms such as pentene (CsH+o), acetylene ('C2H2), methylacetylene (
C3H4'), butyne (C4H6), and other acetylenic hydrocarbons having 2 to 4 carbon atoms, and examples of starting materials for introducing nitrogen atoms (N) include nitrogen (N2), ammonia (NH3), Hydrazine (H2NNH2), hydrogen azide (HN3.), ammonium azide (NH4N
3), nitrogen trifluoride (F3N), nitrogen tetrafluoride CF4N)
etc.

For example, using a glow discharge method, sputtering method, or ion blating method, a-Si (H,X) or a-8i (G
e, 5n) (H, X), the above-mentioned a -5i (H,
(Ge, Sn) (H, X) When forming a layer composed of (Ge, Sn) (H, 5n) (H,
X) By using them together with the starting materials for the formation and controlling their amount in the layer to be formed.

Specifically, as starting materials for introducing boron atoms, B2H6, B4HIO, BsHs, B2H6, B4HIO, BsHs,
sH], B6HIO, B6HI2, B6HI4, and boron halides such as BF3, B C-13, B B r 3, and the like. In addition, ALCL 3
, GaC43, Ga(CH3)z, InCl3, TtC
l 3 etc. may also be mentioned.

As a starting material for introducing a group Ⅰ atom, specifically for introducing a phosphorus atom, hydrogen ratios such as PH3, P2H4, PH
4I, PF3, PFs, PCl3, PC45, pBr
Examples include halogen ratios such as 3, PBrs, and PI3.

In addition, A3H3, ASF3, AsCl2, A3Br3
, AsF5, SbH3, SbF3, SbF5.5bCt
3.5bC45, BiH3, B1C43, B1Br3
etc. can also be mentioned as effective starting materials for introducing Group V atoms.

As described above, the first layer of the light receiving member of the present invention is formed using a glow discharge method, a sputtering method, etc., and the germanium atoms and/or tin atoms contained in the first layer, Group atom or Group Ⅰ atom, oxygen atom, carbon atom or nitrogen atom, or hydrogen atom or/and...
The content of each rogen atom is controlled by controlling the gas flow rate of each starting material for supplying atoms flowing into the deposition chamber or the gas flow rate ratio between the starting materials for supplying atoms.

Furthermore, conditions such as the support temperature, gas pressure in the deposition chamber, and discharge power during the formation of the first layer of the light-receiving member of the present invention are important factors in order to obtain a light-receiving member having desired characteristics. It is selected as appropriate, taking into account the function of the layer to be formed. Furthermore, since these layer formation conditions may differ depending on the type and amount of each of the atoms mentioned above to be contained in the second layer, they are determined by taking into consideration the type and amount of the atoms to be contained. There is also a need to do so.

Specifically, when forming a layer consisting of a-8i (H, 50
The temperature is preferably 50 to 250°C, particularly preferably 50 to 250°C. The gas pressure in the deposition chamber is usually 0.01 to I Tor.
r, particularly preferably Iri O, 1 to 0.5 T
orr. Mata, discharge power 0.005~50W
/-, but more preferably 0.01
~30 W/m, particularly preferably 0.01-20 W
/': Set to td.

When forming a layer consisting of a''5iGe (H,X), or a layer consisting of a-3iGe (H, In the case of formation, the support temperature is usually 50 to 350°C, more preferably 50 to 300°C.
℃, particularly preferably 100 to 300℃. and,
The gas pressure in the deposition chamber is usually 0.01 to 5 Torr, preferably 0.001 to 3 Torr, particularly preferably 0.1 to 1 Torr.

Further, the discharge power is usually 0.005 to 50 W/ffl, but preferably 0.01 to 30 vJA.
and particularly preferably from 0.01 to 20 W/crl.

However, the specific conditions for layer formation, such as support temperature, discharge power, and gas pressure in the deposition chamber, are usually difficult to determine individually. Therefore, in order to form an amorphous material layer with desired characteristics, it is desirable to determine optimal conditions for layer formation based on mutual and organic relationships.

By the way, the distribution state of germanium atoms and/or tin atoms, oxygen atoms, carbon atoms or nitrogen atoms, group (III) atoms or group (III) atoms, or hydrogen atoms and/or halogen atoms contained in the first layer of the present invention In order to make the photosensitive layer uniform, it is necessary to keep the above-mentioned conditions constant when forming the photosensitive layer.

Further, in the present invention, when forming the first layer, germanium atoms and/or tin atoms contained in the layer,
In order to form a layer having a desired distribution state in the layer thickness direction by changing the distribution concentration of oxygen atoms, carbon atoms, nitrogen atoms, or group II atoms or group V atoms in the layer thickness direction, a glow discharge method is used. When using germanium atoms and/or tin atoms, oxygen atoms, carbon atoms, nitrogen atoms, or gases of starting materials for introducing Group I atoms or Group V atoms into the deposition chamber. The flow rate is changed as appropriate according to a desired rate of change, and other conditions are kept constant. In order to change the gas flow rate, the opening of a predetermined needle pulp provided in the middle of the gas flow path system is gradually opened by some commonly used method, such as manually or by an externally driven motor. All you have to do is perform an operation to change it. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve.

In addition, when forming the first layer using a sputtering method, the distribution concentration in the layer thickness direction of germanium atoms, tin atoms, oxygen atoms, carbon atoms, nitrogen atoms, or group In order to form a desired distribution state in the layer thickness direction, germanium atoms, tin atoms, oxygen atoms, carbon atoms, nitrogen atoms, group III atoms, or The starting material for introducing Group (1) atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is varied according to the desired rate of change.

Second layer The second layer 103 of the light-receiving member of the present invention is a layer provided on the above-described first layer 102 and having a free surface 104, that is, a surface layer, and the free surface of the light-receiving layer. In addition to exhibiting a function of reducing reflection at 104 and increasing transmittance, that is, an antireflection function, the light-receiving member has various characteristics such as moisture resistance, continuous repeated use characteristics, electrical pressure resistance, usage environmental friendliness, and durability. It performs the function of improving the

In addition to the condition that the material forming the second layer exhibits an excellent antireflection function and the function of improving the various properties described above, the material for forming the second layer is The first layer should not have a negative effect on conductivity, should have electrophotographic properties such as resistance above a certain level, should have excellent solvent resistance when liquid development is used, and should be formed immediately. Materials that meet these conditions and can be used effectively include, for example, MgF2, At203, ZrO2, TiO+, and zns.
XCe02, CeF3, TazOs, AlF2, NaF
Examples include at least one selected from inorganic fluorides, inorganic oxides, and inorganic sulfides.

In addition, in order to efficiently achieve antireflection, the refractive index of the second layer forming material is n, and
When the refractive index of the constituent layers of the first layer on which the second layer is directly laminated is n, it is desirable to select and use a material that satisfies the following formula:

Hereinafter, the above-mentioned inorganic fluorides, inorganic oxides and inorganic sulfides,
Or give some examples of refractive indices of mixtures thereof, but for these refractive indices, the type of layer to be created,
Needless to say, it varies somewhat depending on conditions and the like. Note that the numbers in parentheses represent the refractive index.

Zr0z (2,00'), Ti02 (2,26), Z
rO2/Ti02=6/1(2,09), Ti0z/Z
r0z = 3/1 (2,20'), Ge02(
2,23), zns (2,24), AtzO3 (1,
63), CeF3(1,60), Atze3/Zr0
2=1/1 (1,68), MgF2(1,38) Furthermore, the thickness of the second layer is determined by d1 the refractive index of the material constituting the second layer. The wavelength of n1 irradiation light is λ
In this case, it is desirable to satisfy the following formula: Specifically, when the wavelength of the exposure light is in the wavelength range from near infrared to visible light, the thickness of the second layer is preferably 0.05 to 2 μm.

Regarding the formation of the second layer, since it is necessary to control the layer thickness at an optical level in order to efficiently achieve the object of the present invention, vapor deposition method, sputtering method, plasma vapor phase method can be used. , a photo CVD method, a thermal CVD method, etc. are used. It goes without saying that these forming methods are appropriately selected and used in consideration of factors such as the type of material forming the surface layer, manufacturing conditions, the level of equipment capital investment, and the manufacturing scale.

Incidentally, from the viewpoint of ease of operation, ease of setting conditions, etc., it is preferable to employ a sputtering method when the above-mentioned inorganic compound is used to form the surface layer. That is, by using an inorganic compound for forming a surface layer as a target, using Ar gas as a sputtering gas, and causing glow discharge to sputter the inorganic compound, the inorganic compound is sputtered onto the support on which the first layer is formed. , deposit the second layer.

By having the above-described layer structure, the light-receiving member of the present invention can solve all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon. Even when laser light, which is light, is used as a light source, it is possible to significantly prevent the appearance of interference fringe patterns in formed images due to interference phenomena, and to form extremely high-quality visible images.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. It also exhibits extremely aggressive electrical, optical, photoconductive properties, electrical voltage resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear no-ft tones, and high resolution.

〔Example〕

Hereinafter, the present invention will be explained in more detail according to Examples 1 to 11, but the present invention is not limited thereto.

In each example, the first layer was formed using a glow discharge method, and the second layer was formed using a sputtering method. FIG. 25 shows an apparatus for manufacturing a light-receiving member of the present invention.

2502.2503.2504.2505.25 in the diagram
The raw material gas for forming each layer of the present invention is sealed in the gas cylinder No. 06, and as an example, 25021d SiF4 gas (purity 99.99
9%) cylinder, 2503 B2H6 gas diluted with B2 (purity 99.999%, abbreviated as B2H6/H2 above).

) cylinder, 2504 is CH4 gas (purity 99.999%
) cylinder, 2505 GeF4 gas (purity 99.999
%) cylinder, 2506 is an inert gas (He) cylinder. And 2506' is a closed container containing 5nC2+.

To allow these gases to flow into the reaction chamber 2501 Vc, valves 2522 to 252 of gas cylinders 2502 to 2506 are used.
6. Check that the leak valve 2535 is closed, and also close the inflow valves 2512 to 2516 and the outflow valve 25.
After confirming that 17 to 2521 and auxiliary valves 2532 and 2533 are open, first open the main valve 2534 to exhaust the reaction chamber 2501 and gas piping. Next, an example of forming the first layer and the second layer on the vacuum At cylinder 2537 will be described below.

First, SiF4 gas from gas pump/be 2502, B2H6/B2 gas from gas cylinder 2503, gas cylinder 25
CH4 gas from 04, GeF4 from gas cylinder 2505
Valve 2522.2523.2524.2 for each gas
Open 525 and outlet pressure gauge 2527.2528.25
Adjust the pressure of 29.2530 to lKd/leak, gradually open the inflow valve 2512.2513.2514.2515, and open the mask controller 2507.2508.25.
09.251o. Subsequently, the outflow valves 2517, 2518, 2519, and 2520 and the auxiliary valve 2532 are gradually opened to allow gas to flow into the reaction chamber 2501.

At this time, SiF4 gas flow rate, GeF4 gas flow rate, CH
4 gas flow rate, the outflow pulp 2517.2518.2519 so that the ratio of B2H6 / Hz gas flow rate is the desired value.
．． 2520 and the opening of the main valve 2534 while checking the reading on the vacuum gauge 2536 so that the pressure inside the reaction chamber 2501 reaches the desired value. After confirming that the temperature of the substrate warper 2537 is set to a temperature in the range of 50 to 400°C by the heating heater 2538, the power source 254o is set to the desired power and a glow discharge is caused in the reaction chamber 2501. At the same time, using a microcomputer (not shown), according to a flow rate change line designed in advance, S i F< gas, GeF'4 gas, CH4 gas, and B 2 Hs /H
While controlling the gas flow rate of the two gases, the base cylinder 25
First, a layer 102' containing silicon atoms, germanium atoms, carbon atoms, and boron atoms is formed on the third layer. When the layer 102' has been formed to the desired thickness, the outflow valves 2518 and 2520 are completely closed and the glow discharge is continued in the same manner, except for changing the discharge conditions as necessary, to form a layer over the layer 102'. In addition, a layer 102'' substantially free of germanium atoms can be formed.

In addition, when containing tin atoms in the first layer and using a gas containing Sn (::A4) as a starting material, the solid 5
The nCL4 is heated using a heating means (not shown), and an inert gas such as Ar% He is blown into the 5nCA4 from an inert gas tank 2506 to cause bubbling. The generated 5nC14 gas is the aforementioned SiF4 gas, GeF4 gas, CH4 gas, B2
It is made to flow into the reaction chamber by the same procedure as H6/B2 gas, etc.

After forming the first layer by the glow discharge method as described above, the valves for each source gas and diluent gas used to form the first layer are closed, and then the leak valve 2535 is gradually closed. The deposition apparatus is opened to return to atmospheric pressure, and then argon gas is used to clean the interior of the deposition chamber.

Next, a target made of an inorganic compound for forming a second layer is spread over the cathode electrode (not shown), the leak pulp 2535 is closed and the pressure inside the deposition apparatus is reduced, and then argon gas is introduced into the deposition apparatus. 0.015~O, Q2 Torr
Introduce it until it reaches a certain level.

A glow discharge is generated in these areas using high frequency power (approximately 150 to 170 W), and an inorganic compound is sputtered to deposit a second layer on the already formed first layer.

Test Example A SUS stainless steel rigid sphere with a diameter of 2 mm was used to treat the surface of an aluminum alloy cylinder (diameter 60 mm, length 298 mm) to form irregularities using the apparatus shown in FIG. 6 above.

When we investigated the relationship between the diameter R' of the true sphere, the falling height h, and the width of the curvature R1 of the trace depression, we found that the curvature R and width of the trace depression are as follows.
It was confirmed that it is determined by conditions such as the diameter π of the true sphere and the falling height h. In addition, it was confirmed that the pitch of the trace depressions (density of the trace depressions, pinch of unevenness) can be adjusted to the desired pitch by controlling the rotational speed and number of cylinders or the amount of fall of the rigid true sphere. It was done.

Example 1 The surface of an aluminum alloy cylinder was treated in the same manner as in the test example, and D and No. 101 to 1 shown in the upper column of Table 1A were prepared.
06) was obtained.

Next, the At support (cylinder No. 101 to 106)
A first layer was formed thereon using the manufacturing apparatus shown in FIG. 25 under the conditions shown in Table 1B below.

Thereafter, a second layer having a layer thickness of 0.293 μm was formed using Zr0z (refractive index 2.00) as a material for forming the second layer.

These light-receiving members were exposed using an image exposure apparatus shown in FIG. 26 by irradiating a laser beam with a wavelength of 780 nm and a spot diameter of 80 μm, and were developed and transferred to obtain an image. The occurrence of interference fringes in the obtained image was as shown in the lower column of Table 1A.

Note that FIG. 26(A) is a schematic plan view schematically showing the entire exposure apparatus, and FIG. 26(B) is a schematic side view schematically showing the entire exposure apparatus. In the figure, 2601 is a light receiving member, 2602 is a semiconductor laser, 2603 is an fθ lens, and 2604 is a polygon mirror.

Next, as a comparison, an aluminum alloy cylinder (No.
107) (Diameter 60mm, length 298mm.

Using an uneven pitch of 100 μm 1 uneven depth of 3 μm),
A light receiving member was produced in the same manner as described above.

When the obtained light-receiving member was observed under an electron microscope, it was found that the support surface, the layer interface of the light-receiving layer, and the surface of the light-receiving layer were parallel to each other. Using this light-receiving member, images were formed in the same manner as described above, and the obtained images were evaluated in the same manner as described above. The results were as shown in the lower column of Table 1A.

Example 2 A light-receiving layer was formed on an At support (cylinder Nos. 101 to 107) in the same manner as in Example 1, except that the first layer was formed according to the layer forming conditions shown in Table 2B. Note that the gas flow rates of the 5jF4 gas and GeF4 gas during the first layer formation were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG.

When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 2A.

Example 3 At support used in Example 1 (Nlinder No. 105
), a first layer was formed under the layer forming conditions shown in Table 3A. Note that the boron atoms contained in the first layer were introduced under the same conditions as in Example 2.

In addition, GeH4 gas and 5iE (
The gas flow rates of 4 gas, H2 gas and NH3 gas are as follows:
It was automatically adjusted by microcomputer control according to the flow rate change curve shown in the figure. After forming the first layer, the third
Using the second layer constituent materials (301 to 320) shown in the upper column of Table B, the second layers were formed by sputtering so as to have the layer thicknesses shown in the lower column of Table 3B.

Image formation was performed on the obtained light receiving members (301 to 320) in the same manner as in Example 1.

No interference fringes were observed in any of the images obtained.
And it was of extremely good quality.

Example 4 The first layer was formed on the Aj support (cylinder No. 105) in the same manner as in Example 3, except that the first layer was formed under the layer forming conditions shown in Table 4. Note that Ge F4 gas and S! gas at the time of forming the first layer! F
The gas flow rates of the four gases were automatically adjusted by microcomputer control according to the gas flow rate change diagram shown in FIG. After forming the first layer, second layers (301 to 320) were formed in the same manner as in Example 3.

Image formation was performed on the obtained light receiving members (401 to 420) in the same manner as in Example 1.

No interference fringes were observed in any of the images obtained.
And it was of extremely good quality.

Examples 5 to 11 AA support used in Example 1 (Nlinder N0.103
~106) After forming the first layer on top according to the layer forming conditions shown in Tables 5 to 11, respectively, using the layer constituent materials shown in the upper column of Table 12, respectively, A second layer having a thickness shown in was formed by a sputtering method.

In Examples 5 to 11, the gas used during the first layer formation was automatically adjusted by microcomputer control according to the flow rate change lines shown in FIGS. 30 to 36, respectively. In addition, the boron atoms contained in the first layer are
In each example, as much as 200 ppm was introduced into the entire layer.

When images were formed on these light-receiving members in the same manner as in Example 1, good results similar to those in Example 1 were obtained.

[Summary of effects of the invention]

The light-receiving member of the present invention has the above-described layer structure, and can solve all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon. Even when laser light, which is monochromatic light, is used as a light source, it is possible to significantly prevent the appearance of interference fringes in images formed due to interference phenomena, and to form extremely high-quality visible images.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. It exhibits excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

[Brief explanation of drawings]

FIG. 1 is a diagram schematically showing an example of the light-receiving member of the present invention, and FIGS. 2 and 3 are diagrams for explaining the principle of preventing the generation of interference fringes in the light-receiving member of the present invention. FIG. 2 is a partially enlarged view showing that interference fringes are prevented from occurring in a light-receiving member in which unevenness is formed by spherical trace depressions on the surface of the support, and FIG. 3 is a diagram showing a conventional surface. FIG. 3 is a diagram showing that interference fringes occur in a light-receiving member in which a light-receiving layer is deposited on a regularly roughened support. FIGS. 4 and 5 are schematic diagrams for explaining the uneven shape of the support surface of the light-receiving member of the present invention and the method for producing the uneven shape. FIG. 6 is a diagram schematically showing a configuration example of an apparatus suitable for forming the uneven shape provided on the support of the light-receiving member of the present invention, and FIG. 6(A) is a front view. , 6th
(B) is a longitudinal sectional view. Figures 77 to 15 are diagrams showing the distribution state of germanium atoms or tin atoms in the layer thickness direction in the first layer of the present invention, and Figures 16 to 24 are diagrams showing the distribution state of germanium atoms or tin atoms in the first layer of the present invention. These are diagrams showing the distribution state of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, or group (III) atoms or group (III) atoms in the layer thickness direction. In each diagram, the vertical axis is the first The layer thickness is shown, and the horizontal axis represents the distribution concentration of each atom. 25th
The figure is an example of an apparatus for manufacturing the first layer and second layer of the light-receiving member of the present invention, and is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. FIG. 26 is a diagram illustrating an image exposure apparatus using laser light. 27 to 36 are diagrams showing changes in the gas flow rate ratio in the first layer formation of the present invention, where the vertical axis shows the layer thickness of the first layer, and the horizontal axis shows the gas flow rate of the used gas. There is. Regarding FIGS. 1 to 3, 100... Light receiving member, 101... Support, 102
, 201. 301...first layer, 103, 202, 302.
...Second layer, 104, 203, 303...Free surface, 204, 304...Interface between the -th layer and second layer, 102'...At least one of germanium atoms or tin atoms Containing layer, 102''...Containing neither germanium atoms nor tin atoms Regarding the eyebrows in Figure 4.5, 401, 501...Support, 402, 502...
・Support surface, 403, 503, 503'... Rigid true sphere, 404, 504... Regarding the spherical depression in Fig. 6, 601... Cylinder, 602... Rotating shaft, 603
...Driving means, 604...Drop device, 605...
Rigid sphere, 606...Ball feeder, 607...
- Vibrator, 608... Recovery tank, 609... Ball feeding device, 610... Cleaning device, 611... Cleaning liquid reservoir, 612... Cleaning liquid recovery tank, 613... Drop port Fig. 25 Regarding, 2501...Reaction chamber, 2502-2506...Gas cylinder, 2506'...5nC64 tank, 2507-2
511... Mass flow controller, 2512-251
6... Inflow valve, 2517-2521... Outflow hull 7'', 2522-2526... Valve, 2527-
2531...Pressure regulator, 2532, 2533...
・Auxiliary valve, 2534...Main valve, 2535
...Leak valve, 2536...Vacuum gauge, 2537
... Base cylinder, 2538 ... Heating heater,
2539...Motor, 2540...High frequency power source Regarding Fig. 26, 2601...Light receiving member, 2602...Semiconductor laser, 2603...Fθ lens, 2604...Polygon mirror.

Claims (1)

[Claims] (1) A light-receiving layer consisting of a first layer made of an amorphous material containing silicon atoms and a second layer having an antireflection function on a support. A light-receiving member, wherein the first layer has a multilayer structure including, in order from the support side, a layer containing at least one of germanium atoms or tin atoms, and a layer containing neither germanium atoms nor tin atoms. A light-receiving member, wherein the support surface has an uneven shape formed by a plurality of spherical trace depressions. (2) The light-receiving member according to claim (1), wherein the first layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms. (3) The light-receiving member according to claim (1), wherein the first layer contains a substance that controls conductivity. (4) The light-receiving member according to claim (1), wherein the first layer has as one of the constituent layers a charge injection blocking layer containing a substance that controls conductivity. (5) The light-receiving member according to claim (1), wherein the first layer has a barrier layer as one of the constituent layers. (6) The light-receiving member according to claim (1), wherein the second layer is made of at least one selected from inorganic fluorides, inorganic oxides, and inorganic sulfides. (7) When the refractive index of the substance constituting the second layer is n and the wavelength of the irradiation light is λ, the thickness d of the second layer is calculated by the following formula: d=(λ/4n)m (however, The light-receiving member according to claim 7, which satisfies the following (m is a positive odd number). (8) When the refractive index of the substance constituting the second layer is n, and the refractive index of the amorphous material constituting the first layer in contact with the second layer is n_a, the following formula: n=√ The light-receiving member according to claim (7), which satisfies n_a. (9) The light-receiving member according to claim (1), wherein the plurality of uneven shapes provided on the surface of the support are uneven shapes formed by spherical trace depressions having the same curvature. (10) A plurality of uneven shapes provided on the surface of the support body,
The light-receiving member according to claim 1, wherein the light-receiving member has an uneven shape with spherical trace depressions having the same curvature and the same width. (11) Claim No. 1, wherein the uneven shape on the surface of the support is an uneven shape due to the vestigial depressions of the rigid true spheres obtained by naturally falling a plurality of rigid true spheres onto the surface of the support body.
The light-receiving member described in 2. (12) Claim No. 1, wherein the uneven shape on the surface of the support is an uneven shape due to the trace depressions of the rigid true spheres obtained by dropping rigid true spheres of approximately the same diameter from approximately the same height.
The light-receiving member described in 2. The light-receiving member according to claim (1), wherein the curvature R and width D of the spherical trace depression satisfy the following formula: 0.035≦D/R. (13) The light-receiving member according to claim (14), wherein the width of the spherical trace depression is 500 μm or less. (14) Claim No. 1, wherein the support is a metal body.
) The light-receiving member according to item 1.