JPS6289861A - Method and apparatus for bombardment vapor deposition of thin film - Google Patents
Method and apparatus for bombardment vapor deposition of thin filmInfo
- Publication number
- JPS6289861A JPS6289861A JP22789685A JP22789685A JPS6289861A JP S6289861 A JPS6289861 A JP S6289861A JP 22789685 A JP22789685 A JP 22789685A JP 22789685 A JP22789685 A JP 22789685A JP S6289861 A JPS6289861 A JP S6289861A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- thin film
- laser beam
- base material
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title description 13
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000001704 evaporation Methods 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 13
- 230000007935 neutral effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 30
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims 2
- 230000035939 shock Effects 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 230000004936 stimulating effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 13
- 230000001678 irradiating effect Effects 0.000 abstract description 6
- 230000007257 malfunction Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- 241000286209 Phasianidae Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
（産業上の利用分野）
本発明は、レーザビームを積極的に利用し、特に比較的
少ない活性粒子による薄膜の衝撃でその薄膜の特性を向
上するイオンブレーティング法及びその装置の改良に関
する。
（従来の技術）
現在、基板上に＃膜を形成する技術として、イオンブレ
ーティング法が注目されている。イオンブレーティング
法とは、真空＃后装置内に低圧カスを導入し、電界を印
加してプラズマを起こし、蒸発源から蒸発された粒子を
イオン化する礒楡を持つ、プラズマを利用した蒸沿法で
あって、辿′帛、蒸発ルツボと基材との間に電極が設け
られており、イオン化されだ蒸看′＃質を基材表面に射
突させる原子論的薄膜形成装置からなっている。この方
法によれば、蒸発粒子中にかなυのイオンが含まれてい
るため、物理的に加速、集束が可能で基板に対する密着
性（付着強度〕が向上し、また酸素。
窒素、メタンなどのガスプラズマを利用すれば、これら
の化合物膜を基板上に付着できるなど、従来の真空蒸着
法に比べて幅広い利用法があるなどの長所を有している
。
第２区は、従来のイオンブレーティング装置の一例を示
ｆ構成図である。図において、蒸着物質ｌはルツボ２に
収容され、抵抗加熱又は電子ビーム加熱によシ蒸発させ
られる蒸着物質を自在に選択できること、放電を容易に
するための電子を供給すること及び蒸発速度の調節が容
易であること等の理由で、加熱手段として電子ビームが
使用されることが多い。図示された例でも、フィラメン
ト３による電子ビーム加熱方式を用いている。電極４は
、蒸着物質１の蒸気又はガスのイオン化を目的としてお
シ、直流電界或いは高周波電界によりグロー放電を起こ
し、蒸発原子や導入ガスのイオン化を行なっている。基
板５はチャンバ６から絶縁して支持されておシ、バイア
スを印加することが可能な構造となっている。なお、図
中、７は篩周波電源、８はマツチングボックス、９はシ
ャッタ、ｌＯは直に電源をそれぞれ示している。
この棟の装置では、金属や金属の各拙化合′＋／Ａ薄膜
を棟々の基板に密層性良く形成することが可能である。
（発明が解決しようとする問題点）
上記した従来のイオンブレーティング法においては、プ
ラズマ放′框を作るのに＠に電界又は高周波電界が用い
られるが、高周波放電の場合は、商周波亀力を装置内に
有効に供給するため、マツチレグ操作が必要であシ、ま
たマツチングは、カス圧の差による放電抵抗の変動幅と
コイルの形状及び装置内の幾行字的配置により決矩され
るので、真空槽内のカス圧力によシマッチングがずれ、
放電のきっかけを作る、つまりトリガーしなければ放電
が制御できない圧力もある。又、直流クロー放電の場合
も、尚周波放電の場合と同じ難点を持ち、真空槽内での
異状放電が真空槽外へ電波として放たれてそれが計器等
を誤動作させるノイズ源となる場合がめったし、又異状
放電により基板以外のホルダー等から何らかの物質が周
わシ込み、基板に付着するという問題点があった。
（問題点を解決するための手段）
本発明は、上記した従来技術の問題点を解決するために
、真空に維持されたチャンバ内に基材を設け、薄膜を形
成する蒸着可能な蒸気を、蒸発源から真空内を経て前記
基材上に薄膜を生じるように接触させ、前記薄膜に、十
分な数及びエネルギーのレーザビーム源等の他の源から
の活性ある原子粒子を含む加速された粒子で衝撃を与え
ること（蒸気方法）を特徴とし、該方法を実施するため
の装置として、真空に維持されたチャンバ内に基材と該
基材上に薄膜を形成する蒸着可能な蒸気詠とを設け、上
記基材にレーザビームを照射するレーザビーム源を、通
常上記チャンバの側面に設けたことを特徴としている。
なお、実施に当っては上記レーザビームは走査用ミラー
を介して基材に照射される。
（作 用）
上記のように構成された装置において、チャンバ内に基
材（基板）を取付け、蒸発源（蒸発物（(Industrial Application Field) The present invention relates to an ion blating method that actively utilizes a laser beam to improve the properties of a thin film by bombarding the thin film with particularly a relatively small amount of active particles, and improvements to the apparatus thereof. (Prior Art) Currently, the ion blating method is attracting attention as a technique for forming a # film on a substrate. The ion blating method is an evaporation method using plasma, in which low-pressure scum is introduced into a vacuum device, an electric field is applied to generate plasma, and the particles evaporated from the evaporation source are ionized. It consists of an atomistic thin film forming device in which an electrode is provided between the evaporation crucible and the base material, and ionized vapor particles are projected onto the surface of the base material. . According to this method, since the evaporated particles contain Kana υ ions, they can be physically accelerated and focused, improving adhesion (adhesion strength) to the substrate, and also ions such as oxygen, nitrogen, methane, etc. Gas plasma has the advantage of being able to deposit films of these compounds on substrates, and has a wider range of uses than conventional vacuum evaporation methods. An example of a rating apparatus is shown in FIG. An electron beam is often used as a heating means for reasons such as supplying electrons for heating and easy adjustment of the evaporation rate.In the illustrated example, an electron beam heating method using a filament 3 is also used. The electrode 4 is used for the purpose of ionizing the vapor or gas of the vapor deposition substance 1.The electrode 4 causes a glow discharge using a DC electric field or a high frequency electric field to ionize the evaporated atoms and the introduced gas.The substrate 5 is connected to the chamber 6. It has a structure that allows it to be supported insulated from the oscilloscope and to apply a bias.In the figure, 7 is a sieve frequency power source, 8 is a matching box, 9 is a shutter, and 1O is a direct power source. With the equipment in this block, it is possible to form thin films of metals and metal compounds '+/A with good density on substrates in each block. (Problem to be solved by the invention) Point) In the conventional ion blating method described above, an electric field or a high-frequency electric field is used to create a plasma discharge box, but in the case of high-frequency discharge, a commercial frequency force is effectively supplied into the device. Therefore, a match leg operation is required, and since matching is determined by the fluctuation range of discharge resistance due to the difference in scum pressure, the shape of the coil, and the linear arrangement within the device, the scum pressure in the vacuum chamber The matching is off,
There are also pressures that cannot be controlled without triggering the discharge. In addition, DC claw discharge has the same drawbacks as frequency discharge, and abnormal discharge inside the vacuum chamber may be emitted as radio waves outside the vacuum chamber, which may become a noise source that causes instruments to malfunction. There is also a problem in that some substances from other parts than the substrate, such as the holder, are drawn around and adhered to the substrate due to abnormal discharge. (Means for Solving the Problems) In order to solve the problems of the prior art described above, the present invention provides a base material in a chamber maintained in vacuum, and evaporates vapor that can be used to form a thin film. contacting the substrate through a vacuum from an evaporation source to form a thin film on the substrate, wherein a sufficient number and energy of accelerated particles containing active atomic particles from another source, such as a laser beam source, are applied to the thin film. (steam method), and as an apparatus for carrying out the method, a base material and a vapor depositable vapor source that forms a thin film on the base material are placed in a chamber maintained in a vacuum. A laser beam source for irradiating the base material with a laser beam is usually provided on a side surface of the chamber. In addition, in implementation, the laser beam is irradiated onto the base material via a scanning mirror. (Function) In the apparatus configured as described above, a base material (substrate) is installed in the chamber, and an evaporation source (evaporation material) is installed in the chamber.
【ジ）を装入後
、基材に含まれるカスを放逐するために所定温度まで加
熱しつつチャンバ内を排気し、所定の真空度まで排気し
た鎌、０２カス等を導入してチャンバ内をＲ【定圧力に
保つ。
次に、レーザ光をチャンバ内に導入し、基材に衝撃させ
ると同時に１ルツボ内の蒸発源を加熱して蒸発させ、蒸
着を開始する。所定の肉厚の＃膜を形成した後、蒸発源
からの蒸発物質をシャッタ等によって遮断し、任意の時
間レーザビームを照射した後、これを遮断すると共に、
０２ガス等の導入を中止し、チャンバ内を適当な時間真
空に引いた恢、空気又はガスを導入してチャンバ内を大
気圧としてチャンバから基材を取り出す。
上記のように、基材にレーザビームを照射している間、
基紀表面は浄化され、蒸発粒子は刺戟されてイオン化さ
れる。
（実施例）
次に、本発明の方法を実施する装置を図面と共に説明す
る。
第１図は、本発明の一実施例を示す薄膜衝撃蒸着装置の
概略構成図である。なお、第２図と同一ないし同類部分
には同一符号を付して、その詳し−い説明は省略する。
図において、チャンバ６内にレーザイオンブレーティン
グ技術に必要な機材が総べて納められている。即ち、基
板５は、基板ホルダ１７の下面に、該ホルダ１７に収納
できる大きさのＳｉウェハ、ガラス等からなる基板とし
て固定用ビン１８で固定されている。ノ・ロゲンランプ
１９、シーズヒータ２０で基板５を加熱し、熱電対２１
でチャンバ６内の温度を検出する方法を採っている。
蒸発物質１は、水冷パイプ２２により冷却されたルツボ
２内に入れられ、フィラメント３による電子ビームを照
射して該物質を蒸発せしめる加熱方法をとっている。
光源であるＡｒ−Ｃｗレーザ発生装置（レーザ光源）１
６は、チャンバ６の側面に配置されておシ、レーザ光は
ブランキング用シャッタ１５が開かれた時、レンズ１４
を通過した後、Ｘ方向及びＹ方向の走査用ミラー１２．
１３で反射され、石英等で作製されたボート１１からチ
ャンバ６内に導入される。導入されたレーザ光は、基板
５に入射する。
排気は、油回転ポンプ２３、メカニカルブースタポンプ
２４と油拡散ポンプ２５で行われる。本引きの際に油拡
散ポンプ２５からの油によるチャンバ６内の汚染を防ぐ
ため、途中にバッフル板３０、液体窒素系トラップ２６
が設けられている。
なお図中２９は主バルブ、２８は粗引用バルブ、２７は
補助バルブであシ、３１は基板５表面に形成される膜厚
及び蒸発速度を検出するため水晶振動子からなる膜厚検
出器である。
次に、上記のように構成された本装置を用いた薄膜形成
工程を説明する。
まず、リークバルブ３２を開いて、チャンバ６内にＡｉ
ｒ又は各種ガスを導入し、チャンバ６内を大気圧にする
。チャンバ６を開いて基板５を基板ホルダ１７に装置し
、ルツボ２へ蒸発物質１を充填後、チャンバ６を閉じ、
粗引き用バルブ２８を開いてチャンバ６内を０．５ Ｔ
ａｒｔ 程度まで排気し、基板回転機構３４を運転させ
、ノ・ロゲンランプ１９、シーズヒータ２０で基板５を
所定の温度まで加熱し、つづいて粗引き用バルブ２８を
閉じ、主バルブ２９を開いて油拡散ポンプ２５で排気を
行う。２ Ｘ １Ｏ−５Ｔｏｒｒ以下まで排気を行った
仮、所定の温度まで上昇したことを確認し、可変リーク
バルブ３３から例えば０２ガスを導入し、チャンバ６内
を所定の圧力に保つ。
次に、レーザ光のブランキング用シャッタ１５を開いて
、チャンバ６内にレーザ光をレンズ１４、ミラー１３，
１２、ボート１１を紅て尋人し、基板５にレーザビーム
を伽ＩＫすると同時に、ルツボ２内の蒸着物質１を加熱
し蒸発させ、シャッター９を１４ｉｉいて蒸着を開始す
る。蒸着膜厚は、チャンバ６内に設置された水晶振動子
からなる膜厚検出器３１によりモニターされる。Ｐ９Ｔ
雉の膜厚のγｒ、・；）民を形成した後、／ナツタ−９
を閉じ、任意の時間レーザビームを照射した後、ブラン
キング用シャッタ１５を閉じると共にハロゲンランプ１
９、シーズヒータ２０、基板回転機構３４を停止し、可
変リークバルブ３３からのガス導入を止め、チャンバ６
内を真空に引く。適当な時間真空に引いた仮、リークバ
ルブ３２からＡｉｒ又はガスを尋人してチャンバ６内を
大気圧とし、基板５を取り出す。
上記のレーザビームは、レンズ等で広げず、し０えばポ
リゴンミラーのようなミラー１２で、レーザビームスポ
ットをセンシングさせる方法がよく、また、レーザビー
ムを真空チャンバ内へ導くため真空チャンバへ設けるべ
き覗き応１１（″′１１石英の外、レーザビームのパワ
ーによシ影響を受けにくい例えばＧｅのようなタイプの
もの、がよい。
この実施例によれば、基板５にレーザビームが照射され
るので、該基板５は刺戟され、その表面は浄化され、ま
た原発粒子は刺戟される。従って、従来のようにプラズ
マ放電を作るために必要だった高周波電界や直流電界が
不要となるので、これらの両電界が惹き起こす蒸箔装置
の娯動作をなくすことができる。
なお、本発明は上述した装置例に限定されるものではな
く、その要旨を逸脱しない範囲で独々変形して実施する
ことができる。例えば、前記レーザ光の樵類はアルゴン
レーザに限るものではなく、ｆＲ素レーザなどを利用す
ると、酸化物質等をイオン化することができる。またそ
の出力やビーム径等も仕様に応じて適宜定めればよい。
なお、レーザビーム源に代えて、中性ビームを出力する
ようなビーム源を使用することも可能である。
さらに、蒸着物質にも各種の物質が適用できることは勿
論であシ、また排気系にも、各種の排気【真窒】ポンプ
を適用することができる。
（発明の効果）
以上説明したように、本発明によれば、レーザビーム又
は中性ビームの熱射により基材を刺戟させるようにして
いるので、高周波電界や直流電界を用いる必要がなく、
これらの高周波電界や直流電界に起因する蒸着装置の誤
動作をなくすことができる。従って、長期間の安定動作
を計ることができ、蒸着装置の稼動率を大幅に向上させ
ることができる。
また、高周波励起や直６ｉＥ励起やイオンビーム等によ
らずレーザビーム又は中性ビームを利用しているので、
基板のみのクリーニングが可能となり、またビーム密度
を大きくする必要がないので、プラスチックやガラス面
等のクリーニングに効果がある。After charging [J], the inside of the chamber is evacuated while heating it to a predetermined temperature to expel the scum contained in the base material, and a sickle, 02 scum, etc. that has been evacuated to a predetermined degree of vacuum is introduced to exhaust the inside of the chamber. R [Keep at constant pressure. Next, a laser beam is introduced into the chamber to impact the base material, and at the same time, the evaporation source in one crucible is heated to evaporate, thereby starting evaporation. After forming a # film of a predetermined thickness, the evaporation material from the evaporation source is blocked by a shutter, etc., and after irradiating the laser beam for an arbitrary time, this is blocked, and
The introduction of 02 gas, etc. is stopped, and the inside of the chamber is evacuated for an appropriate time, and then air or gas is introduced to bring the inside of the chamber to atmospheric pressure, and the substrate is taken out from the chamber. As mentioned above, while irradiating the substrate with the laser beam,
The basic surface is purified and the evaporated particles are stimulated and ionized. (Example) Next, an apparatus for carrying out the method of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of a thin film impact vapor deposition apparatus showing an embodiment of the present invention. Note that the same or similar parts as in FIG. 2 are given the same reference numerals, and detailed explanation thereof will be omitted. In the figure, all the equipment necessary for laser ion blating technology is housed in a chamber 6. That is, the substrate 5 is fixed to the lower surface of the substrate holder 17 with a fixing pin 18 as a substrate made of a Si wafer, glass, etc., and of a size that can be accommodated in the holder 17. The substrate 5 is heated with a heat exchanger lamp 19 and a sheathed heater 20, and a thermocouple 21 is heated.
A method of detecting the temperature inside the chamber 6 is adopted. The evaporated substance 1 is placed in a crucible 2 cooled by a water-cooled pipe 22, and heated by irradiating the substance with an electron beam from a filament 3 to evaporate the substance. Ar-Cw laser generator (laser light source) 1 as a light source
6 is arranged on the side of the chamber 6, and when the blanking shutter 15 is opened, the laser beam is emitted from the lens 14.
After passing through the mirror 12 for scanning in the X direction and the Y direction.
13 and introduced into the chamber 6 from a boat 11 made of quartz or the like. The introduced laser light is incident on the substrate 5. Exhaust is performed by an oil rotary pump 23, a mechanical booster pump 24, and an oil diffusion pump 25. In order to prevent the inside of the chamber 6 from being contaminated by oil from the oil diffusion pump 25 during the main pulling, a baffle plate 30 is installed midway through the liquid nitrogen trap 26.
is provided. In the figure, 29 is a main valve, 28 is a rough intake valve, 27 is an auxiliary valve, and 31 is a film thickness detector consisting of a crystal oscillator to detect the film thickness and evaporation rate formed on the surface of the substrate 5. be. Next, a thin film forming process using the present apparatus configured as described above will be explained. First, the leak valve 32 is opened to introduce Ai into the chamber 6.
r or various gases are introduced to bring the inside of the chamber 6 to atmospheric pressure. After opening the chamber 6 and placing the substrate 5 on the substrate holder 17 and filling the crucible 2 with the evaporated substance 1, the chamber 6 is closed;
Open the roughing valve 28 and pump the inside of the chamber 6 at 0.5 T.
The substrate rotation mechanism 34 is operated, the substrate 5 is heated to a predetermined temperature using the nitrogen lamp 19 and the sheathed heater 20, the roughing valve 28 is closed, and the main valve 29 is opened to supply oil. The diffusion pump 25 performs exhaustion. Assuming that the chamber 6 is evacuated to a temperature below 2.times.1 O-5 Torr, it is confirmed that the temperature has risen to a predetermined temperature, and then, for example, 02 gas is introduced from the variable leak valve 33 to maintain the inside of the chamber 6 at a predetermined pressure. Next, the shutter 15 for blanking the laser beam is opened to send the laser beam into the chamber 6 through the lens 14, mirror 13,
12. Turn on the boat 11, apply a laser beam to the substrate 5, and at the same time heat and evaporate the vapor deposition material 1 in the crucible 2, and close the shutter 9 to start vapor deposition. The thickness of the deposited film is monitored by a film thickness detector 31, which is a crystal oscillator, installed in the chamber 6. P9T
γr of the pheasant film thickness, after forming the people,/Natsuta-9
After closing the blanking shutter 15 and irradiating the laser beam for an arbitrary period of time, the blanking shutter 15 is closed and the halogen lamp 1 is turned off.
9. Stop the sheathed heater 20 and the substrate rotation mechanism 34, stop the gas introduction from the variable leak valve 33, and close the chamber 6.
Vacuum the inside. After the chamber 6 is evacuated for an appropriate time, air or gas is supplied from the leak valve 32 to bring the inside of the chamber 6 to atmospheric pressure, and the substrate 5 is taken out. It is better to use a mirror 12 such as a polygon mirror to sense the laser beam spot without spreading the laser beam using a lens or the like, and it should be installed in the vacuum chamber to guide the laser beam into the vacuum chamber. In addition to quartz, a material such as Ge, which is less affected by the power of the laser beam, is preferable. According to this embodiment, the substrate 5 is irradiated with the laser beam. Therefore, the substrate 5 is stimulated, its surface is purified, and the nuclear particles are stimulated.Therefore, the high-frequency electric field and DC electric field that are conventionally necessary to create a plasma discharge are no longer required. It is possible to eliminate the recreational operation of the vaporized foil device caused by both electric fields.The present invention is not limited to the above-mentioned example of the device, and can be implemented with individual modifications without departing from the gist of the invention. For example, the laser beam type mentioned above is not limited to argon laser, but if an fR element laser is used, it is possible to ionize oxidized substances, etc. Also, the output power and beam diameter etc. can be changed according to the specifications. It may be determined as appropriate. Note that instead of a laser beam source, it is also possible to use a beam source that outputs a neutral beam.Furthermore, it goes without saying that various materials can be applied to the vapor deposition material. Furthermore, various types of exhaust pumps can also be applied to the exhaust system. (Effects of the Invention) As explained above, according to the present invention, thermal radiation of a laser beam or a neutral beam Since the base material is stimulated, there is no need to use a high frequency electric field or a DC electric field.
Malfunctions of the vapor deposition apparatus caused by these high frequency electric fields and DC electric fields can be eliminated. Therefore, stable operation over a long period of time can be ensured, and the operating rate of the vapor deposition apparatus can be greatly improved. In addition, since we use laser beams or neutral beams instead of high frequency excitation, direct 6iE excitation, ion beams, etc.
Since it is possible to clean only the substrate and there is no need to increase the beam density, it is effective for cleaning plastic and glass surfaces.
第１図は本発明の蒸発方法を実施する薄膜衝撃蒸着装置
の一実施例示す概略構成図、第２図は従来のイオンブレ
ーティング装置の概略構成図である。
１−−一蒸着物質、 ２−−−ルツボ、 ５−−一基板
、 ６−−−チヤンパ、 ９−ｍ−シャッタ。
１１−ｍ−石英ボート、 １２．１３−ｍ−走査用ミ
ラー、 １５−ｍ−プランキング用シャッタ。
１６−−−レーザ光源、 ２２−一一水冷パイブ。
２３−一一泊回転ポンプ、 ２４−ｍ−メカニカルブ
ースタポンプ、 ２５−−一油拡散ポンプ。
３２−ｍ−す−クパルプ、３３−−−ガス導入用町変リ
ークパルプ。FIG. 1 is a schematic diagram showing an embodiment of a thin film impact evaporation apparatus for carrying out the evaporation method of the present invention, and FIG. 2 is a schematic diagram of a conventional ion blating apparatus. 1--1 vapor deposition substance, 2--crucible, 5--1 substrate, 6--champer, 9--m shutter. 11-m-quartz boat, 12.13-m-scanning mirror, 15-m-planking shutter. 16--Laser light source, 22-11 Water cooling pipe. 23--One night rotary pump, 24--Mechanical booster pump, 25--One oil diffusion pump. 32-m-Su Ku pulp, 33--Machihen leak pulp for gas introduction.
Claims (1)
設け、薄膜を形成する蒸着可能な蒸気を蒸発源から前記
真空内に供給し、前記蒸気を前記基材上に薄膜を生じる
ように接触させ、該薄膜に、十分な数及びエネルギーの
レーザビーム源又は中性ビーム源からの活性ある原子粒
子を含む加速された粒子で衝撃を与えることを特徴とす
る薄膜衝撃蒸着方法。 ２、真空に維持されたチャンバ内に、基材と該基材上に
薄膜を形成する蒸着可能な蒸気源とを設け、上記基材に
レーザビームを照射し基材表面を浄化し蒸発粒子を刺戟
せしめるレーザビーム源を設けたことを特徴とする薄膜
衝撃蒸着装置。 ３、前記レーザビーム源は、チャンバの側面に設けられ
ており、該レーザビーム源からのレーザビームは走査用
ミラーを介してチャンバ内の基材に導かれる特許請求の
範囲第２項記載の薄膜衝撃蒸着装置。[Claims] 1. A vacuum is maintained in a chamber, a base material is provided in the chamber, a vapor that can be deposited to form a thin film is supplied from an evaporation source into the vacuum, and the vapor is applied to the base material. a thin film thereon, the thin film being bombarded with accelerated particles comprising active atomic particles from a laser beam source or a neutral beam source in sufficient number and energy. Shock deposition method. 2. In a chamber maintained in vacuum, a base material and a vapor source capable of vapor deposition to form a thin film on the base material are provided, and the base material is irradiated with a laser beam to purify the surface of the base material and remove evaporated particles. A thin film impact vapor deposition apparatus characterized by being provided with a stimulating laser beam source. 3. The thin film according to claim 2, wherein the laser beam source is provided on a side surface of the chamber, and the laser beam from the laser beam source is guided to the substrate in the chamber via a scanning mirror. Shock deposition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22789685A JPS6289861A (en) | 1985-10-15 | 1985-10-15 | Method and apparatus for bombardment vapor deposition of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22789685A JPS6289861A (en) | 1985-10-15 | 1985-10-15 | Method and apparatus for bombardment vapor deposition of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6289861A true JPS6289861A (en) | 1987-04-24 |
Family
ID=16868006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22789685A Pending JPS6289861A (en) | 1985-10-15 | 1985-10-15 | Method and apparatus for bombardment vapor deposition of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6289861A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090008577A1 (en) * | 2007-07-07 | 2009-01-08 | Varian Semiconductor Equipment Associates, Inc. | Conformal Doping Using High Neutral Density Plasma Implant |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205474A (en) * | 1983-05-04 | 1984-11-21 | Semiconductor Energy Lab Co Ltd | Vapor deposition method |
| JPS61276212A (en) * | 1985-05-30 | 1986-12-06 | Nec Corp | Formation of thin film |
-
1985
- 1985-10-15 JP JP22789685A patent/JPS6289861A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205474A (en) * | 1983-05-04 | 1984-11-21 | Semiconductor Energy Lab Co Ltd | Vapor deposition method |
| JPS61276212A (en) * | 1985-05-30 | 1986-12-06 | Nec Corp | Formation of thin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090008577A1 (en) * | 2007-07-07 | 2009-01-08 | Varian Semiconductor Equipment Associates, Inc. | Conformal Doping Using High Neutral Density Plasma Implant |
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