JPS6329535A - Wire bonder - Google Patents

Wire bonder

Info

Publication number
JPS6329535A
JPS6329535A JP61173341A JP17334186A JPS6329535A JP S6329535 A JPS6329535 A JP S6329535A JP 61173341 A JP61173341 A JP 61173341A JP 17334186 A JP17334186 A JP 17334186A JP S6329535 A JPS6329535 A JP S6329535A
Authority
JP
Japan
Prior art keywords
bonding
wire
chip
ball
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61173341A
Other languages
Japanese (ja)
Inventor
Minoru Yoshida
稔 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61173341A priority Critical patent/JPS6329535A/en
Publication of JPS6329535A publication Critical patent/JPS6329535A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07141Means for applying energy, e.g. ovens or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • H10W72/07533Ultrasonic bonding, e.g. thermosonic bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a perfect wire bonding state, in a thermocompressing bonding type wire bonder, by providing a local heater, which locally heats a wire bonding part, thereby using the conventional thermocompressing bonding and/or ultrasonic waves. CONSTITUTION:A driving part 8 is made to work on a lead frame 2, which is heated by a heat block 1 based on the data of a position recognizing part 7. A local heater 9 is operated only during bonding, and heat shortage on a chip 10 is replenished. Under this state, ball bonding is performed. Thereafter, a capillary 4 is moved to the side of the lead frame. The local heater 9 is operated again only during the bonding, and stitch bonding is performed. Thereafter, a wire 5 is fused and cut with a torch 6, and a ball part is formed. Then, for another electrode on the chip 10, the local heater 9 is operated only during the bonding, and heat shortage on the chip 10 is replenished. Under this state, the ball bonding is performed. Since the bonding is performed with the heat shortage at the bonding part being replenished, high quality wire bonding can be performed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置用のワイヤボンダーに関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonder for semiconductor devices.

〔従来の技術〕[Conventional technology]

第2図は従来の熱圧着形ワイヤボンダーの概要図であり
、図において、lはヒートブロック部、2はこのヒート
ブロック部1にセントされた、チップ付けされたトラン
ジスタリードフレーム、3はボンディングアーム、4は
ボンディングアーム3先端にセットされたキャピラリイ
、5はキャピラリイ4にセットされたワイヤ、6はワイ
ヤ5を溶断するためのトーチ、7はワイヤボンド位置認
識部、8はボンディングヘッド駆動部である。
FIG. 2 is a schematic diagram of a conventional thermocompression type wire bonder. In the figure, l is a heat block part, 2 is a transistor lead frame with a chip attached to the heat block part 1, and 3 is a bonding arm. , 4 is a capillary set at the tip of the bonding arm 3, 5 is a wire set in the capillary 4, 6 is a torch for melting the wire 5, 7 is a wire bond position recognition unit, and 8 is a bonding head drive unit It is.

次に動作について説明する。ヒートブロック部1により
加熱されたトランジスタリードフレーム2にワイヤボン
ド位置認五Δ部7の情報によりあらかじめプログラムさ
れた通り、ボンディングヘッド駆動部8を稼動させ、チ
ップ10上にボールボンドし、その後キャピラリイ4を
リードフレーム側に移動させてステッチボンドを行ない
、その後トーチ6によりワイヤ5を溶断し、ボールを形
成させる。次に、チップ10上のもう一方の電極二こボ
ールボンドし、その後キャビラリイ4をもう一方のリー
ドフレーノ・側に移動させてステッチボンドを行ない、
その後再びトーチ6によりワイヤを溶断し、ボールを形
成させる。以上で1トランジスタのワイヤボンドが完了
する。
Next, the operation will be explained. The bonding head drive section 8 is operated to perform ball bonding on the chip 10 as programmed in advance based on the information of the wire bond position recognition section 7 on the transistor lead frame 2 heated by the heat block section 1, and then the capillary is placed on the chip 10. 4 is moved to the lead frame side and stitch bonding is performed, and then the wire 5 is cut by melting with a torch 6 to form a ball. Next, ball bond the other two electrodes on the chip 10, then move the cavity 4 to the other lead flannel side and perform stitch bonding.
Thereafter, the wire is melted again using the torch 6 to form a ball. This completes the wire bonding of one transistor.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の熱圧着形ワイヤボンダーは以上のように構成され
ているが、金、シリコン系ソルダー使用のチップにおい
ては、熱伝導率の高い半導体装置用フレーム材の場合に
は熱が放散しやすくポンディング部が熱不足となりやす
いため使用できず、このため、熱圧着と超音波を併用し
ていたが、これによってもやはりワイヤボンディング不
具合が生じ、品質低下をおこすという問題点があった。
Conventional thermocompression type wire bonders are constructed as described above, but in the case of chips using gold or silicon solder, bonding is difficult because heat dissipates easily in the case of semiconductor device frame materials with high thermal conductivity. This could not be used because the parts tend to run out of heat, so thermocompression bonding and ultrasonic waves were used in combination, but this also resulted in wire bonding problems and quality deterioration.

また、低融点の半田ソルダーやエポキシ樹脂ソルダー使
用のチップの場合にはこれらがヒートブロック部lによ
り加熱されて溶けてしまうため使用できないという問題
点があった。
Further, in the case of chips using low melting point solder or epoxy resin solder, there is a problem that they cannot be used because they are heated and melted by the heat block l.

この発明は、上記のような問題点を解決するためになさ
れたもので、従来の熱圧着と、あるいはさらに超音波と
併用することにより、完全なワイヤボンディング状態を
得ることができ、半田ソルダーやエポキシ樹脂ソルダー
使用のチップにおいても使用可能なワイヤボンダーを提
供することを目的とする。
This invention was made to solve the above problems, and by using conventional thermocompression bonding or even ultrasonic waves, it is possible to obtain a perfect wire bonding state, and it is possible to obtain a perfect wire bonding condition without using solder or solder. The purpose of the present invention is to provide a wire bonder that can be used even for chips using epoxy resin solder.

〔問題点を解決するため手段〕[Means to solve the problem]

この発明にかかるワイヤボンダーは、熱圧着形ワイヤボ
ンダーにおいて、ワイヤボンディング部を局部的に加熱
さ一壮る局部加熱装置を設けたものである。
The wire bonder according to the present invention is a thermocompression type wire bonder that is provided with a local heating device that locally heats the wire bonding portion.

〔1乍用〕 この発明においては、熱圧着形ワイヤボンダーにおいて
上記局部加熱装置を設けたから、従来の熱圧着の熱不足
を補ない、完全なワイヤボンディング状態を得ることが
できる。また、半田ソルダーやエポキシ樹脂ソルダー使
用のチップにおいても、ヒートブロック部による加熱を
行なわず、ワイヤボンディング部のみを局部的に加熱さ
せることにより、この熱圧着形のワイヤボンダーの使用
が可能となる。
[For 1 item] In the present invention, since the above-mentioned local heating device is provided in the thermocompression type wire bonder, it is possible to compensate for the lack of heat in conventional thermocompression bonding and obtain a perfect wire bonding state. Further, even in chips using solder solder or epoxy resin solder, this thermocompression type wire bonder can be used by heating only the wire bonding part locally without heating by the heat block part.

〔実施例〕〔Example〕

以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.

第1図において、■はヒートブロック部、2はこのヒー
トブロック部1にセントされた、チップ付されたトラン
ジスタリードフレーム、3はボンディングアーム、4は
ボンディングアーム3先端にセントされたキャピラリイ
、5はキャビラリイ4にセットされたワイヤ、6はワイ
ヤ5を溶断するためのトーチ、7はワイヤボンド位置認
識部、8はボンディングヘッド駆動部、9はボンディン
グヘッド駆動部8のXY方向への稼動と連動して稼動す
るようにセントされた、ボンディング部を局部的に加熱
するための局部加熱装置である。この局部加熱装置9と
しては例えばレーザー光線装置を用いることができる。
In FIG. 1, ■ is a heat block part, 2 is a transistor lead frame with a chip attached to the heat block part 1, 3 is a bonding arm, 4 is a capillary attached to the tip of the bonding arm 3, and 5 is a capillary attached to the tip of the bonding arm 3. is a wire set in the cavity 4, 6 is a torch for fusing the wire 5, 7 is a wire bond position recognition unit, 8 is a bonding head drive unit, and 9 is linked to the movement of the bonding head drive unit 8 in the X and Y directions. This is a local heating device designed to locally heat the bonding area. As this local heating device 9, for example, a laser beam device can be used.

次に動作について説明する。ヒートブロック部1により
加熱されたトランジスタリードフレーム2に、ワイヤボ
ンド位五認ΔΔ部7の情報によりあらかじめプログラム
された通リボンディングへンド駆動部8を稼動させると
ともに、局部加熱装置9をボンディング中のみ稼動させ
てチップ10上の熱不足を補ないつつボールボンドし、
その後キャピラリイ4をリードフレーム側に移動させ、
再び局部加熱装置9をボンディング中のみ稼動させてリ
ードフレーム側の熱不足を補いつつステッチボンドを行
ない、その後トーチ6によりワイヤ5を溶断しポール部
を形成させる0次にチップ10上のもう一方の雪掻に、
局部加熱装置9をボンディング中のみ稼動させてチップ
lO上の熱不足を補いつつボールボンドし、その後キャ
ピラリイ4をリードフレーム側に移動させ、再び局部加
熱装置9をボンディング中のみ稼動させ、リードフレー
ム側の熱不足を補いつつステッチボンドを行ない、その
後トーチ6によりワイヤ5を溶断しボールを形成させる
。以上のようにポンディング部の熱不足を補いつつボン
ディングさせているため、高品質なワイヤボンドが得ら
れる。またさらに超音波をも併用すればより高品質なワ
イヤボンドが得られるものである。
Next, the operation will be explained. On the transistor lead frame 2 heated by the heat block section 1, the wire bonding hand drive section 8, which is programmed in advance based on the information of the wire bonding point ΔΔ section 7, is operated, and the local heating device 9 is operated only during bonding. While operating the chip 10 and making up for the lack of heat on the chip 10, ball bonding is performed.
After that, move capillary 4 to the lead frame side,
Again, the local heating device 9 is operated only during bonding to perform stitch bonding while compensating for the lack of heat on the lead frame side, and then the torch 6 fuses the wire 5 to form a pole portion. To shovel snow,
The local heating device 9 is operated only during bonding to perform ball bonding while compensating for the lack of heat on the chip IO, and then the capillary 4 is moved to the lead frame side, and the local heating device 9 is operated again only during bonding, and the lead frame is heated. Stitch bonding is performed while making up for the lack of heat on the side, and then the wire 5 is fused with a torch 6 to form a ball. As described above, since the bonding is performed while compensating for the lack of heat in the bonding part, a high quality wire bond can be obtained. Furthermore, if ultrasonic waves are also used, higher quality wire bonds can be obtained.

なお、上記実施例では、熱圧着と併用してボンディング
を行なう場合について示したが、ヒートブロック部のヒ
ータを切るか、温度を下げるようにすれば、半田ソルダ
ーやエポキシ樹脂ソルダー使用のチップにも適用できる
In addition, although the above example shows the case where bonding is performed in combination with thermocompression bonding, it can also be used for chips using solder solder or epoxy resin solder by turning off the heater in the heat block section or lowering the temperature. Applicable.

また、上記実施例では、トランジスタ千ノブの場合につ
いて示したが、チップはこれに限らずダイオード、IC
などであってもよく、本発明は任意の半導体装置のワイ
ヤボンダーとして通用できるものである。
Further, in the above embodiment, the case of 1,000 knobs of transistors is shown, but the chip is not limited to this, and may include diodes, ICs, etc.
etc., and the present invention can be used as a wire bonder for any semiconductor device.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、熱圧着形のワイヤボ
ンダーにおいて、ワイヤボンディング部を局部的に加熱
させる局部加熱装置を設けたので、上記局部加熱と熱圧
着とを、あるいはさらに超音波を併用することにより、
高品質なワイヤボンディング状態が得られる効果がある
。また、半導体ソルダーやエポキシ樹脂ソルダー使用の
チップにおいてもこの熱圧着形ワイヤボンダーの使用が
可能となる効果がある。
As described above, according to the present invention, a thermocompression type wire bonder is provided with a local heating device that locally heats the wire bonding part, so that the local heating and thermocompression bonding, or even ultrasonic waves, can be performed. By using together,
This has the effect of providing a high quality wire bonding state. Further, this thermocompression type wire bonder can be used for chips using semiconductor solder or epoxy resin solder.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例によるワイヤボンダーを示
す概略図、第2図は従来の熱圧着形ワイヤボンダーを示
す概略図である。 9・・・局部加熱装置。 なお図中同一符号は同−又は相当部分を示す。 第1図
FIG. 1 is a schematic diagram showing a wire bonder according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a conventional thermocompression type wire bonder. 9...Local heating device. Note that the same reference numerals in the figures indicate the same or equivalent parts. Figure 1

Claims (2)

【特許請求の範囲】[Claims] (1)熱圧着形のワイヤボンダーにおいて、ワイヤボン
ディング部を局部的に加熱させる局部加熱装置を備えた
ことを特徴とするワイヤボンダー。
(1) A wire bonder of thermocompression type, characterized in that it is equipped with a local heating device that locally heats a wire bonding part.
(2)上記局部加熱装置としてレーザ光線装置を用いた
ことを特徴とする特許請求の範囲第1項記載のワイヤボ
ンダー。
(2) The wire bonder according to claim 1, wherein a laser beam device is used as the local heating device.
JP61173341A 1986-07-22 1986-07-22 Wire bonder Pending JPS6329535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61173341A JPS6329535A (en) 1986-07-22 1986-07-22 Wire bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61173341A JPS6329535A (en) 1986-07-22 1986-07-22 Wire bonder

Publications (1)

Publication Number Publication Date
JPS6329535A true JPS6329535A (en) 1988-02-08

Family

ID=15958626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61173341A Pending JPS6329535A (en) 1986-07-22 1986-07-22 Wire bonder

Country Status (1)

Country Link
JP (1) JPS6329535A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6715660B2 (en) * 2001-06-27 2004-04-06 Sanyo Electric Co., Ltd. Recognition device, bonding device, and method of manufacturing a circuit device
US6729528B2 (en) * 2001-06-27 2004-05-04 Sanyo Electric Co., Ltd. Recognition device, bonding device, and method of manufacturing a circuit device
US6824037B2 (en) * 2001-07-25 2004-11-30 Sanyo Electric Co., Ltd. Bonding device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6715660B2 (en) * 2001-06-27 2004-04-06 Sanyo Electric Co., Ltd. Recognition device, bonding device, and method of manufacturing a circuit device
US6729528B2 (en) * 2001-06-27 2004-05-04 Sanyo Electric Co., Ltd. Recognition device, bonding device, and method of manufacturing a circuit device
US7066372B2 (en) * 2001-06-27 2006-06-27 Sanyo Electric Co., Ltd. Recognition device, bonding device, and method of manufacturing a circuit device
US7093744B2 (en) * 2001-06-27 2006-08-22 Sanyo Electric Co., Ltd. Recognition device, bonding device, and method of manufacturing a circuit device
US6824037B2 (en) * 2001-07-25 2004-11-30 Sanyo Electric Co., Ltd. Bonding device

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