JPS6329377B2 - - Google Patents
Info
- Publication number
- JPS6329377B2 JPS6329377B2 JP15907579A JP15907579A JPS6329377B2 JP S6329377 B2 JPS6329377 B2 JP S6329377B2 JP 15907579 A JP15907579 A JP 15907579A JP 15907579 A JP15907579 A JP 15907579A JP S6329377 B2 JPS6329377 B2 JP S6329377B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- grid
- diameter
- hole
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 52
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 201000009310 astigmatism Diseases 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/50—Electron guns two or more guns in a single vacuum space, e.g. for plural-ray tube
- H01J29/503—Three or more guns, the axes of which lay in a common plane
Description
【発明の詳細な説明】
本発明は電子銃に係り、特にシヤドウマスク形
カラー受像管に装着し、1列配列された3本の電
子ビームを射出する電子銃の主電子レンズ部を構
成する相対設する電極の構造に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron gun, and more particularly to an electron gun that is attached to a shadow mask type color picture tube and that constitutes a main electron lens section of an electron gun that emits three electron beams arranged in a row. This relates to the structure of the electrode.
シヤドウマスク形カラー受像管はネツク内に装
着した電子銃より射出される3本の電子ビームを
シヤドウマスクを介して蛍光体スクリーン上に集
束し、カラー画像を蛍光体スクリーン上に再現さ
せるようになつている。 A shadow mask type color picture tube focuses three electron beams emitted from an electron gun mounted inside the net onto a phosphor screen via a shadow mask, and reproduces a color image on the phosphor screen. .
前述した電子銃としてはバイポテンシヤル型、
ユニポテンシヤル型、トライポテンシヤル型など
が開発されいずれの形の電子銃も主電子レンズを
有しており、陰極から放出された熱電子を電子ビ
ームとし、主電子レンズにより蛍光体スクリーン
上に集束させるようになつている。この主電子レ
ンズは静電レンズであり、光学レンズと同様にレ
ンズの直径により、その主性能が決定されること
になる。 The above-mentioned electron gun is a bipotential type,
Unipotential type, tripotential type, etc. have been developed, and each type of electron gun has a main electron lens, and the thermionic electrons emitted from the cathode are turned into an electron beam, which is focused onto a phosphor screen by the main electron lens. It's becoming like that. This main electron lens is an electrostatic lens, and like an optical lens, its main performance is determined by the diameter of the lens.
一般に電子銃の主電子レンズの直径はシヤドウ
マスク形カラー受像管のネツク内径と電子銃の構
造により最大径が規定されており、1列配列され
た電子ビームをそれぞれ独立した電極により形成
させる電子銃に於てはネツク内径の約30%位が限
度であり、更に1列配列1体構造の電子銃におい
てはネツク内径の約28%位が限度とされている。 Generally, the maximum diameter of the main electron lens of an electron gun is determined by the inner diameter of the net of the shadow mask type color picture tube and the structure of the electron gun. In this case, the limit is about 30% of the inner diameter of the neck, and furthermore, in the case of an electron gun arranged in a single row and having a one-piece structure, the limit is about 28% of the inner diameter of the neck.
即ち、ネツク内径に対する主電子レンズの最大
直径は前述のように小さい上、最近カラー受像管
は偏向電力を減少させる手段の1つとしてネツク
径を細くするように要望されており、これにとも
ない主電子レンズの最大径も小さくなる。従つて
電子レンズの収差が大きくなり、これによる電子
ビームの拡がり成分が増大し、蛍光体スクリーン
上における電子ビームの集束を悪くする要因の1
つとなつている。 That is, the maximum diameter of the main electron lens relative to the inner diameter of the net is small as described above, and recently there has been a demand for color picture tubes to have a smaller neck diameter as a means of reducing the deflection power. The maximum diameter of the electronic lens also becomes smaller. Therefore, the aberration of the electron lens increases, which increases the spread component of the electron beam, which is one of the factors that worsens the focusing of the electron beam on the phosphor screen.
It's becoming one.
次にカラー受像管装置の一例を第1図及び第2
図に示す。即ち赤,緑,青各色に発光するドツト
状または帯状の蛍光体層からなる蛍光面1が被着
形成されたフエースプレート2と、このフエース
プレート2の側壁部3にフアンネル4を介して連
接されたネツク5と、このネツク5に内装された
3本の電子ビームを発生する電子銃6と、この電
子銃6に所定の電圧を印加するステムピン7と、
前記電子銃6に対設するネツク5外壁に配設され
たピユリテイ及び静コンバーゼンス調整用磁石8
と、前記フアンネル4からネツク5にかけての外
壁に装着された偏向装置91と、蛍光面1に所定
間隔をもつて対設されたシヤドウマスク10から
形成されている。 Next, an example of a color picture tube device is shown in Figures 1 and 2.
As shown in the figure. That is, a face plate 2 has a phosphor screen 1 formed of dot-shaped or band-shaped phosphor layers that emit light in red, green, and blue colors, and is connected to a side wall 3 of this face plate 2 via a funnel 4. an electron gun 6 that generates three electron beams and is housed in the network 5; a stem pin 7 that applies a predetermined voltage to the electron gun 6;
A magnet 8 for adjusting the power and static convergence is arranged on the outer wall of the net 5 opposite to the electron gun 6.
, a deflection device 91 attached to the outer wall from the funnel 4 to the neck 5, and a shadow mask 10 disposed opposite to the phosphor screen 1 at a predetermined distance.
前記電子銃6は複数個の電極と、これを支持す
る複数個のガラス支持棒とからなり、前記複数個
の電極は3個の陰極6K1,6K2,6K3、第1グリ
ツド61、第2グリツド62、第3グリツド63、
第4グリツド64の順にガラス支持棒に植設固定
されている。 The electron gun 6 consists of a plurality of electrodes and a plurality of glass support rods that support the electrodes, and the plurality of electrodes include three cathodes 6 K1 , 6 K2 , 6 K3 , a first grid 6 1 , 2nd grid 6 2 , 3rd grid 6 3 ,
A fourth grid 64 is implanted and fixed to the glass support rod in this order.
そして3個の陰極6K1,6K2,6K3は同じ平面
上に3本の電子ビーム14,15,16を射出す
る。 The three cathodes 6 K1 , 6 K2 , and 6 K3 emit three electron beams 14 , 15 , and 16 onto the same plane.
第1グリツド61と第2グリツド62は近接配置
された平板状電極であり、それぞれに各電子ビー
ムの径路と整合した3個の通孔部を有している。 The first grid 6 1 and the second grid 6 2 are planar electrodes arranged close to each other, each having three through holes aligned with the paths of the respective electron beams.
第3グリツド63は第2グリツド62に近接配置
され、接合された2個のカツプ631,632からな
り、このカツプの閉塞端にはそれぞれ各電子ビー
ムの径路に整合した3個の通孔部が設けられてお
り、第1のカツプ631の開孔部はこれに対応する
第2グリツド62の通孔部に等しいか、やや大で
あり、第2のカツプ632の通孔部は第1のカツプ
631の通孔部より更に大きくなつている。 The third grid 6 3 is arranged close to the second grid 6 2 and consists of two joined cups 6 31 and 6 32 , and the closed end of this cup has three cups aligned with the path of each electron beam. The opening of the first cup 6 31 is equal to or slightly larger than the corresponding opening of the second grid 6 2 , and the opening of the first cup 6 31 is equal to or slightly larger than the corresponding opening of the second grid 6 2 . The hole is larger than the through hole of the first cup 631 .
第4グリツド64はその閉塞端に3つの通孔部
を有する1個のカツプから形成されているが、そ
の通孔部のうち中央の通孔部は第1グリツド61
から第3グリツド63までの通孔部と整合してお
り、他の2つの通孔部は夫々中央の通孔部から外
方に離れるように僅かに偏心している。この偏心
は3本の電子ビームをシヤドウマスクの電子ビー
ム通孔部に集束させるために中央の電子ビーム1
5を除く両側の電子ビーム14,16に僅かに非
対称電界による偏向を与えるようにするためであ
る。 The fourth grid 64 is formed from one cup having three through holes at its closed end, and the central through hole among the through holes is connected to the first grid 61.
to the third grid 63 , and the other two holes are each slightly offset outwardly from the central hole. This eccentricity is necessary to focus the three electron beams on the electron beam hole in the shadow mask.
This is so that the electron beams 14 and 16 on both sides except for the electron beams 5 are deflected by a slightly asymmetric electric field.
この第4グリツド64には更に各電子ビーム径
路に整合した3個の通孔部とその底部に穿設した
有底筒状のシールドカツプ65が取着されている。
このシールドカツプ65の側壁部には外方向に突
出した3個のバルブスペーサ17が取付けられて
いる。 This fourth grid 64 is further fitted with three through holes aligned with each electron beam path and a cylindrical shield cup 65 with a bottom bored at the bottom thereof.
Three valve spacers 17 projecting outward are attached to the side wall of this shield cup 65 .
前述した電子銃6はネツク5の内部に装着され
ており、第4グリツド64には陽極端子からの高
電圧が内部導電膜、バルブスペーサ17、コンバ
ーゼンスカツプ65を介して印加され、他の電極
にはステムピン18を介して管外より所定電圧が
管外より印加され、第3グリツド63と第4グリ
ツド64間に主電子レンズが形成されるようにな
つている。 The aforementioned electron gun 6 is installed inside the network 5, and a high voltage from the anode terminal is applied to the fourth grid 64 via the internal conductive film, the valve spacer 17, and the convergence cup 65 , and the other A predetermined voltage is applied to the electrode from outside the tube via the stem pin 18, so that a main electron lens is formed between the third grid 63 and the fourth grid 64 .
第3図は第3グリツド63の主電子レンズ側の
通孔部を第4グリツド64側から見た図であり、
平面部21に穿設された各電子ビーム通孔部2
2,23,24は真円形状、あるいは真円形に近
い形状をなし、この電子ビーム通孔部22,2
3,24の直径25は一義的にはネツク5の内径
によつて規定されるものであり、さらに電極の製
作上の理由から各電子ビーム通孔部22,23,
24の中心間距離26によつて規定される。 FIG. 3 is a view of the through hole on the main electron lens side of the third grid 63 , viewed from the fourth grid 64 side.
Each electron beam hole 2 bored in the plane part 21
2, 23, and 24 have a perfect circular shape or a shape close to a perfect circle, and these electron beam apertures 22, 2
The diameter 25 of each electron beam hole 22, 24 is primarily defined by the inner diameter of the neck 5, and furthermore, for reasons of electrode manufacturing, the diameter 25 of each electron beam hole 22, 23,
24 and a center-to-center distance 26 .
例えばネツク外径29.1mmのカラー受像管に於て
は、前述した規定のため、ネツク内に挿入される
電子銃の各電子ビーム通孔部22,23,24の
孔径はこの電子ビーム通孔部の中心間距離を6.6
mmとしたとき、最大5.5mmが限度とされている。
これは主として電子ビーム通孔部間のブリツジ2
7を形成する時の機械加工の要求によるものであ
る。このため電子レンズ径を充分大きくすること
ができず、電子レンズの球面収差を減少させるこ
とが困難であつた。 For example, in a color picture tube with a net outer diameter of 29.1 mm, due to the above-mentioned regulations, the diameter of each electron beam aperture 22, 23, 24 of the electron gun inserted into the net is the same as that of the electron beam aperture. Center distance of 6.6
When expressed as mm, the maximum limit is 5.5 mm.
This is mainly caused by the bridge 2 between the electron beam apertures.
This is due to the machining requirements when forming 7. For this reason, the diameter of the electron lens cannot be made sufficiently large, and it has been difficult to reduce the spherical aberration of the electron lens.
本発明は前記従来の問題点に鑑みなされたもの
であり、電子レンズ径を大きくするために、電子
ビーム通孔部の孔径を同一平面方向の孔径より、
これに直角な方向の孔径を大にし、かつこのよう
な形状にすることにより、電子レンズ径は増大す
るが、非点収差をもつ電子ビームとなるのを電子
レンズの低電位電極とこれに相対設する高電位電
極の前述した電子ビーム通孔部の孔径比を変化す
ることにより補正し得る電子銃を提供することを
目的としている。 The present invention has been made in view of the above-mentioned conventional problems, and in order to increase the diameter of the electron lens, the diameter of the hole in the electron beam hole is made larger than the diameter of the hole in the same plane direction.
By increasing the aperture diameter in the direction perpendicular to this and making the shape like this, the diameter of the electron lens increases, but the electron beam with astigmatism is created by making the electron beam's low potential electrode and relative to it. It is an object of the present invention to provide an electron gun that can be corrected by changing the aperture ratio of the above-mentioned electron beam aperture of a high potential electrode provided therein.
即ち本発明は低電位電極と高電位電極の2つの
電極によつて形成される電子レンズでは低電位部
において、強い集束作用、高電位部において弱い
発散作用が働くため、低電位部で発生した非点収
差を高電位部で補正するようにしている。 In other words, in the present invention, in an electron lens formed by two electrodes, a low potential electrode and a high potential electrode, a strong focusing effect works in the low potential part and a weak divergent action works in the high potential part. Astigmatism is corrected in the high potential section.
次に本発明の電子銃の一実施例を説明するが、
主電子レンズを形成する相対設する電極以外は従
来の電子銃とほぼ同様なので図及び説明を省略す
る。 Next, an embodiment of the electron gun of the present invention will be described.
The components other than the opposing electrodes forming the main electron lens are substantially the same as those of a conventional electron gun, so illustrations and explanations will be omitted.
次に本発明の電子銃の一実施例に適応する低電
位側電極即ち第3グリツト40を第4図、高電位
側即ち第4グリツド50を第5図によつて説明す
る。 Next, the low potential side electrode, ie, the third grid 40, adapted to one embodiment of the electron gun of the present invention will be explained with reference to FIG. 4, and the high potential side, ie, the fourth grid 50, will be explained with reference to FIG.
先ず第4図に於て第3グリツド40は平面部4
1に穿設された各電子ビーム通孔部42,43,
44の孔径はこれら電子ビーム通孔部の中心を結
ぶ水平軸、即ち、3本の電子ビームの配列される
平面と平面部41の交線をX1−X′1軸、このX1−
X′1軸に垂直で中央の電子ビーム通孔部43を通
る垂直軸をY1−Y′1軸としたとき、Y1−Y′1軸方
向の孔径b1は各電子ビーム通孔部42,43,4
4の中心間距離s1より大であり、またs1と各電子
ビーム通孔部42,43,44のX1−X′1軸方向
の孔径a1とは略等しく、またb1/a1=1.06以上に
なるように形成されたトラツクフイールド形状を
なしている。この場合各電子ビーム通孔部42,
43,44の重複する部分には他の部材などから
なる遮蔽板45,46が設けられており、電子ビ
ーム通孔部42,44のX1−X′1軸上の端面は遮
蔽板45,46の長さだけ電子ビーム通孔部4
2,44から除去されている。 First, in FIG. 4, the third grid 40 is the plane part 4.
Each electron beam hole 42, 43,
The diameter of the hole 44 is defined by the horizontal axis connecting the centers of these electron beam holes, that is, the intersection line of the plane where the three electron beams are arranged and the plane part 41, the X 1 -X' 1 axis, and this X 1 -
When the vertical axis that is perpendicular to the X′ 1 axis and passes through the central electron beam hole 43 is the Y 1 −Y′ 1 axis, the hole diameter b 1 in the Y 1 −Y′ 1 axis direction is the diameter of each electron beam hole. 42,43,4
4, and s 1 and the hole diameter a 1 in the X 1 -X' 1 axis direction of each electron beam hole 42, 43, 44 are approximately equal, and b 1 / a It has a track field shape formed so that 1 = 1.06 or more. In this case, each electron beam aperture 42,
Shielding plates 45 and 46 made of other members are provided in the overlapping portions of 43 and 44, and the shielding plates 45 and 46 are provided on the end surfaces of the electron beam passage portions 42 and 44 on the X 1 -X′ 1 axis. The electron beam passage portion 4 has a length of 46.
It has been removed from 2.44.
次に高電位側、即ち、第5図に示す第4グリツ
ド50は平面部51に穿設された各電子ビーム通
孔部52,53,54はこれら電子ビーム通孔部
の中心を結ぶ水平軸、即ち3本の電子ビームの配
列される平面と平面部51の交線をX2−X′2軸、
このX2−X′2軸に垂直で中央の電子ビーム通孔部
53を通る垂直軸をY2−Y′2軸としたときY2−
Y′2軸方向の孔径b2は各電子ビーム通孔部52,
53,54の中心間距離s2より大であり、またs2
と各電子ビーム通孔部52,53,54のX2−
X′2軸方向の孔径a2とは、ほぼ等しく、b2/a2は
第4図に示すような低電位側の第3グリツドの非
円形な電子ビーム通孔部によつて生じる非点収差
を消去させるためにb1/a1よりも2%以上大きく
なるように形成されたトラツクフイールド形状を
なしている。これは低電位部と高電位部の2つの
電極によつて形成される電子ビームでは低電位部
で強い集束作用、高電位部で弱い発散作用が働く
ため、低電位部で発生した非点収差は高電位部で
補正することができるためである。 Next, on the high potential side, that is, the fourth grid 50 shown in FIG. , that is, the intersection line of the plane on which the three electron beams are arranged and the plane part 51 is defined as the X 2 -X′ 2 axis,
When the vertical axis that is perpendicular to this X 2 −X′ 2 axis and passes through the central electron beam hole 53 is the Y 2 −Y′ 2 axis, Y 2 −
The hole diameter b 2 in the Y′ 2- axis direction is for each electron beam passage portion 52,
The distance between the centers of 53 and 54 is greater than s 2 , and s 2
and X 2 − of each electron beam aperture 52, 53, 54
The aperture diameter a 2 in the X' 2- axis direction is approximately equal, and b 2 /a 2 is the astigmatism caused by the non-circular electron beam passage part of the third grid on the low potential side as shown in Fig. 4. In order to eliminate aberrations, the track field is formed to be larger than b 1 /a 1 by 2% or more. In the electron beam formed by two electrodes, a low potential part and a high potential part, there is a strong focusing effect in the low potential part and a weak diverging effect in the high potential part, so the astigmatism generated in the low potential part This is because it can be corrected in the high potential section.
また各電子ビーム通孔部52,53,54の重
複する部分には他の部材などからなる遮蔽板5
5,56が設けられており、電子ビーム通孔部5
2,54のX2軸の端面は遮蔽板55,56の長
さだけ電子ビーム通孔部52,54から除去され
ているのは第4図の場合と同様である。 In addition, a shielding plate 5 made of other material is provided at the overlapping portion of each electron beam aperture 52, 53, 54.
5 and 56 are provided, and the electron beam through hole 5
As in the case of FIG. 4, the X 2 -axis end faces of Nos. 2 and 54 are removed from the electron beam apertures 52 and 54 by the length of the shielding plates 55 and 56.
前述のような第3グリツド40、第4グリツド
50により主電子レンズを形成することにより主
電子レンズ口径は大きくなり、非点収差、及び球
面収差の少ない電子ビームを射出する電子銃構体
を得ることが出来る。 By forming the main electron lens with the third grid 40 and the fourth grid 50 as described above, the main electron lens aperture becomes large, and an electron gun structure is obtained that emits an electron beam with little astigmatism and spherical aberration. I can do it.
次に具体例について述べると第1グリツド、第
2グリツドの電子ビーム通孔部の孔径をそれぞれ
0.67mm、第3グリツドの第1のカツプの電子ビー
ム通孔部の孔径を1.7mm、第3グリツドの第2の
カツプ、即ち、第5図のものの孔径a1を6.57mm、
孔径b1を6.96mm、第4グリツド即ち第6図のもの
の孔径a2を6.77mm、孔径b2を7.31mm、第3グリツ
ドの長さを14.3mm、第3グリツドと第4グリツド
との間隔を1.0mmとし、例えば第4グリツドに
25KV、第3グリツドに5KV、他の電極に所定の
電圧を印加した時良好な結果が得られた。 Next, to describe a specific example, the hole diameters of the electron beam holes of the first grid and the second grid are
0.67 mm, the hole diameter of the electron beam passage part of the first cup of the third grid is 1.7 mm, and the hole diameter a 1 of the second cup of the third grid, that is, the one in FIG. 5, is 6.57 mm.
The hole diameter b 1 is 6.96 mm, the hole diameter a 2 of the fourth grid, that is, the one in Fig. 6, is 6.77 mm, the hole diameter b 2 is 7.31 mm, the length of the third grid is 14.3 mm, and the distance between the third grid and the fourth grid. 1.0mm, for example, on the 4th grid.
Good results were obtained when 25KV was applied to the third grid, 5KV was applied to the third grid, and other predetermined voltages were applied to the other electrodes.
前述した実施例はバイポテンシヤル形電子銃構
体について述べたが、トライポテンシヤル形、ク
オドラポテンシヤル形などの電子銃構体に適用出
来るし、各電子ビーム通孔部の縁部に第2図に示
すような筒状体を設けても良いことは勿論であ
る。 Although the above-mentioned embodiment has been described with respect to a bipotential type electron gun structure, it can also be applied to a tripotential type, quadrapotential type, etc. electron gun structure. Of course, a cylindrical body may also be provided.
第1図はカラー受像管の代表例を示す説明用断
面図、第2図は第1図の電子銃構体近傍の拡大断
面図、第3図は第2図の第3グリツドを第4グリ
ツド側から見た平面図、第4図及び第5図は本発
明の電子銃構体の一実施例に適応する電極を示す
図であり、第4図は第3グリツドの平面図、第5
図は第4グリツドの平面図である。
63,50……第3グリツド、64,60……第
4グリツド、22,23,24,42,43,4
4,52,53,54……電子ビーム通孔部。
Fig. 1 is an explanatory sectional view showing a typical example of a color picture tube, Fig. 2 is an enlarged sectional view of the vicinity of the electron gun structure in Fig. 1, and Fig. 3 shows the third grid in Fig. 2 facing the fourth grid. 4 and 5 are diagrams showing electrodes adapted to an embodiment of the electron gun assembly of the present invention, and FIG. 4 is a plan view of the third grid, and FIG.
The figure is a plan view of the fourth grid. 6 3 , 50 ... 3rd grid, 6 4 , 60 ... 4th grid, 22, 23, 24, 42, 43, 4
4, 52, 53, 54...Electron beam hole.
Claims (1)
電子ビームを射出し前記電子ビームを集束する主
電子レンズを形成する1対の電極がそれぞれ所定
の孔径を有する3個の電子ビーム通孔部の穿設さ
れた1体構造により構成された電子銃に於て、前
記主電子レンズを形成する1対の電極のうち低電
位側の電極の前記平面と同一方向の孔径をa1、隣
接する電子ビーム通孔部の中心間距離をs1、前記
平面と垂直方向の孔径をb1とし、前記主電子レン
ズを形成する1対の電極のうち高電位側の電極の
前記平面と同一方向孔径をa2、隣接する電子ビー
ム通孔部の中心間距離をs2、前記平面と垂直方向
の孔径をb2とした時 b1/a1>1.06 s1≒a1 b2/a2>b1/a1+0.02 s2≒a2 を満足するようにしたことを特徴とする電子
銃。[Scope of Claims] 1. Three electrodes arranged on the same plane and forming a main electron lens that emits three electron beams at the center and on both sides and focuses the electron beams, each of which has a predetermined hole diameter. In an electron gun constituted by a one-piece structure having an electron beam passage section, the diameter of the hole in the same direction as the plane of the electrode on the low potential side of the pair of electrodes forming the main electron lens. is a 1 , the distance between the centers of adjacent electron beam holes is s 1 , the hole diameter in the direction perpendicular to the plane is b 1 , and the electrode on the high potential side of the pair of electrodes forming the main electron lens is When the diameter of the hole in the same direction as the plane is a 2 , the distance between the centers of adjacent electron beam holes is s 2 , and the diameter of the hole in the direction perpendicular to the plane is b 2 , b 1 /a 1 >1.06 s 1 ≒a 1 An electron gun characterized in that b 2 /a 2 >b 1 /a 1 +0.02 s 2 ≒a 2 is satisfied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15907579A JPS5682549A (en) | 1979-12-10 | 1979-12-10 | Electron gun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15907579A JPS5682549A (en) | 1979-12-10 | 1979-12-10 | Electron gun |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5682549A JPS5682549A (en) | 1981-07-06 |
| JPS6329377B2 true JPS6329377B2 (en) | 1988-06-13 |
Family
ID=15685664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15907579A Granted JPS5682549A (en) | 1979-12-10 | 1979-12-10 | Electron gun |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5682549A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58103752A (en) * | 1981-12-16 | 1983-06-20 | Hitachi Ltd | Electron gun for color picture tube |
| JPS59103250A (en) * | 1982-12-06 | 1984-06-14 | Hitachi Ltd | Electron gun for color picture tube |
| JPS59112540A (en) * | 1982-12-17 | 1984-06-29 | Hitachi Ltd | Electron gun for color picture tube |
| US4542318A (en) * | 1982-12-16 | 1985-09-17 | North American Philips Consumer Electronics Corp. | CRT lensing electrodes having apertures defined by tapered sidewalls |
| JPS6028139A (en) * | 1983-07-25 | 1985-02-13 | Hitachi Ltd | Electron gun for color picture tube |
| KR100405751B1 (en) * | 2001-06-01 | 2003-11-14 | 엘지전자 주식회사 | A electron gun for cathode tube |
-
1979
- 1979-12-10 JP JP15907579A patent/JPS5682549A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5682549A (en) | 1981-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4599534A (en) | Electron gun for color picture tube | |
| US4851741A (en) | Electron gun for color picture tube | |
| US4764704A (en) | Color cathode-ray tube having a three-lens electron gun | |
| JPS6329376B2 (en) | ||
| JPS6329377B2 (en) | ||
| US6570349B2 (en) | Cathode-ray tube apparatus | |
| JPH11260284A (en) | Color cathode ray tube | |
| US6614156B2 (en) | Cathode-ray tube apparatus | |
| KR100443160B1 (en) | Cathode ray tube apparatus | |
| JPS6311743B2 (en) | ||
| JP3742122B2 (en) | In-line electron gun for color picture tubes | |
| JP3038217B2 (en) | Color picture tube equipment | |
| KR100322079B1 (en) | Electron gun of color picture tube | |
| US6373178B1 (en) | Electron gun for color cathode ray tube | |
| KR200363912Y1 (en) | electron gun color cathode ray tube | |
| JP2868832B2 (en) | Electron gun | |
| KR0170426B1 (en) | Electron gun for color cathode ray tube using electrode | |
| JP3348869B2 (en) | Color cathode ray tube | |
| KR100205421B1 (en) | Electron gun for colored cathode ray tube | |
| KR100447150B1 (en) | Electron gun for color cathode ray tube | |
| KR100232142B1 (en) | Electron gun for color crt | |
| JPS6322606Y2 (en) | ||
| KR0142850B1 (en) | Electron gun for colored cathode ray tube | |
| KR0166872B1 (en) | Main lens unit structure of electron gun for color cathode ray tube | |
| JPH0138347B2 (en) |