JPS6351992B2 - - Google Patents
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- Publication number
- JPS6351992B2 JPS6351992B2 JP56109592A JP10959281A JPS6351992B2 JP S6351992 B2 JPS6351992 B2 JP S6351992B2 JP 56109592 A JP56109592 A JP 56109592A JP 10959281 A JP10959281 A JP 10959281A JP S6351992 B2 JPS6351992 B2 JP S6351992B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- weight
- oxide
- batio
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 20
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 11
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000292 calcium oxide Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 19
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 7
- 229910052573 porcelain Inorganic materials 0.000 description 7
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
本発明は高誘電率系磁器誘電体組成物に係り、
特に誘電率が著しく高く、しかも誘電率の温度変
化率の小さい、積層コンデンサ用として好適な磁
器誘電体組成物に関するものである。
従来、平担な誘電率温度特性を有する磁器誘電
体としては、チタン酸バリウム（BaTiO3）およ
び酸化ビスマス（Bi2O3）を主成分とし、これに
酸化スズ（SnO2）または酸化チタン酸（TiO2）
あるいは酸化ジルコニウム（ZrO2）を添加した
ものがあるが、何れも−30℃から＋85℃の温度範
囲において誘電率の温度変化率を±10％以内にす
ると、誘電率が2000以下と低くなり、また誘電率
が2000以上のものではその誘電率の温度変化率は
上記温度範囲において±10％を越えるものしか得
られなかつた。
一方、かかる問題を解消する磁器誘電体組成物
として、BaTiO3及びBi2O3に、Nb2O5と、CeO2
またはLa2O3とを加え、これによつて±10％以内
の誘電率温度変化率で、しかも300〜3500の誘電
率を達成するものが、特公昭55−21402号公報に
明らかにされている。しかしながら、かかる組成
物中に含まれるBi2O3が、積層コンデンサを作る
場合において、高い焼成温度が採用されると、蒸
発せしめられ、それによつて電極を傷める問題が
あり、それ故Bi2O3の如き成分を含む組成物は、
積層コンデンサ用としては不適当なものであつた
のである。
ここにおいて、本発明者らは、かかる磁器誘電
体組成物について種々検討した結果、その主成分
たるBaTiO3の形成過程において主として出発原
料の炭酸バリウム（BaCO3）から混入する酸化
ストロンチウム（SrO）と酸化カルシウム
（CaO）が誘電率などの電気的特性に悪影響をも
たらし、それ故それらの含有量が特定値以下とな
る高純度のBaTiO3が形成されるようにすると共
に、これに酸化コバルト（Co2O3）、酸化ニオブ
（Nb2O5）、酸化セリウム（CeO2）などを組み合
わせることにより、平担な誘電率温度特性を有
し、しかも高誘電率である、積層コンデンサ用と
して好適な磁器誘電体が得られることを見い出
し、本発明に到達したのである。
すなわち、本発明に係る高誘電率系磁器誘電体
組成物は、SrOとCaOの合計含有量が0.5重量％
以下である高純度のBaTiO395〜99重量％と、
Co2O30.05〜0.5重量％と、Nb2O50.5〜２重量％
と、CeO20.05〜0.5重量％と、TiO2の1.5重量％ま
でとからなるものである。
そして、かくの如き本発明に従う組成の、焼成
品たる磁器誘電体組成物によれば、平担な誘電率
温度特性が達成され、特に−30℃から＋80℃の温
度範囲内において＋25℃の誘電率を基準としたと
きその誘電率の温度変化率が±10％以内であるも
のが容易に得られるのであり、しかも同時にその
誘電率も容易に3000以上、特に4000〜4500もの高
い値と為し得るのである。
また、かかる本発明に従う磁器誘電体組成物に
あつては、Bi2O3、PbO等の蒸発成分を含有して
いないために、高温の焼成温度が採用されても電
極を傷めるようなことは全くなく、それ故積層コ
ンデンサ用として好適に用いられ得るものであ
る。
さらに、本組成物の磁器誘電体は、後述の実施
例にても示される如く3000時間、10KV/mmの電
圧を印加した後の各種性能において優れた特徴を
有しており、このことは10KV/mm以上の耐電圧
性を有する証左であるのであり、また他の組成に
よるチタン酸バリウム系高誘電率磁器誘電体の１
〜７KV/mmに比較しても、かなり耐電圧特性が
高く、従つて本発明による磁器組成物は中・高圧
用磁器コンデンサ用としても好適であるのであ
る。
なお、本発明においては、先ず、高純度の
BaTiO3を95〜99重量％、好ましくは97〜99重量
％の割合で組成物中に含有せしめる必要があり、
その含有割合が多過ぎたり、少な過ぎたりする
と、誘電率が著しく低下したり、誘電率の温度変
化が著しくなる等の問題を生じる。そして、この
高純度のBaTiO3は、SrOとCaOを合計量で0.5重
量％以下となるような割合で含むように形成され
ねばならず、この割合を越えるSrO、CaOの含有
は誘電率を低下せしめ、また誘電率の温度変化率
を大きくする。特に、このようなSrO、CaOは、
BaTiO3の出発原料の一つであるBaCO3から混入
し易いので、BaCO3として、SrO及びCaO含有量
の著しく低下せしめられたもの、即ち、従来の97
〜98％程度の純度のBaCO3に代えて、例えば
SrO、CaOの減少せしめられた純度が99％以上、
好ましくは99.5％以上のBaCO3原料の使用が推奨
される。また、BaTiO3の出発原料の他の一つで
あるTiO2としても、通常の98〜99％程度の純度
のものを用いることは可能であるが、好適には99
％以上、より好ましくは99.5％以上の純度の
TiO2原料が有利に用いられ得るのである。
また、本発明に係る組成物を構成するCo2O3と
Nb2O5は、何れも誘電率の温度変化率を平担化せ
しめる成分であり、Co2O3は0.05〜0.5％、好まし
くは0.09〜0.4％；Nb2O5は0.5〜２％、好ましく
は0.9〜1.5％（いずれも重量基準）の割合にて含
有せしめられる必要がある。なお、Co2O3が、
0.05％より少なくなると、誘電率の温度変化率が
大となり、0.5％より多くなると、誘電率が低く
なる。また、Nb2O5が、0.5％より少ないときに
は焼結不良の問題が惹起され、他方２％より多い
ときには誘電率の温度変化率が大きくなる問題を
生じる。
更に、本発明の組成物中のCeO2は焼成温度を
低下せしめる効果があるが、その割合が0.05％よ
りも少ないと焼結不良となり、また0.5％よりも
多くなると誘電率の温度変化率が大となる。それ
故、CeO2の割合は、0.05〜0.5重量％、好ましく
は0.09〜0.3重量％とする必要がある。
更にまた、TiO2は、CeO2と同様に焼成温度の
低下に寄与するものであるが、その割合が多過ぎ
ると誘電率を低下せしめたり、誘電損失（tanδ）
を大きくするので、1.5重量％までの含有割合と
する必要があり、なかでも0.2〜1.0重量％の割合
で含有せしめることにより、その有効な効果が発
揮される。なお、このTiO2量は、前記高純度の
BaTiO3の形成に際して過剰のTiO2をBaCO3と
組み合わせることによつて導入され得るものであ
る他、必要な量のTiO2を別途に組成物中に配合
せしめることによつても導入せしめられ得るもの
である。
このように、本発明にあつては、所定割合の
BaTiO3、Co2O3、Nb2O5、CeO2、TiO2にて磁器
誘電体を構成すると共に、BaTiO3から持ち込ま
れるSrO＋CaO量を制御することによつて、焼成
品たる本発明に係る磁器誘電体に誘電率等の優れ
た電気的特性を付与せしめ得たのである。
以下に実施例を挙げ、本発明を更に具体的に明
らかにするが、本発明がかかる実施例の記載によ
つて何等の制約も受けるものでないことは言うま
でもないところである。なお、実施例中の部及び
百分率はすべて重量基準で示されている。
実施例
第１表に示される配合割合となるように各成分
原料をボールミルにて均一に湿式混合せしめ、つ
いで900〜1100℃で３時間の間仮焼きして化学反
応を行なわしめた後、再びボールミルにて平均粒
径が１ミクロン程度になるまで粉砕した。なお、
高純度BaTiO3成分を形成するために、SrOと
CaOの合計含有量が種々異なる純度が99.0％以上
のBaCO3と純度が99.9％のTiO2が用いられ、他
の成分と共に、前記ボールミルにて湿式混合せし
められた。
ついで、この混合物を乾燥せしめた後、粘結剤
としてポリビニルアルコールを適当量加え、約１
トン／cm2の圧力にて成形し、直径16m/m、厚さ
0.5m/mの円板上成形物を作製した。
さらに、かくして得られた成形物に対して、約
1350〜1400℃の温度で、３時間の本焼成操作を施
した後、得られた焼成物についてその両面に銀電
極を焼き付けることにより試料と為し、ついで
3000時間、試料１mm当り10KV印加の寿命試験を
行なつた後、それぞれの電気的諸特性を測定して
その結果を第２表に示した。
第１表及び第２表の結果より明らかなように、
本発明に従う組成の組成物、即ち各試料No.中の(a)
及び(b)は、いずれも高い、3000以上の誘電率
（ε）を有し、且つ小誘電損失（tanδ）のもので
あると共に、誘電率の温度に対する変化率の小さ
な特性をも具備しているのである。
これに対して、BaTiO3、Co2O3、Nb2O5、
CeO2、TiO2の含量が同様であつても、SrO＋
CaOの合計含量が0.5％を越える(c)及び(d)の場合
にあつては、本発明に従う(a)及び(b)の場合に比し
て、誘電率（ε）が著しく劣つたものであつた。
The present invention relates to a high permittivity ceramic dielectric composition,
In particular, the present invention relates to a ceramic dielectric composition suitable for use in multilayer capacitors, which has an extremely high dielectric constant and a small rate of change in dielectric constant with temperature. Conventionally, porcelain dielectrics with flat permittivity-temperature characteristics have been mainly composed of barium titanate (BaTiO 3 ) and bismuth oxide (Bi 2 O 3 ), and tin oxide (SnO 2 ) or titanate oxide. ( TiO2 )
Alternatively, there are products to which zirconium oxide (ZrO 2 ) is added, but in both cases, when the temperature change rate of the dielectric constant is kept within ±10% in the temperature range of -30℃ to +85℃, the dielectric constant becomes as low as 2000 or less. Further, in the case of a material having a dielectric constant of 2000 or more, the temperature change rate of the dielectric constant could only exceed ±10% in the above temperature range. On the other hand, as a porcelain dielectric composition that solves this problem, BaTiO 3 and Bi 2 O 3 are combined with Nb 2 O 5 and CeO 2
Or by adding La 2 O 3 , it was disclosed in Japanese Patent Publication No. 55-21402 that a dielectric constant temperature change rate of within ±10% and a dielectric constant of 300 to 3500 can be achieved. There is. However, there is a problem that the Bi 2 O 3 contained in such compositions will evaporate and thereby damage the electrodes if high firing temperatures are employed in making multilayer capacitors; A composition containing ingredients such as 3 is
It was unsuitable for use in multilayer capacitors. Here, as a result of various studies on such ceramic dielectric compositions, the present inventors discovered that strontium oxide (SrO), which is mainly mixed in from barium carbonate (BaCO 3 ) as a starting material, in the formation process of BaTiO 3 as its main component. Calcium oxide (CaO) has a negative effect on the electrical properties such as dielectric constant, so that a high purity BaTiO 3 is formed whose content is below a certain value, and this is supplemented with cobalt oxide (Co). 2 O 3 ), niobium oxide (Nb 2 O 5 ), cerium oxide (CeO 2 ), etc., it has a flat dielectric constant temperature characteristic and a high dielectric constant, making it suitable for multilayer capacitors. They discovered that a porcelain dielectric material could be obtained and arrived at the present invention. That is, the high permittivity ceramic dielectric composition according to the present invention has a total content of SrO and CaO of 0.5% by weight.
High purity BaTiO 3 of 95-99% by weight,
Co 2 O 3 0.05-0.5% by weight and Nb 2 O 5 0.5-2% by weight
0.05 to 0.5% by weight of CeO 2 and up to 1.5% by weight of TiO 2 . According to the porcelain dielectric composition as a fired product having the composition according to the present invention, a flat dielectric constant temperature characteristic is achieved, and in particular, a dielectric constant of +25°C within the temperature range of -30°C to +80°C is achieved. It is easy to obtain a dielectric constant whose temperature change rate is within ±10% when the dielectric constant is taken as a standard, and at the same time, the dielectric constant can also be easily made to a high value of 3000 or more, especially as high as 4000 to 4500. You get it. Furthermore, since the porcelain dielectric composition according to the present invention does not contain evaporable components such as Bi 2 O 3 and PbO, the electrodes will not be damaged even if a high firing temperature is used. Therefore, it can be suitably used for multilayer capacitors. Furthermore, the porcelain dielectric of this composition has excellent characteristics in various performances after applying a voltage of 10KV/mm for 3000 hours, as shown in the examples below. This is proof that it has a voltage resistance of more than /mm, and it is also one of the barium titanate-based high permittivity ceramic dielectrics with other compositions.
Even when compared to ~7 KV/mm, the withstand voltage characteristics are quite high, and therefore the ceramic composition according to the present invention is also suitable for use in medium- and high-voltage ceramic capacitors. In addition, in the present invention, firstly, high purity
It is necessary to contain BaTiO 3 in the composition in a proportion of 95 to 99% by weight, preferably 97 to 99% by weight,
If the content ratio is too high or too low, problems such as a significant decrease in dielectric constant or a significant change in dielectric constant with temperature will occur. This high-purity BaTiO 3 must be formed to contain SrO and CaO in a total amount of 0.5% by weight or less; inclusion of SrO and CaO in excess of this percentage will reduce the dielectric constant. It also increases the temperature change rate of the dielectric constant. In particular, such SrO, CaO,
Since BaCO 3 , which is one of the starting materials for BaTiO 3, is easily contaminated, BaCO 3 is made of a material with significantly reduced SrO and CaO contents, that is, the conventional 97
Instead of ~98% purity BaCO3 , e.g.
Reduced purity of SrO, CaO is more than 99%,
Preferably, it is recommended to use BaCO3 raw material with a content of 99.5% or higher. Furthermore, TiO 2 , which is another starting material for BaTiO 3 , can be used with a purity of about 98 to 99%, but it is preferably 99% pure.
% or more, preferably 99.5% or more purity
TiO 2 raw material can be advantageously used. In addition, Co 2 O 3 constituting the composition according to the present invention
Nb 2 O 5 is a component that flattens the rate of change in dielectric constant with temperature; Co 2 O 3 is 0.05 to 0.5%, preferably 0.09 to 0.4%; Nb 2 O 5 is 0.5 to 2%; Preferably, it needs to be contained in a proportion of 0.9 to 1.5% (both based on weight). Note that Co 2 O 3 is
When it is less than 0.05%, the temperature change rate of the dielectric constant becomes large, and when it is more than 0.5%, the dielectric constant becomes low. Further, when Nb 2 O 5 is less than 0.5%, a problem arises in sintering failure, while when it is more than 2%, a problem arises in that the temperature change rate of the dielectric constant becomes large. Furthermore, CeO 2 in the composition of the present invention has the effect of lowering the sintering temperature, but if its proportion is less than 0.05%, it will result in poor sintering, and if it exceeds 0.5%, the temperature change rate of the dielectric constant will decrease. Becomes large. Therefore, the proportion of CeO2 should be 0.05-0.5% by weight, preferably 0.09-0.3% by weight. Furthermore, like CeO 2 , TiO 2 contributes to lowering the firing temperature, but if its proportion is too large, it may lower the dielectric constant or increase the dielectric loss (tan δ).
Since it increases the content, it is necessary to make the content up to 1.5% by weight, and its effective effect is especially exhibited by containing it in a proportion of 0.2 to 1.0% by weight. Note that this amount of TiO 2 is the same as the above-mentioned high purity
In addition to being able to be introduced by combining excess TiO 2 with BaCO 3 during the formation of BaTiO 3 , it can also be introduced by separately incorporating the required amount of TiO 2 into the composition. It is something. In this way, in the present invention, a predetermined proportion of
By configuring the ceramic dielectric material with BaTiO 3 , Co 2 O 3 , Nb 2 O 5 , CeO 2 , and TiO 2 and controlling the amount of SrO + CaO brought in from BaTiO 3 , the fired product according to the present invention can be produced. This made it possible to impart excellent electrical properties such as dielectric constant to the porcelain dielectric material. Examples will be given below to clarify the present invention more specifically, but it goes without saying that the present invention is not limited in any way by the description of these Examples. Note that all parts and percentages in the examples are expressed on a weight basis. Example The ingredients were wet-mixed uniformly in a ball mill so that the proportions shown in Table 1 were achieved, and then calcined at 900 to 1100°C for 3 hours to carry out a chemical reaction, and then mixed again. It was ground in a ball mill until the average particle size was about 1 micron. In addition,
High purity BaTiO with SrO to form three components
BaCO 3 with a purity of 99.0% or more and TiO 2 with a purity of 99.9% having different total CaO contents were used and were wet mixed in the ball mill with other components. Next, after drying this mixture, an appropriate amount of polyvinyl alcohol was added as a binder to give a
Molded at a pressure of ton/ cm2 , diameter 16m/m, thickness
A 0.5 m/m disc-shaped molded product was produced. Furthermore, for the molded product thus obtained, approximately
After performing the main firing operation at a temperature of 1350 to 1400°C for 3 hours, silver electrodes were baked on both sides of the obtained fired product to make it into a sample.
After carrying out a life test in which 10 KV was applied per 1 mm of the sample for 3000 hours, the various electrical characteristics of each sample were measured and the results are shown in Table 2. As is clear from the results in Tables 1 and 2,
The composition according to the present invention, i.e. (a) in each sample no.
and (b) both have a high dielectric constant (ε) of 3000 or more, a small dielectric loss (tan δ), and also have the characteristics of a small rate of change in dielectric constant with respect to temperature. There is. On the other hand, BaTiO 3 , Co 2 O 3 , Nb 2 O 5 ,
Even if the contents of CeO 2 and TiO 2 are similar, SrO+
In cases (c) and (d) where the total CaO content exceeds 0.5%, the dielectric constant (ε) is significantly inferior to cases (a) and (b) according to the present invention. It was hot.
【表】【table】
【表】【table】
【表】【table】
Claims (1)
含有量が0.5重量％以下である高純度のチタン酸
バリウム95〜99重量％と、酸化コバルト0.05〜
0.5重量％と、酸化ニオブ0.5〜２重量％と、酸化
セリウム0.05〜0.5重量％と、酸化チタンの1.5重
量％までとからなる高誘電率系磁器誘電体組成
物。1 Highly purified barium titanate 95-99% by weight with a total content of strontium oxide and calcium oxide of 0.5% by weight or less, and cobalt oxide 0.05-99% by weight
0.5% by weight of niobium oxide, 0.5-2% by weight of niobium oxide, 0.05-0.5% by weight of cerium oxide, and up to 1.5% by weight of titanium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56109592A JPS5815078A (en) | 1981-07-14 | 1981-07-14 | High dielectric constant ceramic dielectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56109592A JPS5815078A (en) | 1981-07-14 | 1981-07-14 | High dielectric constant ceramic dielectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5815078A JPS5815078A (en) | 1983-01-28 |
| JPS6351992B2 true JPS6351992B2 (en) | 1988-10-17 |
Family
ID=14514166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56109592A Granted JPS5815078A (en) | 1981-07-14 | 1981-07-14 | High dielectric constant ceramic dielectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5815078A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61275164A (en) * | 1985-05-03 | 1986-12-05 | タム セラミツクス インコ−ポレイテツド | Dielectric ceramic composition having high permittivity and flat tc properties |
| DE3775855D1 (en) * | 1986-08-11 | 1992-02-20 | Tdk Corp | CERAMIC SEMICONDUCTOR COMPOSITION. |
| US4939108A (en) * | 1986-11-03 | 1990-07-03 | Tam Ceramics, Inc. | Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics |
| KR940008696B1 (en) * | 1991-12-28 | 1994-09-24 | 삼성전기 주식회사 | High dielectric constant magnetic composition |
| US5550092A (en) * | 1995-02-10 | 1996-08-27 | Tam Ceramics Inc. | Ceramic dielectrics compositions |
-
1981
- 1981-07-14 JP JP56109592A patent/JPS5815078A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5815078A (en) | 1983-01-28 |
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