JPS63152251U - - Google Patents

Info

Publication number
JPS63152251U
JPS63152251U JP4464087U JP4464087U JPS63152251U JP S63152251 U JPS63152251 U JP S63152251U JP 4464087 U JP4464087 U JP 4464087U JP 4464087 U JP4464087 U JP 4464087U JP S63152251 U JPS63152251 U JP S63152251U
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion element
transparent
substrate
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4464087U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4464087U priority Critical patent/JPS63152251U/ja
Publication of JPS63152251U publication Critical patent/JPS63152251U/ja
Pending legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の第1実施例を示す断面図、第
2図は同平面図、第3図は第2実施例を示す断面
図、第4図は第3実施例を示す断面図、第5図は
従来例を示す断面図である。 1…光電変換素子、2…ガラス基板(透光性絶
縁基板)、2A…受光面、3,5…導電膜、4…
光電変換膜、9…不透光性基板、10…凹部、1
1…不透光性樹脂。
FIG. 1 is a sectional view showing the first embodiment of the present invention, FIG. 2 is a plan view thereof, FIG. 3 is a sectional view showing the second embodiment, and FIG. 4 is a sectional view showing the third embodiment. FIG. 5 is a sectional view showing a conventional example. DESCRIPTION OF SYMBOLS 1... Photoelectric conversion element, 2... Glass substrate (transparent insulating substrate), 2A... Light receiving surface, 3, 5... Conductive film, 4...
Photoelectric conversion film, 9... Opaque substrate, 10... Concave portion, 1
1... Opaque resin.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 透光性絶縁基板上に透光性導電膜と、P・I・
Nの非晶質半導体層と、導電膜とを順次積層して
成る光電変換素子において、不透光性基板の一面
に凹部を設け、この凹部に前記光電変換素子をそ
の受光面を露出して埋め込み、前記不透光性基板
と光電変換素子との隙間に不透光性樹脂を充填す
ることを特徴とする光電変換素子。
A transparent conductive film on a transparent insulating substrate, a P.I.
In a photoelectric conversion element formed by sequentially laminating an N amorphous semiconductor layer and a conductive film, a recess is provided on one surface of an opaque substrate, and the photoelectric conversion element is placed in the recess with its light-receiving surface exposed. A photoelectric conversion element characterized in that a gap between the non-transparent substrate and the photoelectric conversion element is filled with a non-transparent resin.
JP4464087U 1987-03-26 1987-03-26 Pending JPS63152251U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4464087U JPS63152251U (en) 1987-03-26 1987-03-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4464087U JPS63152251U (en) 1987-03-26 1987-03-26

Publications (1)

Publication Number Publication Date
JPS63152251U true JPS63152251U (en) 1988-10-06

Family

ID=30862644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4464087U Pending JPS63152251U (en) 1987-03-26 1987-03-26

Country Status (1)

Country Link
JP (1) JPS63152251U (en)

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