JPS63228433A - Optical information recording/reproducing/erasing member - Google Patents

Optical information recording/reproducing/erasing member

Info

Publication number
JPS63228433A
JPS63228433A JP62061604A JP6160487A JPS63228433A JP S63228433 A JPS63228433 A JP S63228433A JP 62061604 A JP62061604 A JP 62061604A JP 6160487 A JP6160487 A JP 6160487A JP S63228433 A JPS63228433 A JP S63228433A
Authority
JP
Japan
Prior art keywords
recording
gete
reproducing
excess
sb2te3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62061604A
Other languages
Japanese (ja)
Other versions
JP2629696B2 (en
Inventor
Takeo Ota
太田 威夫
Masami Uchida
内田 正美
Koichi Kodera
宏一 小寺
Kunihiro Matsubara
邦弘 松原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62061604A priority Critical patent/JP2629696B2/en
Publication of JPS63228433A publication Critical patent/JPS63228433A/en
Application granted granted Critical
Publication of JP2629696B2 publication Critical patent/JP2629696B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

PURPOSE:To obtain a recording member having high sensitivity and stabilized cycle characteristics by using a GeTe-Sb2Te3-excess Sb mixture. CONSTITUTION:When Sb2Te3 having 622 deg.C m.p. is into a thin film, the film has recording action by conversion into an amorphous phase and crystallization but the film has a low blackening (accompanied by crystallization) temp. and low thermal stability. By mixing the Sb2Te3 with GeTe having a higher m.p. and 725 deg.C Tm, the crystallization temp. is raised and superior thermal stability is provided. An Sb2Te3-GeTe film is, however, liable to cause the deterioration of signal quality in the cycle of heat recording (conversion into an amorphous phase) and erasing (crystallization) or in the cycle of recording and erasing in the reverse mode due to the phase separation of GeTe from Sb2Te3. I order to prevent the phase separation and to improve the cycle characteristics, excess Sb is added and an Sb2Te3-GeTe-excess Sb mixture is used.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、レーザビーム等により、情報を、高密度、大
容量で記録再生、及び消去できる光学情報記録再生消去
部材に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical information recording/reproducing/erasing member capable of recording, reproducing, and erasing information with high density and large capacity using a laser beam or the like.

従・来の技術 光デイスクメモリに関しては、ToとT e O2を主
成分とするT e Ox (0< x < 2−0 )
薄膜を用いた追記型のディスクがある。さらに、レーザ
光により、薄膜を加熱し、溶融し、急冷することにより
、非晶質化し、情報を記録し又これを加熱し、徐冷する
ことにより結晶化し、消去することができる材料として
は、S、R,0vshinsky(xス−アール・オプ
シンスキー)氏等の、カルコゲン材料G e 15Te
81Sb2S2等が知られている。又、A82S3や、
As  Se  あるいは、Sb2Se3等カルコゲン
元素と、周期律表第V族あるいは、Go等の第■族元素
等の組合せからなる薄膜等が広く知られている。これら
の薄膜にレーザ光で情報を記録し、その情報を消去する
方法としては、あらかじめ、薄膜を結晶化させておき、
これに夕φ1μmi絞ったレーザ光を、情報に応じて強
度変調を施こし、例えば、円盤状の記録ディスクを回転
せしめて照射し、このレーザ光照射部位は、薄膜の融点
以上に昇温し、かつ急冷し、非晶質化したドツトとして
情報の記録が行える。この情報を消去するに際しては、
ディスクの回転トラック方向に長いスポット光を照射す
ることにより、薄膜を加熱昇温させ、長いスポット光に
よる徐冷効果によって再び、結晶化させる方法が知られ
ている。
Regarding conventional optical disk memory, T e Ox (0< x < 2-0) whose main components are To and T e O2
There is a write-once type disc that uses a thin film. Furthermore, by heating a thin film with a laser beam, melting it, and rapidly cooling it, it becomes amorphous, recording information, and then heating it, slowly cooling it, crystallizes it, and erases it. , S, R, 0vshinsky (x R. Opshinsky) et al., chalcogen material G e 15Te
81Sb2S2 and the like are known. Also, A82S3,
Thin films made of a combination of a chalcogen element such as As Se or Sb2Se3 and an element of Group V or Group II of the periodic table, such as Go, are widely known. The method of recording information on these thin films with laser light and erasing that information is to crystallize the thin film in advance.
A laser beam focused by 1 μm in diameter is applied with intensity modulation according to the information, and is irradiated by rotating a disc-shaped recording disk, for example, and the area irradiated with the laser beam is heated to a temperature higher than the melting point of the thin film. Information can then be recorded as dots that are rapidly cooled and made amorphous. When deleting this information,
A method is known in which the thin film is heated and heated by irradiating it with a long spot light in the direction of the rotational track of the disk, and then crystallized again by the slow cooling effect of the long spot light.

発明が解決しようとする間過点 薄膜を加熱昇温し、溶融急冷および、加熱昇温徐冷等の
手段を用いる情報記録および消去可能な記録媒体におい
ては、加熱サイクルに対応して、信号品質が変動する場
合がある。この変動要因としては、記録スポット光およ
び、消去スポット光による400’C以上の急速な加熱
、冷却の多数回のくりかえし刺激による基板材質の熱的
機械的な損傷が考えられる。さらに、記録薄膜の熱的1
機械的な損傷が生ずる場合もある。記録薄膜については
、その構成組成によっては、膜中の組成、成分の場所的
な変化いわゆる偏析が発生する場合もある。
In an information recording and erasable recording medium using means such as heating a thin film at a high temperature, melting and rapidly cooling it, and heating and gradually cooling it, the signal quality is improved in accordance with the heating cycle. may vary. A possible cause of this variation is thermal and mechanical damage to the substrate material due to repeated stimulation of rapid heating to 400'C or more and cooling by the recording spot light and the erasing spot light many times. Furthermore, the thermal 1 of the recording thin film
Mechanical damage may also occur. Regarding the recording thin film, depending on its composition, local changes in the composition and components in the film, so-called segregation, may occur.

基板あるいは、記録膜が、以上のような変化を生じた場
合、記録再生、消去のサイクルにおいて、ノイ、ズの増
大を生じ、サイクル特性の劣化が発生するという問題点
があった。
When the substrate or the recording film undergoes such changes, there is a problem in that noise increases during recording/reproducing and erasing cycles, resulting in deterioration of cycle characteristics.

問題点を解決するための手段 本発明は、レーザ光等の照射により熱的に薄膜の状態を
変化させて情報を記録および消去する部材において、記
録と消去のサイクル特性を向上させることを目的として
、薄膜材料として、G o T 。
Means for Solving the Problems The present invention aims to improve the cycle characteristics of recording and erasing in a member that records and erases information by thermally changing the state of a thin film by irradiating it with laser light or the like. , as a thin film material, G o T .

と、Sb2T03からなる混合体に過剰なSbを含ませ
てなる材料を選び、これを基板に形成してなることを特
徴とする光学情報記録再生消去部材を提供するものであ
る。
The present invention provides an optical information recording/reproducing/erasing member characterized in that a material is selected from a mixture of Sb2T03 and Sb2T03 containing an excessive amount of Sb, and the material is formed on a substrate.

作  用 Sb2T03(融点622℃)は、薄膜化することによ
り、非晶質膜が得られ、非晶質化、結晶化の記録作用を
有する。しかしながら、その黒化(結晶化を伴う)温度
は、〜1oo℃と低く、熱的な安定性は低い。そこで、
融点の高いTm= 725℃のG o T oを混合す
ることにより、この黒化(結晶化)温度を、180℃以
上に上げることができる。
Function Sb2T03 (melting point: 622° C.) can be made into a thin film to obtain an amorphous film, and has a recording action of amorphization and crystallization. However, its blackening temperature (accompanied by crystallization) is as low as ~100° C., and its thermal stability is low. Therefore,
By mixing G o To with a high melting point of Tm = 725°C, this blackening (crystallization) temperature can be raised to 180°C or higher.

この混合膜は、熱的安定性がすぐれるものの、加熱記録
(非晶質化)消去(結晶化)あるいはその逆モードの記
録消去のサイクルにおいて、信号品質の低下が発生しや
すい。
Although this mixed film has excellent thermal stability, signal quality is likely to deteriorate during cycles of heating recording (amorphization) and erasing (crystallization) or the reverse mode of recording and erasing.

そこで本発明では、過剰なSbを含ませて、Sb2Te
3−GoTo−3bからなる混合体を用いることを特徴
とするものである。この過剰なsbは、結晶化、非晶質
化の過程において、GoTo成分とSb2Te3成分の
相分離に対する阻止効果を有し、サイクルの向上をもた
らす。同時に、結晶化に対して、結晶化核のはたらきが
期待でき、記録および、消去に対する感度向上をもたら
す。
Therefore, in the present invention, by including excessive Sb, Sb2Te
This method is characterized by using a mixture consisting of 3-GoTo-3b. This excess sb has the effect of inhibiting phase separation of the GoTo component and the Sb2Te3 component during the crystallization and amorphization process, resulting in improved cycle times. At the same time, crystallization nuclei can be expected to play a role in crystallization, resulting in improved recording and erasing sensitivity.

実施例 記録層である薄膜を形成する基板としては、あらかじめ
、レーザ光案内溝を形成した樹脂基板を用い、この表面
にあらかじめ耐熱性のすぐれたZnSあるいはS t 
O2等の無機誘電体層を形成しておく。この誘電体層と
しては、S 102を16モル係以上含ませたZnS誘
電体層が好ましい。
EXAMPLES The substrate on which the thin film serving as the recording layer is formed is a resin substrate on which a laser beam guide groove has been formed in advance, and the surface of this resin substrate is coated with ZnS or St, which has excellent heat resistance.
An inorganic dielectric layer such as O2 is formed in advance. This dielectric layer is preferably a ZnS dielectric layer containing 16 or more moles of S102.

この上に、Sb2Te3.GeTeおよび過剰sbから
なる混合薄膜を形成する。
On top of this, Sb2Te3. A mixed thin film consisting of GeTe and excess sb is formed.

薄膜形成の方法としては、真空蒸着あるいは、スパッタ
法が使用できる。この薄膜の組成としては第1図に示す
Sb2Te3.GeTe 、およびsbからなる3角ダ
イアグラムにおいて、AAs b2Te3(36%)、
GeTe(41%)、Sb(24%)。
As a method for forming a thin film, vacuum evaporation or sputtering can be used. The composition of this thin film is Sb2Te3. In the triangular diagram consisting of GeTe and sb, AAs b2Te3 (36%),
GeTe (41%), Sb (24%).

8点 Sb2Te3 (27% ) 、GoTo (5
1% ) 、 Sb (22% )、CA   Sb2
Te 3(42% )−GoTo (29%)。
8 points Sb2Te3 (27%), GoTo (5
1%), Sb (22%), CA Sb2
Te3 (42%)-GoTo (29%).

Sb (29%)を含む領域1の中を選ぶことが望まし
い。
It is desirable to select a region 1 containing Sb (29%).

これを、Sb2Tθ3に対するそれぞれG e T e
This is converted into G e T e for Sb2Tθ3, respectively.
.

比および、過剰なSbの比で表わすと、0.5<GoT
e/Sb2Te3<2.0  および、1o〈過剰Sb
チ/Sb2Te3く30に選フコとになる。3角ダイア
グラムにおいては、過剰Sbのモルチが約25%のライ
ン2を中心とする組成領域になる。この26多ラインの
組成点群が最も重要である。
When expressed as the ratio and the ratio of excess Sb, 0.5<GoT
e/Sb2Te3<2.0 and 1o<excess Sb
Chi/Sb2Te3 will be selected at 30. In the triangular diagram, the composition region is centered around line 2, where the excess Sb moltenness is about 25%. This 26-line composition point group is the most important.

第2図に、それぞれ膜の感度と組成の関係を示す。この
図では、G e T e /S b 2T e 3中1
.2において、過剰S b/S b 2 T e 3の
値を、10,18.30のものについて示している。過
剰Sbの増加に伴い、レーザパワー6mWの低パワー領
域でのC/N比、曲線3は増大してゆき、感度の向上が
みられる。ただしレーザパワー9mWでは曲線4に示す
ようにいずれの組成点においても、C/N比は、約55
 dBの値になっている。
FIG. 2 shows the relationship between the sensitivity and composition of each film. In this figure, G e T e /S b 2T e 3 out of 1
.. 2, the values of excess S b /S b 2 T e 3 are shown for those of 10,18.30. As excess Sb increases, the C/N ratio in the low power region of 6 mW, curve 3, increases, and sensitivity is improved. However, at a laser power of 9 mW, the C/N ratio is approximately 55 at any composition point as shown in curve 4.
The value is in dB.

G o T e / S b 2 T e 3の比が大
きくなり、GoT。
The ratio of G o T e / S b 2 T e 3 increases and GoT.

リッチになるほど、感度は低下する。さらにサイクル特
性と組成の関係は、サイクルに対するCハの変化量とd
c/Nとし、過剰Sb/Sb2Tθ3の値についてdc
/Hの大きさは、次の順序になる。
The richer it gets, the lower the sensitivity becomes. Furthermore, the relationship between cycle characteristics and composition is the amount of change in C with respect to the cycle and d
c/N, and the value of excess Sb/Sb2Tθ3 is dc
The magnitude of /H is in the following order.

dC/N1゜〈dC/N18≦dCハ。。となり、望ま
しくはSb/Sb2Te3〉20に選ぶことが好ましい
dC/N1゜<dC/N18≦dCc. . Therefore, it is preferable to select Sb/Sb2Te3>20.

第1図の3角ダイアグラムにおいて、Sb2s%ライン
よりも、過剰sbが少いポイントE、Hでは、サイクル
特性の劣化が大きく、さらに、過剰sbが25%ライン
よりもSb側つまり、多い領域の1点ではサイクル特性
の劣化が再び増大する。
In the triangular diagram of Fig. 1, at points E and H where excess sb is less than the Sb2s% line, the deterioration of cycle characteristics is greater. At one point, the deterioration of the cycle characteristics increases again.

又、さらにsbが多い組成点り点では、記録感度。In addition, recording sensitivity decreases at the composition point where there is more sb.

C/N比の低下が発生する。A decrease in C/N ratio occurs.

発・明の効果 レーザ光による記録再生消去する記録部材において、G
 e T e  S b 2 T e 3−過剰sbか
らなる組成の記録薄膜は、次の効果を有する。すなわち
、薄膜中の安定合金の種類が減少するとともに、過剰S
bのはたらきにより、記録、消去のサイクルにおける薄
膜中の組成分離が生じにくくなり、サイクル特性が向上
する。また、過剰Sbの量により、高感度化、サイクル
特性安定化を同時に満足する記録部材を得ることができ
る。
Effects of the invention In a recording member that performs recording, reproducing and erasing using a laser beam, G
A recording thin film having a composition of eTeSb2Te3-excess sb has the following effects. In other words, the types of stable alloys in the thin film decrease and the excess S
The function of b makes it difficult for composition separation to occur in the thin film during recording and erasing cycles, improving cycle characteristics. Furthermore, depending on the amount of excess Sb, a recording member that simultaneously satisfies high sensitivity and stable cycle characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における光学情報記録再生消
去部材に用いる記録薄膜の組成の3角ダイアグラム、第
2図は同部材の記録感度(C/N比)の、過剰Sb/S
b2Te3比依存性を示す特性図である。 1・・・・・・特性が良好な組成領域、2・・・・・・
Sb25%ライン、3・・・・・・レーザノくワー6.
6 mWにおけるC/N比、4・・・・・・レーザパワ
ー9mWにおけるCハ比。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第 
1 図            6Q丁ε第2図
Figure 1 is a triangular diagram of the composition of a recording thin film used in an optical information recording/reproducing/erasing member in one embodiment of the present invention, and Figure 2 is a diagram showing the recording sensitivity (C/N ratio) of the same member, with excess Sb/Sb.
FIG. 3 is a characteristic diagram showing b2Te3 ratio dependence. 1... Composition region with good characteristics, 2...
Sb25% line, 3... Laser nozzle 6.
C/N ratio at 6 mW, 4... C ratio at laser power 9 mW. Name of agent: Patent attorney Toshio Nakao and 1 other person
1 Figure 6Q-cho ε Figure 2

Claims (5)

【特許請求の範囲】[Claims] (1)レーザ光等の照射により、熱的に状態を変化させ
る薄膜をGeTeとSb_2Te_3からなる混合体に
、過剰のSbを含ませて基板上に形成してなる光学情報
記録再生消去部材。
(1) An optical information recording/reproducing/erasing member in which a thin film whose state is thermally changed by irradiation with laser light or the like is formed on a substrate by adding an excess of Sb to a mixture of GeTe and Sb_2Te_3.
(2)過剰のSbの量を、+Sbat%とし、Sb_2
Te_3mol%との比を、10<+Sbat%/Sb
_2Te_3mol%<30に選ぶことを特徴とする特
許請求の範囲第1項記載の光学情報記録再生消去部材。
(2) Let the amount of excess Sb be +Sbat%, Sb_2
The ratio with Te_3mol% is 10<+Sbat%/Sb
The optical information recording/reproducing/erasing member according to claim 1, characterized in that _2Te_3 mol%<30.
(3)GeTeの量を、0.6<GeTemol%/S
b_2Te_3mol%<2.0に選ぶことを特徴とす
る特許請求の範囲第1項記載の光学情報記録再生消去部
材。
(3) The amount of GeTe is 0.6<GeTemol%/S
The optical information recording/reproducing/erasing member according to claim 1, wherein b_2Te_3mol%<2.0.
(4)あらかじめ基板の上に誘電体層を形成し、その上
に、GeTe−Sb_2Te_3−Sbからなる薄膜を
形成し、さらにその上に誘電体層を形成し、さらにその
誘電体層の上に反射層を形成してなることを特徴とする
特許請求の範囲第1項記載の光学情報記録再生消去部材
(4) A dielectric layer is formed on the substrate in advance, a thin film made of GeTe-Sb_2Te_3-Sb is formed on top of the dielectric layer, a dielectric layer is formed on top of that, and then a dielectric layer is formed on top of that. The optical information recording/reproducing/erasing member according to claim 1, characterized in that the optical information recording/reproducing/erasing member is formed with a reflective layer.
(5)Sb_2Te_3−GeTe−過剰Sbからなる
薄膜を、熱伝導率の小なるZnSとSiO_2の混合体
誘電体層で、少くとも1方の面を接することを特徴とす
る特許請求の範囲第1項記載の光学情報記録再生消去部
材。
(5) A thin film made of Sb_2Te_3-GeTe-excess Sb is contacted on at least one surface by a mixed dielectric layer of ZnS and SiO_2 having low thermal conductivity. The optical information recording/reproducing/erasing member described in 2.
JP62061604A 1987-03-17 1987-03-17 Optical information recording / reproduction member Expired - Lifetime JP2629696B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62061604A JP2629696B2 (en) 1987-03-17 1987-03-17 Optical information recording / reproduction member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62061604A JP2629696B2 (en) 1987-03-17 1987-03-17 Optical information recording / reproduction member

Publications (2)

Publication Number Publication Date
JPS63228433A true JPS63228433A (en) 1988-09-22
JP2629696B2 JP2629696B2 (en) 1997-07-09

Family

ID=13175933

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2629696B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06171234A (en) * 1991-03-12 1994-06-21 Hisankabutsu Glass Kenkyu Kaihatsu Kk Optical information recording medium
EP0717404A1 (en) 1994-12-13 1996-06-19 Ricoh Company, Ltd Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium
US6388978B1 (en) 1998-04-16 2002-05-14 Ricoh Company, Ltd. Optical recording method for a rewritable phase-change optical recording medium
US7422838B1 (en) 1999-06-01 2008-09-09 Ricoh Company, Ltd. Phase-change optical recording medium
US7507523B2 (en) 2000-09-28 2009-03-24 Ricoh Company, Ltd Optical information recording medium, method of manufacturing the optical information recording medium, and method of and apparatus for recording/reproducing optical information

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06171234A (en) * 1991-03-12 1994-06-21 Hisankabutsu Glass Kenkyu Kaihatsu Kk Optical information recording medium
EP0717404A1 (en) 1994-12-13 1996-06-19 Ricoh Company, Ltd Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium
US6388978B1 (en) 1998-04-16 2002-05-14 Ricoh Company, Ltd. Optical recording method for a rewritable phase-change optical recording medium
US7422838B1 (en) 1999-06-01 2008-09-09 Ricoh Company, Ltd. Phase-change optical recording medium
US7507523B2 (en) 2000-09-28 2009-03-24 Ricoh Company, Ltd Optical information recording medium, method of manufacturing the optical information recording medium, and method of and apparatus for recording/reproducing optical information

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