JPS6290260U - - Google Patents
Info
- Publication number
- JPS6290260U JPS6290260U JP18255085U JP18255085U JPS6290260U JP S6290260 U JPS6290260 U JP S6290260U JP 18255085 U JP18255085 U JP 18255085U JP 18255085 U JP18255085 U JP 18255085U JP S6290260 U JPS6290260 U JP S6290260U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- main
- diode
- battery
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Description
第１図は本考案の一実施例回路図である。図中
Ｅはバツテリ、ＳＷ１は間欠起動スイツチ、Ｍは
ワイパモータ、ＳＷ２は位置検出スイツチ、Ｑ１
，Ｑ２，Ｑ３，Ｑ４，Ａ１，Ａ２はトランジスタ
、Ｃはコンデンサ、Ｄ１，Ｄ２はダイオードであ
る。
Ｅはバツテリ、ＳＷ１は間欠起動スイツチ、Ｍは
ワイパモータ、ＳＷ２は位置検出スイツチ、Ｑ１
，Ｑ２，Ｑ３，Ｑ４，Ａ１，Ａ２はトランジスタ
、Ｃはコンデンサ、Ｄ１，Ｄ２はダイオードであ
る。
Claims (1)
- バツテリの出力端子間に主トランジスタを介し
て接続されるワイパモータと前記バツテリの一出
力端子を起動スイツチを介して前記主トランジス
タのベースに接続する回路と前記ワイパモータの
位置検出スイツチと前記主トランジスタと位置検
出スイツチ間に直列接続される第２のトランジス
タと前記バツテリの一出力端子と前記位置検出ス
イツチ間に接続されるコンデンサとダイオードの
直列回路と前記ダイオードの両端に抵抗を介して
ベースエミツタが接続される第３のトランジスタ
と前記第３のトランジスタの出力を増巾して前記
第２のトランジスタのベースに与える第４のトラ
ンジスタと前記主及び第２トランジスタの夫々ベ
ース間を接続するダイオードとを備えたことを特
徴とする間欠ワイパ装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18255085U JPS6290260U (ja) | 1985-11-27 | 1985-11-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18255085U JPS6290260U (ja) | 1985-11-27 | 1985-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6290260U true JPS6290260U (ja) | 1987-06-09 |
Family
ID=31128451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18255085U Pending JPS6290260U (ja) | 1985-11-27 | 1985-11-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6290260U (ja) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7279194B2 (en) | 2000-02-04 | 2007-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus |
| US7288420B1 (en) | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| US7473928B1 (en) | 1999-10-12 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and a method of manufacturing the same |
| US7489291B2 (en) | 1996-09-27 | 2009-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of fabricating the same |
| US7494837B2 (en) | 1999-10-13 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Thin film forming apparatus |
| US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| US8987988B2 (en) | 1999-06-04 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
1985
- 1985-11-27 JP JP18255085U patent/JPS6290260U/ja active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7489291B2 (en) | 1996-09-27 | 2009-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of fabricating the same |
| US7532208B2 (en) | 1996-09-27 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of fabricating the same |
| US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| US9123854B2 (en) | 1999-06-04 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| US7393707B2 (en) | 1999-06-04 | 2008-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| US7462501B2 (en) | 1999-06-04 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| US7288420B1 (en) | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| US9368680B2 (en) | 1999-06-04 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| US8987988B2 (en) | 1999-06-04 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7473928B1 (en) | 1999-10-12 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and a method of manufacturing the same |
| US7521722B2 (en) | 1999-10-12 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and a method of manufacturing the same |
| US7548023B2 (en) | 1999-10-12 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and a method of manufacturing the same |
| US8884301B2 (en) | 1999-10-12 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and a method of manufacturing the same |
| US7494837B2 (en) | 1999-10-13 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Thin film forming apparatus |
| US7279194B2 (en) | 2000-02-04 | 2007-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus |