JPS636760U - - Google Patents

Info

Publication number
JPS636760U
JPS636760U JP1986100977U JP10097786U JPS636760U JP S636760 U JPS636760 U JP S636760U JP 1986100977 U JP1986100977 U JP 1986100977U JP 10097786 U JP10097786 U JP 10097786U JP S636760 U JPS636760 U JP S636760U
Authority
JP
Japan
Prior art keywords
thin film
magnetic sensor
film magnetoresistive
insulating substrate
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1986100977U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986100977U priority Critical patent/JPS636760U/ja
Publication of JPS636760U publication Critical patent/JPS636760U/ja
Pending legal-status Critical Current

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  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の実施例の基本的構成を示す平
面図、第2図aは同上の製造例を示す拡大平面図
、第2図bは第2図aの―線断面図、第3図
は本発明の実施例の使用状態を示す平面図、第4
図は本発明の応用例を示す側面図、第5図は従来
の磁気センサの基本的構成を示す平面図、第6図
は磁気センサの他例を示す平面図である。 1……磁気センサ、3a,3b……薄膜磁気抵
抗効果素子。
FIG. 1 is a plan view showing the basic configuration of an embodiment of the present invention, FIG. 2 a is an enlarged plan view showing a manufacturing example of the same, FIG. The figure is a plan view showing the usage state of the embodiment of the present invention.
The figure is a side view showing an application example of the present invention, FIG. 5 is a plan view showing the basic configuration of a conventional magnetic sensor, and FIG. 6 is a plan view showing another example of the magnetic sensor. 1... Magnetic sensor, 3a, 3b... Thin film magnetoresistive element.

Claims (1)

【実用新案登録請求の範囲】 (1) 絶縁基板上に薄膜磁気抵抗効果素子を形成
し、この薄膜磁気抵抗効果素子に生じる被検出体
からの磁束変化に基づく磁気抵抗の変化を利用し
て被検出体の検出を行う磁気センサにおいて、前
記絶縁基板上に差動的に動作する一対の薄膜磁気
抵抗効果素子を設けこの両素子の分圧出力の検出
信号として取り出すようにしたことを特徴とする
磁気センサ。 (2) 前記両薄膜磁気抵抗効果素子は、絶縁基板
上に所定間隔を隔てて平行配置に設けられたもの
である実用新案登録請求の範囲第1項記載の磁気
センサ。 (3) 前記両薄膜磁気抵抗効果素子間の距離が被
検出体の着磁磁極ピツチと同等かそれ以上である
実用新案登録請求の範囲第1項若しくは第2項に
記載の磁気センサ。
[Claims for Utility Model Registration] (1) A thin film magnetoresistive element is formed on an insulating substrate, and a magnetoresistive element is formed using a change in magnetoresistance caused by a change in magnetic flux from an object to be detected that occurs in the thin film magnetoresistive element. A magnetic sensor for detecting an object is characterized in that a pair of thin film magnetoresistive elements that operate differentially are provided on the insulating substrate, and the partial voltage output of both elements is extracted as a detection signal. magnetic sensor. (2) The magnetic sensor according to claim 1, wherein both of the thin film magnetoresistive elements are arranged in parallel on an insulating substrate with a predetermined spacing between them. (3) The magnetic sensor according to claim 1 or 2, wherein the distance between the two thin film magnetoresistive elements is equal to or greater than the magnetized magnetic pole pitch of the object to be detected.
JP1986100977U 1986-06-30 1986-06-30 Pending JPS636760U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986100977U JPS636760U (en) 1986-06-30 1986-06-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986100977U JPS636760U (en) 1986-06-30 1986-06-30

Publications (1)

Publication Number Publication Date
JPS636760U true JPS636760U (en) 1988-01-18

Family

ID=30971295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986100977U Pending JPS636760U (en) 1986-06-30 1986-06-30

Country Status (1)

Country Link
JP (1) JPS636760U (en)

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