JPS6290903A - Heating element of thermal head - Google Patents
Heating element of thermal headInfo
- Publication number
- JPS6290903A JPS6290903A JP60229852A JP22985285A JPS6290903A JP S6290903 A JPS6290903 A JP S6290903A JP 60229852 A JP60229852 A JP 60229852A JP 22985285 A JP22985285 A JP 22985285A JP S6290903 A JPS6290903 A JP S6290903A
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- thermal head
- resistance
- present
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims description 23
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000011195 cermet Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔技術分野〕 本発明はサーマルヘッド用発熱体に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a heating element for a thermal head.
サーマルヘッドはフンピユータ、ワードプロセッサ、フ
ァクシミリ等における印字ヘッドとして広く用いられて
いる。サーマルヘッドは抵抗発熱体のドツトを多数配列
し、それらを選択的に通電することにより所望のパター
ンないし文字の形に発熱させ・印字リボンの色材を用紙
面へ熱転写させるようになっている。抵抗発熱体には種
々のものが知られ、或いは使用されているが、良く用い
られる材料としてはＴ Ｉ ％ ＴｌＮ１Ｔ ａ −、
Ｔａ−８ｉｏｎサーメット、Ｃｒ−８３０１サーメツト
等がある。これらはサーマルヘッド用抵抗発熱体として
すぐれた特性を有するが、繰返し発熱によるアニール効
果のために電気抵抗値が次第に減少して過大電流が流れ
、比較的対時間の後に破壌するに至る。また他の問題と
しては電極との反応がある。第１図はサーマルヘッドの
発熱部の概要を示し、下から順にアルミナ等の基板１、
蓄熱用のグレーズガラス層２、発熱体層３、電極４．５
、及び耐摩耗性保護膜６より成る。図の７は発熱となる
。電極４．５には、Ａ Ｉ ％ Ｃｒ ％ Ｎ ｉ等が
用いられるが、発熱体３の発熱により電極と発熱体との
間に反応が生じ、同じくクラックの発生や破壊の原因と
なる。Thermal heads are widely used as print heads in computer computers, word processors, facsimile machines, and the like. The thermal head has a large number of resistive heating element dots arranged, and by selectively energizing them, they generate heat in a desired pattern or character shape and thermally transfer the color material of the printing ribbon onto the paper surface. Various resistance heating elements are known or used, but commonly used materials include T I % TlN1T a -,
Examples include Ta-8ion cermet and Cr-8301 cermet. These have excellent properties as resistance heating elements for thermal heads, but due to the annealing effect caused by repeated heat generation, the electrical resistance value gradually decreases, excessive current flows, and they break down after a relatively long time. Another problem is the reaction with the electrodes. Figure 1 shows an overview of the heat generating part of the thermal head, starting from the bottom: substrate 1 made of alumina, etc.
Glazed glass layer 2 for heat storage, heating element layer 3, electrode 4.5
, and a wear-resistant protective film 6. 7 in the figure indicates heat generation. Although A I % Cr % Ni or the like is used for the electrode 4.5, the heat generated by the heating element 3 causes a reaction between the electrode and the heating element, which also causes cracking and destruction.
従って、本発明の目的は、長寿命のサーマルヘッド用発
熱体を提倶することにある０
〔発明の概要〕
本発明の上記目的は、サーマルヘッド用抵抗発熱体とし
て、ＭＮ ｘ（ここにＭはＷまたはＭＯ１Ｘ＝０〜ｃＬ
８）、好ましくはＷＮｘ（ｘは０．８以下）を用いるこ
とによって達成される。Therefore, an object of the present invention is to provide a long-life heating element for a thermal head. is W or MO1X=0~cL
8), preferably achieved by using WNx (x is 0.8 or less).
本発明の発熱体は長期間にわたって電気抵抗が一定であ
り、熱破壊のおそれがないすぐれた発熱体である。The heating element of the present invention has a constant electric resistance over a long period of time, and is an excellent heating element without fear of thermal breakdown.
本発明は上に述べた通りＭＮｘ（ｘ＝＝０〜０．８）で
表わされる抵抗発熱体である。タングステンやモリブデ
ンは従来から知られている発熱体ではあるが、サーマル
ヘッド用には検討されたことがない。それは、これらの
物質をサーマルヘッドに適する厚みに成膜することがで
きなかったためかと思われる。As described above, the present invention is a resistance heating element represented by MNx (x==0 to 0.8). Although tungsten and molybdenum are conventionally known heating elements, they have never been considered for use in thermal heads. This seems to be because it was not possible to form a film of these substances to a thickness suitable for the thermal head.
本発明ではスパッタ法によりこれらの元素の単体または
窒化物の薄い膜を形成することができた。In the present invention, a thin film of a simple substance or nitride of these elements could be formed by sputtering.
発熱体として適する膜厚は１００〜４０００Åであり・
通常は約１００〜１０００人が用いられる。The film thickness suitable as a heating element is 100 to 4000 Å.
Usually about 100 to 1000 people are used.
窒素はＷまたはＭｅに対して０．８以下（原子比）の割
合を占める。窒素は抵抗値を調整する役割を持ち、含有
量に比例して抵抗が増えるが、比率が（Ｌ８を超えると
抵抗が大きくなり過ぎる。抵抗値は発熱体の厚さと固有
抵抗との相関で定まるが、１００人のように薄い場合に
は厚み効果で抵抗が大きくなるので単体のＷまたはＭｏ
が適し、４０００人のように厚い膜では高い固有抵抗の
窒化物を用いることができる。しかし、厚さが大き過ぎ
ると熱容量が大きくなるため発熱に時間的な遅れが生じ
るので、上記の１８以下の比率で用いることが好ましい
。Nitrogen occupies a ratio of 0.8 or less (atomic ratio) to W or Me. Nitrogen has the role of adjusting the resistance value, and the resistance increases in proportion to the content, but if the ratio exceeds (L8), the resistance becomes too large.The resistance value is determined by the correlation between the thickness of the heating element and the specific resistance. However, if it is thin like 100 people, the resistance will increase due to the thickness effect, so a single W or Mo
For films as thick as 4000 nm, high resistivity nitrides can be used. However, if the thickness is too large, the heat capacity increases and a time delay occurs in heat generation, so it is preferable to use the above ratio of 18 or less.
スパッタ原料としては単体金属そのまま、又はそれらの
窒化物ＷＮまたはＭ ｏ Ｎの粉末を圧縮してタブレッ
ト化し、これをターゲットとして用いる。As sputtering raw materials, single metals as they are, or powders of their nitrides WN or MoN are compressed into tablets and used as targets.
雰圀気として人ｒ１まだ必要に応じてＮ、またはＮＨ，
ガスを共存させてイオン化Ａｒによりスパッターし、基
板の上に成膜する。例えばＷｔｅＮ！またはＮＨ，を混
入したＡｒでスパッタし、ＷＮＸを成膜することができ
る。As the atmosphere, the person r1 is still N, or NH, if necessary.
A film is formed on the substrate by sputtering with ionized Ar in the presence of a gas. For example, WteN! Alternatively, WNX can be formed by sputtering with Ar mixed with NH.
次に本発明の実施例を詳しく説明する。Next, embodiments of the present invention will be described in detail.
実施例
タングステンＷをターゲットとして用い、Ａｒガスに可
変量のＮ！ガスを混入し、投入電力４００Ｗ ＳＡ ｒ
＋ Ｎ ！圧１０Ｐａ（Ｎ１分分圧Ｐａ）、基板温度
３５０°ＣにてＤＣマグネットロンスパッタリング法に
より２００〜３００人の厚さの発熱体を成膜した。発熱
試験で次のことが分った。Example Tungsten W was used as a target, and a variable amount of N! was added to Ar gas. Mix gas and input power 400W SA r
＋N! A heating element having a thickness of 200 to 300 mm was formed by DC magnetron sputtering at a pressure of 10 Pa (N1 partial pressure Pa) and a substrate temperature of 350°C. The fever test revealed the following:
ＷあるいはＷＮｘは化学的に安定であり・電極としてＡ
１・Ｃｒ、Ｎｉ等を用いても反応せず、従来のような拡
散防止膜を用いる必要がなく、長期に安定な特性を示す
ことが分った。また、熱アニール効果による再結晶化が
なく粒成長が起こらないため応力に変化が生じない。よ
って応力変化によるクラック発生がなく、また電気的に
も安定であった。W or WNx is chemically stable and can be used as an electrode.
It was found that there is no reaction even when 1.Cr, Ni, etc. are used, there is no need to use a conventional diffusion prevention film, and the product exhibits stable characteristics over a long period of time. Furthermore, since there is no recrystallization due to thermal annealing effect and grain growth does not occur, no change in stress occurs. Therefore, no cracks were generated due to stress changes, and the product was electrically stable.
第２図はステップストレステストによる本発明のＷＮｘ
膜（ｘ＝０．２）の耐用試験の結果を示す。Figure 2 shows the WNx of the present invention according to a step stress test.
The results of the durability test of the membrane (x=0.2) are shown.
なお対照のためＣｒ−５ｉｎ、サーメット及びＴｌＮｘ
を対照して示した。ステップストレス試験は、パルス状
の印加電力をステップ状に増大させながら抵抗値の変化
△Ｒ／Ｒ（％）を測定するものである。図のように、本
発明の発熱体は高い電力でも安定であり、従来の発熱体
よりもはるかに安定であることが分る。For comparison, Cr-5in, cermet and TINx
are shown in comparison. The step stress test measures the change in resistance value ΔR/R (%) while increasing the applied pulsed power in a stepwise manner. As shown, it can be seen that the heating element of the present invention is stable even at high power, and is much more stable than the conventional heating element.
本発明による効果は上にかなり詳しく述べた通りであり
、まとめると、
ｔ 耐過電力性にすぐれている。The effects of the present invention are as described in detail above, and in summary, t is excellent in overpower resistance.
２、 抵抗値変化が少ない。2. There is little change in resistance value.
３、 耐クラッチ性にすぐれている。3. Excellent clutch resistance.
４、熱的、電気的に安定であるため、動作中の抵抗値変
化がなく、抵抗値安定させるアニール工程を必要としな
い。4. Since it is thermally and electrically stable, there is no change in resistance value during operation, and there is no need for an annealing process to stabilize the resistance value.
第１図はサーマルヘッド用発熱体の断面図、及び第２因
はステップストレステストを示すグラフである。
１１Ｆλ反２（７ルミナ）FIG. 1 is a cross-sectional view of a heating element for a thermal head, and a graph showing a step stress test for the second cause. 11Fλ anti-2 (7 Lumina)
Claims (3)
て構成されたサーマルヘッド用発熱体。1. A heating element for a thermal head that is mainly composed of W, Mo, or one of their nitrides.
項記載の発熱体。2. The first heating element has a film thickness of 100 to 4000 Å.
Heating element described in section.
下）である、前記第１項または第２項記載の発熱体。3. The heating element according to item 1 or 2, wherein the nitride is MNx (M is W or Mo, x is 0.8 or less).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229852A JPS6290903A (en) | 1985-10-17 | 1985-10-17 | Heating element of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229852A JPS6290903A (en) | 1985-10-17 | 1985-10-17 | Heating element of thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6290903A true JPS6290903A (en) | 1987-04-25 |
Family
ID=16898694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60229852A Pending JPS6290903A (en) | 1985-10-17 | 1985-10-17 | Heating element of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6290903A (en) |
-
1985
- 1985-10-17 JP JP60229852A patent/JPS6290903A/en active Pending
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