JPS63318529A - Optical integrated circuit - Google Patents
Optical integrated circuitInfo
- Publication number
- JPS63318529A JPS63318529A JP62154644A JP15464487A JPS63318529A JP S63318529 A JPS63318529 A JP S63318529A JP 62154644 A JP62154644 A JP 62154644A JP 15464487 A JP15464487 A JP 15464487A JP S63318529 A JPS63318529 A JP S63318529A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- integrated circuit
- semiconductor substrate
- high reflectance
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光通信および光情報処理分野における光集積
回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to optical integrated circuits in the fields of optical communications and optical information processing.
従来の技術
近年、光情報処理の分野において大容量、高速通信シス
テムの必要性が高まってきている。なかでもコヒーレン
ト通信方法は有望なものとしてその実現に期待が集まっ
ている。この方法は送られてきた微小シグナルを、局発
信号とミキシングし、それらを光検出器に導入すること
により、送信側信号を光のビートシグナルとして読み出
そうとするものである。BACKGROUND OF THE INVENTION In recent years, the need for high-capacity, high-speed communication systems has been increasing in the field of optical information processing. Among these, coherent communication methods are considered to be promising and there are high hopes for their realization. This method attempts to read out the sending signal as an optical beat signal by mixing the sent minute signal with a local signal and introducing the mixture into a photodetector.
発明が解決しようとする問題点
しかしながら、これらを実現するためには多くの光学コ
ンポーネントを必要とし、かつ精度よくかつ安定なアラ
イメントが不可欠となる。これらの問題が、コヒーレン
ト通信を実現する上で１つの大きな障害となっている。Problems to be Solved by the Invention However, in order to realize these, many optical components are required, and accurate and stable alignment is essential. These problems are one of the major obstacles in realizing coherent communication.
問題点を解決するための手段
そこで本発明の光集積回路では、このような問題点を解
決するため、半導体基板上に、一端が高反射率を有する
よう構成されたストライプ状に発光する発光部と前記発
光部から発した光がなめらかにつながるように構成され
た３次元光導波路と、前記３次元光導波路を１つの入力
ポートとするような２×２光スイッチを配置する。さら
に、前記光スイッチの出力ポートのうち一方が高反射率
を有するよう終端し、他方は前記半導体基板の一端から
入射した受信光を導波し得る３次元光導波路と合流する
形で、前記半導体基板上の一部に形成された第１の光検
出器に導びかれるよう配置する。Means for Solving the Problems In order to solve these problems, the optical integrated circuit of the present invention has a light emitting section on a semiconductor substrate that emits light in the form of a stripe, one end of which has a high reflectance. A three-dimensional optical waveguide configured to smoothly connect the light emitted from the light emitting section, and a 2×2 optical switch having the three-dimensional optical waveguide as one input port are arranged. Further, one of the output ports of the optical switch is terminated to have a high reflectance, and the other is configured to merge with a three-dimensional optical waveguide capable of guiding received light incident from one end of the semiconductor substrate. The photodetector is placed so as to be guided by a first photodetector formed on a portion of the substrate.
また、前記元スイッチの１つの入力ポートは、前記半導
体基板上の一部に形成された第２の光検出器に接続され
ている。Further, one input port of the source switch is connected to a second photodetector formed on a portion of the semiconductor substrate.
さらには、前記光スイッチの１つの出力ポートに設けら
れた高反射率を有するものとして、回折波長可変の回折
格子を備えるものであってもよい。Furthermore, a diffraction grating having a high reflectance and having a variable diffraction wavelength may be provided at one output port of the optical switch.
作用
上述のような構成において、発光部端面と、光スイッチ
の出力ポートの高反射率端面の間で、外部共振器レーザ
が構成され、これが局部発振器として機能する。この局
部発振器の周波数を受信号の周波数近傍に設定すること
によシ、このレーザ光の一部と外部からの光信号を、導
波路内でミキシングした後、第１の光検出器に導入する
ことによシ、送信側の情報をヘテロダイン検波すること
が可能となる。Operation In the configuration as described above, an external cavity laser is constructed between the end face of the light emitting part and the high reflectance end face of the output port of the optical switch, and this functions as a local oscillator. By setting the frequency of this local oscillator near the frequency of the received signal, part of this laser light and an external optical signal are mixed within the waveguide and then introduced into the first photodetector. In particular, it becomes possible to perform heterodyne detection of information on the transmitting side.
また第２の光検出器の設置によシ、局発光のモニタも容
易に行なうことができ、局発光のムＰＣ動作が可能とな
る。Further, by installing the second photodetector, the local light can be easily monitored, and the local light can be operated as a PC.
実施例
図は本発明の光集積回路の第１の実施例を示すもので、
１は半導体基板、２は発光部、３は３次元光導波路、４
は２×２光スイッチ、６および７は光検出器、６は反射
膜、８は外部からの信号を光検出器５に導くための３次
元光導波路である。The embodiment diagram shows the first embodiment of the optical integrated circuit of the present invention.
1 is a semiconductor substrate, 2 is a light emitting part, 3 is a three-dimensional optical waveguide, 4
is a 2×2 optical switch, 6 and 7 are photodetectors, 6 is a reflective film, and 8 is a three-dimensional optical waveguide for guiding external signals to the photodetector 5.
ここで、構成材料はＧａＡｓｔ、 ＩｎＰ又はＺｎＳ等
の■−Ｖもしくは■−■の化合物半導体が望ましいが、
３次元光導波路３等のパッシブな部分に関しては上述の
半導体材料に限定するものではない。これらのことは以
下の実施例についても同様である。Here, the constituent material is preferably a ■-V or ■-■ compound semiconductor such as GaAst, InP or ZnS, but
The passive parts such as the three-dimensional optical waveguide 3 are not limited to the above-mentioned semiconductor materials. The same applies to the following examples.
発光部２にて発した光は３次元光導波路３を通り、光ス
イッチ４をへて反射膜６で反射され、活性部（発光部）
２に帰還され、これが外部共振器型レーザとして動作す
る。この光の一部を光スイッチ４によりとシ出し、３次
元光導波路８によシ導入された受信光と合波し、光検出
器５に導びくことにより外部からの信号を読み出すもの
である。The light emitted from the light emitting section 2 passes through the three-dimensional optical waveguide 3, passes through the optical switch 4, is reflected by the reflective film 6, and is activated by the active section (light emitting section).
2, which operates as an external cavity laser. A part of this light is outputted by the optical switch 4, combined with the received light introduced into the three-dimensional optical waveguide 8, and guided to the photodetector 5, thereby reading out signals from the outside. .
また反射膜６のかわシに、回折波長可変の回折格子を配
置することによシ、局部発振光の周波数を制御すること
によりヘテロダイン受信時の周波数帯に自由度をもたせ
ることが可能となる。Furthermore, by arranging a diffraction grating capable of varying the diffraction wavelength on the edge of the reflective film 6, it is possible to control the frequency of the locally oscillated light, thereby providing a degree of freedom in the frequency band during heterodyne reception.
また、光検出器７により局部発振用のパワーをモニタす
ることが可能となり、精度よい受信が行なわれる。Furthermore, it becomes possible to monitor the power for local oscillation by the photodetector 7, and accurate reception is performed.
発明の効果
上述のように本発明によれば、光信号を局部発信信号と
ミキシングし、ビート検出方法を実現するに必要な光学
的要素を同一基板上に集積化することにより、複雑なア
ライメント等の必要がなくなる。また回折格子の回折波
長を制御することによシ、送られてくる信号をヘテロダ
イン検出する時の周波数帯に自由度が得られる。Effects of the Invention As described above, according to the present invention, by mixing an optical signal with a local oscillation signal and integrating optical elements necessary to realize a beat detection method on the same substrate, complicated alignment etc. There is no need for Furthermore, by controlling the diffraction wavelength of the diffraction grating, a degree of freedom can be obtained in the frequency band when heterodyne detecting the transmitted signal.
図は本発明の一実施例における光集積回路の構成を示す
上面図である。
１・・・・・・半導体基板、２・・・・・・発光部、３
・・・・・・３次元光導波路、４・・・・・・２×２光
スイッチ、５．７・・・・・・光検出器、６・・・・・
・反射膜、８・・・・・・３次元光導波路。The figure is a top view showing the configuration of an optical integrated circuit in one embodiment of the present invention. 1...Semiconductor substrate, 2...Light emitting section, 3
...Three-dimensional optical waveguide, 4...2x2 optical switch, 5.7...Photodetector, 6...
・Reflection film, 8...Three-dimensional optical waveguide.
Claims (2)
されたストライプ状に発光する発光部と前記発光部から
発した光がなめらかにつながるように構成された３次元
光導波路と、前記３次元光導波路を１つの入力ポートと
するような２×２光スイッチが配置され、前記光スイッ
チの出力ポートのうち一方が高反射率を有するもので終
端し、他方は前記半導体基板の一端から入射した受信光
を導波し得る３次元光導波路と合流する形で前記半導体
基板上の一部に形成された第１の光検出器に導びかれる
ように配置され、前記光スイッチの１つの入力ポートが
、前記半導体基板上の一部に形成された第２の光検出器
に接続されている光集積回路。(1) A three-dimensional optical waveguide configured such that a light emitting section that emits light in a stripe shape and whose one end has a high reflectance is formed on a semiconductor substrate, and the light emitted from the light emitting section is smoothly connected; A 2×2 optical switch is arranged in which one input port is a dimensional optical waveguide, and one of the output ports of the optical switch is terminated with one having a high reflectance, and the other is terminated with an input port from one end of the semiconductor substrate. one input of the optical switch; An optical integrated circuit, wherein a port is connected to a second photodetector formed on a portion of the semiconductor substrate.
格子が配置されている特許請求の範囲第１項記載の光集
積回路。(2) The optical integrated circuit according to claim 1, wherein a diffraction grating with a variable diffraction wavelength is disposed as having a high reflectance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15464487A JP2523650B2 (en) | 1987-06-22 | 1987-06-22 | Optical integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15464487A JP2523650B2 (en) | 1987-06-22 | 1987-06-22 | Optical integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63318529A true JPS63318529A (en) | 1988-12-27 |
| JP2523650B2 JP2523650B2 (en) | 1996-08-14 |
Family
ID=15588726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15464487A Expired - Fee Related JP2523650B2 (en) | 1987-06-22 | 1987-06-22 | Optical integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2523650B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0617314A4 (en) * | 1992-09-10 | 1995-10-18 | Fujitsu Ltd | Optical circuit system and its constituents. |
| WO1996018131A1 (en) * | 1994-12-08 | 1996-06-13 | Northern Telecom Limited | Optical waveguide cross-point switch |
| US6693736B1 (en) | 1992-09-10 | 2004-02-17 | Fujitsu Limited | Optical circuit system and components of same |
| US7421002B2 (en) * | 2005-11-08 | 2008-09-02 | Kabushiki Kaisha Toshiba | Laser-induced optical wiring apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3245932B2 (en) | 1992-02-06 | 2002-01-15 | キヤノン株式会社 | Optical semiconductor device, driving method thereof, and optical transmission system using the same |
-
1987
- 1987-06-22 JP JP15464487A patent/JP2523650B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0617314A4 (en) * | 1992-09-10 | 1995-10-18 | Fujitsu Ltd | Optical circuit system and its constituents. |
| US6215585B1 (en) | 1992-09-10 | 2001-04-10 | Fujitsu Limited | Optical circuit system and components of same technical field |
| US6693736B1 (en) | 1992-09-10 | 2004-02-17 | Fujitsu Limited | Optical circuit system and components of same |
| WO1996018131A1 (en) * | 1994-12-08 | 1996-06-13 | Northern Telecom Limited | Optical waveguide cross-point switch |
| US7421002B2 (en) * | 2005-11-08 | 2008-09-02 | Kabushiki Kaisha Toshiba | Laser-induced optical wiring apparatus |
| US7773657B2 (en) | 2005-11-08 | 2010-08-10 | Kabushiki Kaisha Toshiba | Laser-induced optical wiring apparatus |
| US8000370B2 (en) | 2005-11-08 | 2011-08-16 | Kabushiki Kaisha Toshiba | Laser-induced optical wiring apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2523650B2 (en) | 1996-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |