JPS6323217A - Magneto-resistance effect type magnetic head - Google Patents

Magneto-resistance effect type magnetic head

Info

Publication number
JPS6323217A
JPS6323217A JP16600586A JP16600586A JPS6323217A JP S6323217 A JPS6323217 A JP S6323217A JP 16600586 A JP16600586 A JP 16600586A JP 16600586 A JP16600586 A JP 16600586A JP S6323217 A JPS6323217 A JP S6323217A
Authority
JP
Japan
Prior art keywords
magnetic
thin film
sensing part
thin films
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16600586A
Other languages
Japanese (ja)
Inventor
Munekatsu Fukuyama
宗克 福山
Shigemi Imakoshi
今越 茂美
Hideo Suyama
英夫 陶山
Noboru Wakabayashi
登 若林
Hiroyuki Toba
弘幸 鳥羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP16600586A priority Critical patent/JPS6323217A/en
Publication of JPS6323217A publication Critical patent/JPS6323217A/en
Pending legal-status Critical Current

Links

Landscapes

  • Magnetic Heads (AREA)

Abstract

PURPOSE:To surely improve the Barkhausen noise by providing a magneto- resistance (MR) magnetic sensing part where a pair of soft magnetic thin films having the MR effect are laminated with a nonmagnetic thin film between them. CONSTITUTION:An MR magnetic sensing part 2 having the MR effect is provided on a substrate 1 to constitute an MR type magnetic head. In the magnetic sensing part 2, the first and second soft magnetic thin films 4 and 5 are laminated with a nonmagnetic thin film 6 between them. At least one of the first and second soft magnetic thin films 4 and 5 consists of a metal like Fe, Co, or Ni having the MR effect or an alloy consisting of two out of these metals. The nonmagnetic thin film 6 interposed between soft magnetic thin films 4 and 5 is formed with an inorganic thin film, nonmagnetic metallic thin film, or the like consisting of SiO2, Al2O3, Ti, Mo, Ag, etc. Front electrodes 7 and rear electrodes 8 for supply of a sense current is are formed in end parts of the side of a face 3 and the opposite side and front and rear end parts of the magnetic sensing part 2 by sticking. In this case, the power supply direction of an arrow (a) to the magnetic sensing part 2 of front electrodes 7 and the power supply direction of an arrow (b) of a bias conductor 10 are equalized.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気抵抗(以下MRという)効果型磁気ヘッ
ドに係わる。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetoresistive (hereinafter referred to as MR) effect type magnetic head.

〔発明の)既要〕[Requirement of the invention]

本発明は、少くとも一方がMR効果を有する対の軟磁性
薄膜が非磁性薄膜を介して積層して成るMR効果を有す
るMR感磁部を有して成り、このMR感磁部にセンス電
流を通ずるための電極、特にMR感磁部の前方端側の電
極と、このMR感磁部に与えるバイアス磁界を発生させ
るだめのバイアス導体とへの通電の向きを一致させるよ
うにして、バルクハウゼンノイズの発生を、より確実に
回避させる。
The present invention has an MR magnetically sensitive part having an MR effect, which is formed by laminating a pair of soft magnetic thin films, at least one of which has an MR effect, with a nonmagnetic thin film interposed therebetween, and a sense current is applied to the MR magnetically sensitive part. The direction of the current flowing through the electrodes, especially the electrodes on the front end side of the MR magnetically sensitive section, and the bias conductor that generates the bias magnetic field to be applied to the MR magnetically sensitive section are made to match. To more reliably avoid noise generation.

〔従来の技術〕[Conventional technology]

従来一般のMR型磁気ヘッドは、その感磁部が単層のM
R効果を有する軟磁性膜によって構成され、このMR磁
性膜に、これに与えられる信号磁界に基く抵抗変化を例
えば電圧変化として検出するためのセンス電流を通ずる
ようにしている。ところがこのような単層構造によるM
R型磁気ヘッドはバルクハウゼンノイズが問題となる。
Conventionally, a general MR type magnetic head has a magnetic sensing part made of a single layer M.
It is composed of a soft magnetic film having an R effect, and a sense current is passed through this MR magnetic film to detect a change in resistance based on a signal magnetic field applied thereto as a change in voltage, for example. However, M due to such a single layer structure
R-type magnetic heads have a problem with Barkhausen noise.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

本発明はMR型磁気ヘッドにおいて、バルクハウゼンノ
イズの問題を確実に解決しようとするものである。
The present invention attempts to reliably solve the problem of Barkhausen noise in an MR type magnetic head.

本出願人は、このようなバルクハウゼンノイズの問題の
改善をはかった磁気抵抗効果型磁気ヘッド、ないしは軟
磁性薄膜の構造を、特願昭60−179135号出願、
特願昭60−234971号出願、特願昭60−247
752号出願等で提案したところであるが、本発明はこ
れらで提案した磁気ヘッドないしは磁性薄膜において、
更にバルクハウゼンノイズの確実な改善をはかる。
The present applicant has proposed a structure of a magnetoresistive magnetic head or a soft magnetic thin film which aims to improve the problem of Barkhausen noise as described in Japanese Patent Application No. 179135/1982.
Patent application No. 1988-234971, patent application No. 1987-247
This invention was proposed in the No. 752 application, etc., and in the magnetic head or magnetic thin film proposed in these,
Furthermore, we will definitely improve Barkhausen noise.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、第1図にその平面図を示し、第2図にその断
面図を示すように、基板(1)上にMR効果を有するM
R感磁部(2)を設けてMR型磁気ヘッドを構成する。
As shown in FIG. 1 as a plan view and as shown in FIG. 2 as a cross-sectional view, the present invention provides an M
An MR type magnetic head is constructed by providing an R magnetic sensing part (2).

(3)は磁気媒体との対接ないしは対向面を示し、磁気
媒体は図示しないが、この面(3)に対接ないしは対向
して第1図において紙面と直交する方向に相対的に移動
するようになされている。
(3) indicates a surface that faces or faces the magnetic medium, and although the magnetic medium is not shown, it moves relative to or in opposition to this surface (3) in a direction perpendicular to the plane of the paper in FIG. It is done like this.

感磁部(2)は、第3図に示すように、対の第1及び第
2の軟磁性薄膜(4)及び(5)が非磁性薄膜(6)を
介して積層されて成る。第1及び第2の軟磁性薄膜(4
)及び(5)の少くとも一方はMR効果を有する軟磁性
薄膜、例えば、Fe、 Co、 Ni或いはこれらのう
ちの2種以上の合金より成る。また、これら軟磁性薄!
jl(41及び(5)の一方は、MR効果のない、或い
は殆んどないセンダスト、 Co系アモルファス合金、
Moパーマロイ等の高透磁率軟磁性薄膜によって構成す
ることができる。軟磁性薄膜(4)及び(5)間に介在
させる非磁性薄膜(6)は、5t(h +  A12(
h + Ti。
As shown in FIG. 3, the magnetically sensitive part (2) is formed by laminating a pair of first and second soft magnetic thin films (4) and (5) with a nonmagnetic thin film (6) in between. First and second soft magnetic thin films (4
) and (5) are made of a soft magnetic thin film having an MR effect, for example, Fe, Co, Ni, or an alloy of two or more of these. Also, these soft magnetic thin!
One of jl (41 and (5)) is Sendust, Co-based amorphous alloy, which has no or almost no MR effect.
It can be constructed from a high magnetic permeability soft magnetic thin film such as Mo permalloy. The non-magnetic thin film (6) interposed between the soft magnetic thin films (4) and (5) has a thickness of 5t(h + A12(
h + Ti.

Mo、 Ag等の無機物薄膜、非磁性金属薄膜等によっ
て構成する。そして、この非磁性薄膜(6)は、両軟磁
性薄膜(4)及び(5)間に、交換相互作用に比し静磁
的相互作用が支配的に作用するような5人〜10000
人、例えば5人〜500人の厚さに選定する。
It is composed of an inorganic thin film such as Mo or Ag, a nonmagnetic metal thin film, etc. The non-magnetic thin film (6) is formed between the soft magnetic thin films (4) and (5) such that magnetostatic interaction is more dominant than exchange interaction.
The thickness is selected to be between 5 and 500 people, for example.

また、この感磁部(2)の両軟磁性薄膜(4)及び(5
)は、その飽和磁束密度、厚さ等の選定によって両画膜
(4)及び(5)の磁束量が一致するようにして磁束が
両画膜(4)及び(5)に関して全体的に閉じるように
選定される。そして、両軟磁性薄膜(4)及び(5)を
MR効果を有する磁性薄膜とするときは、両軟磁性薄膜
(4)及び(5)は同一材料9寸法、形状とすることが
望ましいが、一方をMR効果がないか殆んどない材料に
よって構成するときは、この軟磁性薄膜は、MR効果の
ある他方の軟磁性薄膜に比し、電気抵抗が充分大となる
ように、その構成材料の比抵抗。
Also, both soft magnetic thin films (4) and (5) of this magnetically sensitive part (2)
), the magnetic flux is completely closed for both films (4) and (5) by selecting the saturation magnetic flux density, thickness, etc. so that the magnetic flux amounts of both films (4) and (5) match. are selected as follows. When both soft magnetic thin films (4) and (5) are magnetic thin films having an MR effect, it is desirable that both soft magnetic thin films (4) and (5) be made of the same material and have the same dimensions and shape. When one is made of a material that has no or almost no MR effect, the soft magnetic thin film is made of a material that has a sufficiently large electrical resistance compared to the other soft magnetic thin film that has an MR effect. resistivity of.

厚さ等の選定を行う。Select thickness, etc.

そして、感磁部(2)には、その抵抗変化を検出するた
めのセンス電流isを通ずる。この感磁部(2)におけ
るセンス電流jsの通電方向は、磁気媒体から与えられ
る信号磁界Hsに沿う方向、つまり磁気媒体との対接な
いしは対向面(3)と直交する方向に選定される。これ
がため感磁部(2)には、面(3)側とこれとは反対側
との各端、つまり前後各端部に、センス電流isを供給
するための前方電極(7)と後方電極(8)とを被着形
成する。具体的には、感磁部(2)の前後両端部に重ね
合せられるように前方、後方両電極(7)及び(8)を
被着する。ここに、特に前方電極(7)は、端子導出の
上から、少くとも感磁部(2)に対する被着部から、面
(3)に沿う方向に、つまりis雷電流本来の通電方向
とほぼ直交する方向に延在することが余儀なくされる。
A sense current is is passed through the magnetic sensing part (2) to detect a change in resistance. The direction of conduction of the sense current js in the magnetically sensitive portion (2) is selected to be along the signal magnetic field Hs applied from the magnetic medium, that is, in the direction perpendicular to the facing surface (3) or facing the magnetic medium. Therefore, the magnetic sensing part (2) has a front electrode (7) and a rear electrode for supplying the sense current is at each end on the surface (3) side and the opposite side, that is, at each front and rear end. (8) and are deposited and formed. Specifically, both the front and rear electrodes (7) and (8) are attached so as to overlap both the front and rear ends of the magnetic sensing part (2). Here, in particular, the front electrode (7) is directed from above the terminal lead-out, at least from the part attached to the magnetically sensitive part (2), in the direction along the surface (3), that is, approximately the direction in which the IS lightning current is originally energized. They are forced to extend in orthogonal directions.

したがって、この前方電極(7)の、感磁部(2)との
連結部近傍における通電方向は、第1図に矢印aで示す
ように、感磁部(2)における本来のセンス電流isと
ほぼ直交する方向となる。また、感磁部(2)には、通
常のように、信号磁界が与えられない状態でセンス電流
isの方向に対し所要の角度、例えばほぼ45゜に磁化
が向くように外部から所要のバイアス磁界を与えるもの
であり、これがため、感磁部(2)上または下を横切っ
て通電によって所要のバイアス磁界を発生するバイアス
導体(10)を配置し、その通電方向すを、感磁部(2
)におけるセンス電流isの本来の通電方向、すなわち
信号磁界方向とほぼ直交する方向に選定する。そして、
特に本発明は、この構成において、前述した前方電極(
7)の感磁部(2)への通電方向aと、バイアス導体(
lO)の通電方向すとを同−向きに選定する。
Therefore, the current direction in the vicinity of the connection part of the front electrode (7) with the magnetically sensitive part (2) is different from the original sense current is in the magnetically sensitive part (2), as shown by arrow a in FIG. The directions are almost perpendicular. In addition, the magnetic sensing part (2) is provided with a required bias from the outside so that the magnetization is oriented at a required angle, for example approximately 45 degrees, with respect to the direction of the sense current is when no signal magnetic field is applied, as usual. For this reason, a bias conductor (10) that generates a required bias magnetic field by energization is placed across the top or bottom of the magnetically sensitive part (2), and the direction of the current is set to the magnetically sensitive part (2). 2
), the direction is selected to be substantially perpendicular to the direction of the signal magnetic field. and,
In particular, the present invention provides the above-mentioned front electrode (
7), the current direction a to the magnetic sensing part (2) and the bias conductor (
Select the same direction of current flow for 1O).

〔作用〕[Effect]

上述の本発明構成によれば、バルクハウゼンノイズが効
果的に除去される。これについて説明する。
According to the configuration of the present invention described above, Barkhausen noise is effectively removed. This will be explained.

まず、バルクハウゼンノイズの発生原因について説明す
ると、従来一般のMR型磁気へ・ノドのように、その感
磁部が単層のMR磁性薄膜によって構成されている場合
、このMR磁性薄膜は、磁気異方性エネルギー、形状異
方性等に起因する静磁エネルギー等の和が層全体として
最小となるような状態を保持すべく第8図に示すような
磁区構造をとる。すなわち、この単層磁性薄膜が、長方
形の磁性薄膜(51)であり短辺方向に磁気異方性を有
する場合、その面内において、短辺方向に沿って磁化方
向が交互に逆向きの磁区(52)が生じると共に、これ
ら隣り合う磁区(52)に関して閉ループを形成するよ
うにその両端間に、磁性層の長辺方向に沿って順次逆向
きの磁区(53)が生じている。したがって、このよう
な磁性層に外部磁界が与えられると磁壁(54) 、 
 (55)が移動し、これによりバルクハウゼンノイズ
が発生する。
First, to explain the cause of Barkhausen noise, when the magnetically sensitive part is composed of a single-layer MR magnetic thin film, as in the conventional general MR type magnetic throat, this MR magnetic thin film is magnetically In order to maintain a state in which the sum of magnetostatic energy caused by anisotropy energy, shape anisotropy, etc. is minimized for the entire layer, a magnetic domain structure as shown in FIG. 8 is adopted. That is, when this single-layer magnetic thin film is a rectangular magnetic thin film (51) and has magnetic anisotropy in the short side direction, magnetic domains with opposite magnetization directions alternate along the short side direction within the plane. (52) is generated, and magnetic domains (53) in opposite directions are generated sequentially along the long side direction of the magnetic layer between both ends of the adjacent magnetic domains (52) so as to form a closed loop. Therefore, when an external magnetic field is applied to such a magnetic layer, the domain wall (54),
(55) moves, which causes Barkhausen noise.

これに比し、本発明構成においては、その感磁部(2)
が、非磁性薄膜(6)を介して軟磁性薄膜(4)及び(
5)が積層された構造とされていることによって、外部
磁界が与えられていない状態では、第3図に示すように
、磁性層III!1(4)及び(5)は、矢印M1及び
M2で示すように夫々磁化容易軸方向に互いに反平行の
磁化状態にあり、磁壁が生じていない。尚、このように
磁壁が存在しないことについては磁性流体を用いたビッ
タ−(Bitter)法による磁区観察によって確認し
たところである。そして、このような感磁部(2)に対
し、その磁化困難軸方向に外部磁界Hを強めていくと、
第9図A−Cにその磁化状態を、磁性薄膜(5)に関し
ては実線矢印で、磁性薄膜(4)に関しては破線矢印で
模式的に示すように、第9図Aで示す第3図に示した反
平行の磁化状態から外部磁界Hにより第9図Bに示すよ
うに回転磁化過程により磁化が回転し、更に強い外部磁
界により、第9図Cに示すように、両磁性薄H臭(4)
及び(5)が同方向に磁化される。この場合両磁性薄膜
(4)及び(5)においてその面内で磁化が回転するの
で、磁壁は生ずることがなく、パルクツ1ウゼンノイズ
の発生が回避される。つまり、両磁性薄膜(4)及び(
5)の磁化困難軸方向を磁束の伝搬方向とすることによ
って磁壁移動に起因するバルクハウゼンノイズが回避さ
れる。
In contrast, in the configuration of the present invention, the magnetically sensitive portion (2)
However, the soft magnetic thin film (4) and (
5) has a stacked structure, so that when no external magnetic field is applied, the magnetic layer III! 1(4) and (5) are in a magnetized state antiparallel to each other in the direction of the easy axis of magnetization, as shown by arrows M1 and M2, respectively, and no domain wall is generated. The absence of domain walls was confirmed by magnetic domain observation using the Bitter method using magnetic fluid. Then, when the external magnetic field H is strengthened in the direction of the difficult magnetization axis to such a magnetically sensitive part (2),
The magnetization state is schematically shown in FIGS. 9A to 3 with solid line arrows for the magnetic thin film (5) and broken line arrows for the magnetic thin film (4) in FIGS. 9A to 9C. From the antiparallel magnetization state shown, the external magnetic field H causes the magnetization to rotate through the rotational magnetization process as shown in Figure 9B, and an even stronger external magnetic field causes the bimagnetic thin H odor ( 4)
and (5) are magnetized in the same direction. In this case, since the magnetization of both magnetic thin films (4) and (5) rotates within their planes, no domain wall is generated, and the generation of noise is avoided. In other words, both magnetic thin films (4) and (
Barkhausen noise caused by domain wall movement is avoided by setting the direction of the axis of difficult magnetization in 5) as the propagation direction of the magnetic flux.

更にこのような感磁部(2)を有する磁気ヘッドの動作
を第10図〜第12図を参照して説明する。第10図〜
第12図は、感磁部(2)の両磁性薄膜(4)及び(5
)のみを模式的に示したもので、これら磁性薄膜(4)
及び(5)は第10図中にe、aで示す方向に初期状態
で磁化容易軸を有する。そしてこれら磁性薄膜(4)及
び(5)にセンス電流isを通ずる。この通電によって
非磁性薄膜(図示せず)を挟んで対向する両磁性薄膜(
4)及び(5)には電流isと直交する互いに逆向きの
磁界が発生し、これによって磁性層FA(4)及び(5
)は同図に実線及び破線矢印M1及びM2で示すように
磁化される。一方、この感磁部(2)には電流isに沿
う方向に外部からバイアス磁界H8が与えられると、こ
のバイアス磁界H日によって、磁性薄膜(4)及び(5
)の磁化の向きは、第11図に矢印Meよ及びMB2で
示すように所要の角度だけ回転される。このバイアス磁
界Haによって与えられる磁化の方向は、電流isの方
向に対してほぼ45゜となるように、そのバイアス磁界
Haの大きさが選ばれるものである。尚、このようにバ
イアス磁界HBによってセンス電流i5に対してほぼ4
5゛の磁化を与えることによって高い感度と直線性を得
ることができることについては、通常のMR型磁気ヘッ
ドにおいて行われていると同様である。
Furthermore, the operation of the magnetic head having such a magnetic sensing portion (2) will be explained with reference to FIGS. 10 to 12. Figure 10~
Figure 12 shows the bimagnetic thin films (4) and (5) of the magnetically sensitive part (2).
) are shown schematically, and these magnetic thin films (4)
and (5) have easy magnetization axes in the directions shown by e and a in FIG. 10 in the initial state. A sense current is is then passed through these magnetic thin films (4) and (5). This energization causes bimagnetic thin films (
4) and (5), mutually opposite magnetic fields perpendicular to the current is are generated, which causes the magnetic layers FA (4) and (5) to
) are magnetized as shown by solid line and broken line arrows M1 and M2 in the figure. On the other hand, when a bias magnetic field H8 is externally applied to the magnetically sensitive part (2) in the direction along the current is, the bias magnetic field H causes the magnetic thin films (4) and (5
) is rotated by a required angle as shown by arrows Me and MB2 in FIG. The magnitude of the bias magnetic field Ha is selected so that the direction of magnetization given by the bias magnetic field Ha is approximately 45 degrees with respect to the direction of the current is. Incidentally, as described above, the bias magnetic field HB causes approximately 4% of the sense current i5.
The fact that high sensitivity and linearity can be obtained by providing magnetization of 5° is the same as in ordinary MR type magnetic heads.

そして、この状態で第12図に示すように、信号磁界H
sがセンス電流isに沿う方向、すなわち磁針及びI時
計方向に角度θ1及び−θ1回転する。
In this state, as shown in FIG. 12, the signal magnetic field H
s rotates by angles θ1 and −θ1 in the direction along the sense current is, that is, in the clockwise direction of the magnetic needle.

これによって各磁性ys膜(4)及び(5)が例えば共
にMR磁性薄膜である場合は、それぞれ抵抗変化が生じ
ることになるが、このMR磁性薄膜の抵抗の変化は角度
の変化をθとするとき cos2 θに比例するので、
今、第10図における両磁性薄膜(4)及び(5)の磁
化M81及びMB2が互いに90°ずれているとすると
、θ1及び−01の変化で、両磁性i膜(4)及び(5
)に関して抵抗の変化の増減が一致する。つまり、一方
の磁性N膜(4)の抵抗が増加すれば、他方の磁性薄膜
(5)もその抵抗は増加する方向に変化する。
As a result, if the magnetic ys films (4) and (5) are both MR magnetic thin films, a change in resistance will occur, but the change in resistance of this MR magnetic thin film is caused by a change in angle of θ. Since it is proportional to cos2 θ,
Now, assuming that the magnetizations M81 and MB2 of both magnetic thin films (4) and (5) in FIG.
), the increase or decrease in resistance matches. That is, if the resistance of one magnetic N film (4) increases, the resistance of the other magnetic thin film (5) also changes in the direction of increasing.

そして、これら磁性薄膜(4)及び(5)の抵抗変化、
すなわち感磁部(2)の両端の端子t1及びt2間に抵
抗変化を生じ、この抵抗変化を端子t1及びt2間の電
圧変化として検出することができることになる。
And the resistance change of these magnetic thin films (4) and (5),
That is, a resistance change occurs between the terminals t1 and t2 at both ends of the magnetic sensing part (2), and this resistance change can be detected as a voltage change between the terminals t1 and t2.

上述したように、MR感磁部(2)を、第1及び第2の
軟磁性薄膜(4)及び(5)が非磁性薄膜(6)を介し
て積重された構造とすることによってバルクハウゼンノ
イズの改善がはかられるが、更に本発明においては、前
方電極(7)の、特に感磁部(2)におけるセンス電流
isの本来の通電方向と直交する方向になる感磁部(2
)との連結部近傍の通電方向aを、バイアス導体(10
)への通電方向すと同じ向きに選定したことにより、よ
り確実にバルクハウゼンノイズの改善がはかられる。
As described above, the MR magnetic sensing part (2) has a structure in which the first and second soft magnetic thin films (4) and (5) are stacked with the nonmagnetic thin film (6) interposed therebetween, so that bulk Although the Hausen noise is improved, in the present invention, the magnetic sensing part (2) is arranged in a direction perpendicular to the original direction of conduction of the sense current is in the front electrode (7), especially in the magnetic sensing part (2).
) is connected to the bias conductor (10
), the Barkhausen noise can be improved more reliably by selecting the same direction as the current direction.

このことについて説明すると、MR感磁部(2)に対し
て前方電極(7)、バイアス導体(10)を今、第1図
に示した配置パターンをもって配Iした場合の、感磁部
(2)への通電電流isを20mAとして、このときの
感磁部(2)の各部における磁化Mの分布を計算で求め
ると、第13図に示すようになる。この図において横軸
は、MR感磁部(2)の前方端位置を原点としこれより
後方に向う距離をとったもので縦軸は、その各位置の磁
化を示したもので、各曲線(131)〜(135)は、
夫々バイアス導体(10)への直流バイアス電流1bを
電極(7)の通電方向と同方向の50mA、 40mA
、 30mA、 20mA、 10mAとしたとき、曲
線(136)はIb= OmAのとき曲線(137)〜
(141’)は、電流1bを電極(7)の通電方向と逆
向きの一10mA、 −2On+A、 −30mA、 
−40mA、 −50mAに変化させた場合である。こ
れより明らかなようにMR感磁部(2)には、バイアス
導体(10)からの本来のバイアス磁界以外に、電極(
7)への通電によって生じる磁界による磁化(Ib=O
のときの曲線(1’16))が存在するものであり、感
磁部(2)は、−様なバイアス磁化状態にない。このた
め特にIb< 0としたとき、つまり第1図における矢
印aとbとを逆向きにするときは、感磁部(2)北おい
て磁化状態が大きく変化するのみならず磁化の向きが反
転する部分が生じ、磁壁の発生、したがって、バルクハ
ウゼンノイズが発生して来る。更にこのIb< Oの場
合、感磁部(2)による全体の出力は、正バイアス磁化
部分と負バイアス磁化部分との各部に依存する出力が相
殺してしまって出力レベルが低下する不都合があり、更
に、感磁部(2)において、最適バイアス磁化状態から
はずれた部分が生じることになって出力波形に非対称性
を生じる。
To explain this, if the front electrode (7) and bias conductor (10) are arranged in the arrangement pattern shown in FIG. ) is set to 20 mA, and the distribution of magnetization M in each part of the magnetically sensitive part (2) is calculated as shown in FIG. 13. In this figure, the horizontal axis indicates the distance from the origin to the front end of the MR magnetic sensing part (2), and the vertical axis indicates the magnetization at each position, and each curve ( 131) to (135) are
The DC bias current 1b to the bias conductor (10) is set to 50 mA and 40 mA in the same direction as the current direction of the electrode (7), respectively.
, 30mA, 20mA, and 10mA, the curve (136) is the curve (137) when Ib = OmA.
(141') means that the current 1b is 10 mA in the opposite direction to the current direction of the electrode (7), -2On+A, -30 mA,
This is the case where the current was changed to -40mA and -50mA. As is clear from this, in addition to the original bias magnetic field from the bias conductor (10), the MR magnetic sensing part (2) has an electrode (
7) Magnetization (Ib=O
There is a curve (1'16)) when the magnetic field sensing part (2) is not in a --like bias magnetization state. For this reason, especially when Ib<0, that is, when arrows a and b in Fig. 1 are reversed, not only the magnetization state changes greatly in the north of the magnetically sensitive part (2), but also the direction of magnetization changes. An inverted portion occurs, resulting in the generation of domain walls and, therefore, Barkhausen noise. Furthermore, in the case of Ib<O, the overall output from the magnetic sensing part (2) has the disadvantage that the output depending on each part of the positive bias magnetization part and the negative bias magnetization part cancels out, resulting in a decrease in the output level. Furthermore, in the magnetically sensitive portion (2), a portion deviates from the optimum bias magnetization state occurs, causing asymmetry in the output waveform.

これに比し、上述したように本発明では電極(7)とバ
イアス導体(10)の各通電方向a及びbを同じ向きと
したので、磁化の反転が回避されるものであり、感磁部
を磁性薄膜(4)及び(5)の重ね合せ構造としたこと
と相伴って確実にバルクハウゼンノイズが回避され、特
に、例えば、Ib= 30m−A付近で、感磁部(2)
の広い範囲で均一の磁化状態が得られるので、出力のレ
ベルダウンはもとより出力波形の非対称性の改善もはか
られる。
In contrast, as described above, in the present invention, the electrode (7) and the bias conductor (10) are energized in the same direction, a and b, so that reversal of magnetization is avoided, and the magnetically sensitive part In conjunction with the overlapping structure of the magnetic thin films (4) and (5), Barkhausen noise is reliably avoided, and especially, for example, near Ib = 30 m-A, the magnetically sensitive part (2)
Since a uniform magnetization state can be obtained over a wide range, it is possible not only to lower the output level but also to improve the asymmetry of the output waveform.

すなわち、出力波形についてみるに、その出力波形の正
負両出力レベルの高さを第4図に示すように、h”、h
″″とするとき、h”=h−のとき対称性にすぐれた波
形となるものであるが、今、第13図の結果から信号磁
界を加えたときをシュミレートさせると第5図中曲線(
51)及び(52)になり、第1図の方向aとbとが同
−向きのrb> 。
That is, looking at the output waveform, the heights of both the positive and negative output levels of the output waveform are h'', h'', as shown in Figure 4.
``'', a highly symmetrical waveform is obtained when h=h-, but if we simulate the case when a signal magnetic field is applied based on the results shown in Fig. 13, the curve in Fig. 5 (
51) and (52), and the directions a and b in FIG. 1 are the same.

でh”、h−の両者が良く一致している最適のIb値が
存在する。更に第6図は、その実測値であり、曲線(6
1)及び(62)に示されるように、信号波形の正負各
出力レベルの高さh”、h−で両者が良(一致している
領域の存在がrb>oでみられる。
There is an optimal Ib value where both h'' and h- agree well.Furthermore, Fig. 6 shows the actual measured values, and the curve (6
As shown in 1) and (62), the presence of a region where both positive and negative output levels are good (corresponding) at heights h" and h- of the signal waveform is seen when rb>o.

〔実施例〕〔Example〕

第1図及び第2図を参照して、更に本発明の一例を詳細
に説明する。
An example of the present invention will be further described in detail with reference to FIGS. 1 and 2.

この場合、基1(11上にMR感研部(2)を設ける。In this case, the MR sensing section (2) is provided on the base 1 (11).

基板+11は、例えばNi−Zn系フェライト、阿n−
Zn系フェライト等の磁性基板より成る。基板(1)上
には、この基板(1)が導電性を有する場合は、5t0
2等の絶縁性層(11)を形成し、これの上に通電によ
ってバイアス磁界Haを発生させるに供するバイアス導
体(10)を形成し、これの上に更に絶縁層(11)を
形成してその上にMR感磁部(2)を形成する。このM
R感磁部(2)は、磁気媒体との対接ないしは対向面(
3)に前方端が臨みこの面(3)と直交する方向に延在
して形成され、バイアス導体(10)はMR感磁部(2
)下または図示しないがバイアス導体(10)上を横切
るように形成する。
The substrate +11 is made of, for example, Ni-Zn ferrite, An-
It is made of a magnetic substrate such as Zn-based ferrite. On the substrate (1), if this substrate (1) has conductivity, 5t0
A second insulating layer (11) is formed, a bias conductor (10) for generating a bias magnetic field Ha by energization is formed on this, and an insulating layer (11) is further formed on this. An MR magnetic sensing part (2) is formed thereon. This M
The R magnetic sensing part (2) has a surface that faces or faces the magnetic medium (
The bias conductor (10) is formed so as to extend in a direction perpendicular to this surface (3) with its front end facing the MR magnetic sensing part (2).
) or across the bias conductor (10) (not shown).

感磁部(2)は、第1の軟磁性薄膜(4)、非磁性薄膜
(6)、第2の軟磁性薄膜(5)を順次スパンタリング
或いは蒸着等によって連続的に一作業工程で、すなわち
、各材料のスパッタ源、或いは蒸着源を有するスパッタ
リング装置、或いは蒸着装置によって形成し得る。
The magnetically sensitive part (2) is made by successively forming a first soft magnetic thin film (4), a non-magnetic thin film (6), and a second soft magnetic thin film (5) in one work step by sputtering or vapor deposition. That is, it can be formed using a sputtering device or a vapor deposition device having a sputtering source or a vapor deposition source for each material.

非磁性薄膜(6)は、絶縁性或いは導電性の非磁性材例
えば5i02+ ”等によって構成し、その厚さは、前
述したように両磁性薄膜(4)及び(5)間に、実質的
に交換相互作用が殆ど励(ことがなく、クーロンの法則
に従う相互作用による結合、つまり静磁的結合が生じる
厚さの例えば20人に選定する。
The non-magnetic thin film (6) is made of an insulating or conductive non-magnetic material such as 5i02+'', and its thickness is substantially equal to that between the two magnetic thin films (4) and (5) as described above. For example, a thickness of 20 is selected so that exchange interaction is hardly excited and coupling by interaction according to Coulomb's law, that is, magnetostatic coupling occurs.

両磁性薄膜(4)及び(5)の少くとも一方は、前述し
たようにFe、 Ni+ Coの単体、若しくはこれら
2種以上の合金によって構成し得る。
At least one of the magnetic thin films (4) and (5) may be made of Fe, Ni+Co, or an alloy of two or more of these, as described above.

そして、MR感磁部(2)に与えられる信号磁界に沿っ
てセンス電流isを通ずるための電極(7)及び(8)
を感磁部(2)の両端部に夫々一部が重ねられるように
して電気的に被着する。前方電極(7)の少(とも感磁
部(2)に対する被着部は、磁気媒体との対接ないしは
対向面(3)に沿うようにセンス電流isの本来の通電
方向とほぼ直交するように、云い換えればバイアス導体
(10)の通電方向と同方向に延長し、電極(7)及び
(8)から端子t1及びt2を導出する。
And electrodes (7) and (8) for passing the sense current is along the signal magnetic field given to the MR magnetic sensing part (2).
are electrically adhered to both ends of the magnetically sensitive part (2) so that a portion thereof is overlapped with each other. The part of the front electrode (7) (or the part attached to the magnetically sensitive part (2)) is arranged so that it is almost orthogonal to the original direction of the sense current is along the facing surface (3) or facing the magnetic medium. In other words, the terminals t1 and t2 are extended in the same direction as the current direction of the bias conductor (10), and are led out from the electrodes (7) and (8).

また、バイアス導体(10)は、感磁部(2)へのセン
ス電流isと直交し、電極(7)の感磁部(2)との連
結部近傍の通電と同方向に通電がなされて、センス電流
isに沿う方向のバイアスは界Hsを感磁部(2)に与
えるようにする。tBl及びtB2は、このバイアス導
体(10)の通電端子を示す。
In addition, the bias conductor (10) is energized in the same direction as the current flow in the vicinity of the connecting portion of the electrode (7) with the magnetically sensitive portion (2), orthogonal to the sense current is to the magnetically sensitive portion (2). , the bias in the direction along the sense current is applies the field Hs to the magnetically sensitive part (2). tBl and tB2 indicate current-carrying terminals of this bias conductor (10).

そして、基板(1)上に、感磁部(2)等の磁気へ、ド
構成部を覆うようにガラス等の融着1(13)を介して
機械的保護ないしは磁気シールド用の非磁性または磁性
の上基板(14)を接合する。
Then, on the substrate (1), a non-magnetic or A magnetic upper substrate (14) is bonded.

上述の構成において、各層、例えば絶縁層(11)、バ
イアス導体(10) 、電極(7)及び(8)等は、前
述した感磁部(2)の各磁性薄膜(4)及び(5)、非
磁性薄膜(6)と同様に夫々スパッタリング、蒸着によ
って各層を形成し、フォトリソグラフィー技術によって
所要のパターンに形成し得る。
In the above configuration, each layer, such as the insulating layer (11), the bias conductor (10), the electrodes (7) and (8), etc., is connected to each of the magnetic thin films (4) and (5) of the magnetically sensitive part (2). Similarly to the nonmagnetic thin film (6), each layer is formed by sputtering or vapor deposition, and can be formed into a desired pattern by photolithography.

上述の構成において、その磁気記録媒体との対接ないし
は対向面(3)に、磁気記録媒体が対接ないしは対向し
つつ第1図において紙面と直交する方向に移行すること
によって、この媒体上の記録磁化に応じた信号磁界H3
が、MR感磁部(2)のセンス電流isと同方向に与え
られ、この信号磁界H5の変化に応じた抵抗変化が感磁
部(2)に生じて、この抵抗変化をセンス電流rsによ
って検出することによって磁気記録媒体上の記録の読み
出しか行われることになる。
In the above configuration, by moving the magnetic recording medium in a direction perpendicular to the paper plane in FIG. 1 while facing or facing the surface (3) facing the magnetic recording medium, Signal magnetic field H3 according to recording magnetization
is applied in the same direction as the sense current is of the MR magnetic sensing part (2), and a resistance change occurs in the magnetic sensing part (2) according to the change in this signal magnetic field H5, and this resistance change is caused by the sense current rs. By detecting the information, the recording on the magnetic recording medium can only be read.

尚、MR感磁部(2)の両磁性薄膜(4)及び(5)の
いずれか一方の磁性層11ii (4)又は(5)はM
R効果が殆どない磁性薄膜によって構成することができ
、この場合においても前述したように両値性層(4)及
び(5)の磁束量が一致するように厚さ等の選定が行わ
れると共にMR効果の殆どない方の磁性薄膜に関しては
、MR効果を有する磁性薄膜にセンス電流の主たる部分
が流れるようにこの非MR磁性藩膜についての両端の電
極(7)及び(8)間の抵抗は、MR磁性薄膜のそれよ
り充分大となるように、比抵抗の大きいFeCo51B
系、CoZrNb系の各アモルファス合金あるいはFe
−Al−5i系いわゆるセンダスト合金のような高比抵
抗、高透磁率磁性層によって構成し得る。このMR効果
の小さい高透磁率磁性層に用い得る材料としてはMoパ
ーマロイ等も考えられる。
In addition, the magnetic layer 11ii (4) or (5) of either one of the bimagnetic thin films (4) and (5) of the MR magnetic sensing part (2) is M
It can be composed of a magnetic thin film with almost no R effect, and in this case, as described above, the thickness etc. are selected so that the magnetic flux amounts of the ambiguous layers (4) and (5) match. Regarding the magnetic thin film that has almost no MR effect, the resistance between the electrodes (7) and (8) at both ends of this non-MR magnetic film is set so that the main part of the sense current flows through the magnetic thin film that has the MR effect. , FeCo51B has a large specific resistance so that it is sufficiently larger than that of the MR magnetic thin film.
CoZrNb series, CoZrNb series amorphous alloys or Fe
- It can be constituted by a high specific resistance and high permeability magnetic layer such as an Al-5i based so-called Sendust alloy. Mo permalloy or the like may be considered as a material that can be used for this high permeability magnetic layer with a small MR effect.

勿論、これらの材料は電極(7)及び(8)の材料とし
ても考えられる。
Of course, these materials can also be considered as materials for electrodes (7) and (8).

尚、上述した例では、感磁部(2)下にバイアス導体(
10)を設けて感磁部(2)に外部磁界H日を与えるよ
うにした場合であるが、バイアス導体(10)の配置位
置及びそのパターンは種々の構成を採り得るものであり
、例えば多層構造とすることもできる。
In the above example, the bias conductor (
10) is provided to apply an external magnetic field H to the magnetically sensitive part (2), but the arrangement position and pattern of the bias conductor (10) can take various configurations, for example, a multilayer conductor (10). It can also be a structure.

また、感磁部(2)についても例えば第7図に示すよう
に互いに平行に配列された2本の同様の積層体より成る
感磁部(2)が直列に接続され、例えば各前方端が共通
の電極(7)によって接続され、各後端に夫々電極(8
A)及び(8B)を配置した構成を採る場合に適用する
こともできる。
Regarding the magnetic sensing part (2), for example, as shown in FIG. connected by a common electrode (7), with a respective electrode (8) at each rear end.
It can also be applied when adopting a configuration in which A) and (8B) are arranged.

〔発明の効果〕〔Effect of the invention〕

上述したように本発明によればバルクハウゼンノイズを
確実に回避でき、しかも出力レベルが大で、対称性にす
ぐれた出力を得ることが優れた特性を有するMR型磁気
ヘッドを構成することができる。
As described above, according to the present invention, it is possible to configure an MR type magnetic head that can reliably avoid Barkhausen noise, has a high output level, and has excellent characteristics of obtaining output with excellent symmetry. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による磁気抵抗効果型磁気ヘッドの一例
の路線的拡大平面図、第2図はその断面図、第3図はそ
の感磁部の説明図、第4図は出力波形の説明図、第5図
及び第6図は夫々出力波形の対称性の計算結果及び実測
結果を示す図、第7図は感磁部の他の例を示す平面図、
第8図は単層磁性薄膜の磁区構造を示す図、第9図A−
Cは感磁部の外部磁界による磁化状態の説明図、第10
図〜第12図は磁気ヘッドの動作説明図、第13図は感
磁部の磁化分布曲線図である。 (1)は基板、(2)は感磁部、(4)及び(5)はそ
の第1及び第2の軟磁性薄膜、(6)は非磁性薄膜、(
7)及び(8)は電極、(10)はバイアス導体である
FIG. 1 is an enlarged plan view of an example of the magnetoresistive magnetic head according to the present invention, FIG. 2 is a cross-sectional view thereof, FIG. 3 is an explanatory diagram of the magnetic sensing part, and FIG. 4 is an explanation of the output waveform. Figures 5 and 6 are diagrams showing the calculation results and actual measurement results of the symmetry of the output waveform, respectively, and Figure 7 is a plan view showing another example of the magnetically sensitive part.
Figure 8 is a diagram showing the magnetic domain structure of a single-layer magnetic thin film, Figure 9A-
C is an explanatory diagram of the magnetization state of the magnetic sensing part due to the external magnetic field, No. 10
12 to 12 are explanatory diagrams of the operation of the magnetic head, and FIG. 13 is a magnetization distribution curve diagram of the magnetically sensitive portion. (1) is the substrate, (2) is the magnetically sensitive part, (4) and (5) are the first and second soft magnetic thin films, (6) is the nonmagnetic thin film, (
7) and (8) are electrodes, and (10) is a bias conductor.

Claims (1)

【特許請求の範囲】 少くとも一方が磁気抵抗効果を有する対の軟磁性薄膜が
、非磁性薄膜を介して積層された磁気抵抗効果感磁部と
、 該磁気抵抗効果感磁部にセンス電流を通ずるための電極
と、 上記磁気抵抗感磁部にバイアス磁界を印加するバイアス
導体とを有し、 上記磁気抵抗感磁部の前方端部に被着される前号電極は
磁気抵抗感磁部におけるセンス電流方向とほぼ直交する
方向に通電方向が選定され、上記前方電極の通電方向と
上記バイアス導体への通電方向とは同じ向きに選定され
て成ることを特徴とする磁気抵抗効果型磁気ヘッド。
[Claims] A magnetoresistive magnetic sensing part in which a pair of soft magnetic thin films, at least one of which has a magnetoresistive effect, are laminated with a nonmagnetic thin film interposed therebetween, and a sense current is supplied to the magnetoresistive magnetic sensing part. The electrode has a bias conductor for applying a bias magnetic field to the magnetoresistive sensing section, and the electrode attached to the front end of the magnetoresistive sensing section has a bias conductor for applying a bias magnetic field to the magnetoresistive sensing section. A magnetoresistive magnetic head characterized in that a direction of current conduction is selected to be substantially orthogonal to a sense current direction, and a direction of current conduction of the front electrode and a direction of current conduction of the bias conductor are selected to be the same direction.
JP16600586A 1986-07-15 1986-07-15 Magneto-resistance effect type magnetic head Pending JPS6323217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16600586A JPS6323217A (en) 1986-07-15 1986-07-15 Magneto-resistance effect type magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16600586A JPS6323217A (en) 1986-07-15 1986-07-15 Magneto-resistance effect type magnetic head

Publications (1)

Publication Number Publication Date
JPS6323217A true JPS6323217A (en) 1988-01-30

Family

ID=15823117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16600586A Pending JPS6323217A (en) 1986-07-15 1986-07-15 Magneto-resistance effect type magnetic head

Country Status (1)

Country Link
JP (1) JPS6323217A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528439A (en) * 1991-07-17 1993-02-05 Nec Corp Magneto-resistance effect element and production thereof
US5859753A (en) * 1996-04-04 1999-01-12 Fujitsu Limited Spin valve magnetoresistive head with spun valves connected in series

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528439A (en) * 1991-07-17 1993-02-05 Nec Corp Magneto-resistance effect element and production thereof
US5859753A (en) * 1996-04-04 1999-01-12 Fujitsu Limited Spin valve magnetoresistive head with spun valves connected in series

Similar Documents

Publication Publication Date Title
JP6414250B2 (en) Underlying laminated body, laminated element including the same, magnetic sensor, and microwave assisted magnetic head
JP4433820B2 (en) Magnetic detection element, method of forming the same, magnetic sensor, and ammeter
JPH07105006B2 (en) Magnetoresistive magnetic head
JPH11102508A (en) Thin film magnetic converter
JPH10283615A (en) Magneto-resistive type converter
CN1062425A (en) Magnetoresistive Sensor Based on Spin Valve Effect
JP2009026400A (en) Differential magnetoresistive head
JPH07320229A (en) Spin-valve dual magnetoresistance reproducing head
JPH09185809A (en) Magnetic head
JP2001250208A (en) Magnetoresistive element
JPH03116510A (en) Soft magnetic bias type magnetoresistance sensor
JP3050218B1 (en) Magnetic head, magnetic recording / reproducing device and magnetic memory device using the same
JPH11120526A (en) Magnetoresistive effect head
JPH0969211A (en) Magnetoresistive film, magnetic head, and magnetic recording / reproducing device
JP2000284028A (en) Thin-film magnetic MI element
JPS6323217A (en) Magneto-resistance effect type magnetic head
JPH0845030A (en) Magneto-resistive magnetic head
JP2003229612A (en) Magnetoresistive sensor and magnetic disk drive
JP2668925B2 (en) Magnetoresistive magnetic head
JP2508475B2 (en) Magnetoresistive magnetic head
JPH11110720A (en) Magnetoresistive head
JPS63181108A (en) Magneto-resistance effect type magnetic head
JPS6355714A (en) Magneto-resistance effect type magnetic head
JP2596010B2 (en) Magnetoresistive magnetic head
JPH09305924A (en) Magneto-resistance effect type magneto-sensitive element and magnetic head using the same