JPS6335417B2 - - Google Patents

Info

Publication number: JPS6335417B2
Authority: JP; Japan
Prior art keywords: metal; layer; laminate; atoms; substrate
Prior art date: 1981-08-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP12303081A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5824442A (ja

Inventor

Toshiro Yamashina

Tatsuo Obata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Teijin Ltd

Original Assignee

Teijin Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-08-07

Filing date

1981-08-07

Publication date

1988-07-14

1981-08-07 Application filed by Teijin Ltd filed Critical Teijin Ltd

1981-08-07 Priority to JP12303081A priority Critical patent/JPS5824442A/ja

1983-02-14 Publication of JPS5824442A publication Critical patent/JPS5824442A/ja

1988-07-14 Publication of JPS6335417B2 publication Critical patent/JPS6335417B2/ja

Status Granted legal-status Critical Current

Links

239000010410 layer Substances 0.000 claims description 108
229910052751 metal Inorganic materials 0.000 claims description 81
239000002184 metal Substances 0.000 claims description 79
239000010936 titanium Substances 0.000 claims description 44
239000000758 substrate Substances 0.000 claims description 36
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
229910052719 titanium Inorganic materials 0.000 claims description 27
229910052799 carbon Inorganic materials 0.000 claims description 26
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 25
238000010438 heat treatment Methods 0.000 claims description 23
238000000034 method Methods 0.000 claims description 23
229910052750 molybdenum Inorganic materials 0.000 claims description 23
239000011241 protective layer Substances 0.000 claims description 23
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
239000011733 molybdenum Substances 0.000 claims description 20
229910052755 nonmetal Inorganic materials 0.000 claims description 20
239000011651 chromium Substances 0.000 claims description 18
150000001875 compounds Chemical class 0.000 claims description 15
229910052759 nickel Inorganic materials 0.000 claims description 11
239000010955 niobium Substances 0.000 claims description 11
229910045601 alloy Inorganic materials 0.000 claims description 10
239000000956 alloy Substances 0.000 claims description 10
229910052804 chromium Inorganic materials 0.000 claims description 10
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
238000004519 manufacturing process Methods 0.000 claims description 8
LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 8
229910052710 silicon Inorganic materials 0.000 claims description 7
229910052721 tungsten Inorganic materials 0.000 claims description 7
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
229910052796 boron Inorganic materials 0.000 claims description 6
229910052758 niobium Inorganic materials 0.000 claims description 6
239000010703 silicon Substances 0.000 claims description 6
229910052715 tantalum Inorganic materials 0.000 claims description 6
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 5
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
239000010937 tungsten Substances 0.000 claims description 5
125000004429 atom Chemical group 0.000 description 39
238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 13
239000010408 film Substances 0.000 description 12
239000000463 material Substances 0.000 description 10
239000000853 adhesive Substances 0.000 description 7
230000001070 adhesive effect Effects 0.000 description 7
238000010894 electron beam technology Methods 0.000 description 7
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
238000006243 chemical reaction Methods 0.000 description 6
150000002736 metal compounds Chemical class 0.000 description 6
238000001704 evaporation Methods 0.000 description 5
230000008020 evaporation Effects 0.000 description 5
230000004927 fusion Effects 0.000 description 5
239000007789 gas Substances 0.000 description 5
150000002739 metals Chemical class 0.000 description 5
238000004544 sputter deposition Methods 0.000 description 5
230000015572 biosynthetic process Effects 0.000 description 4
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
238000012986 modification Methods 0.000 description 4
230000004048 modification Effects 0.000 description 4
239000010409 thin film Substances 0.000 description 4
229910052786 argon Inorganic materials 0.000 description 3
238000007738 vacuum evaporation Methods 0.000 description 3
238000007740 vapor deposition Methods 0.000 description 3
239000007795 chemical reaction product Substances 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
230000007547 defect Effects 0.000 description 2
238000005530 etching Methods 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
239000010439 graphite Substances 0.000 description 2
238000010884 ion-beam technique Methods 0.000 description 2
238000001755 magnetron sputter deposition Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000005546 reactive sputtering Methods 0.000 description 2
229910052720 vanadium Inorganic materials 0.000 description 2
238000005299 abrasion Methods 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
239000013590 bulk material Substances 0.000 description 1
125000004432 carbon atom Chemical group C* 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000001941 electron spectroscopy Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000006698 induction Effects 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000007733 ion plating Methods 0.000 description 1
238000010030 laminating Methods 0.000 description 1
238000004093 laser heating Methods 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
238000007750 plasma spraying Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
238000004064 recycling Methods 0.000 description 1
238000003303 reheating Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
230000008685 targeting Effects 0.000 description 1
150000003608 titanium Chemical class 0.000 description 1
MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
229910052726 zirconium Inorganic materials 0.000 description 1

Landscapes

Laminated Bodies (AREA)

JP12303081A 1981-08-07 1981-08-07 積層体及びその製造方法 Granted JPS5824442A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP12303081A JPS5824442A (ja)	1981-08-07	1981-08-07	積層体及びその製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP12303081A JPS5824442A (ja)	1981-08-07	1981-08-07	積層体及びその製造方法

Publications (2)

Publication Number	Publication Date
JPS5824442A JPS5824442A (ja)	1983-02-14
JPS6335417B2 true JPS6335417B2 (de)	1988-07-14

Family

ID=14850473

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP12303081A Granted JPS5824442A (ja)	1981-08-07	1981-08-07	積層体及びその製造方法

Country Status (1)

Country	Link
JP (1)	JPS5824442A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63302032A (ja) *	1987-06-03	1988-12-08	Tokyo Tungsten Co Ltd	Ｔｉ−Ｍｏクラッド板

1981
- 1981-08-07 JP JP12303081A patent/JPS5824442A/ja active Granted

Also Published As

Publication number	Publication date
JPS5824442A (ja)	1983-02-14

Publication	Publication Date	Title
US6152977A (en)	2000-11-28	Surface functionalized diamond crystals and methods for producing same
JP2823592B2 (ja)	1998-11-11	被覆工程で脱炭可能な基体の被覆体
EP0474369B1 (de)	1997-03-05	Diamantartige Kohlenstoffbeschichtungen
JP4028891B2 (ja)	2007-12-26	多成分系硬質物層の製造法および複合体
Gaydaychuk et al.	2019	Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings
Ghailane et al.	2022	Influence of annealing temperature on the microstructure and hardness of TiN coatings deposited by high-power impulse magnetron sputtering
JPH07173608A (ja)	1995-07-11	耐摩耗性被覆部材
JP2825521B2 (ja)	1998-11-18	強く負荷される基材のための硬物質保護層およびその製法
US5262202A (en)	1993-11-16	Heat treated chemically vapor deposited products and treatment method
EP0083842B1 (de)	1989-07-12	Beschichteter Hartmetallkörper und Verfahren zu seiner Herstellung
JPH07268607A (ja)	1995-10-17	ダイヤモンドライクカーボン薄膜を有する物品およびその製造方法
US4873152A (en)	1989-10-10	Heat treated chemically vapor deposited products
JPS6335417B2 (de)	1988-07-14
JPH07109561A (ja)	1995-04-25	窒化クロム膜被覆基体
JP3249278B2 (ja)	2002-01-21	工具用被覆体
GB2252981A (en)	1992-08-26	Diffusion barrier coating for titanium alloys involving alloying
JP3214937B2 (ja)	2001-10-02	ダイヤモンド類被覆部材の製造方法
JPH04301084A (ja)	1992-10-23	耐摩耗性部材およびその製造法
Okada	1983	Thermal and mechanical properties of vapour-deposited TiC coatings for the first wall of a fusion reactor
Satake et al.	2023	Preparation of Ti and Fe Composition Gradient Thin Films by Sputtering with Mixed Powder Targets
JPS60224778A (ja)	1985-11-09	セラミツクス被覆硬質部品
JPH07145483A (ja)	1995-06-06	耐摩耗性被覆部材
Perekrestov et al.	2020	Regularities of structure formation and physical properties of multilayered composites based on W, Ta, Нf, Ti, Mo, Сr, Al, and С
JPH05209274A (ja)	1993-08-20	ダイヤモンド類被覆部材の製造方法
JPS61104078A (ja)	1986-05-22	硬質被覆焼結合金及びその製造方法