JPS6367263U - - Google Patents
Info
- Publication number
- JPS6367263U JPS6367263U JP14198287U JP14198287U JPS6367263U JP S6367263 U JPS6367263 U JP S6367263U JP 14198287 U JP14198287 U JP 14198287U JP 14198287 U JP14198287 U JP 14198287U JP S6367263 U JPS6367263 U JP S6367263U
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- transistor
- package terminal
- line
- parallel circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002265 prevention Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第１図イ，ロは従来のＩＣにおける静電破壊防
止回路を示す図、第２図は静電破壊防止回路を例
示する図、第３図はクロスアンダー部を示すＩＣ
チツプ断面図である。
図において、１はＩＣパツケージの入出力端子
、２は入出力回路、３は静電破壊防止回路、４は
低抵抗層、Ｃ′はコンデンサ、Ｄ′はダイオード
、６はＰ形基板をそれぞれ示す。
Figures 1A and 2B are diagrams showing electrostatic damage prevention circuits in conventional ICs, Figure 2 is a diagram illustrating electrostatic damage prevention circuits, and Figure 3 is an IC diagram showing a cross-under section.
It is a chip sectional view. In the figure, 1 is the input/output terminal of the IC package, 2 is the input/output circuit, 3 is the electrostatic damage prevention circuit, 4 is the low resistance layer, C' is the capacitor, D' is the diode, and 6 is the P-type board. .
Claims (1)
端子から加わる静電気から保護する静電破壊防止
回路として、該トランジスタとパツケージ端子間
の線路に、ダイオードとコンデンサの並列回路の
一端を接続し、更に該並列回路の他端を最低電位
に接続したことを特徴とする半導体装置における
静電破壊防止回路。 As an electrostatic breakdown prevention circuit that protects a transistor of a semiconductor integrated circuit from static electricity applied from a package terminal, one end of a parallel circuit of a diode and a capacitor is connected to the line between the transistor and the package terminal, and the other end of the parallel circuit is connected to the line between the transistor and the package terminal. A circuit for preventing electrostatic damage in a semiconductor device, characterized in that an end thereof is connected to the lowest potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14198287U JPS6367263U (en) | 1987-09-17 | 1987-09-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14198287U JPS6367263U (en) | 1987-09-17 | 1987-09-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6367263U true JPS6367263U (en) | 1988-05-06 |
Family
ID=31050277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14198287U Pending JPS6367263U (en) | 1987-09-17 | 1987-09-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6367263U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5376678A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | Semiconductor device |
-
1987
- 1987-09-17 JP JP14198287U patent/JPS6367263U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5376678A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | Semiconductor device |
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