JPS63295491A - Metallizing composition - Google Patents

Abstract

PURPOSE:To prevent the formation of pores between substrate and conductor or in the conductor itself and to improve the airtightness by using a metallizing compsn. consisting of specified amts. of CuO, Cu, Pd, Pt, MnO and Ag2O. CONSTITUTION:This metallizing compsn. is composed of 100 parts Cu-based principal component, 20-80 parts Pd and/or Pt and <=10 parts MnO2 and/or <=5 parts Ag2O. The principal component consists of 50-90wt.% CuO and 10-50wt.% Cu. The metallizing compsn. is used to form a metallized surface on ceramics baked at low temp. and improves the airtightness.

Description

Detailed Description of the Invention "Industrial Application Field" The present invention relates to a low melting point, low resistance conductive material that can be co-fired with CEFMIX when forming a metallized surface on low temperature fired ceramics, especially a high density multilayer ceramic wiring board. It is suitably used as a conductive material for the inner wall of a micrometer hole.

"Conventional technology" In recent years, ultra-high densification of IC packages, multilayer wiring boards, etc.
In order to cope with the trend toward higher performance and lower prices, there is a demand for metallized compositions containing copper or oxidized steel as a main component and having good airtightness in conductor parts.

"Problems to be Solved by the Invention" However, steels whose main component is oxidized steel undergo volumetric contraction when heated in a reducing or neutral atmosphere to reduce CuO to Cu and make it conductive. On the other hand, those whose main component is steel,
During the degreasing step in the atmosphere, Cu is oxidized and conversely causes volumetric expansion. Due to such volumetric contraction and expansion, there was a risk that the ceramics and conductor parts would become punctured.

In addition, when the metallized composition is filled in the through hole μ, a void is created between the conductor and the inner wall of the 72 m hole μ due to the above-mentioned shrinkage and the mismatch in firing shrinkage rate between Cu and ceramics. This may cause cracks in the conductor, resulting in poor continuity.

The present invention aims to solve these problems and provide a conductive material with good airtightness.

"Means to solve the problem" The means are based on weight, CuO 60-90% and Cu
20 to 80 parts of one or more selected from Pd and Pt, and M
n (h 10 parts or less and Ag.

One or more types selected from 5 parts or less are added.

"Operation" Cu and CuO are reduced together with the ceramic green sheet or heated and reduced in a neutral atmosphere to become conductive. Cu
The reason why the content ratio of CuO and CuO is limited to the above-mentioned certain range is to offset the volume shrinkage due to the reduction of CuO in the reduction process and the volume expansion due to the oxidation of Cu during the degreasing process, and to minimize the overall volume change. It is.

Pd and pt, together with Cu and CuO, ensure the necessary conductivity and are hardly oxidized or reduced even at high temperatures, so they further reduce the volume change rate of the conductor as a whole. However, if their content is 2 parts per 100 parts of Cu, etc.
If it is less than 0 parts, voids and cracks will be unevenly distributed, and if it exceeds 80 parts, the conductor resistance will increase, which is somewhat disadvantageous for wiring in which several μm holes are connected.

Mn (h is reduced to Mn2O3, MnO, or Mn, which improves the wettability of copper with the ceramic or crystallized glass in the substrate. However, if its content exceeds 12 weight qbf: The weight should not be less than 12 mm, as this may cause interference, leakage failure, or increased resistance.
A liquid phase of a Cu--Ag alloy called l-silver solder is locally formed at the boundaries between copper particles, and the copper particles are densely sintered together.

However, if the content exceeds 8"mt%, the silver solder will form beads on the substrate, resulting in a decrease in adhesion strength with the substrate, so the content is set at 8% by weight or more. Mn
The action of Os and Agz O prevents the formation of pores between the substrate and the conductor or within the conductor itself, thereby improving airtightness.

"Example" 1) Same as sample-5 of the example disclosed in the invention "Crystallization vitrification" described in Japanese Patent Application Laid-Open No. 59-92948 filed by the present applicant, the weight ratio is Zn04 and Mg018. %,
AhOs 88%%5loz 58%.

ZnO to have a composition of 1% each of B2O3 and hoe.

MgCO5, Al(OH)s, SiO2, HsBO
s and HIPO4t-weighed, mixed in a weight machine, aμ
The material was melted at 1450'C using a Mina μ pot, poured into water, rapidly cooled and vitrified, and then ground to an average particle size of 2μ in an alumina Bo μ pot to produce frit.

2) Mix the above frit with an organic binder and a solvent to make it into a fleece, and use the doctor blade method to make it to a thickness of 0.6mm.
Manufactures green sheets.

8) Cu01 with an average particle size of 5μ, Cu with a mean particle size of 15μ, Pd with an average particle diameter of 8μ, Pt with an average particle diameter of 8μ, 1Mn0, 1Mn0, and AgzO powder are mixed in the composition shown in Table 1, and an organic binder and a solvent are mixed to produce a metallized paste. .

4) Pd and pt are added to the surface of the green sheet of 2) above.
A paste with a thickness of 20 μm and a length of 4
Screen print a pattern that will become a conductive layer with 40 strips at 1 inch intervals in a strip shape of 0M1 width 0.5 wm.

5) Provide 800 μΦ through holes at 200 locations in the strip pattern, fill these through holes with the Metafize Paste of 8) above, and place the holes through the through holes in a direction perpendicular to the strip pattern. Add the same strip pattern to 4) above.
Screen print with paste.

6) After laminating 6 screen-printed green sheets and 1 thick base sheet and bonding them with heat, 5
Cut to 0x50■.

7) The temperature of the cut laminate was raised to 760° C. in the atmosphere for 8 hours, and the heating was maintained for 1.0.2 to 1.0 hours.

8) Next, transfer one product Jfl into a hydrogen atmosphere and heat it from room temperature to 850°C at a temperature increase rate of 0.5°C/min.
．． After holding for 5 to 1.5 hours, 950
``Fired in O.

Through the steps 1) to 8) above, the patterns 1.1...1 of each layer are electrically connected through the through holes 2.2... as shown in Figure 1. 9. Manufacturing the substrate 8.

When the airtightness of the multilayer substrate 8 was measured using a He detector, it was I
It was below.

"effect" The airtightness of the conductor part is improved.

[Brief explanation of drawings]

FIG. 1 shows a cross-sectional view of a multilayer substrate manufactured according to a manufacturing method according to an embodiment of the present invention. Procedural amendment (voluntary) July a, 1985 1, Indication of the case 1988 Patent Application No. 129441 2, Name of the invention Metaphys Composition 3, Person making the amendment Relationship to the case Patent applicant [address] Postal Code 467-91 4-14-18 Takatsuji-cho, Mizuho-ku, Nagoya City, In the specification to be amended, the scope of claims and details of the invention 5. Contents of the amendment (1) The present application and the scope of claims. I will correct it as shown in the attached sheet. (2) In the 5th line from the bottom of the first page of the specification, “Sμm hole μ
Correct "Inner wall" to "Inside through hole". (8) On page 8, line 8, [AgOJ is corrected to r Ag, o J. (4) In the fifth line from the bottom of page 5, [5μ CuOJ is corrected to [1.5μ CuOJ]. Above (Claims) "On a weight basis, CuO50-90% and Cu10-60%"
%, 20 to 80 parts of one or more selected from Pd and Pt, and Mn0210
A Metaphys composition comprising at least one selected from the group consisting of 5 parts or less of AggO and 5 parts or less of AggO. ”

Claims (1)

[Claims] By weight, CuO 50-90% and Cu 10-50%
20 to 80 parts of one or more selected from Pd and Pt and MnO_210 per 100 parts of the main component consisting of
A metallizing composition comprising at least one selected from the group consisting of 5 parts or less of AgO and 5 parts or less of AgO.