JPS6333635U - - Google Patents
Info
- Publication number
- JPS6333635U JPS6333635U JP12582886U JP12582886U JPS6333635U JP S6333635 U JPS6333635 U JP S6333635U JP 12582886 U JP12582886 U JP 12582886U JP 12582886 U JP12582886 U JP 12582886U JP S6333635 U JPS6333635 U JP S6333635U
- Authority
- JP
- Japan
- Prior art keywords
- type
- conductivity type
- diffusion region
- region
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
第１図は本考案の一実施例を示す素子パターン
図、第２図は従来のＮＰＮトランジスタパターン
図、第３図は従来のラテラルＰＮＰトランジスタ
パターン図、第４図は従来のサブＰＮＰトランジ
スタのパターン図である。
１：Ｐ形拡散によるアイソレーシヨン領域、２
，４：Ｐ形拡散領域、１１，１２，１３，１４：
Ｎ形エピタキシヤル領域、２０，２２，２４，２
６：Ｎ形拡散領域、３０，３２，３４：Ｐ形拡散
領域、４０，４２，４４：Ｐ形拡散領域、５０，
５２：Ｎ形拡散領域、３，５，２１，２３，２５
，２７，３１，３３，３５，４１，４３，４５，
５１，５３：各領域の配線部。
Fig. 1 is a device pattern diagram showing an embodiment of the present invention, Fig. 2 is a conventional NPN transistor pattern diagram, Fig. 3 is a conventional lateral PNP transistor pattern diagram, and Fig. 4 is a conventional sub-PNP transistor pattern. It is a diagram. 1: Isolation region due to P-type diffusion, 2
, 4: P-type diffusion region, 11, 12, 13, 14:
N-type epitaxial region, 20, 22, 24, 2
6: N-type diffusion region, 30, 32, 34: P-type diffusion region, 40, 42, 44: P-type diffusion region, 50,
52: N-type diffusion region, 3, 5, 21, 23, 25
,27,31,33,35,41,43,45,
51, 53: Wiring section of each area.
Claims (1)
ヤル層があり、そのエピタキシヤル層を第１種導
電形拡散領域で分離するとともに該領域に配線部
を設け、また、前述エピタキシヤル層内に複数の
第２種導電形拡散領域を設け、その拡散領域の一
部に第１種導電形拡散領域を設け、各々前述エピ
タキシヤル層部、その内部の第２種導電形拡散領
域、第１種導電形拡散領域に配線部を設けたこと
を特徴とするバイポーラマスタスライス用構成素
子。 There is an epitaxial layer of type 2 conductivity type on a substrate of type 1 conductivity type, and the epitaxial layer is separated by a diffusion region of type 1 conductivity type, and a wiring portion is provided in this region. A plurality of type 2 conductivity type diffusion regions are provided in the region, and a first type conductivity type diffusion region is provided in a part of the diffusion region, and each of the epitaxial layer portions, the second type conductivity type diffusion region therein, and the first type conductivity type diffusion region are provided in a part of the diffusion regions. A component for bipolar master slicing, characterized in that a wiring portion is provided in a seed conductivity type diffusion region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12582886U JPS6333635U (en) | 1986-08-20 | 1986-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12582886U JPS6333635U (en) | 1986-08-20 | 1986-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6333635U true JPS6333635U (en) | 1988-03-04 |
Family
ID=31019066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12582886U Pending JPS6333635U (en) | 1986-08-20 | 1986-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6333635U (en) |
-
1986
- 1986-08-20 JP JP12582886U patent/JPS6333635U/ja active Pending
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