JPS6355686B2 - - Google Patents
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- Publication number
- JPS6355686B2 JPS6355686B2 JP55034567A JP3456780A JPS6355686B2 JP S6355686 B2 JPS6355686 B2 JP S6355686B2 JP 55034567 A JP55034567 A JP 55034567A JP 3456780 A JP3456780 A JP 3456780A JP S6355686 B2 JPS6355686 B2 JP S6355686B2
- Authority
- JP
- Japan
- Prior art keywords
- display element
- film
- material layer
- dielectric layer
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000007733 ion plating Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 29
- 238000004040 coloring Methods 0.000 description 14
- 229920006395 saturated elastomer Polymers 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 4
- 230000032683 aging Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004042 decolorization Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1524—Transition metal compounds
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Description
【発明の詳細な説明】
本発明は、電気化学的発消色現象すなわち、エ
レクトロクロミツク(以下ECと略記)現象を応
用した表示素子に関し、さらに詳しくは、薄膜の
積層体から成る全固体型EC表示素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a display element that applies an electrochemical coloring/decoloring phenomenon, that is, an electrochromic (hereinafter abbreviated as EC) phenomenon. Regarding EC display elements.
以下にまず、全固体型EC表示素子の従来構造
について第1図を用いて説明する。透明基板1上
に透明導電膜2を形成し、その上にEC物質層3
および誘電体層4を順次積層する。EC物質層3
としては三酸化タングステンWo3、三酸化モリブ
デンMoO3などの遷移金属酸化物が主に用いら
れ、通常、真空蒸着法あるいはスパツタリング法
などによつて、基板温度、膜形成レートおよび
O2ガス、N2ガスなどのガス圧をパラメーターと
して形成される。誘電体層4としては酸化第二ク
ロムCr2O3、五酸化タンタルTa2O5、に代表され
る酸化物およびフツ化リチウムLiF、フツ化バリ
ウムBaF2に代表されるフツ化物などが、EC物質
層形成法と同様な手法にて形成されている。最後
に上部電極5として反射型の場合には、バツクグ
ランドとしての効果を有するように処理された金
属が、透過型の場合には、主に透明導電膜が形成
される。以上のようにして構成された表示素子
は、下部透明導電膜と上部電極間に電圧を印加す
ることにより両電極間に挾持されたEC物質層が
電気化学的に着一消色現象を示し情報を提供し得
る。 First, the conventional structure of an all-solid-state EC display element will be described below with reference to FIG. A transparent conductive film 2 is formed on a transparent substrate 1, and an EC material layer 3 is formed on it.
and dielectric layer 4 are sequentially laminated. EC material layer 3
Transition metal oxides such as tungsten trioxide (Wo 3 ) and molybdenum trioxide (MoO 3 ) are mainly used, and are usually controlled by controlling the substrate temperature, film formation rate, etc. by vacuum evaporation or sputtering.
It is formed using gas pressure such as O 2 gas or N 2 gas as a parameter. For the dielectric layer 4, oxides such as chromic oxide Cr 2 O 3 and tantalum pentoxide Ta 2 O 5 and fluorides such as lithium fluoride LiF and barium fluoride BaF 2 are used. It is formed using a method similar to the material layer forming method. Finally, when the upper electrode 5 is a reflective type, a metal treated to have a background effect is formed, and when the upper electrode 5 is a transmissive type, a transparent conductive film is mainly formed. In the display element constructed as described above, when a voltage is applied between the lower transparent conductive film and the upper electrode, the EC material layer sandwiched between the two electrodes electrochemically colors and discolors, thereby providing information. can be provided.
このような構成を有するEC表示素子の着一消
色機構についてはいまだ不明な点が多いが、EC
物質層側にマイナス電圧が印加されると、誘電体
層中のカチオン種、ここでは主プロトンH+がEC
物質層中へ移動しブロンズを形成するために着色
反応が呈示されると解釈されている。又、ここに
言うプロトンとは通常誘電体層中に弱い結合で存
在しており、着色電圧印加時にはかなり自由に動
き回れる性格のものでなければならず、通常は
H2Oの形で層中に存在しているものと考えられ
ている。これより、電圧印加時の光学的濃度変化
の大きい表示素子、すなわち、着色効率の良い表
示素子を作成するには、上記のような状態の
H2Oをいかに安定に多量に層中に保持し得るか
という事が大きな課題となつてくる。上記の問題
点において従来構造EC表示素子は、非常に不満
足なものであり、通常の形成法においては層中に
安定に多量のH2Oを含有することは不可能であ
り、そのために着色効率の悪さ、およびエージン
グ時の光学的濃度変化の低下など表示素子として
は非常に大きな欠点を有していた。 Although there are still many unknowns about the coloring and fading mechanism of EC display elements with such a configuration, EC
When a negative voltage is applied to the material layer side, the cation species in the dielectric layer, here the main proton H +
It is interpreted that a colored reaction is exhibited due to migration into the material layer and formation of bronze. In addition, the protons mentioned here usually exist in a dielectric layer with weak bonds, and must be able to move around quite freely when a coloring voltage is applied;
It is thought to exist in the layer in the form of H 2 O. From this, in order to create a display element with a large change in optical density when voltage is applied, that is, a display element with good coloring efficiency, it is necessary to
A major issue is how to stably retain a large amount of H 2 O in the layer. Conventional structure EC display elements are extremely unsatisfactory in terms of the above-mentioned problems, and it is impossible to stably contain a large amount of H 2 O in the layer using normal forming methods, resulting in poor coloring efficiency. It had very large drawbacks as a display element, such as poor performance and a decrease in optical density change during aging.
本発明は従来構造EC表示素子のかかる欠点を
解決し、層中に安定に多量のH2Oを含有し得る
形成法を採用することにより、着色効率の良い長
期安定したEC表示素子を提供することを目的と
するものである。以下に本発明によるEC表示素
子について述べる。表示素子を構成するどの層に
おいても本発明による効果は明らかであるが、先
のEC着色機構に対する解釈から最も効果が大き
いと思われる誘電体層を例にとつて述べる。基板
上に透明導電膜、EC物質層を形成した後、誘電
体層として例えば、酸化第二クロムCr2O3を基板
温度、膜形成レート、膜厚などをパラメーターと
して形成する。本発明によれば、この時1×
10-3Torr程度までH2O飽和蒸気を導入し、その
中で膜形成することにより膜中H2O量が増加す
ることが知られており、その時のIR吸収スペク
トルによる3650cm-1および1600cm-1付近でのH2O
吸収ピークの様子を第2図に示す。図中Aは通常
の真空蒸着法により形成した膜、Bは本発明によ
るH2O飽和蒸気導入により形成した膜であり、
両者の比較から明らかなように、本発明による誘
電体層中には多量のH2Oが存在しており、同様
のことは示差熱分析の結果からも確認されてい
る。膜形成時のH2O飽和蒸気導入の効果はEC物
質層においても認められ、例としてWO3膜のIR
吸収スペクトルを第3図に示す。先と同様に図中
Aは、通常の真空蒸着法により得られる膜、Bは
本発明により得られる膜である。上記のような特
性を有するEC物質層、誘電体層を使用して作成
されるEC表示素子は、その中に着、消色に関与
する多量のH2Oを保持しているため、従来構造
の表示素子と比較して着色効率が大きく改善さ
れ、その様子を第4図に示す。この場合の表示素
子構造は、EC物質層としてWO3膜を、誘電体層
としてCr2O3膜を、上部電極としてはAu薄膜を
積層に形成したものであり、は従来のEC表示
素子、は本発明によるEC表示素子に対する特
性である。図中I0は入射光強度、Iは透過光強度
を表わし検出は視感度補正を施したシリコンデイ
テクターを使用している。図より明らかなよう
に、本発明によるEC表示素子は注入電荷量に対
する光学的濃度変化、すなわち着色効率が改善さ
れ、同一注入電荷量に対して大きな光学的濃度変
化を得ることが出来る。又、エージング特性にお
いても光学的濃度変化の劣化は従来のEC表示素
子と比較して充分に小さく、表示素子中に保持さ
れたH2OがEC機構に有効に作用していることが
わかる。 The present invention solves these drawbacks of conventionally structured EC display elements and provides a long-term stable EC display element with good coloring efficiency by adopting a formation method that can stably contain a large amount of H 2 O in the layer. The purpose is to The EC display element according to the present invention will be described below. Although the effects of the present invention are obvious in any layer constituting a display element, the dielectric layer, which is considered to have the greatest effect from the above interpretation of the EC coloring mechanism, will be described as an example. After forming a transparent conductive film and an EC material layer on a substrate, a dielectric layer of, for example, chromic oxide Cr 2 O 3 is formed using parameters such as substrate temperature, film formation rate, and film thickness. According to the present invention, at this time 1×
It is known that the amount of H 2 O in the film increases by introducing H 2 O saturated vapor up to about 10 -3 Torr and forming a film therein. H2O near -1
Figure 2 shows the absorption peak. In the figure, A is a film formed by a normal vacuum evaporation method, B is a film formed by introducing H 2 O saturated steam according to the present invention,
As is clear from the comparison between the two, a large amount of H 2 O is present in the dielectric layer according to the present invention, and the same fact has been confirmed from the results of differential thermal analysis. The effect of introducing H 2 O saturated steam during film formation is also observed in the EC material layer; for example, the IR of WO 3 film
The absorption spectrum is shown in FIG. As before, in the figure, A is a film obtained by the usual vacuum deposition method, and B is a film obtained by the present invention. EC display elements created using EC material layers and dielectric layers with the above characteristics retain a large amount of H 2 O, which is involved in deposition and decolorization, and therefore do not have conventional structures. The coloring efficiency is greatly improved compared to the display element shown in FIG. 4. The display element structure in this case is a stacked structure of a WO 3 film as the EC material layer, a Cr 2 O 3 film as the dielectric layer, and an Au thin film as the upper electrode. are the characteristics for the EC display element according to the present invention. In the figure, I 0 represents the incident light intensity, and I represents the transmitted light intensity, and a silicon detector with visibility correction is used for detection. As is clear from the figure, the EC display element according to the present invention has improved optical density change with respect to the amount of injected charge, that is, coloring efficiency, and can obtain a large optical density change with respect to the same amount of injected charge. Furthermore, in terms of aging characteristics, the deterioration in optical density change is sufficiently small compared to conventional EC display elements, indicating that H 2 O retained in the display element effectively acts on the EC mechanism.
本発明によるH2O飽和蒸気導入による膜中
H2O量増加は膜形成時の膜中へのH2O取り込み
によるものと考えられるが、さらに、膜構造を考
慮することにより膜中H2O量の一層の増加が期
待される。このような観点からイオンプレーテイ
ング(以下IPと略す)法を検討し、ある条件範
囲で微細結晶粒子を持ち柱状組織に近い成長をす
る領域を見い出した。このような膜構造は、通常
の真空蒸着法などでは得難いものであり、逆に
EC表示素子用としては最も好ましい構造であり、
先のH2O飽和蒸気導入と兼用することにより膜
中に存在するH2O量をさらに増加させることが
可能となる。例として、誘電体層をH2O飽和蒸
気導入とIP法を兼用した条件下で形成した時の
IR吸収スペクトルを第5図に示す。先の第2図
Bと比較して膜構造を考慮することにより膜中
H2O量がさらに増加することがわかり、同様に
EC物質層についても効果が認められている。さ
らに、IP法採用により上記構造をとることによ
り、従来EC表示素子において問題とされていた
エージング時のパターン外への着色にじみ、着色
残りなどの現象が見られなくなり、このことは
IP膜構造のもつ効果と考えられ、表示素子とし
ての外観上、非常に大きなメリツトである。
H2O飽和蒸気導入とIP法を併用して得られるEC
物質層、誘電体層を使用して作成されるEC表示
素子の着色効率について、第6図に示す。図中
は第4図のと同じ曲線であり、はH2O飽和
蒸気導入とIP法併用で得られる表示素子特性で
ある。図からIP法を採用することにより、注入
電荷量と光学的濃度変化の比例部分が高い光学的
濃度変化領域まで伸びており一層の着色効率の改
善が見られる。この事はIP法採用による薄膜中
H2O増加分がEC着色機構に有効に関与している
ことを表わしており、充分に実用に耐え得る表示
素子持性を示している。 Into the membrane by introducing H 2 O saturated steam according to the present invention
The increase in the amount of H 2 O is considered to be due to the incorporation of H 2 O into the film during film formation, but further increase in the amount of H 2 O in the film is expected by considering the film structure. From this perspective, we investigated the ion plating (hereinafter abbreviated as IP) method and found a region that has fine crystal grains and grows close to a columnar structure under a certain range of conditions. This kind of film structure is difficult to obtain using ordinary vacuum evaporation methods;
This is the most preferable structure for EC display elements,
By combining this with the aforementioned introduction of H 2 O saturated steam, it becomes possible to further increase the amount of H 2 O present in the film. As an example, when a dielectric layer is formed under conditions that combine H 2 O saturated vapor introduction and IP method,
The IR absorption spectrum is shown in Figure 5. By considering the membrane structure compared to the previous figure 2B,
It can be seen that the amount of H 2 O increases further, and similarly
Effects have also been recognized for the EC material layer. Furthermore, by adopting the IP method and adopting the above structure, phenomena such as color bleeding outside the pattern and coloring residue during aging, which were problems with conventional EC display elements, can no longer be observed.
This is thought to be an effect of the IP film structure, and is a very large advantage in terms of appearance as a display element.
EC obtained by combining H 2 O saturated steam introduction and IP method
Figure 6 shows the coloring efficiency of an EC display element created using a material layer and a dielectric layer. The figure shows the same curve as in FIG. 4, and is the display element characteristic obtained by the combined use of H 2 O saturated vapor introduction and the IP method. As can be seen from the figure, by adopting the IP method, the proportional part between the amount of injected charge and the optical density change extends to the region of high optical density change, and further improvement in coloring efficiency can be seen. This is due to the fact that the IP method is used in thin films.
This indicates that the increased amount of H 2 O is effectively involved in the EC coloring mechanism, indicating that the display element has sufficient durability for practical use.
以上述べてきたように本発明によれば、従来構
造のEC表示素子が有していた、着色効率の悪さ、
およびエージング持性の低下などの欠点を解決
し、光学的濃度変化の大きい、着色にじみのな
い、長期安定した実用域のEC表示素子を提供出
来る。 As described above, according to the present invention, the poor coloring efficiency that the EC display element of the conventional structure had,
It is possible to solve the drawbacks such as low aging and aging properties, and provide a practical EC display element that has a large optical density change, no color bleeding, and is stable over a long period of time.
以上は誘電体層、EC物質層について述べたも
のであるが、透明導電膜についても水蒸気を含む
雰囲気中で蒸着することにより水分を包含させる
ことが可能であり、同様の効果が得られる。 Although the above description has been made regarding the dielectric layer and the EC material layer, the transparent conductive film can also contain moisture by being deposited in an atmosphere containing water vapor, and the same effect can be obtained.
第1図は、従来の全固体型EC表示素子構造を
示す断面図、第2図A,B、第3図A,Bは、そ
れぞれH2O飽和蒸気導入下で得られるCr2O3膜、
WO3膜のIR吸収スペクトル線図、第4図は従来
の表示素子のH2O飽和蒸気導入下で得られる表
示素子の注入電荷量、光学的濃度変化の特性図、
第5図はH2O飽和蒸気導入とIP法兼用で得られ
るCr2O3膜のIR吸収スペクトル線図、第6図は、
H2O飽和蒸気導入下で得られる表示素子とH2O
飽和蒸気導入とIP法兼用で得られる表示素子の
注入電荷量、光学的濃度変化の特性図である。
2……透明導電膜、3……EC物質層、4……
誘電体層、5……上部電極。
Figure 1 is a cross-sectional view showing the structure of a conventional all-solid-state EC display element, Figures 2A and B, and Figures 3A and B are Cr 2 O 3 films obtained under the introduction of H 2 O saturated steam, respectively. ,
IR absorption spectrum diagram of WO 3 film, Figure 4 is a characteristic diagram of the amount of charge injected into a display element obtained under the introduction of H 2 O saturated vapor of a conventional display element, and changes in optical density.
Figure 5 is an IR absorption spectrum diagram of a Cr 2 O 3 film obtained by both the introduction of H 2 O saturated steam and the IP method, and Figure 6 is
Display element and H 2 O obtained under introduction of H 2 O saturated steam
FIG. 2 is a characteristic diagram of the amount of charge injected into a display element and the change in optical density obtained by both the introduction of saturated steam and the IP method. 2...Transparent conductive film, 3...EC material layer, 4...
Dielectric layer, 5...upper electrode.
Claims (1)
トロクロミツク物質層3、誘電体層4などの膜あ
るいは層を積層させて成る全固体型エレクトロク
ロミツク表示素子において、前記2,3,4など
の膜あるいは層の内の少なくとも一つが水蒸気を
含む雰囲気中でフイジカルベーパーデイポジシヨ
ン法により形成されたものであることを特徴とす
る全固体型エレクトロクロミツク表示素子。 2 フイジカルベーパーデイポジシヨン法がイオ
ンプレーテイング法であることを特徴とする特許
請求の範囲第1項記載の全固体型エレクトロクロ
ミツク表示素子。[Scope of Claims] 1. An all-solid-state electrochromic display element formed by laminating films or layers such as a transparent conductive film 2, a tungsten trioxide-based electrochromic material layer 3, and a dielectric layer 4, wherein the above-mentioned 2. An all-solid-state electrochromic display element, characterized in that at least one of the films or layers described in items 3 and 4 is formed by a physical vapor deposition method in an atmosphere containing water vapor. 2. The all-solid-state electrochromic display element according to claim 1, wherein the physical vapor deposition method is an ion plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3456780A JPS56130723A (en) | 1980-03-18 | 1980-03-18 | Entirely solid electrochromic display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3456780A JPS56130723A (en) | 1980-03-18 | 1980-03-18 | Entirely solid electrochromic display element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56130723A JPS56130723A (en) | 1981-10-13 |
| JPS6355686B2 true JPS6355686B2 (en) | 1988-11-04 |
Family
ID=12417891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3456780A Granted JPS56130723A (en) | 1980-03-18 | 1980-03-18 | Entirely solid electrochromic display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56130723A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57139721A (en) * | 1981-02-25 | 1982-08-28 | Toppan Printing Co Ltd | Electrochromic display body |
| US5777779A (en) * | 1995-09-29 | 1998-07-07 | Canon Kabushiki Kaisha | Electrochromic device and method for manufacturing the same |
-
1980
- 1980-03-18 JP JP3456780A patent/JPS56130723A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56130723A (en) | 1981-10-13 |
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