JPS6316465B2 - - Google Patents

Info

Publication number
JPS6316465B2
JPS6316465B2 JP11277684A JP11277684A JPS6316465B2 JP S6316465 B2 JPS6316465 B2 JP S6316465B2 JP 11277684 A JP11277684 A JP 11277684A JP 11277684 A JP11277684 A JP 11277684A JP S6316465 B2 JPS6316465 B2 JP S6316465B2
Authority
JP
Japan
Prior art keywords
crucible
film
mold
manufacturing
boron carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11277684A
Other languages
Japanese (ja)
Other versions
JPS60258465A (en
Inventor
Masatomi Okumura
Takeo Ido
Iwao Kawamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11277684A priority Critical patent/JPS60258465A/en
Publication of JPS60258465A publication Critical patent/JPS60258465A/en
Publication of JPS6316465B2 publication Critical patent/JPS6316465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は電子ビーム加熱蒸着等に用いる電子
ビーム加熱用ルツボの製造方法に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing an electron beam heating crucible used for electron beam heating evaporation and the like.

〔従来技術〕[Prior art]

第1図は一般的な電子ビーム加熱蒸着装置の概
略を示す原理図である。電子ビーム加熱蒸着は、
排気系1aにより真空に排気された容器1内でフ
イラメント2を加熱し、蒸発源3を入れた銅製の
ルツボ4と蒸着する基板5の間に数十kVの高電
圧を印加し、フイラメント2で発生した電子を加
速して蒸発源3に照射し、蒸発源3を加熱蒸発さ
せて基板5の表面に蒸着膜6を形成するものであ
る。このような装置において、ルツボ4そのもの
は溶融してはならず、またルツボ4と絶縁体7と
の接着が離れてはならないため、ルツボ4および
絶縁体7は水冷されている。このため蒸発源3に
印加された熱量のかなりの量は蒸発源3およびル
ツボ4を通して逃げ、蒸発に有効な熱量は少なく
なる。こうして印加した電力に対する蒸発効率は
小さくなり、特に銅、銀、アルミニウム等の熱伝
導の良い物質はこの傾向が大きい。
FIG. 1 is a principle diagram showing an outline of a general electron beam heating vapor deposition apparatus. Electron beam heating evaporation is
The filament 2 is heated in the container 1 which is evacuated by the exhaust system 1a, and a high voltage of several tens of kV is applied between the copper crucible 4 containing the evaporation source 3 and the substrate 5 to be evaporated. The generated electrons are accelerated and irradiated onto the evaporation source 3, and the evaporation source 3 is heated and evaporated to form a deposited film 6 on the surface of the substrate 5. In such an apparatus, the crucible 4 and the insulator 7 are water-cooled because the crucible 4 itself must not melt and the bond between the crucible 4 and the insulator 7 must not separate. Therefore, a considerable amount of the heat applied to the evaporation source 3 escapes through the evaporation source 3 and the crucible 4, and the amount of heat effective for evaporation decreases. In this way, the evaporation efficiency with respect to the applied electric power becomes small, and this tendency is particularly strong for materials with good thermal conductivity such as copper, silver, and aluminum.

そこで蒸発効率を改良する手段としてルツボ4
と蒸発源3の間を断熱するため、蒸発源3を断熱
性に優れたセラミクスの電子ビーム加熱用ルツボ
8の中に入れて加熱することが考えられる。この
場合、絶縁体であるセラミクスのルツボ8を用い
ても、セラミクスの壁を飛びこえて蒸発源3との
間に放電が生じ、蒸発源3に高圧を印加すること
ができる。上記目的に使用するルツボ8としては
耐熱性で、高融点のヒートシヨツクに強い材料
で、かつ安価であることが望ましい。
Therefore, as a means to improve evaporation efficiency, crucible 4
In order to insulate the space between the evaporation source 3 and the evaporation source 3, it is conceivable to heat the evaporation source 3 by placing it in an electron beam heating crucible 8 made of ceramic with excellent heat insulation properties. In this case, even if the crucible 8 made of ceramics, which is an insulator, is used, a discharge is generated between the crucible 8 and the evaporation source 3 over the ceramic wall, and high voltage can be applied to the evaporation source 3. It is desirable that the crucible 8 used for the above purpose be made of a material that is heat resistant, has a high melting point, is resistant to heat shock, and is inexpensive.

従来のルツボ8の製造方法として、セラミクス
粉末をプレス成形して焼成する方法があるが、こ
の方法により製造されたルツボは焼成品であるた
め、組織が緻密でヒートシヨツクに弱く、電子ビ
ーム加熱用に使用すると割れを発生することが多
く実用には向かない。
A conventional manufacturing method for the crucible 8 is to press-form ceramic powder and fire it, but since the crucible manufactured by this method is a fired product, it has a dense structure and is susceptible to heat shock, making it difficult to use for electron beam heating. When used for this purpose, it often cracks and is not suitable for practical use.

従来の他の製造方法として、セラミクスを溶射
して製造する方法がある。第2図Aは従来の製造
方法を示す断面図、Bは製造されたルツボの断面
図、Cはその斜視図であり、ルツボ8の製造方法
は第2図Aを示すように、プラズマ溶射装置9か
らジルコニア(ZrO2)、アルミナ(Al2O3)等の
セラミクス粉体10をルツボ形状をした型11に
溶射してセラミクス厚膜12を形成し、その後こ
れを離型してルツボ8を製造する方法である。こ
の方法により製造されたルツボ8はセラミクス厚
膜12の中に、溶射膜の特徴である空孔が多く存
在するため、ヒートシヨツクに強いものとなる。
Another conventional manufacturing method includes a method of manufacturing by thermal spraying ceramics. FIG. 2A is a sectional view showing a conventional manufacturing method, B is a sectional view of the manufactured crucible, and C is a perspective view thereof.The method of manufacturing the crucible 8 is as shown in FIG. From step 9, ceramic powder 10 such as zirconia (ZrO 2 ) or alumina (Al 2 O 3 ) is thermally sprayed onto a crucible-shaped mold 11 to form a ceramic thick film 12 , and then the mold is released to form a crucible 8 . This is a method of manufacturing. The crucible 8 manufactured by this method has many pores in the ceramic thick film 12, which is a characteristic of thermally sprayed films, and is therefore resistant to heat shock.

しかしながらこのような従来の溶射によるルツ
ボ8の製造方法においては、ジルコニアやアルミ
ナ等を金属またはセラミクスで作られた型に直接
溶射していたため、溶射材料であるセラミクス厚
膜12と型11間の熱膨張の相違および皮膜形成
時におけるセラミクス粒子の自己結合力などによ
り、溶射の途中におけるセラミクス厚膜12の型
11からの剥離や割れ、ならびに離型時における
割れが発生することが多く、ルツボ形状に成形す
ることが困難であつた。
However, in such a conventional method of manufacturing the crucible 8 by thermal spraying, zirconia, alumina, etc. are directly sprayed onto a mold made of metal or ceramics, so the heat between the ceramic thick film 12, which is the thermal spraying material, and the mold 11 is Due to the difference in expansion and the self-bonding force of ceramic particles during film formation, the ceramic thick film 12 often peels off or cracks from the mold 11 during thermal spraying, and cracks occur during demolding, resulting in a crucible shape. It was difficult to mold.

〔発明の概要〕[Summary of the invention]

この発明は以上のような欠点を改善する目的で
なされたもので、プラズマ溶射により粒径10〜
80μmの炭化ホウ素(B4C)粉体を溶射して皮膜
を形成し、さらにその上に耐熱性のルツボ材を溶
射して複合厚膜を形成することにより、ヒートシ
ヨツクに強く、容易かつ安価に製造できる電子ビ
ーム加熱用ルツボの製造方法を提案するものであ
る。
This invention was made with the aim of improving the above-mentioned drawbacks.
By thermally spraying 80μm boron carbide (B 4 C) powder to form a film, and then thermally spraying heat-resistant crucible material on top of it to form a composite thick film, it is resistant to heat shock, easy and inexpensive. This paper proposes a method for manufacturing a crucible for electron beam heating that can be manufactured in a number of steps.

〔発明の実施例〕[Embodiments of the invention]

以下この発明の実施例を図について述べる。第
3図A,Bはこの発明の一実施例による製造方法
を示す断面図、Cは製造されたルツボの断面図、
Dはその斜視図である。製造方法はまず第3図A
に示す所望のルツボ形状を有する金属製の型11
を回転させ、その表面にプラズマ溶射装置9より
炭化ホウ素粉体13を厚さ約50μmに溶射し、第
1層として炭化ホウ素膜14を形成する。次いで
炭化ホウ素膜14の上にルツボ材に適するジルコ
ニアまたはアルミナ等のセラミクス粉体10を所
望の厚さまで溶射して第2層のセラミクス厚膜1
2を形成し、全体として複合厚膜15を形成す
る。その後に型11より複合厚膜15を離型して
ルツボ8を得る。ここで炭化ホウ素粉体13の粒
径は10〜80μmが望ましい。粒径が極端に細いと、
炭化ホウ素粉体13は型11への食込みが悪く、
かつ溶射された粒子間の自己結合が強すぎて、溶
射の途中で剥離や割れを生じる。また粒径が大き
過ぎると溶融させることが困難で、膜の形成効率
が悪くなる。形成する炭化ホウ素膜14の膜厚は
30μm以上であれば十分である。またセラミクス
粉体10の溶射条件は、ジルコニアについては粒
径10〜100μmの粉体を用い、プラズマガスには窒
素と水素の混合ガスを用い、印加電圧は直流
75V、電流は500A、プラズマ溶射装置9と型1
1の距離は10cmとする。アルミナについては粒径
15〜55μmの粉体を用い、その他の条件はジルコ
ニアの場合とほぼ同じである。プラズマガスとし
てはアルゴンと水素の混合ガスを用いることも可
能である。また炭化ホウ素の溶射条件について
は、プラズマ溶射装置9と型11の距離は15cmと
し、その他の条件はジルコニア、アルミナの場合
とほぼ同じである。ジルコニア等のルツボ材とし
てのセラミクス厚膜12の厚さは厚ければ厚いほ
ど機械的に強いものとなり、必要に応じて調整で
きる。
Embodiments of the invention will be described below with reference to the drawings. 3A and 3B are cross-sectional views showing a manufacturing method according to an embodiment of the present invention, C is a cross-sectional view of a manufactured crucible,
D is a perspective view thereof. The manufacturing method is first shown in Figure 3A.
A metal mold 11 having the desired crucible shape shown in
is rotated, and boron carbide powder 13 is thermally sprayed to a thickness of about 50 μm on the surface by plasma spraying device 9 to form a boron carbide film 14 as a first layer. Next, a ceramic powder 10 such as zirconia or alumina suitable for a crucible material is thermally sprayed onto the boron carbide film 14 to a desired thickness to form a second layer of ceramic thick film 1.
2 to form a composite thick film 15 as a whole. Thereafter, the composite thick film 15 is released from the mold 11 to obtain the crucible 8. Here, the particle size of the boron carbide powder 13 is preferably 10 to 80 μm. If the particle size is extremely small,
The boron carbide powder 13 has poor penetration into the mold 11;
In addition, the self-bonding between sprayed particles is too strong, resulting in peeling and cracking during spraying. Furthermore, if the particle size is too large, it will be difficult to melt and the film formation efficiency will deteriorate. The thickness of the boron carbide film 14 to be formed is
A thickness of 30 μm or more is sufficient. The thermal spraying conditions for the ceramic powder 10 are as follows: zirconia powder with a particle size of 10 to 100 μm is used, a mixed gas of nitrogen and hydrogen is used as the plasma gas, and the applied voltage is DC.
75V, current is 500A, plasma spray equipment 9 and type 1
The distance of 1 is 10cm. Particle size for alumina
Powder of 15 to 55 μm was used, and other conditions were almost the same as in the case of zirconia. It is also possible to use a mixed gas of argon and hydrogen as the plasma gas. Regarding the spraying conditions for boron carbide, the distance between the plasma spraying device 9 and the mold 11 was 15 cm, and the other conditions were almost the same as those for zirconia and alumina. The thicker the ceramic thick film 12, such as zirconia, as the crucible material, the stronger it will be mechanically, and can be adjusted as necessary.

このように、型11に炭化ホウ素粉体13を溶
射し、次いでジルコニアまたはアルミナ等のセラ
ミクス粉体10を溶射することにより、炭化ホウ
素粉体13溶射時に型11に適当な表面荒れが生
じ、炭化ホウ素膜14と型11の間には適当な密
着力が得られる。そして炭化ホウ素膜14の表面
に凹凸が存在するため、その上に溶射したセラミ
クス厚膜12は炭化ホウ素膜14と強く結合す
る。また炭化ホウ素膜14およびセラミクス厚膜
12中の空孔が溶射時のヒートシヨツクを吸収す
る。このため溶射時および離型時に剥離や割れを
発生させずにルツボ8を容易に製造することがで
きる。得られたルツボ8は炭化ホウ素膜14が内
側すなわち蒸発源3と接触する側に存在するが、
炭化ホウ素と反応すると好ましくない場合は、ル
ツボ8製造後に炭化ホウ素膜14を機械的に削り
落とすか、あるいは酸化雰囲気中で加熱して取り
除くことができる。
In this way, by thermally spraying the boron carbide powder 13 onto the mold 11 and then thermally spraying the ceramic powder 10 such as zirconia or alumina, an appropriate surface roughness is generated on the mold 11 during the thermal spraying of the boron carbide powder 13, resulting in carbonization. Appropriate adhesion can be obtained between the boron film 14 and the mold 11. Since there are irregularities on the surface of the boron carbide film 14, the ceramic thick film 12 sprayed thereon is strongly bonded to the boron carbide film 14. Further, the pores in the boron carbide film 14 and the ceramic thick film 12 absorb heat shock during thermal spraying. Therefore, the crucible 8 can be easily manufactured without peeling or cracking during thermal spraying and demolding. The obtained crucible 8 has the boron carbide film 14 on the inside, that is, on the side that contacts the evaporation source 3,
If the reaction with boron carbide is undesirable, the boron carbide film 14 can be removed by mechanically scraping it off after the crucible 8 is manufactured or by heating it in an oxidizing atmosphere.

第4図Aは他の実施例による製造方法を示す断
面図、Bは製造されたルツボの断面図、Cはその
斜視図である。この製造方法は凹形の型11を使
用し、第1層に炭化ホウ素膜14を溶射した後、
第2層としてジルコニアまたはアルミナ等のセラ
ミクス膜12を形成すれば蒸発源3との反応はな
くなり、かつ炭化ホウ素は電気抵抗が少ないため
ルツボ4との間の導通が良くなり、ルツボ4の周
囲の放電を少なくすることができる。
FIG. 4A is a sectional view showing a manufacturing method according to another embodiment, B is a sectional view of the manufactured crucible, and FIG. 4C is a perspective view thereof. This manufacturing method uses a concave mold 11, and after spraying a boron carbide film 14 on the first layer,
If a ceramic film 12 such as zirconia or alumina is formed as the second layer, there will be no reaction with the evaporation source 3, and since boron carbide has low electrical resistance, conduction between the crucible 4 and the surrounding area of the crucible 4 will be improved. Discharge can be reduced.

なお上記実施例では型11の材質は金属とした
が、セラミクスを用いることも可能であり、また
型11は表面をわずかに研磨することにより繰返
し使用が可能である。型11はわずかの抜きテー
パを付けておけば離型は容易に行える。またルツ
ボ材としてジルコニアまたはアルミナ等のセラミ
クスの例を示したが、白金、タングステン、モリ
ブデン等の他のルツボ材でもよく、炭化ホウ素自
体をルツボ材とすることもでき、これらの場合も
ジルコニア、アルミナの場合とほぼ同様の条件で
溶射を行うことができる。
In the above embodiment, the material of the mold 11 is metal, but it is also possible to use ceramics, and the mold 11 can be used repeatedly by slightly polishing the surface. If the mold 11 has a slight draft taper, mold release can be easily performed. In addition, although examples of ceramics such as zirconia or alumina have been shown as crucible materials, other crucible materials such as platinum, tungsten, and molybdenum may also be used, and boron carbide itself can also be used as the crucible material, and in these cases, zirconia, alumina, etc. Thermal spraying can be carried out under almost the same conditions as in the case of .

〔発明の効果〕 以上のように、この発明によれば、ルツボ形状
の型に炭化ホウ素をわずかに溶射し、次いでルツ
ボ材を溶射して複合厚膜を形成し離型するように
したので、溶射時または離型時の剥離や割れの発
生がなく、容易かつ安価に電子ビーム加熱用ルツ
ボを製造することができ、製造されたルツボは空
孔を多く含むため熱的歪が吸収でき、ヒートシヨ
ツクに強くなり、長時間使用できるという効果が
ある。
[Effects of the Invention] As described above, according to the present invention, a small amount of boron carbide is sprayed onto a crucible-shaped mold, and then the crucible material is sprayed to form a composite thick film and the mold is released. There is no peeling or cracking during thermal spraying or mold release, and it is possible to easily and inexpensively manufacture crucibles for electron beam heating.The manufactured crucibles contain many pores, so they can absorb thermal strain and are heat-resistant. It has the effect of being resistant to shock and can be used for a long time.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は一般的な電子ビーム加熱蒸着装置の概
略を示す原理図、第2図Aは従来の電子ビーム加
熱用ルツボの製造方法を示す断面図、Bは製造さ
れたルツボの断面図、Cはその斜視図、第3図
A,Bはこの発明の一実施例による製造方法を示
す断面図、Cは製造されたルツボの断面図、Dは
その斜視図、第4図Aは他の実施例による製造方
法を示す断面図、Bは製造されたルツボの断面
図、Cはその斜視図である。 図において、1は容器、2はフイラメント、3
は蒸発源、4,8はルツボ、5は基板、9はプラ
ズマ溶射装置、10はセラミクス粉体、11は
型、12はセラミクス厚膜、13は炭化ホウ素粉
体、14は炭化ホウ素膜、15は複合厚膜であ
る。なお、各図中、同一符号は同一または相当部
分を示す。
Fig. 1 is a principle diagram showing the outline of a general electron beam heating evaporation device, Fig. 2 A is a sectional view showing a conventional manufacturing method of an electron beam heating crucible, B is a sectional view of the manufactured crucible, and C 3A and 3B are cross-sectional views showing a manufacturing method according to one embodiment of the present invention, C is a cross-sectional view of the manufactured crucible, D is a perspective view thereof, and FIG. 4 A is another embodiment. A cross-sectional view showing a manufacturing method according to an example, B is a cross-sectional view of the manufactured crucible, and C is a perspective view thereof. In the figure, 1 is a container, 2 is a filament, 3
1 is an evaporation source; 4 and 8 are crucibles; is a composite thick film. In each figure, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】 1 ルツボ形状を有する型にプラズマ溶射により
粒径10〜80μmの炭化ホウ素粉体を溶射して皮膜
を形成し、さらにその上に耐熱性のルツボ材を溶
射して複合厚膜を形成し、その後離型することを
特徴とする電子ビーム加熱用ルツボの製造方法。 2 型が金属またはセラミクス製であることを特
徴とする特許請求の範囲第1項記載の電子ビーム
加熱用ルツボの製造方法。 3 ルツボ材がジルコニアまたはアルミナである
ことを特徴とする特許請求の範囲第1項または第
2項記載の電子ビーム加熱用ルツボの製造方法。 4 炭化ホウ素膜がルツボの内側または外側に形
成するものであることを特徴とする特許請求の範
囲第1項ないし第3項のいずれかに記載の電子ビ
ーム加熱用ルツボの製造方法。
[Claims] 1. Boron carbide powder with a particle size of 10 to 80 μm is sprayed onto a mold having a crucible shape by plasma spraying to form a film, and then a heat-resistant crucible material is further sprayed on top of the film to form a film with a composite thickness. A method for manufacturing a crucible for electron beam heating, characterized by forming a film and then releasing the mold. 2. The method for manufacturing an electron beam heating crucible according to claim 1, wherein the mold is made of metal or ceramics. 3. The method for manufacturing a crucible for electron beam heating according to claim 1 or 2, wherein the crucible material is zirconia or alumina. 4. The method for manufacturing a crucible for electron beam heating according to any one of claims 1 to 3, wherein the boron carbide film is formed on the inside or outside of the crucible.
JP11277684A 1984-06-01 1984-06-01 Manufacture of crucible for heating with electron beam Granted JPS60258465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11277684A JPS60258465A (en) 1984-06-01 1984-06-01 Manufacture of crucible for heating with electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11277684A JPS60258465A (en) 1984-06-01 1984-06-01 Manufacture of crucible for heating with electron beam

Publications (2)

Publication Number Publication Date
JPS60258465A JPS60258465A (en) 1985-12-20
JPS6316465B2 true JPS6316465B2 (en) 1988-04-08

Family

ID=14595211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11277684A Granted JPS60258465A (en) 1984-06-01 1984-06-01 Manufacture of crucible for heating with electron beam

Country Status (1)

Country Link
JP (1) JPS60258465A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5532064B2 (en) * 2012-02-29 2014-06-25 信越化学工業株式会社 Rare earth oxide-containing thermal spray substrate manufacturing method and laminate manufacturing method
JP6421525B2 (en) * 2013-10-09 2018-11-14 信越化学工業株式会社 Method for producing thermal spray molded body

Also Published As

Publication number Publication date
JPS60258465A (en) 1985-12-20

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