JPS6366206B2 - - Google Patents
Info
- Publication number
- JPS6366206B2 JPS6366206B2 JP8627783A JP8627783A JPS6366206B2 JP S6366206 B2 JPS6366206 B2 JP S6366206B2 JP 8627783 A JP8627783 A JP 8627783A JP 8627783 A JP8627783 A JP 8627783A JP S6366206 B2 JPS6366206 B2 JP S6366206B2
- Authority
- JP
- Japan
- Prior art keywords
- skin
- semiconductor
- main body
- cleaning part
- skin cleansing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229920000742 Cotton Polymers 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000011358 absorbing material Substances 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000008294 cold cream Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000002468 redox effect Effects 0.000 description 1
Landscapes
- Body Washing Hand Wipes And Brushes (AREA)
- Brushes (AREA)
- Devices For Medical Bathing And Washing (AREA)
Description
【発明の詳細な説明】
本発明は、主として、植設された刷毛等で皮膚
を擦ることにより垢等を落す皮膚洗滌具に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention mainly relates to a skin cleaning tool that removes dirt and grime by rubbing the skin with an implanted brush or the like.
この種の皮膚洗滌具で、従来から一般的に知ら
れているものは、刷毛等による擦り力即ち物理的
な力のみによつて洗滌を行なうものであつたが、
このものは、必要以上に強く擦ると皮膚を傷付け
易いので洗滌効果にも自ずと限界があつた。 Conventionally known skin cleansing tools of this type cleanse using only physical force, i.e., rubbing force with a brush or the like.
Since this product tends to damage the skin if rubbed too forcefully than necessary, there is a limit to its cleansing effect.
本発明は、かかる実情に鑑み、光励起状態が関
与する光電気化学作用を有効利用して、物理的な
力のみによる洗滌では達成し得なかつた高い洗滌
効果を発揮し得る皮膚洗滌具を提供する点に目的
がある。 In view of the above circumstances, the present invention provides a skin cleansing tool that effectively utilizes photoelectrochemical action involving a photoexcited state to exhibit a high cleansing effect that could not be achieved by cleansing using only physical force. The points have a purpose.
上記目的を達成すべくなされた本発明に係る皮
膚洗滌具の特徴構成は、皮膚に対する摺接洗滌部
を有する本体に光電極反応を生じるＮ型半導体が
皮膚表面の水分と接触可能な状態で付設されてい
る点にある。 In order to achieve the above object, the skin cleansing device according to the present invention has a characteristic structure in which an N-type semiconductor that generates a photoelectrode reaction is attached to a main body having a cleaning portion that comes into sliding contact with the skin in such a manner that it can come into contact with moisture on the skin surface. It is in the point that it is.
このような特徴構成を有する本発明の作用効果
は、次の通りである。 The effects of the present invention having such a characteristic configuration are as follows.
つまり、Ｎ型半導体と皮膚表面の垢、フアウン
デーシヨン、コールドクリーム等との間で石鹸水
等の水分が介在している状態で、前記半導体に光
（自然光でも良い）をあてて電子励起すると、半
導体の表面の空間電荷層の電位勾配によつて正孔
を与えられ分極が起こる。皮膚の方は電子密度の
差によつて逆極性となる。故に半導体周辺では石
鹸水等の水分から電子を放出する酸化反応が生起
され、他方皮膚周辺では水分から電子を得る還元
反応が生起される。つまり、光電極反応を有効利
用して、皮膚に付着している垢等を還元し、併せ
て分極作用により垢等を分解し、沈着色素も分解
する。このように、光エネルギーによる還元反応
及び分極作用と云う光電気化学作用を有効利用す
ることにより、物理的な力のみによる洗滌では達
し得なかつた非常に高い洗滌効果を達成し得るに
至つた。 In other words, with moisture such as soapy water intervening between the N-type semiconductor and skin surface dirt, foundation, cold cream, etc., light (natural light may be used) is applied to the semiconductor to excite electrons. Then, holes are provided by the potential gradient of the space charge layer on the surface of the semiconductor, causing polarization. The skin has opposite polarity due to the difference in electron density. Therefore, an oxidation reaction that releases electrons from moisture such as soapy water occurs around the semiconductor, while a reduction reaction that obtains electrons from moisture occurs around the skin. In other words, the photoelectrode reaction is effectively used to reduce dirt and grime adhering to the skin, and at the same time, the polarization action decomposes the dirt and deposited pigments. In this way, by effectively utilizing the photoelectrochemical action of the reduction reaction and polarization action caused by light energy, it has become possible to achieve a very high cleaning effect that could not be achieved by cleaning using physical force alone.
次に、本発明構成の実施例を図面に基づいて説
明する。 Next, embodiments of the configuration of the present invention will be described based on the drawings.
第１図イ，ロに示すように、柄１の付いた本体
２に、石鹸水の付着した皮膚に摺接して洗滌する
刷毛３ａを植設して摺接洗滌部３を構成すると共
に、本体２側に、溶液中で光起電力を生じるＮ型
半導体４を一部露出させた状態で埋設し、更に、
その半導体４から前記摺接洗滌部３にまで水路５
を形成して半導体４と皮膚表面の水分とが接触す
るようになし、もつて、皮膚洗滌時における光の
照射に伴なつて半導体４と皮膚との間で分極作用
及び酸化還元作用が生じるよう構成してある。 As shown in FIGS. 1A and 1B, a brush 3a that comes into sliding contact with the skin to which soapy water has adhered is implanted in the main body 2 with a handle 1 to form a sliding cleaning section 3. An N-type semiconductor 4 that generates a photovoltaic force in a solution is buried in a partially exposed state on the 2 side, and further,
A water channel 5 extends from the semiconductor 4 to the sliding contact cleaning section 3.
is formed so that the semiconductor 4 comes into contact with the moisture on the skin surface, and as a result, polarization and redox effects occur between the semiconductor 4 and the skin when irradiated with light during skin cleansing. It is configured.
又、前記半導体４は、チタンを1200〜1500℃で
２〜10分間赤熱化することによつて得られた二酸
化チタンで構成してある。 The semiconductor 4 is made of titanium dioxide obtained by making titanium red hot at 1200 to 1500°C for 2 to 10 minutes.
次に、本発明の別実施例を説明する。 Next, another embodiment of the present invention will be described.
(イ) 第２図イ，ロに示すように、本体２に埋設さ
れた半導体４を一部摺接洗滌部３側にも露出さ
せた状態で設け、前記水路５を半導体４自身で
兼用構成する。(A) As shown in FIG. 2 A and B, the semiconductor 4 buried in the main body 2 is partially exposed to the sliding contact cleaning part 3 side, and the semiconductor 4 itself serves as the water channel 5. do.
(ロ) 第３図に示すように、本体２に貯水溝５ａを
刻設し、その貯水溝５ａに石鹸水が入り込むこ
とによつて水路５を形成する。(b) As shown in FIG. 3, a water storage groove 5a is carved in the main body 2, and the water channel 5 is formed by the soapy water entering the water storage groove 5a.
(ハ) 本体２自身が半導体で製作されている。(c) The main body 2 itself is made of semiconductor.
(ニ) 本体２を透明樹脂で構成し、その樹脂内に半
導体４をそつくり埋設し、樹脂を通して光が半
導体４にまで届くよう構成する。(d) The main body 2 is made of transparent resin, and the semiconductor 4 is embedded in the resin so that light can reach the semiconductor 4 through the resin.
(ホ) 第４図に示すように、前記摺接洗滌部３をガ
ーゼや綿織等の吸水製のもの６で構成する。(e) As shown in FIG. 4, the sliding contact cleaning section 3 is constructed of a water-absorbing material 6 such as gauze or cotton fabric.
図面は本発明に係る皮膚洗滌具の実施例を示
し、第１図イは要部の一部切欠き側面図、第１図
ロは第１図イにおけるロ―ロ線断面図、第２図な
いし第４図は夫々別実施例を示し、第２図イは要
部の一部切欠き側面図、第２図ロは第２図イにお
けるロ―ロ線断面図、第３図及び第４図は一部切
欠き側面図である。
３……摺接洗滌部、２……本体、４……半導
体、５……水路、３ａ……刷毛、５ａ……貯水
溝。
The drawings show an embodiment of the skin cleansing tool according to the present invention, and FIG. 1A is a partially cutaway side view of the main part, FIG. 4 to 4 respectively show different embodiments, FIG. 2A is a partially cutaway side view of the main part, FIG. 2B is a sectional view taken along the Ro-Ro line in FIG. The figure is a partially cutaway side view. 3...Sliding cleaning part, 2...Main body, 4...Semiconductor, 5...Waterway, 3a...Brush, 5a...Water storage groove.
Claims (1)
光電極反応を生じるＮ型半導体４が皮膚表面の水
分と接触可能な状態で付設されている皮膚洗滌
具。 ２ 前記半導体４と皮膚表面の水分とを接触させ
るための手段が半導体４と摺接洗滌部３との間に
形成される水路５である特許請求の範囲第１項に
記載の皮膚洗滌具。 ３ 前記摺接洗滌部３が刷毛３ａで構成されてい
る特許請求の範囲第１項又は第２項に記載の皮膚
洗滌具。 ４ 前記摺接洗滌部３が、ガーゼや綿織等の吸水
製のもので構成されている特許請求の範囲第１項
又は第２項に記載の皮膚洗滌具。 ５ 前記水路５が、半導体４として一端が摺接洗
滌部３にまで延出されているものを用いることに
より、この半導体４で兼用されている特許請求の
範囲第２項に記載の皮膚洗滌具。 ６ 前記水路５が本体に刻設した貯水溝５ｂをも
つて構成されている特許請求の範囲第２項に記載
の皮膚洗滌具。 ７ 前記本体２自体がＮ型半導体から構成されて
いる特許請求の範囲第１項に記載の皮膚洗滌具。 ８ 前記半導体４が、チタンを1200〜1500℃で２
〜10分間赤熱化することによつて得られた二酸化
チタンで構成されたものである特許請求の範囲第
１項ないし第７項の何れかに記載の皮膚洗滌具。[Scope of Claims] 1. A skin cleaning tool in which an N-type semiconductor 4 that produces a photoelectrode reaction is attached to a main body 2 having a cleaning part 3 that slides into contact with the skin in such a manner that it can come into contact with moisture on the skin surface. 2. The skin cleansing tool according to claim 1, wherein the means for bringing the semiconductor 4 into contact with moisture on the skin surface is a water channel 5 formed between the semiconductor 4 and the sliding cleaning part 3. 3. The skin cleaning tool according to claim 1 or 2, wherein the sliding cleaning part 3 is constituted by a brush 3a. 4. The skin cleansing tool according to claim 1 or 2, wherein the sliding cleaning part 3 is made of water-absorbing material such as gauze or cotton fabric. 5. The skin cleansing device according to claim 2, wherein the water channel 5 is double-used as the semiconductor 4 by using a semiconductor 4 whose one end extends to the sliding cleaning part 3. . 6. The skin cleansing device according to claim 2, wherein the water channel 5 includes a water storage groove 5b carved in the main body. 7. The skin cleansing device according to claim 1, wherein the main body 2 itself is made of an N-type semiconductor. 8 The semiconductor 4 is made of titanium at 1200 to 1500°C.
8. The skin cleansing tool according to any one of claims 1 to 7, which is composed of titanium dioxide obtained by red-hot heating for ~10 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58086277A JPS59211409A (en) | 1983-05-17 | 1983-05-17 | Skin washing tool |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58086277A JPS59211409A (en) | 1983-05-17 | 1983-05-17 | Skin washing tool |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59211409A JPS59211409A (en) | 1984-11-30 |
| JPS6366206B2 true JPS6366206B2 (en) | 1988-12-20 |
Family
ID=13882324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58086277A Granted JPS59211409A (en) | 1983-05-17 | 1983-05-17 | Skin washing tool |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59211409A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254511U (en) * | 1988-10-12 | 1990-04-19 |
-
1983
- 1983-05-17 JP JP58086277A patent/JPS59211409A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254511U (en) * | 1988-10-12 | 1990-04-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59211409A (en) | 1984-11-30 |
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