JPS6333629U - - Google Patents
Info
- Publication number
- JPS6333629U JPS6333629U JP12750586U JP12750586U JPS6333629U JP S6333629 U JPS6333629 U JP S6333629U JP 12750586 U JP12750586 U JP 12750586U JP 12750586 U JP12750586 U JP 12750586U JP S6333629 U JPS6333629 U JP S6333629U
- Authority
- JP
- Japan
- Prior art keywords
- contact hole
- film
- width
- insulating film
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本考案に係る半導体装置の導電パター
ンの略示平面図であり、第２図は第１図に示す導
電パターンのコンタクト孔部分の拡大平面図であ
る。また第３図はコンタクト孔形成部位の拡大縦
断面図である。
１……半導体ウエーハ〔基板〕、２ａ，２ｂ…
…酸化膜、３ａ，３ｂ……絶縁膜、４……導電膜
、５……ゲートポリＳｉ、６ａ，６ｂ……コンタ
クト孔、Ｌ１，Ｌ２……コンタクト孔の幅寸法、
Ｌ０……導電パターンの幅寸法。
FIG. 1 is a schematic plan view of a conductive pattern of a semiconductor device according to the present invention, and FIG. 2 is an enlarged plan view of a contact hole portion of the conductive pattern shown in FIG. Further, FIG. 3 is an enlarged longitudinal cross-sectional view of a contact hole forming region. 1... Semiconductor wafer [substrate], 2a, 2b...
... Oxide film, 3a, 3b ... Insulating film, 4 ... Conductive film, 5 ... Gate poly-Si, 6a, 6b ... Contact hole, L 1 , L 2 ... Width dimension of contact hole,
L0 ... Width dimension of the conductive pattern.
Claims (1)
と導電膜とを順次積層したものに於いて、 前記絶縁膜にコンタクト孔を形成し、該コンタ
クト孔上に被着される導電パターンの幅寸法を、
前記コンタクト孔の幅寸法と同等以下に設定した
ことを特徴とする半導体装置。[Claims for Utility Model Registration] In a semiconductor wafer in which an insulating film and a conductive film are sequentially laminated with an oxide film interposed therebetween, a contact hole is formed in the insulating film, and a film is deposited over the contact hole. The width dimension of the conductive pattern to be
A semiconductor device characterized in that the width of the contact hole is set to be equal to or smaller than the width of the contact hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12750586U JPH0322916Y2 (en) | 1986-08-20 | 1986-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12750586U JPH0322916Y2 (en) | 1986-08-20 | 1986-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6333629U true JPS6333629U (en) | 1988-03-04 |
| JPH0322916Y2 JPH0322916Y2 (en) | 1991-05-20 |
Family
ID=31022321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12750586U Expired JPH0322916Y2 (en) | 1986-08-20 | 1986-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0322916Y2 (en) |
-
1986
- 1986-08-20 JP JP12750586U patent/JPH0322916Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0322916Y2 (en) | 1991-05-20 |