JPS63127155A - Thin film analyzer - Google Patents

Thin film analyzer

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Publication number
JPS63127155A
JPS63127155A JP27378186A JP27378186A JPS63127155A JP S63127155 A JPS63127155 A JP S63127155A JP 27378186 A JP27378186 A JP 27378186A JP 27378186 A JP27378186 A JP 27378186A JP S63127155 A JPS63127155 A JP S63127155A
Authority
JP
Japan
Prior art keywords
electrode
thin film
specimen
current
excited species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27378186A
Other languages
Japanese (ja)
Other versions
JPH058985B2 (en
Inventor
Masahiko Tsuchiya
正彦 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP27378186A priority Critical patent/JPS63127155A/en
Publication of JPS63127155A publication Critical patent/JPS63127155A/en
Publication of JPH058985B2 publication Critical patent/JPH058985B2/ja
Granted legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)

Abstract

PURPOSE:To analyze the characteristic of a specimen such as MW or the like by a method wherein the molecule on the surface of the thin film specimen is ionized by an excited species and the data relating to the quantity of the electron of ion generated on said surface as the result of ionization is obtained from each electrode. CONSTITUTION:When high voltage is applied between a cylindrical electrode 8 and a needle electrode 10 from a power source 12 to generate corona discharge, exciting argon Ar* (excited species) is formed. When this excited species contacts with an org. thin film specimen 3, the specimen 3 is ionized by the energy possessed by the excited species. The electron thus formed can be detected by various modes. For example, in a mode wherein negative voltage Va is applied between collector electrodes 2, 4 to measure the current Ia flowing to an intermediate electrode 7, the electron flying out from the surface of the specimen can be detected by the electrode 7 because of the negative voltage applied to the electrodes 2, 4. At this time, the Va-Ia curve of the voltage Va and the current Ia shows a saturation characteristic. Since the saturation current Is thereof corresponds to the average MW of the substance present on the surface of the specimen, when the saturation current is calculated, the average MW of the surface of the specimen can be calculated.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は有nR膜の分析に用いて好適な薄膜分析計に関
する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film analyzer suitable for use in analyzing nR films.

[従来技術] 最近、バイオテクノロジーをはじめとする各種技術分野
において簿膜に関する研究が進められている。
[Prior Art] Recently, research on membranes has been progressing in various technical fields including biotechnology.

それらの研究においては薄膜の物性、特性を調べること
が重要であるが、そのための分析手段としては、イオン
マイクロアナライザ、オージェ電子分光装置、X線光電
子分光装置、赤外分光光度計などの装置が従来から用い
られている。
In these studies, it is important to investigate the physical properties and characteristics of thin films, and analytical tools such as ion microanalyzers, Auger electron spectrometers, X-ray photoelectron spectrometers, and infrared spectrophotometers are used for this purpose. Traditionally used.

[発明が解決しようとする問題点] 従来から用いられているそのような装置は、装置構成が
大樹りで価格が高く、試料を真空中に配置しなければな
らなかったり試料の前処理が必要であるなど測定に手間
がかかることは避けられなかった。
[Problems to be solved by the invention] Such devices that have been used in the past have large device configurations, are expensive, and require samples to be placed in a vacuum or sample pretreatment. It was inevitable that the measurements would be time-consuming.

本発明は上述した点に鑑みてなされたものであり、比較
的簡単な構成で薄膜の物性、特性あるいは厚さに関する
情報を得ることのできる新規な薄膜分析計を提供するこ
とを目的としている。
The present invention has been made in view of the above-mentioned points, and it is an object of the present invention to provide a novel thin film analyzer that can obtain information regarding the physical properties, characteristics, or thickness of a thin film with a relatively simple configuration.

[問題点を解決するための手段] この目的を達成するため、本発明の薄膜分析計は、コロ
ナ放電によりキャリアガスを励起しキャリアガスの励起
種を生成する手段と、該励起種の通路に配置されるコレ
クタ電極と、該コレクタ電極の励起種が当る面に保持さ
れる薄膜試料と、前記励起種生成手段とコレクタ電極と
の間に前記薄膜試料に面して配置される中間電極とから
構成されることを特徴としている。
[Means for Solving the Problems] In order to achieve this object, the thin film analyzer of the present invention includes means for exciting a carrier gas by corona discharge to generate excited species of the carrier gas, and a passageway for the excited species. A collector electrode arranged, a thin film sample held on a surface of the collector electrode that the excited species contacts, and an intermediate electrode arranged facing the thin film sample between the excited species generating means and the collector electrode. It is characterized by being configured.

[作用] コレクタ電極に保持された薄膜試料に励起種が当たると
、aM’J表面の分子は励起種の持つエネルギーにより
イオン化され、表面にはそのイオンと電子が生成される
。このイオンあるいは電子の母を中間電極あるいはコレ
クタ電極を用いて検出することにより薄膜の物性、特性
あるいは厚さに関する情報を得る。
[Operation] When the excited species hits the thin film sample held on the collector electrode, the molecules on the aM'J surface are ionized by the energy of the excited species, and the ions and electrons are generated on the surface. By detecting this ion or electron mother using an intermediate electrode or a collector electrode, information regarding the physical properties, characteristics, or thickness of the thin film can be obtained.

以下、図面に基づき本発明の一実施例を詳説する。Hereinafter, one embodiment of the present invention will be explained in detail based on the drawings.

[実施例] 第1図は本発明の一実施例の構成を示す概略図である。[Example] FIG. 1 is a schematic diagram showing the configuration of an embodiment of the present invention.

図において1は接地電位にあるシールド電極、2はコレ
クタ電極、3はコレクタ電極表面に保持された有機薄膜
試料、4は薄膜3の周辺部表面に接触するように配置さ
れる第2コレクタ電極、5は各電極間の絶縁を保つため
の絶縁体、6は励起種を作成するための放電管、7は放
電管6と薄膜試料3との間に配置される網状の中間電極
である。
In the figure, 1 is a shield electrode at ground potential, 2 is a collector electrode, 3 is an organic thin film sample held on the surface of the collector electrode, 4 is a second collector electrode arranged so as to be in contact with the peripheral surface of the thin film 3, 5 is an insulator for maintaining insulation between each electrode, 6 is a discharge tube for creating excited species, and 7 is a mesh-like intermediate electrode arranged between the discharge tube 6 and the thin film sample 3.

上記放電管6は筒状電極8と、キャリアガス例えばアル
ゴンを筒状電極8内に導くバイブ9と、針状電極10と
、絶縁栓11から構成され、電源12により電極8.1
0間に高電圧を印加しコロナ放電を生起させると、励起
アルゴンAr本 (励起種)が生成される。この励起種
は電荷は持たないが比較的大きなエネルギーを持ち、キ
ャリアガスの流れに乗って筒状電極8の開放端から薄膜
試料3へ向けて流れて行く。この励起種が有機薄膜試料
(Org)と接触すると、薄膜試料は励起種の持つエネ
ルギーにより下式に従ってイオン化される。
The discharge tube 6 is composed of a cylindrical electrode 8, a vibrator 9 that guides a carrier gas such as argon into the cylindrical electrode 8, a needle electrode 10, and an insulating plug 11.
When a high voltage is applied between zero and a corona discharge is generated, excited argon (excited species) is generated. Although this excited species has no electric charge, it has relatively large energy and flows from the open end of the cylindrical electrode 8 toward the thin film sample 3 along with the flow of the carrier gas. When this excited species comes into contact with the organic thin film sample (Org), the thin film sample is ionized by the energy of the excited species according to the following formula.

Ar  *  +Qrg−+Org+  +e−+、A
r  ・ (1)このようにして生成されたe−は以下
のような各種モードで検出することが可能である。
Ar* +Qrg-+Org+ +e-+, A
r.(1) The e- generated in this way can be detected in various modes as described below.

[モード△:コレクタ1M12.4に負電圧Vaを印加
し、電極7に流れる電流(aを測定する]このモードで
は、コレクタ電極2,4にかけた負電圧のため試料表面
から飛出した電子e−を電極7により検出することがで
きる。この時、電圧Vaと電流1aのva −1a曲線
は例えば第2図のように飽和特性を示す。その飽和電流
1sは試料表面に存在する物質の平均分子量に対応する
ので、飽和電流を求めれば試料表面の平均分子量を求め
ることが可能である。
[Mode △: Negative voltage Va is applied to the collector 1M12.4, and the current (a) flowing through the electrode 7 is measured] In this mode, the electrons e ejected from the sample surface due to the negative voltage applied to the collector electrodes 2 and 4 - can be detected by the electrode 7. At this time, the va -1a curve of the voltage Va and the current 1a shows a saturation characteristic as shown in Fig. 2.The saturation current 1s is the average of the substances present on the sample surface. Since it corresponds to the molecular weight, it is possible to determine the average molecular weight of the sample surface by determining the saturation current.

尚、そのためには、分子陽既知のいくつかの化合物を薄
膜試料として平均分子量と飽和電流との間の関係を求め
ておき、その関係に基づいて未知の薄膜試料の飽和電流
からその平均分子量を求めれば良い。
In order to do this, first calculate the relationship between the average molecular weight and saturation current using several compounds whose molecules are known as thin film samples, and then calculate the average molecular weight from the saturation current of the unknown thin film sample based on that relationship. Just ask.

[モードC:コレクタ電極2に負電圧vbを印加し、雪
原4に流れる電流1bを測定する1このモードでは、薄
膜試料表面に溜った電子を測定することができる。Vb
−1b曲線はモードAのVa−1a曲線と同様な飽和特
性を示し、同様にして試料表面の平均分子量を求めるこ
とが可能である。
[Mode C: Applying a negative voltage vb to the collector electrode 2 and measuring the current 1b flowing through the snow field 41 In this mode, the electrons accumulated on the surface of the thin film sample can be measured. Vb
The -1b curve exhibits saturation characteristics similar to the Va-1a curve of mode A, and the average molecular weight on the sample surface can be determined in the same manner.

[モードC:コレクタ電極4と電極7に正電圧VCを印
加し、コレクタ電極2に流れる電流[Cを測定するコ このモードCでは、電極4.7にかけた正電圧によりコ
レクタ電極2にはOrg+に対応するイオン電流1cが
流れる。この電流1cの値はモードA、Bにおける電子
電流Ia、Ibと略同じ値になる筈であるが、試料の膜
厚によってVc−1c曲線の形が若干変る。従って、予
め膜厚既知のいくつかの試料についてVc−1c曲線の
変化を調べておけば、膜厚未知の試料のVC−IC曲線
からその試料の膜厚を求めることが可能である。
[Mode C: A positive voltage VC is applied to the collector electrode 4 and the electrode 7, and the current [C flowing to the collector electrode 2] is measured. In this mode C, the positive voltage applied to the electrode 4.7 causes the collector electrode 2 to An ionic current 1c corresponding to the current flows. The value of this current 1c should be approximately the same as the electron currents Ia and Ib in modes A and B, but the shape of the Vc-1c curve changes slightly depending on the film thickness of the sample. Therefore, by examining changes in the Vc-1c curves of several samples whose film thicknesses are known in advance, it is possible to determine the film thickness of the sample from the VC-IC curve of the sample whose film thickness is unknown.

[モードC:コレクタ電極4と電極7に負電圧Vdを印
加し、コレクタ電極2に流れる電流1dを測定する1 このモードDでは、:a膜試料表面で生成された電子e
−のうち薄膜試料を透過して裏面に到達したものがコレ
クタ電極2へ流入して電流Idとして検出される。この
電流1dをモードBで測定した電流1b  (試料表面
で生成された全電子に関する情報)と比較することによ
り、薄膜の電子伝導度に関する情報を得ることができる
[Mode C: A negative voltage Vd is applied to the collector electrode 4 and the electrode 7, and the current 1d flowing to the collector electrode 2 is measured1. In this mode D, the electrons e generated on the surface of the a film sample
- of the current that passes through the thin film sample and reaches the back surface flows into the collector electrode 2 and is detected as the current Id. By comparing this current 1d with the current 1b measured in mode B (information regarding all electrons generated on the sample surface), information regarding the electronic conductivity of the thin film can be obtained.

尚、いずれのモードにおいても、電流の測定にはフロー
ティング増幅器を使用し、測定したい電荷に合わせて捕
集に適した電圧をかければ、より完全に全電流が測定で
きる。
In either mode, if a floating amplifier is used to measure the current and a voltage suitable for collection is applied in accordance with the charge to be measured, the total current can be measured more completely.

又、電極7やコレクタ電極4に印加する電圧は、定電圧
でも良いが、O←→+V(又は−V)の矩形波、正弦波
あるいはパルスとし、電極2に流れる電流の時間変化や
位相のズレを測定すれば、膜厚や膜の性質に関する情報
をより正確に得ることができる。
The voltage applied to the electrode 7 and the collector electrode 4 may be a constant voltage, but it may be a rectangular wave, a sine wave, or a pulse of O←→+V (or -V), and the voltage applied to the electrode 7 and the collector electrode 4 may be a rectangular wave, a sine wave, or a pulse. By measuring the deviation, more accurate information on film thickness and film properties can be obtained.

第3図は本発明の他の実施例を示し、コレクタ電極4と
電極7の間に更に第2の網状電極13が配置されている
FIG. 3 shows another embodiment of the invention, in which a second mesh electrode 13 is further arranged between the collector electrode 4 and the electrode 7.

この実施例では第1図の実施例で説明したA〜Dの各モ
ードに加え、以下のような測定を行うことが可能である
In this embodiment, in addition to the modes A to D described in the embodiment of FIG. 1, the following measurements can be performed.

即ち、電極13に正電圧を印加しておき、更にこの電極
にエタノール(アセトン等でも良い)Sを少吊付けると
、エタノールが励起種Ar率により下式に従ってイオン
化されてSH+が生成さT八 れる。
That is, when a positive voltage is applied to the electrode 13 and a small amount of ethanol (such as acetone is also acceptable) is hung on this electrode, the ethanol is ionized by the excited species Ar ratio according to the following formula, and SH+ is generated. It will be done.

Ar率+χS→ SH÷+S  (S−H)−+Ar 爪          に ・・・(2) このSH+が薄膜試料表面に到達すると、試料 料Mのプロトン親和力がエタノールSのプロトン親和力
よりも大きい場合、5TnH÷と試料Mとのプロトン移
行反応により、下式に従って試料のプロトン化分子イオ
ン(MH”、M2R十等)が試料表面で生成される。
Ar rate + χS → SH ÷ + S (S - H) - + Ar Nail... (2) When this SH+ reaches the thin film sample surface, if the proton affinity of sample material M is greater than that of ethanol S, 5TnH By the proton transfer reaction between ÷ and sample M, protonated molecular ions (MH", M2R, etc.) of the sample are generated on the sample surface according to the following formula.

81−1”+yM  → M、H++・・・ηへ ・・・ (3) 電極7.13.4に適当な正電圧を印加し、電極2に流
れる電流を測定すれば、試料表面で生成されたプロトン
化試料分子イオンの但に対応した情報が得られ、薄膜試
料のプロトン伝導性に関する情報を得ることが可能であ
る。
81-1"+yM → M, H++...to η... (3) If an appropriate positive voltage is applied to electrode 7.13.4 and the current flowing to electrode 2 is measured, the current generated on the sample surface can be determined. Information corresponding to the protonated sample molecular ions can be obtained, and information regarding the proton conductivity of the thin film sample can be obtained.

尚、電極13に負電圧を印加し、電極2に流れる電流を
測定すれば、試料表面で生成された負イオンを検出する
ことができる。
Note that by applying a negative voltage to the electrode 13 and measuring the current flowing through the electrode 2, negative ions generated on the sample surface can be detected.

又、電極4により試料表面に溜るイオン電流を測定する
こともできる。
Furthermore, the ion current accumulated on the sample surface can also be measured using the electrode 4.

第4図は本発明の更に他の実施例を示し、本実施例では
中間電極7として第1図の実施例のような網状電極では
なく、薄膜試料の表面に先端が近接するように配置され
る針状電極を用いている。
FIG. 4 shows still another embodiment of the present invention. In this embodiment, the intermediate electrode 7 is not a mesh electrode as in the embodiment of FIG. 1, but is arranged so that its tip is close to the surface of the thin film sample. A needle-like electrode is used.

この針状電極は先端の曲率が例えば0.1μ−程度に尖
らせると共に、先端を除き絶縁被膜で包まれている。こ
の先端と試料表面との距離は可変とされ、且つ設定され
た距離を保って試料表面上で2次元的に移動できるよう
な移動機構により保持される。尚、針状電極は試料表面
との距離のみ可変とし、試料の方を2次元的に移動させ
るようにしても良い。
The tip of this needle-like electrode has a sharp curvature of, for example, about 0.1 .mu.m, and is covered with an insulating coating except for the tip. The distance between this tip and the sample surface is variable, and the tip is held by a moving mechanism that can two-dimensionally move on the sample surface while maintaining a set distance. Note that the needle-like electrode may be configured to change only the distance from the sample surface so that the sample is moved two-dimensionally.

そして、測定は前述した第1図の実施例で説明したA−
0の各モードで全く同様に行われる。電極4により全電
流に関する情報が、電極7によりその先端が而している
試料表面の微小領域のみに関する情報が夫々得られ、電
極7又は試料を適宜移動させることにより、測定領域を
任意に選択することができる。
Then, the measurement is carried out using the A-
This is done in exactly the same way in each mode. The electrode 4 provides information on the total current, and the electrode 7 provides information on only the micro area on the sample surface where the tip is located, and the measurement area can be arbitrarily selected by moving the electrode 7 or the sample appropriately. be able to.

更に、電極4に0←→十■または+V←→−■のように
変化する矩形波電圧を印加し、電極7に流れる電流の時
間変化や位相のずれを測定しても良い。
Furthermore, a rectangular wave voltage that changes as 0←→10■ or +V←→-■ may be applied to the electrode 4, and the time change or phase shift of the current flowing through the electrode 7 may be measured.

すべてのモードについて言えることであるが、電極にか
ける電圧の極性を逆にすることにより、(2)式におけ
る負イオンについても測定することができる。
Although this is true for all modes, negative ions in equation (2) can also be measured by reversing the polarity of the voltage applied to the electrodes.

各電流の測定に当っては、電極7と電極4、電極7と電
極2あるいは電極4と電極2のように2つの電極に流入
する電流を夫々同時に、Ilす定し比較するようにする
ことが、イオンや電子の挙動の違い、膜抵抗1表面電流
などの識別をより正確に行うことができるという点で好
ましい。
When measuring each current, the currents flowing into two electrodes, such as electrode 7 and electrode 4, electrode 7 and electrode 2, or electrode 4 and electrode 2, should be determined and compared at the same time. However, it is preferable in that it is possible to more accurately identify differences in the behavior of ions and electrons, the surface current of the membrane resistor 1, etc.

尚、各実施例において、電極1にヒータを埋め込むなど
により試料加熱手段を設け、試Itの温度を変化させて
電流の変化を調べることも、薄膜試料の温度依存性など
熱的性質(転移点、融点など)を知る上で重要な意味を
持つ。
In each example, it is also possible to provide a sample heating means by embedding a heater in the electrode 1, change the temperature of the sample, and examine the change in current. , melting point, etc.).

[効果コ 以上詳述した如く、本発明によれば、励起種によって直
接あるいは間接的に薄膜試料表面の分子をイオン化し、
その結果表面に発生した電子あるいはイオン量に関する
情報を各電極から得るという簡単な構成で、膜厚、電子
伝導性、プロトン伝導性2分子ω等試料の特性を分析す
ることができる薄膜分析計が実現される。
[Effects] As detailed above, according to the present invention, molecules on the surface of a thin film sample are directly or indirectly ionized by excited species,
As a result, a thin film analyzer with a simple configuration that obtains information on the amount of electrons or ions generated on the surface from each electrode can analyze sample characteristics such as film thickness, electron conductivity, and proton conductivity. Realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の構成を示す概略図、第2図
は電圧−電流特性の一例を示す図、第3図及び第4図は
夫々本発明の他の実施例を示す概略図である。 1:シールド電に2,4:コレクタ電極3:有i薄膜試
料 5:絶縁体
Fig. 1 is a schematic diagram showing the configuration of one embodiment of the present invention, Fig. 2 is a diagram showing an example of voltage-current characteristics, and Figs. 3 and 4 are schematic diagrams showing other embodiments of the present invention. It is a diagram. 1: Shield electrode 2, 4: Collector electrode 3: Thin film sample 5: Insulator

Claims (3)

【特許請求の範囲】[Claims] (1)コロナ放電によりキャリアガスを励起しキャリア
ガスの励起種を生成する手段と、該励起種の通路に配置
されるコレクタ電極と、該コレクタ電極の励起種が当る
面に保持される薄膜試料と、前記励起種生成手段とコレ
クタ電極との間に前記薄膜試料に面して配置される中間
電極とから構成されることを特徴とする薄膜分析計。
(1) A means for exciting a carrier gas by corona discharge to generate excited species of the carrier gas, a collector electrode disposed in a path of the excited species, and a thin film sample held on the surface of the collector electrode that is in contact with the excited species. and an intermediate electrode arranged facing the thin film sample between the excited species generating means and the collector electrode.
(2)前記中間電極は網状電極である特許請求の範囲第
1項記載の薄膜分析計。
(2) The thin film analyzer according to claim 1, wherein the intermediate electrode is a mesh electrode.
(3)前記中間電極は針状電極であり、該針状電極の先
端が薄膜試料に近接配置される特許請求の範囲第1項記
載の薄膜分析計。
(3) The thin film analyzer according to claim 1, wherein the intermediate electrode is a needle-like electrode, and the tip of the needle-like electrode is placed close to the thin film sample.
JP27378186A 1986-11-17 1986-11-17 Thin film analyzer Granted JPS63127155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27378186A JPS63127155A (en) 1986-11-17 1986-11-17 Thin film analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27378186A JPS63127155A (en) 1986-11-17 1986-11-17 Thin film analyzer

Publications (2)

Publication Number Publication Date
JPS63127155A true JPS63127155A (en) 1988-05-31
JPH058985B2 JPH058985B2 (en) 1993-02-03

Family

ID=17532487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27378186A Granted JPS63127155A (en) 1986-11-17 1986-11-17 Thin film analyzer

Country Status (1)

Country Link
JP (1) JPS63127155A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223085A (en) * 1990-03-27 1992-08-12 Internatl Business Mach Corp <Ibm> Corona air ionizer and method for in hibiting the generation of fine particles
RU2656129C1 (en) * 2017-06-14 2018-05-31 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" Method of layer-by-layer analysis of thin films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223085A (en) * 1990-03-27 1992-08-12 Internatl Business Mach Corp <Ibm> Corona air ionizer and method for in hibiting the generation of fine particles
RU2656129C1 (en) * 2017-06-14 2018-05-31 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" Method of layer-by-layer analysis of thin films

Also Published As

Publication number Publication date
JPH058985B2 (en) 1993-02-03

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