JPS6311314B2 - - Google Patents
Info
- Publication number
- JPS6311314B2 JPS6311314B2 JP61266427A JP26642786A JPS6311314B2 JP S6311314 B2 JPS6311314 B2 JP S6311314B2 JP 61266427 A JP61266427 A JP 61266427A JP 26642786 A JP26642786 A JP 26642786A JP S6311314 B2 JPS6311314 B2 JP S6311314B2
- Authority
- JP
- Japan
- Prior art keywords
- sintering
- plasma
- atmosphere
- sintered body
- ceramic sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Powder Metallurgy (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はセラミツク粉末焼結体の焼結法に関す
るものであり、従来の真空焼結法あるいはガス雰
囲気焼結法では得られない高品質なセラミツク焼
結体の製造を可能とする新しい焼結法に関するも
のである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a method for sintering ceramic powder sintered bodies, which produces high quality materials that cannot be obtained by conventional vacuum sintering methods or gas atmosphere sintering methods. This invention relates to a new sintering method that enables the production of ceramic sintered bodies.
(従来技術)
従来セラミツク粉末焼結体は、真空焼結、減圧
H2雰囲気焼結、減圧CO雰囲気焼結で還元を行な
つていた。(Conventional technology) Conventional ceramic powder sintered bodies were produced using vacuum sintering and reduced pressure.
Reduction was performed using H 2 atmosphere sintering and reduced pressure CO atmosphere sintering.
(発明が解決しようとする問題点)
しかしながら完全には還元を行なうことが出来
ないためセラミツク焼結体中の有害な酸素量は多
量に残り、焼結性を阻害した。また窒素を含むセ
ラミツク焼結体は焼結体中の窒素の分解を防ぐた
め減圧或いは加圧N2雰囲気焼結で行なつていた
が、脱窒を防止できてもセラミツク焼結体中に多
量の巣を発生し、緻密なセラミツク焼結体が得ら
れない欠点があつた。(Problems to be Solved by the Invention) However, since the reduction could not be carried out completely, a large amount of harmful oxygen remained in the ceramic sintered body, impeding sinterability. Ceramic sintered bodies containing nitrogen have been sintered in a reduced pressure or pressurized N2 atmosphere to prevent the decomposition of nitrogen in the sintered body, but even if denitrification can be prevented, a large amount of nitrogen in the ceramic sintered body remains. This had the disadvantage that a dense ceramic sintered body could not be obtained due to the formation of cavities.
本発明は以上の焼結法の欠点を改善すべく画期
的焼結法を提供することにある。以下に詳細に本
発明を説明する。 The object of the present invention is to provide an innovative sintering method to improve the above-mentioned drawbacks of the sintering method. The present invention will be explained in detail below.
(問題点を解決するための手段)
本発明の焼結法は、セラミツク粉末を焼結する
に際し、焼結過程の一部又は全部を、炉体とは別
に設けたマイクロ波電源から供給するプラズマガ
ス雰囲気中で行うことを特徴とするものである。(Means for Solving the Problems) The sintering method of the present invention, when sintering ceramic powder, performs part or all of the sintering process using plasma supplied from a microwave power source provided separately from the furnace body. This method is characterized by being carried out in a gas atmosphere.
なお上記セラミツクとしては例えば下記の様な
ものがある。 The above-mentioned ceramics include, for example, those listed below.
Al2O3を主たる成分としたもの、
Al2O3に10〜40wt%のTiCを添加したもの、
Al2O3に10〜40wt%のZrO2を添加したもの、
Al2O3に10〜40wt%のSiCウイスカーを添加
したもの、
〜の組み合せ、
Si3N4を主たる成分としたもの、
SiCを主たる成分としたもの、
AlNを主たる成分としたもの。 Al2O3 as the main component, Al2O3 with 10-40wt% TiC added, Al2O3 with 10-40wt % ZrO2 , Al2O3 with 10wt % A combination of ~40 wt% SiC whiskers, a combination of ~, a main component of Si 3 N 4 , a main component of SiC, and a main component of AlN.
(作用)
本発明は後述するごとく、焼結過程において
H2、N2、CO、He及びArのガスを単独あるいは
混合状態の雰囲気を使用してマイクロ波電源を用
いてガスプラズマ雰囲気を発生させることを特徴
とする焼結法である。(Function) As described later, the present invention
This is a sintering method characterized by generating a gas plasma atmosphere using a microwave power source using an atmosphere of H 2 , N 2 , CO, He, and Ar gases alone or in a mixed state.
プラズマには電子とイオンがほぼ同じエネルギ
ーを持つ平衡状態の熱プラズマと電子エネルギー
がイオンとガス分子のエネルギーに比べて大きい
非平衡状態の低温プラズマの二つに分類される。 Plasmas are classified into two types: thermal plasma, which is in an equilibrium state in which electrons and ions have approximately the same energy, and low-temperature plasma, which is in a non-equilibrium state, where electron energy is larger than the energy of ions and gas molecules.
本発明は後者の低温プラズマを適用した焼結法
である。低温プラズマの場合、イオンとガス分子
の温度は数百から千度ほどに励起され、電子温度
は数万度にも達する。この高エネルギー電子とガ
ス分子が非弾性衝突してガス分子をラジカルと称
する反応性に富む原子に解離させ、ガス反応を促
進する効果がある。 The present invention is a sintering method using the latter low-temperature plasma. In the case of low-temperature plasma, ions and gas molecules are excited to temperatures of several hundred to 1,000 degrees, and electron temperatures reach tens of thousands of degrees. These high-energy electrons and gas molecules collide inelastically, dissociating the gas molecules into highly reactive atoms called radicals, which has the effect of promoting gas reactions.
例えばH2、CO等の還元性ガスをプラズマ化さ
せると化学平衡論に基づく所謂熱力学上では還元
が困難とされる材料に対しても還元が可能となる
場合もある。 For example, by turning a reducing gas such as H 2 or CO into plasma, it may be possible to reduce materials that are difficult to reduce based on so-called thermodynamics based on chemical equilibrium theory.
まずH2を用いたプラズマ焼結(以下H2プラズ
マ焼結と記す)では従来の真空焼結あるいはガス
雰囲気焼結と比べて以下に示すような利点および
効果がある。 First, plasma sintering using H 2 (hereinafter referred to as H 2 plasma sintering) has the following advantages and effects compared to conventional vacuum sintering or gas atmosphere sintering.
H2プラズマ焼結を行う第1の目的はセラミツ
ク焼結体の還元である。従来の減圧H2雰囲気焼
結に対してH2プラズマ焼結では低濃度(ガス流
量少)でよいため省資源的かつ経済的である。さ
らに従来の減圧H2雰囲気焼結では還元作用を高
めるためにH2雰囲気は数十Torr〜数百Torrで行
われているがセラミツク焼結体中の有害な酸素を
完全には除去できないのみならず、この圧力のた
めにセラミツク焼結体に含有するH2O等の不必
要ガスの脱ガスを充分に行うことが出来なくて焼
結性を阻害している。H2プラズマ焼結の場合に
は、数百TorrのH2雰囲気プラズマ中で完全な還
元が行われ、さらに高真空であるために不必要ガ
スの脱ガスも充分行うことができる。以上のこと
よりH2プラズマ焼結では含有有害酸素量と巣が
極端に少ないセラミツク焼結体を得ることが出来
る。 The primary purpose of H 2 plasma sintering is to reduce the ceramic sintered body. Compared to conventional sintering in a reduced-pressure H 2 atmosphere, H 2 plasma sintering requires a lower concentration (smaller gas flow rate), making it more resource-saving and economical. Furthermore, in conventional reduced-pressure H 2 atmosphere sintering, the H 2 atmosphere is set at several tens to hundreds of Torr to enhance the reducing effect, but harmful oxygen in the ceramic sintered body cannot be completely removed. First, due to this pressure, unnecessary gases such as H 2 O contained in the ceramic sintered body cannot be sufficiently degassed, which impedes sinterability. In the case of H 2 plasma sintering, complete reduction is performed in an H 2 atmosphere plasma of several hundred Torr, and furthermore, unnecessary gases can be sufficiently degassed due to the high vacuum. From the above, H 2 plasma sintering can produce a ceramic sintered body with extremely low amounts of harmful oxygen and voids.
次にN2プラズマ焼結の効果について述べる。
N2含有セラミツク焼結体の焼結を行う場合従来
からの真空焼結ではセラミツク焼結体の脱窒が著
しく、例えばSi3N4セラミツクの場合表面層に
Si3N4と焼結助剤の分離した層が形成され、表面
硬度が低下してしまうという問題があつた。N2
雰囲気焼結の場合には脱窒を防止するために高濃
度のN2ガスを導入する必要があり、セラミツク
焼結体内部の脱ガスが充分に行われず、単の発生
の原因となつている。これらの焼結法に対しN2
プラズマ焼結法では少量のN2流量にもかかわら
ず、プラズマにより活性化されたラジカルなN2
によつて効果的な脱窒防止とN2コントロールが
可能であるばかりか高真空であるためにセラミツ
ク焼結体内部の不必要な発生ガスが容易に排出さ
れ、巣の形成が防止されるという特徴を有する。 Next, we will discuss the effects of N2 plasma sintering.
When sintering N 2 -containing ceramic sintered bodies, conventional vacuum sintering causes significant denitrification of the ceramic sintered bodies; for example, in the case of Si 3 N 4 ceramics, denitrification occurs in the surface layer.
There was a problem in that a separate layer of Si 3 N 4 and sintering aid was formed, resulting in a decrease in surface hardness. N2
In the case of atmosphere sintering, it is necessary to introduce a high concentration of N2 gas to prevent denitrification, which does not sufficiently degas the inside of the ceramic sintered body, causing the generation of nitrogen. . N2 for these sintering methods
In the plasma sintering method, although the N 2 flow rate is small, radical N 2 activated by the plasma is generated.
Not only is it possible to effectively prevent denitrification and control N2 , but the high vacuum also allows unnecessary gases generated inside the ceramic sintered body to be easily exhausted, preventing the formation of cavities. Has characteristics.
次にCOプラズマ焼結の結果について述べる。
COプラズマ焼結には還元作用が顕著である。前
述のH2或はN2プラズマ焼結の場合と同様である
が、従来のCO雰囲気焼結に比べて低濃度で効果
があり脱ガスも充分に行うことができる。さらに
H2、N2、CO、HeおよびArの各プラズマ焼結で
は活性化されたガスにより焼結体表面がプラズマ
エツチングされる結果セラミツク焼結体表面は清
浄化され焼結体特性を向上させる。 Next, we will discuss the results of CO plasma sintering.
CO plasma sintering has a significant reducing effect. This is similar to the case of H 2 or N 2 plasma sintering described above, but compared to conventional CO atmosphere sintering, it is effective at a lower concentration and can sufficiently degas. moreover
In H 2 , N 2 , CO, He, and Ar plasma sintering, the surface of the sintered body is plasma-etched by the activated gas, thereby cleaning the surface of the ceramic sintered body and improving the properties of the sintered body.
また、これらH2、N2、COおよびArの各ガス
を混合状態でプラズマを発生させた雰囲気中で焼
結を行えば脱窒防止、還元の組み合わせ効果を焼
結体に付与することができる。これは、従来の真
空焼結および雰囲気焼結では得られなかつた特性
である。 Additionally, if sintering is performed in an atmosphere in which plasma is generated by mixing these H 2 , N 2 , CO, and Ar gases, a combined effect of denitrification prevention and reduction can be imparted to the sintered body. . This is a property that cannot be obtained by conventional vacuum sintering and atmosphere sintering.
上記は窒化珪素を主成分とするセラミツクにつ
いて顕著である。 The above is remarkable for ceramics whose main component is silicon nitride.
更にアルミナを主成分とするセラミツクはアル
ミナ粒子の表面が不活性なことから極めて焼結し
難くホツトプレス法によつて加圧焼結を行う必要
がある。 Furthermore, ceramics containing alumina as a main component are extremely difficult to sinter because the surface of the alumina particles is inert, and it is necessary to perform pressure sintering using a hot press method.
しかし乍ら加圧焼結は、生産性に著しく欠ける
ため生産性にすぐれた常圧焼結を行えるよう酸化
マグネシウム等の焼結助剤を2wt%程度添加し、
アルミナ粒子表面にガラス相を生じさせ活性化さ
せることによつて常圧焼結を行うのが一般的であ
る。 However, pressure sintering is significantly lacking in productivity, so in order to perform pressureless sintering with excellent productivity, approximately 2wt% of sintering aids such as magnesium oxide are added.
Pressureless sintering is generally performed by generating and activating a glass phase on the surface of alumina particles.
しかしかかるガラス相は融点が低いため多量に
添加すると該セラミツクの耐熱性を損うものであ
つた。 However, since such a glass phase has a low melting point, adding a large amount impairs the heat resistance of the ceramic.
故に本発明のプラズマ焼結法によつてアルミナ
粒子の表面を活性化することによつて焼結助剤の
添加量を低くおさえることによつて耐熱性のすぐ
れたセラミツクを常圧焼結で製造することを可能
ならしめる。 Therefore, by activating the surface of alumina particles using the plasma sintering method of the present invention and keeping the amount of sintering aid added low, ceramics with excellent heat resistance can be produced by pressureless sintering. make it possible.
本発明であるプラズマ焼結法に用いた装置およ
び焼結炉についてまず図面を参照して説明する。 The apparatus and sintering furnace used in the plasma sintering method of the present invention will first be described with reference to the drawings.
第1図は本発明の焼結に使用する装置と焼結炉
の1実施例を示す。ステンレス炉体1の中は黒鉛
ヒータ2及びカーボンウール等の断熱材3と被処
理物5を収納する黒鉛製反応管4が配置され、炉
体内にはバルブ6を介して連結しているロータリ
ーポンプ7によつて排気され真空に維持される。
反応管4は石英の導入管8に接続されている。一
方H2、N2、CO、Ar、Heのガスはボンベ23〜
27から流量計18〜22、バルブ13〜17を
介して導入管8の他端に入りマイクロ波発振器1
2、チユーナ11からのマイクロ波が導波管10
を介してプラズマガス9となつて反応管に導入さ
れる。 FIG. 1 shows an embodiment of the apparatus and sintering furnace used for sintering according to the present invention. Inside the stainless steel furnace body 1, a graphite heater 2, a heat insulating material 3 such as carbon wool, and a graphite reaction tube 4 for storing a workpiece 5 are arranged, and a rotary pump connected to the furnace body through a valve 6 is arranged. 7 to maintain a vacuum.
The reaction tube 4 is connected to a quartz introduction tube 8. On the other hand, H 2 , N 2 , CO, Ar, and He gases are in cylinder 23~
27, enters the other end of the introduction pipe 8 via flowmeters 18 to 22 and valves 13 to 17, and enters the microwave oscillator 1.
2. The microwave from the tuner 11 passes through the waveguide 10
is introduced into the reaction tube as plasma gas 9.
第2図、第3図は本発明の焼結に、第1図のも
のと別個に時間的にずらして即ち経時的に併せて
使用する(第2図)、或いは第1図のものを組込
んで同時的に併せ使用する(第3図)ところの装
置と焼結炉の他の実施例を示し、第2図は高周波
発振器28を使用して、整合器29を介して銅コ
イル30によりプラズマガス9を発生した例であ
る。第3図はマイクロ波発振器12と高周波発振
器28を組み合わせてプラズマ密度の高いガスを
発生させた例である。 Figures 2 and 3 are used for the sintering of the present invention separately from those shown in Figure 1, chronologically staggered (Fig. 2), or used in combination with those shown in Figure 1. Another embodiment of the apparatus and the sintering furnace is shown in FIG. This is an example in which plasma gas 9 is generated. FIG. 3 shows an example in which a microwave oscillator 12 and a high frequency oscillator 28 are combined to generate a gas with high plasma density.
(実施例)
以下に本発明の理解を助けるため更に実施例に
ついて説明する。(Examples) Examples will be further described below to help understand the present invention.
実施例 1
市販の平均粒度1μのSi3N4粉末と、ほぼ同粒度
のAl2O3粉末、Y2O3粉末をSi3N493重量%、
Y2O33重量%、Al2O35重量%配合し、窒化珪素製
のボールを用い、ナイロン内張ポツトによつて
120時間ボールミル粉砕を行なつた。Example 1 Commercially available Si 3 N 4 powder with an average particle size of 1μ, Al 2 O 3 powder and Y 2 O 3 powder with approximately the same particle size were mixed with 93% by weight of Si 3 N 4 ,
Containing 3% by weight of Y 2 O 3 and 5% by weight of Al 2 O 3 , using a silicon nitride ball and a nylon-lined pot.
Ball milling was carried out for 120 hours.
この粉末に粘着剤を添加したのち、2t/cm2の圧
力で型押しを行なつた。大気中400℃で粘着剤を
除去したのち第1図の装置で常温より1200℃まで
2.45GHzのマイクロ波発振電力1KWで0.5Torrで
H2プラズマを発生させながら昇温、しかるのち、
マイクロ波発振電力5KW、30TorrのN2プラズマ
にて1650℃1時間の焼結を行なつた。 After adding an adhesive to this powder, embossing was performed at a pressure of 2 t/cm 2 . After removing the adhesive at 400°C in the air, it is heated from room temperature to 1200°C using the equipment shown in Figure 1.
2.45GHz microwave oscillation power 1KW and 0.5Torr
The temperature is increased while generating H 2 plasma, and then
Sintering was performed at 1650°C for 1 hour using N 2 plasma with a microwave oscillation power of 5KW and 30Torr.
本発明であるマイクロ波プラズマ焼結法で行な
つたセラミツクは密度が理論密度の99.9%以上と
まつたく巣が存在せず、又該セラミツク焼結体中
に含有された窒素量は理論値の99.4%が残存して
いた。 The density of the ceramic produced by the microwave plasma sintering method of the present invention is 99.9% or more of the theoretical density, and there are no cavities, and the amount of nitrogen contained in the ceramic sintered body is less than the theoretical value. 99.4% remained.
比較のため同一型押し体を従来の焼結技術であ
る常温から1200℃までは100TorrのN2中でしか
るのち1800℃9.5気圧のN2気流中2時間で焼結を
行なつた。得られた比較品は密度が理論密度の
98.5%しかなく、かつ含有窒素量は理論値の89.5
%しか残存しなかつた。 For comparison, the same stamped body was sintered using conventional sintering techniques in N 2 at 100 Torr from room temperature to 1200°C, and then sintered at 1800°C in a N 2 stream at 9.5 atm for 2 hours. The obtained comparison product has a density of the theoretical density.
Only 98.5%, and the nitrogen content is 89.5 of the theoretical value
Only % remained.
実施例 2
市販の粒度約1μのAl2O3粉末68.5重量%、TiC
粉末30.0重量%、Y2O31.0重量%、NiO0.5重量%
を混合、型押しを行い、第1図の装置にて2.45G
Hzのマイクロ波発振電力1KWにて5TorrのH2プ
ラズマ中1550℃1時間で焼結したところ、理論密
度の99.5%のセラミツクス焼結体が得られた。Example 2 68.5% by weight of commercially available Al 2 O 3 powder with a particle size of about 1 μ, TiC
Powder 30.0% by weight, Y 2 O 3 1.0% by weight, NiO 0.5% by weight
Mixed, stamped, and 2.45G using the equipment shown in Figure 1.
When sintered at 1550°C for 1 hour in H 2 plasma at 5 Torr with a microwave oscillation power of 1 KW at Hz, a ceramic sintered body with a theoretical density of 99.5% was obtained.
従来、この組成のセラミツクはホツトプレスを
用いないと緻密化しないことが知られている。 It has been known that ceramics with this composition cannot be densified unless hot-pressed.
(発明の効果)
以上の様に本発明によれば、巣のない且つ脱窒
の少ないセラミツク焼結体が容易に得られる。(Effects of the Invention) As described above, according to the present invention, a ceramic sintered body without voids and with little denitrification can be easily obtained.
第1図は本発明に於いて使用する装置と焼結炉
の模式的構成を例示する図、第2図、第3図は本
発明に於いて第1図のものと経時的に併せて使用
する(第2図)、或いは第1図のものを組込み同
時に併せて使用する(第3図)ところの装置と焼
結炉の模式的構成を例示する図を夫々例示してい
る。
1……炉体、2……ヒータ、3……断熱材、4
……反応管、5……被処理物、6,13,14,
15,16,17……バルブ、7……ロータリー
ポンプ、8……導入管、9……プラズマ、10…
…導波管、11……チユーナ、12……マイクロ
波発振器、18,19,20,21,22……流
量計、23……H2ボンベ、24……N2ボンベ、
25……COボンベ、26……Arボンベ、27…
…Heボンベ、28……高周波発振器、29……
整合器、30……銅コイル。
Figure 1 is a diagram illustrating the schematic configuration of the apparatus and sintering furnace used in the present invention, and Figures 2 and 3 are used in conjunction with the one in Figure 1 in the present invention over time. Figures illustrating the schematic configuration of an apparatus and a sintering furnace are shown, respectively. 1...Furnace body, 2...Heater, 3...Insulating material, 4
... Reaction tube, 5 ... Processing object, 6, 13, 14,
15, 16, 17...Valve, 7...Rotary pump, 8...Introduction pipe, 9...Plasma, 10...
... Waveguide, 11 ... Tuner, 12 ... Microwave oscillator, 18, 19, 20, 21, 22 ... Flow meter, 23 ... H 2 cylinder, 24 ... N 2 cylinder,
25...CO cylinder, 26...Ar cylinder, 27...
...He cylinder, 28...High frequency oscillator, 29...
Matching box, 30...copper coil.
Claims (1)
の一部又は全部を、炉体とは別に設けたマイクロ
波電源から供給するプラズマガス雰囲気中で行う
ことを特徴とする焼結法。 2 特許請求の範囲第1項において、H2、N2、
CO、He及びArのガスの単独或いは混合状態の
プラズマガス雰囲気中で行う焼結法。[Claims] 1. A sintering process characterized in that when sintering ceramic powder, part or all of the sintering process is performed in a plasma gas atmosphere supplied from a microwave power source provided separately from the furnace body. Conclusion. 2 In claim 1, H 2 , N 2 ,
A sintering method performed in a plasma gas atmosphere containing CO, He, and Ar gases alone or in a mixed state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61266427A JPS62116703A (en) | 1982-07-31 | 1986-11-08 | Sintering method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57134332A JPS5925902A (en) | 1982-07-31 | 1982-07-31 | Sintering method |
| JP61266427A JPS62116703A (en) | 1982-07-31 | 1986-11-08 | Sintering method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57134332A Division JPS5925902A (en) | 1982-07-31 | 1982-07-31 | Sintering method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62116703A JPS62116703A (en) | 1987-05-28 |
| JPS6311314B2 true JPS6311314B2 (en) | 1988-03-14 |
Family
ID=26468466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61266427A Granted JPS62116703A (en) | 1982-07-31 | 1986-11-08 | Sintering method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62116703A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6336901B1 (en) | 1998-04-27 | 2002-01-08 | Omron Corporation | Sphygmomanometer cuff achieving precise measurement of blood pressure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52126606A (en) * | 1976-04-19 | 1977-10-24 | Inoue Japax Res Inc | Sintering by electric discharge |
| JPS5390111A (en) * | 1977-01-20 | 1978-08-08 | Taguchi Chobee | Ion sintering of metal material |
-
1986
- 1986-11-08 JP JP61266427A patent/JPS62116703A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62116703A (en) | 1987-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6311401B2 (en) | ||
| TW202240013A (en) | Microstructure control of conducting materials through surface coating of powders | |
| CN107002228B (en) | Plasma treatment and reactors for thermochemical treatment of metal parts surfaces | |
| JPS6311314B2 (en) | ||
| JP2001261457A (en) | Boron carbide joined body, method for producing the same, and plasma-resistant member | |
| TW202504873A (en) | Ceramic synthesis through surface coating of powders | |
| JP2794173B2 (en) | Method of forming composite carbon coating | |
| JPH021085B2 (en) | ||
| JPH07142414A (en) | Plasma processing device | |
| JP4032178B2 (en) | Method for manufacturing silicon nitride sprayed film | |
| JPS5825404A (en) | Cemented carbide sintering method | |
| JPS63277767A (en) | Method for synthesizing high-pressure phase boron nitride in gaseous phase | |
| JPH06345540A (en) | Method for sintering ceramic | |
| JPH11171669A (en) | Production of boron carbide film | |
| JPS62171902A (en) | Synthesis of fine aluminum nitride powder | |
| JPS60166264A (en) | Silicon carbide sintering method | |
| JPS63270393A (en) | Method for synthesizing diamond | |
| JPH0563436B2 (en) | ||
| JPH01246357A (en) | Production of cubic boron nitride film | |
| TW202604850A (en) | 3d printing using ald-coated powder | |
| JPH04292463A (en) | Ultra-fine powder composite material and its production | |
| JPH0312364A (en) | Orientable thin film of aln | |
| CN119020750A (en) | A (Hf, Zr, Ta) B2 solid solution coating, preparation method and application thereof | |
| WO2024187358A1 (en) | Rapid preparation method for transition metal boride | |
| JPS6363515B2 (en) |