JPS6362135A - Fluorescent display board and its manufacturing method - Google Patents
Fluorescent display board and its manufacturing methodInfo
- Publication number
- JPS6362135A JPS6362135A JP61228981A JP22898186A JPS6362135A JP S6362135 A JPS6362135 A JP S6362135A JP 61228981 A JP61228981 A JP 61228981A JP 22898186 A JP22898186 A JP 22898186A JP S6362135 A JPS6362135 A JP S6362135A
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- Prior art keywords
- phosphor
- interface
- thin film
- light
- rough
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Luminescent Compositions (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ディスプレイ装置や光源等に用いられる螢光
体表示板及びその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a phosphor display plate used in display devices, light sources, etc., and a method for manufacturing the same.
従来の技術
第2図に従来、ブラウン管等に実施されている螢光体表
示板の一部断面図を示す。10はガラス基板であってそ
の表面に電子ビームの衝突によって発光する螢光体粉末
層11が塗着されており、その表面に薄いアルミニウム
膜12が設けられている。螢光体粉末層は通常2〜3粒
子層である。BACKGROUND OF THE INVENTION FIG. 2 is a partial sectional view of a phosphor display panel conventionally used in cathode ray tubes and the like. Reference numeral 10 denotes a glass substrate, on the surface of which is coated a phosphor powder layer 11 that emits light upon collision with an electron beam, and on the surface of which a thin aluminum film 12 is provided. The phosphor powder layer is usually 2-3 particle layers.
また、螢光体表示管等に用いられる螢光体表示板に2い
ては、ガラス基板の表面に電気伝導層を設け、更にその
表面に螢光体粉末層が設けられている。螢光体粉末は結
晶体であって形状も種々あるが、ガラス基板とは結晶体
の一部が点接触するような状態で塗着されている。Further, in a phosphor display plate used in a phosphor display tube or the like, an electrically conductive layer is provided on the surface of a glass substrate, and a phosphor powder layer is further provided on the surface. The phosphor powder is a crystalline substance and comes in various shapes, but it is applied to the glass substrate in such a way that a part of the crystalline substance is in point contact with the glass substrate.
上記従来例は、いずれもガラス基板表面に螢光体粉末を
塗着したものであって、ガラス基板と螢光体粉末とは点
接触であって熱伝導が極めて悪い。In all of the above conventional examples, phosphor powder is applied to the surface of a glass substrate, and the glass substrate and phosphor powder are in point contact, resulting in extremely poor heat conduction.
従って、電子ビームのエネルギー密度を上げて、発光温
度を上げようとすると、螢光体の温度が上昇し、所謂温
度消光により発光効率が低下し、発光輝度に限界を生じ
る。例えば、テレビ用螢光体のZnS : Agは10
0℃で発光効率は室温時に比べて約%に低下してしまう
。また、螢光表示管等に用いられるZn○についても、
100℃での発光効率は室温時の約%である。通常のC
RT等の電子ビームのパワー密度は数mW/ci程度で
あり、あまり温度上昇の問題はないが、プロジェクショ
ン管等ておいては、それは数W/crA 程度となり、
螢光体の温度上昇による深刻な発光効率の減少を招いて
しまう。また低速電子線励起螢光体(ZnO:Zn)を
用いた電子写真式光プリンタ用の線光源装置では、非常
に高輝度が要求されるため、電子ビームのパワー密度は
数十W/cl程度にもなり、同様の問題がおこっていた
。Therefore, if an attempt is made to increase the energy density of the electron beam to raise the emission temperature, the temperature of the phosphor increases, and the emission efficiency decreases due to so-called temperature quenching, resulting in a limit to the emission brightness. For example, ZnS of TV phosphor: Ag is 10
At 0° C., the luminous efficiency decreases to about % compared to room temperature. Also, regarding Zn○ used in fluorescent display tubes etc.
The luminous efficiency at 100° C. is about % of that at room temperature. normal C
The power density of an electron beam such as RT is about several mW/ci, so there is no problem of temperature rise, but for projection tubes etc., the power density is about several W/crA.
This results in a serious decrease in luminous efficiency due to an increase in the temperature of the phosphor. Furthermore, line light source devices for electrophotographic optical printers using low-speed electron beam excited phosphors (ZnO:Zn) require extremely high brightness, so the power density of the electron beam is on the order of several tens of W/cl. , and a similar problem occurred.
そこで、電子ビーム照射による温度上昇を回避する一つ
の手段として、基板ガラス上に薄膜螢光体を形成する方
法が試みられてきた。薄膜螢光体を形成することで、従
来の粉末層の状態の螢光体に比べて基板ガラスとの熱伝
導が極めて良く、上記温度消光の問題を回避することが
できる。Therefore, as a means to avoid the temperature increase caused by electron beam irradiation, attempts have been made to form a thin film phosphor on a glass substrate. By forming a thin film phosphor, thermal conductivity with the substrate glass is extremely good compared to conventional phosphors in the form of a powder layer, and the above-mentioned problem of temperature quenching can be avoided.
発明が解決しようとする問題点
ところが、螢光体を薄膜化することにより、光の取り出
し効率が著しく低下してしまう問題があった。第3図に
螢光体が粉末層の場合aと薄膜の場合b、それぞれの光
の取り出される様子を示した模式図を示す。Problems to be Solved by the Invention However, by making the phosphor a thin film, there is a problem in that the light extraction efficiency is significantly reduced. FIG. 3 is a schematic diagram showing how light is extracted when the phosphor is a powder layer (a) and when the phosphor is a thin film (b).
まずaの場合については、第3図の例では螢光体粉末層
21とガラス基板22は全く接触していない場合が示し
である。この場合、真空20側から照射された電子ビー
ムにより螢光体が発光し、発光点23から発せられた光
は全立体角方向に発散していくが、例えば光跡A(24
)のように真空20とガラス基板22との界面a(27
)に達した光は全て全反射することなくガラス基板内に
進入し、また界面すを介して大気25側へ透過する。し
だがって、界面a’ 、 bでの反射成分を無視すれば
、元は100係、大気26又は真空20側へ放出される
。実際には、螢光体粒子とガラス基板22とは、ガラス
基板22の表面積の20−30%の部分で光学的に接触
している。そこを介してガラス基板22内に進入した光
の内、ガラス基板22の相接率nqと大気26の屈折率
na=1の比できい角度の光線については界面すで全反
射されてしまう。しかし、それも幾度か、螢光体粒子が
接触している界面aと、界面すの間で反射を繰り返すう
ちに徐々に散乱されて外部へ放出されていく。First, regarding case a, the example in FIG. 3 shows a case where the phosphor powder layer 21 and the glass substrate 22 are not in contact at all. In this case, the phosphor emits light from the electron beam irradiated from the vacuum 20 side, and the light emitted from the light emitting point 23 diverges in all solid angle directions.
), the interface a (27) between the vacuum 20 and the glass substrate 22
) All of the light that reaches the glass substrate enters the glass substrate without being totally reflected, and is transmitted to the atmosphere 25 through the interface. Therefore, if the reflected components at the interfaces a' and b are ignored, the original light is emitted to the atmosphere 26 or vacuum 20 by a factor of 100. In reality, the phosphor particles and the glass substrate 22 are in optical contact over 20-30% of the surface area of the glass substrate 22. Of the light that has entered the glass substrate 22 through this, light rays at an angle that is too large for the ratio of the contact ratio nq of the glass substrate 22 to the refractive index na of the atmosphere 26 = 1 are already totally reflected at the interface. However, as the light is reflected several times between the interface a and the interface where the phosphor particles are in contact, it is gradually scattered and emitted to the outside.
ところが、bの場合のように平滑な基板上へ平滑な薄膜
螢光体26が形成された場合、発光点32から放射状に
発散された光の内、薄膜螢光体26の屈折率npと真空
20の屈折率nv=1の比で決い角度の光線は全て、界
面Cと界面dもしくは界面eで全反射して、薄膜螢光体
26又はガラス基板22内にとじ込められてしまう。第
3図すにおいて、θ 同様、θ3.θ4はそれぞれ界面
d、eでの臨界角、θ2は界面eで臨界角をなす光線が
薄膜螢光体26内で鉛直軸となす角で、θ2=θ1であ
る。33.34は全反射して界面Cと界面dもしくは界
面eの間にとじこめられた光跡の一例である。散乱が全
く無いと仮定すれば、光の取出し効率はZn○の場合で
わずか13係、ZnSに致っては9%で、残りは端部側
縁にまで到達する。実際には、基板ガラス表面及び薄膜
螢光体表面の微少な凹凸等による散乱があり、例えばZ
nSのスパッタ膜の場合、光の取り出し効率は約25%
程度である。However, when a smooth thin film phosphor 26 is formed on a smooth substrate as in case b, among the light radially diverged from the light emitting point 32, the refractive index np of the thin film phosphor 26 and the vacuum All the light rays having an angle determined by the ratio of the refractive index nv=1 of 20 are totally reflected at the interface C and interface d or interface e, and are confined within the thin film phosphor 26 or the glass substrate 22. In Figure 3, θ3. θ4 is the critical angle at the interfaces d and e, respectively, θ2 is the angle that the light beam making the critical angle at the interface e makes with the vertical axis in the thin film phosphor 26, and θ2=θ1. 33 and 34 are examples of light trails that are totally reflected and confined between interface C and interface d or interface e. Assuming that there is no scattering, the light extraction efficiency is only 13% in the case of Zn○, 9% in the case of ZnS, and the remainder reaches the side edges of the ends. In reality, scattering occurs due to minute irregularities on the surface of the substrate glass and the surface of the thin film phosphor.
In the case of nS sputtered film, the light extraction efficiency is approximately 25%.
That's about it.
以上の様に、螢光体を薄膜化することで、光の取り出し
効率が大幅に減少する問題があった。As described above, by making the phosphor thin, there is a problem in that the light extraction efficiency is significantly reduced.
問題点を解決するための手段
本発明は、粗い基板表面を設け、その上にできるだけ表
面に凹凸ができる様に、螢光体の結晶粒の集合体から成
る薄膜螢光体が形成されている構造にする。Means for Solving the Problems In the present invention, a rough substrate surface is provided, and a thin film phosphor made of an aggregate of phosphor crystal grains is formed on the rough substrate surface so that the surface is as uneven as possible. Make it a structure.
作 用
螢光体内で発生した光は、粗い基板・薄膜螢光体界面及
び凹凸のついた薄膜螢光体表面で散乱されて、基板内も
しくは薄膜螢光体内にとじ込められることなく、外部に
放出される。したがって螢光体粉末層に匹敵する光の取
り出し効率を得ることができる。The light generated within the working phosphor is scattered by the rough substrate/thin-film phosphor interface and the uneven surface of the thin-film phosphor, and is emitted to the outside without being trapped within the substrate or the thin-film phosphor. released. Therefore, a light extraction efficiency comparable to that of a phosphor powder layer can be obtained.
実施例
第1図に本発明の一実施例における螢光体表示板の断面
図を示す。石英ガラス製のガラス基板1の上に薄膜螢光
体3が形成されている。ガラス基板1を薄膜螢光体3の
界面q(7)は、図の様に粗い凹凸が形成され、その上
にその面に応じた角度で螢光体結晶粒2が成長し、全面
を密に覆いつくして薄膜螢光体3が形成している。界面
qの面粗さは数μm〜数十μmである。本実施例の螢光
体は、六方晶系に属するZn○ であり、各々の螢光体
結晶粒2は、粒径、高さが数μmの柱状の結晶である。Embodiment FIG. 1 shows a sectional view of a phosphor display plate according to an embodiment of the present invention. A thin film phosphor 3 is formed on a glass substrate 1 made of quartz glass. At the interface q(7) between the glass substrate 1 and the thin film phosphor 3, rough unevenness is formed as shown in the figure, and phosphor crystal grains 2 grow on the surface at an angle corresponding to the surface, making the entire surface dense. A thin film phosphor 3 is formed completely covering the area. The surface roughness of the interface q is from several μm to several tens of μm. The phosphor of this example is Zn○ belonging to a hexagonal crystal system, and each phosphor crystal grain 2 is a columnar crystal with a grain size and height of several μm.
粗い界面qを反映して、螢光体結晶粒2相互の配向度は
低く、薄膜螢光体3表面(界面p(6))は粗い凹凸が
形成されている。Reflecting the rough interface q, the mutual orientation of the phosphor crystal grains 2 is low, and rough irregularities are formed on the surface of the thin film phosphor 3 (interface p(6)).
以上の様な構成の螢光体表示板において、真空4側から
照射された電子ビームにより薄膜螢光体内部で発光した
光は照射状に発散し、その一部はガラス基板1内に進入
する。そのうち、臨界角弁して大気6側へ放出されるが
、臨界角θ。よりも深い角度で進入した光は界面rで全
反射され再び界面q側へ到達する。ところが、本構成で
は、界面p及びqは細かい粗面になっているため、光線
が界面rと界面pもしくはqの間で反射を繰り返すうち
に徐々に散乱されて外部へ放出されていく。即ち、光跡
は通常の粉末層の螢光体表示板同様である。光は膜内に
とじ込められることなく、全て真空4もしくは大気5側
へ放出される。In the phosphor display panel having the above configuration, the light emitted inside the thin film phosphor by the electron beam irradiated from the vacuum 4 side is irradiated and a part of it enters the glass substrate 1. . Among them, the critical angle valve is released into the atmosphere 6, but the critical angle is θ. The light that enters at a deeper angle is totally reflected at the interface r and reaches the interface q side again. However, in this configuration, since the interfaces p and q are finely rough surfaces, as the light rays are repeatedly reflected between the interface r and the interface p or q, they are gradually scattered and emitted to the outside. That is, the light trail is similar to that of a conventional powder layer phosphor display panel. All light is emitted to the vacuum 4 or atmosphere 5 side without being confined within the film.
基板を粗面化することの作用は、まず第1に、界面qで
の光の散乱を促すことと共に、第2には、後述する様な
最適な製膜方法とにより、その土に成長する薄膜螢光体
の各結晶粒の配向度を低下させ、螢光体自体の結晶性を
そこなうことなく容易に薄膜螢光体表面(界面p)を粗
面化し、この面でも光が散乱し易くなる様にすることに
ある。したがって、粗面化した基板表面の効果を最大限
に薄膜螢光体表面の粗面化に反映するには、その膜厚は
、あまり厚くないほうが良く、だいだい基板表面の最大
面粗さよりも薄い程度にとどめておくことが効果的であ
る。The effect of roughening the surface of the substrate is, firstly, to promote the scattering of light at the interface q, and secondly, by using the optimal film forming method as described below, the effect of roughening the surface of the substrate is to promote the scattering of light at the interface q. By lowering the degree of orientation of each crystal grain of the thin film phosphor, the surface of the thin film phosphor (interface p) can be easily roughened without damaging the crystallinity of the phosphor itself, and light is easily scattered on this surface as well. It is about making it happen. Therefore, in order to maximize the effect of the roughened substrate surface on the roughening of the thin film phosphor surface, the film thickness should not be too thick, and is generally thinner than the maximum surface roughness of the substrate surface. It is effective to keep it to a certain extent.
次に本発明の一実施例における螢光体表示板の製造方法
について述べる。まず石英ガラス基板10表面を、サン
ドブラスト又は#1o○〜#1α℃程変のサンドペーパ
ー等を用いて、所定の面粗さに粗面化する。面粗さとし
て(佳数μm〜数十μmが望ましい。その上に、螢光体
薄膜を成長させる。Next, a method for manufacturing a phosphor display plate according to an embodiment of the present invention will be described. First, the surface of the quartz glass substrate 10 is roughened to a predetermined surface roughness by using sandblasting or sandpaper with a temperature varying from #1°C to #1α°C. The surface roughness is preferably from a few μm to several tens of μm.A phosphor thin film is grown thereon.
透明導電層を必要とする場合は、まず、透明導電性薄膜
を2000人〜3000人蒸着してからその上に螢光体
薄膜を成長させる。透明導電膜の材料としては、A1等
の不純物を適量ドープして導電率を高めだ低抵抗ZnO
膜が適当である。If a transparent conductive layer is required, a transparent conductive thin film is first deposited by 2,000 to 3,000 layers, and then a phosphor thin film is grown thereon. The material for the transparent conductive film is low-resistance ZnO, which is doped with an appropriate amount of impurities such as A1 to increase the conductivity.
A membrane is suitable.
本実施例では、螢光体材料としては、Zn○:Zn螢元
体を用いた。製膜法としては、キャリアガスに水素を用
いる気相輸送法によった。減圧開管中で、キャリアガス
としてH2もしくは水中でバブルさせたwetH2を用
い、粗面化した石英ガラス基板上にZnO薄膜を成長さ
せた。ソースは、試薬ZnO粉末を円板状に焼結したも
のを用いた。In this example, Zn◯:Zn phosphor element was used as the phosphor material. The film forming method used was a gas phase transport method using hydrogen as a carrier gas. In a vacuum open tube, a ZnO thin film was grown on a roughened quartz glass substrate using H2 or wet H2 bubbled in water as a carrier gas. The source used was a disc-shaped sintered reagent ZnO powder.
基本的な化学反応は、
Zn0(固) + H2(気)二Zn(気)+H20(
気)である。即ち、高温(〜1Q00℃)のH2ガス中
でソースのZnOを還元してできたZnガスH20ガス
が輸送され低温(500℃〜800℃)の基板上でZn
ガスが再酸化されてZn○薄膜が成長する。The basic chemical reaction is Zn0 (solid) + H2 (air) Zn (air) + H20 (
is). That is, Zn gas H20 gas produced by reducing source ZnO in H2 gas at high temperature (~1Q00°C) is transported and Zn
The gas is reoxidized and a Zn○ thin film grows.
この際、スパッタ法等の物理的な蒸着法を用いると、薄
膜螢光体の表面は、下地の基板表面にそっだ均一な厚さ
の膜ができてしまい、即ち、界面pと界面qが平行面に
なってしまい、光の取り出し効率は十分には高められな
いが、本実施例の様な化学気相成長法を用い、適当な製
膜条件を選んでやれば、粒径、高さが数μmの柱状のZ
nO結晶粒を配向度低く、ち密に成長させることができ
る。At this time, if a physical vapor deposition method such as sputtering is used, the surface of the thin film phosphor will be a film with a uniform thickness that extends over the underlying substrate surface, that is, the interface p and the interface q will be Although the light extraction efficiency cannot be sufficiently increased because the planes are parallel, if the chemical vapor deposition method used in this example is used and appropriate film forming conditions are selected, the particle size and height can be reduced. Columnar Z with several μm
The nO crystal grains can be grown densely with a low degree of orientation.
ところで、たんに平滑な基板表面に同じ方法でZnO膜
を成長させても、配向度の高い膜ができ易く、界面pと
界面qが平行に近い部分の割合が高くなり、光の取り出
し効率が低下し七しまう。By the way, even if a ZnO film is simply grown on a smooth substrate surface using the same method, a film with a high degree of orientation is likely to be formed, and the proportion of areas where interface p and interface q are close to parallel increases, resulting in a decrease in light extraction efficiency. It decreases to seven.
基板表面を粗面化してやることと、あわせて本実施例の
ような化学気相成長法を用いて薄膜螢光体を成長させて
やれば、界面p、q共十分粗面の薄膜螢光体を確実且つ
再現性良く作製することができる。If the substrate surface is roughened and a thin film phosphor is grown using chemical vapor deposition as in this example, a thin film phosphor with sufficiently rough surfaces on both interfaces p and q can be obtained. can be produced reliably and with good reproducibility.
さらに・本実施例の気相輸送法に代表されるような、製
膜時に膜中に損傷を与えにくく結晶性のいい薄膜螢光体
を作成することのできる化学気相成長法を用いることに
より、螢光体の内部発光効率自体、通常の粉末状の螢光
体に匹敵する膜をつくることができる。Furthermore, by using a chemical vapor deposition method, as typified by the vapor phase transport method of this example, which can create a thin film phosphor with good crystallinity without causing damage to the film during film formation. , it is possible to create a film whose internal luminous efficiency of the phosphor itself is comparable to that of an ordinary powdered phosphor.
上記実施例において、内部発光効率が高く、しかも光取
り出し効率の高い薄膜螢光体の作製条件範囲はおおよそ
以下の様であった。即ち、ソースノZnOtD湿温度9
00℃〜11 oo℃、基板温度は550℃〜760℃
、特に660℃〜700℃程度が好ましい。ガス圧は5
Torr〜20Torr 、キャリアガスとしては50
〜600sccMのwetH2を用いる。導入キャリア
ガス中のH2o分圧は10〜10 Torrlj度が良
い。堆積時間は条件洗よって異るが、30分〜2時間程
度である。ソース温度10QO℃、基板温度700℃、
ガス圧8 Torr 。In the above examples, the range of conditions for producing a thin film phosphor with high internal luminous efficiency and high light extraction efficiency was approximately as follows. That is, Sono ZnOtD humidity temperature 9
00℃~11oo℃, substrate temperature 550℃~760℃
, particularly preferably about 660°C to 700°C. Gas pressure is 5
Torr ~ 20 Torr, 50 Torr as carrier gas
~600 sccM of wet H2 is used. The H2o partial pressure in the introduced carrier gas is preferably 10 to 10 Torrlj degrees. The deposition time varies depending on the washing conditions, but is about 30 minutes to 2 hours. Source temperature 10QO℃, substrate temperature 700℃,
Gas pressure 8 Torr.
キャリアガスはH2o分圧5X10 Torrのwe
t N2200 sccM 、堆積時間30分で、平均
面粗さ約107flの石英ガラス基板上に成長させたZ
n○ 薄膜螢光体は、通常の平均粒径1μm2層厚約2
0 p mの粉末状螢光体層と全く同等の発光効率を得
た。第4図に、平滑な石英ガラス基板と平均面粗さ約1
0μmの同じく石英ガラス基板上に同一条件で成長させ
だZnO螢光体薄膜の表面sEM@を示す。aが平滑面
上に成長させた膜で、bが粗面状に成長させた膜である
。前記のように、aの場合は、結晶粒の配向度が高く、
膜表面は基板表面と平行面を形成している部分の割合が
高い。一方すの場合は、結晶粒の配向度は低く、表面は
細かな凹凸が形成されている。aに比べてbの光取り出
し効率は4倍も高い。The carrier gas has a H2o partial pressure of 5X10 Torr.
Z grown on a quartz glass substrate with an average surface roughness of about 107 fl at t N2200 sccM and a deposition time of 30 min.
n○ Thin film phosphor has a normal average particle size of 1 μm and a layer thickness of about 2
A luminous efficiency completely equivalent to that of a 0 pm powdered phosphor layer was obtained. Figure 4 shows a smooth quartz glass substrate with an average surface roughness of approximately 1.
The surface sEM@ of a ZnO phosphor thin film grown under the same conditions on a 0 μm quartz glass substrate is shown. A is a film grown on a smooth surface, and b is a film grown on a rough surface. As mentioned above, in the case of a, the degree of orientation of the crystal grains is high;
A high proportion of the film surface forms a plane parallel to the substrate surface. On the other hand, in the case of glass, the degree of orientation of the crystal grains is low, and the surface is formed with fine irregularities. The light extraction efficiency of b is four times higher than that of a.
適当な成膜方法としては、他に有機金属化学蒸着法(以
下MO−CVD法と略称)を用いても同様の効果が得ら
れる。Znを含む有機金属化合物としてば、高純度のジ
メチル亜鉛;(CH3)2Zn もしくはジエチル亜鉛
(02H6) 2 Z nを用い、酸化ガスとして02
(02以外にもH2O,N20.CO3゜NO2を用い
ても良い)を用いる。有機金属化合物はバブラーを介し
てArやN2等のキャリアガスで反応室に運ばれ、基板
近傍で複数の小穴から、表面を粗面化した基板に吹きつ
けられる。基板温度200℃以上で、前記実施例同様、
内部発光効率、光取9出し効率共高い薄膜螢光体を得る
ことができる。Similar effects can also be obtained by using a metal organic chemical vapor deposition method (hereinafter abbreviated as MO-CVD method) as a suitable film forming method. As an organometallic compound containing Zn, high purity dimethylzinc; (CH3)2Zn or diethylzinc (02H6)2Zn is used, and 02 as an oxidizing gas.
(In addition to 02, H2O, N20.CO3°NO2 may also be used). The organometallic compound is carried to the reaction chamber by a carrier gas such as Ar or N2 through a bubbler, and is blown onto the substrate whose surface has been roughened through a plurality of small holes near the substrate. At a substrate temperature of 200°C or higher, as in the previous example,
A thin film phosphor with high internal luminous efficiency and high light extraction efficiency can be obtained.
以上の様に形成したZnO:Zn薄膜螢光体から成る螢
光体表示板は、例えば前記光プリンター用線光源に利用
できる。即ち、本発明の螢光体面をフォトリソグラフィ
ー等の手段を用いて、−直線状に、一定間隔でならんだ
各ドツトに分離して、選択的に電子ビームを照射してや
れば、高い光取り出し効率を有し、且つ隣接ドツトへの
光漏話の少ない螢光体アレイが実現できる。薄膜状の螢
光体面であるため、高電流密度の電子ビーム照射による
温度消耗やチャージアップを回避することができ、ビー
ムパワー密度20W/cA以上の電子ビームを照射して
200mW/ctA以上の大光出力を得ることができだ
。The phosphor display plate made of the ZnO:Zn thin film phosphor formed as described above can be used, for example, as a line light source for an optical printer. That is, if the phosphor surface of the present invention is separated into dots arranged linearly at regular intervals using means such as photolithography and selectively irradiated with an electron beam, high light extraction efficiency can be achieved. It is possible to realize a phosphor array with a small amount of optical crosstalk to adjacent dots. Because it is a thin film-like phosphor surface, it is possible to avoid temperature consumption and charge-up due to high current density electron beam irradiation, and it is possible to irradiate an electron beam with a beam power density of 20 W/cA or more and generate a high power of 200 mW/ctA or more. You can get the light output.
本発明は、他の螢光体材料てついても効果を有し、テレ
ビ用螢光体(Z n S :A、、g 、 Cl、 Y
202 S : Eu等)を粗面化したフェースプレ
ート内面に成長させ薄膜化することで、大電流密度の電
子ビーム照射如耐え得る螢光体表示面が実現でき、プロ
ジェクション管の輝度を大幅に向上する。The present invention is also effective with other phosphor materials, such as television phosphors (ZnS: A, g, Cl, Y
By growing a thin film of 202S (Eu, etc.) on the roughened inner surface of the face plate, it is possible to create a phosphor display surface that can withstand high current density electron beam irradiation, greatly improving the brightness of the projection tube. do.
発明の効果
基板と薄膜螢光体の界面及び薄膜螢光体表面が粗面であ
るような構成にすることにより、光取り出し効率の高い
、高輝度発光可能な螢光体表示板を実現することができ
る。Effects of the Invention To realize a phosphor display board capable of emitting high-intensity light with high light extraction efficiency by configuring the interface between the substrate and the thin film phosphor and the surface of the thin film phosphor to be rough. Can be done.
第1図は本発明の一実施例における螢光体表示板の断面
図、第2図は従来ブラウン管等で用いられている螢光体
部分の断面図、第3図aは従来の粉末層状螢光体の場合
の光の取り出される様子を模式的に示した螢光体部分の
断面図、第3図すば薄膜螢光体の場合の同じく断面図、
第4図は板表面が平滑な場合、同図すはガラス基板表面
が粗面の場合を示す。
1・・・・・・ガラス基板、2・・・・・・螢光体結晶
粒、3・・・・・・薄膜螢光体。
代牙人の氏名 弁理士 中 尾 敏 男 ほか1名菓
1 図
4Xぎ
第2図
f07)フス考Δ矢
第 3 図
ζcL)
20真墾
とb)
1例みFIG. 1 is a sectional view of a phosphor display plate according to an embodiment of the present invention, FIG. 2 is a sectional view of a phosphor portion conventionally used in cathode ray tubes, etc., and FIG. A cross-sectional view of a phosphor portion schematically showing how light is extracted in the case of a light body, FIG.
FIG. 4 shows the case where the plate surface is smooth, and the same figure shows the case where the glass substrate surface is rough. 1... Glass substrate, 2... Fluorescent crystal grains, 3... Thin film phosphor. Name of patron: Patent attorney Toshio Nakao and one other name
1 Figure 4
Claims (4)
体結晶粒の集合体とを備え、前記螢光体結晶粒の少なく
とも一つの結晶面が基板表面に固着していることを特徴
とする螢光体表示板。(1) A substrate with a roughened surface and an aggregate of phosphor crystal grains deposited on the surface thereof, and at least one crystal plane of the phosphor crystal grains is fixed to the substrate surface. Features a fluorescent display board.
も薄いことを特徴とする特許請求の範囲第1項記載の螢
光体表示板。(2) The phosphor display plate according to claim 1, wherein the thickness of the thin film phosphor is thinner than the maximum surface roughness of the substrate surface.
る特許請求の範囲第1項記載の螢光体表示板。(3) The phosphor display plate according to claim 1, characterized in that the degree of orientation of the phosphor crystal grains is low.
基板面上に化学気相成長法により薄膜螢光体を成長させ
ることを特徴とする螢光体表示板の製造方法。(4) A method for manufacturing a phosphor display plate, which comprises roughening the substrate surface in advance and growing a thin film phosphor on the roughened substrate surface by chemical vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61228981A JP2578778B2 (en) | 1986-09-26 | 1986-09-02 | Manufacturing method of phosphor display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61228981A JP2578778B2 (en) | 1986-09-26 | 1986-09-02 | Manufacturing method of phosphor display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6362135A true JPS6362135A (en) | 1988-03-18 |
| JP2578778B2 JP2578778B2 (en) | 1997-02-05 |
Family
ID=16884897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61228981A Expired - Lifetime JP2578778B2 (en) | 1986-09-26 | 1986-09-02 | Manufacturing method of phosphor display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2578778B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0877939A (en) * | 1994-09-05 | 1996-03-22 | Sharp Corp | Display element |
| WO2005059949A1 (en) * | 2003-12-17 | 2005-06-30 | Nihon University | Field emission spot light source lamp |
| WO2007097252A1 (en) * | 2006-02-27 | 2007-08-30 | Kabushiki Kaisha Toshiba | Flat panel display device and its manufacturing method |
| JP5862302B2 (en) * | 2010-01-25 | 2016-02-16 | コニカミノルタ株式会社 | Radiation image conversion panel and radiation image detector using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5250668U (en) * | 1975-10-08 | 1977-04-11 |
-
1986
- 1986-09-02 JP JP61228981A patent/JP2578778B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5250668U (en) * | 1975-10-08 | 1977-04-11 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0877939A (en) * | 1994-09-05 | 1996-03-22 | Sharp Corp | Display element |
| WO2005059949A1 (en) * | 2003-12-17 | 2005-06-30 | Nihon University | Field emission spot light source lamp |
| JPWO2005059949A1 (en) * | 2003-12-17 | 2007-07-12 | 学校法人日本大学 | Field emission point light source lamp |
| WO2007097252A1 (en) * | 2006-02-27 | 2007-08-30 | Kabushiki Kaisha Toshiba | Flat panel display device and its manufacturing method |
| JP5862302B2 (en) * | 2010-01-25 | 2016-02-16 | コニカミノルタ株式会社 | Radiation image conversion panel and radiation image detector using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2578778B2 (en) | 1997-02-05 |
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