JPS638049Y2 - - Google Patents
Info
- Publication number
- JPS638049Y2 JPS638049Y2 JP122180U JP122180U JPS638049Y2 JP S638049 Y2 JPS638049 Y2 JP S638049Y2 JP 122180 U JP122180 U JP 122180U JP 122180 U JP122180 U JP 122180U JP S638049 Y2 JPS638049 Y2 JP S638049Y2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- electron beam
- sub
- control element
- field control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 238000010586 diagram Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Description
【考案の詳細な説明】
本考案はインライン形カラー受像管の電子銃構
体に係り、特に電子銃の最先端側に配置する磁界
制御素子の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron gun assembly for an in-line color picture tube, and more particularly to an improvement in a magnetic field control element disposed at the leading edge of the electron gun.
インライン配列の3電子ビームを利毛するカラ
ー受像管では、外部磁気偏向ヨークにより螢光面
上に描かれるラスターのサイズが、ヨーク磁界中
におけるサイドビームの偏位に基因して3電子ビ
ームの中央電子ビームとサイド電子ビームとで異
つているが、これを補正するために電子銃には磁
性体からなる磁界制御素子が設けられる。 In a color picture tube with three electron beams arranged in-line, the size of the raster drawn on the phosphor surface by an external magnetic deflection yoke is determined by the center of the three electron beams due to the deflection of the side beams in the yoke magnetic field. Although the electron beam and the side electron beam are different, in order to correct this difference, the electron gun is provided with a magnetic field control element made of a magnetic material.
第1図は、従来の磁界制御素子の一例を示す斜
視図で、図において1cは中央電子ビームの通過
孔、1a,1bはサイド電子ビームの通過孔、
2,3は磁性体材料からなる磁界制御素子であ
り、これは電子銃の最先端、すなわち電子銃の螢
光面側に取付けられる。 FIG. 1 is a perspective view showing an example of a conventional magnetic field control element, in which 1c is a central electron beam passage hole, 1a and 1b are side electron beam passage holes,
Reference numerals 2 and 3 indicate magnetic field control elements made of magnetic material, which are attached to the leading edge of the electron gun, that is, to the fluorescent surface side of the electron gun.
この磁界制御素子2,3の詳細を一方の制御素
子2をもとに説明すると、中央電子ビームの通過
孔1cとサイド電子ビームの通過孔1a間に配置
された主壁2aと、この両端からそれぞれ外方に
のび、かつ前記主壁2aとほぼ垂直な平面をもつ
平面部2bと、この平面部2bから立上り、かつ
この平面部2bおよび前記主壁2aとそれぞれ垂
直な平面をもつ一対の副壁2cとからなつてお
り、この副壁2cはサイド電子ビームの通過孔1
aの上下に配置されている。なお、他方の磁界制
御素子3もこれと同じ構造となつている。また4
は水平偏向磁界、5は垂直偏向磁界であり各電子
ビームを各々水平方向および垂直方向に偏向させ
る磁界である。 The details of the magnetic field control elements 2 and 3 will be explained based on one of the control elements 2. A plane portion 2b each extending outward and having a plane substantially perpendicular to the main wall 2a, and a pair of sub-plane portions 2b rising from the plane portion 2b and having planes perpendicular to the plane portion 2b and the main wall 2a, respectively. This sub-wall 2c has a side electron beam passage hole 1.
They are placed above and below a. Note that the other magnetic field control element 3 also has the same structure. Also 4
5 is a horizontal deflection magnetic field, and 5 is a vertical deflection magnetic field, which deflects each electron beam in the horizontal direction and the vertical direction, respectively.
これらの磁界と前記磁界制御素子2,3との関
係をみると、主壁2a,3aは垂直偏向磁界5と
対面しており、また副壁2c,3cは水平偏向磁
界4と対面する配置となつている。次に垂直偏向
磁界についてみると、サイド電子ビーム通過孔1
a,1b内の磁界は磁界制御素子2,3の特に副
壁2c,3cに集中し弱まりサイド電子ビームの
ラスターは垂直方向で小さくなる。中央電子ビー
ム通過孔1c内では磁界はほとんど変化せず、し
たがつて中央電子ビームのラスターは変化しな
い。このようにして磁界制御素子により中央電子
ビームのラスターと、サイド電子ビームのラスタ
ーを画面上で一致させることができる。 Looking at the relationship between these magnetic fields and the magnetic field control elements 2 and 3, the main walls 2a and 3a are arranged to face the vertical deflection magnetic field 5, and the sub walls 2c and 3c are arranged to face the horizontal deflection magnetic field 4. It's summery. Next, looking at the vertical deflection magnetic field, the side electron beam passing hole 1
The magnetic fields in a and 1b are concentrated and weakened, especially on the sub-walls 2c and 3c of the magnetic field control elements 2 and 3, and the raster of the side electron beam becomes smaller in the vertical direction. The magnetic field hardly changes within the central electron beam passage hole 1c, so the raster of the central electron beam does not change. In this way, the raster of the center electron beam and the raster of the side electron beams can be made to match on the screen by the magnetic field control element.
以上が、従来の磁気制御素子の一例とその動作
であるが、しかしこのような構造では水平偏向磁
界が磁気制御素子2,3の副壁2c,3cを通る
と、偏向磁界を妨げる方向に発生するうず電流の
ためサイド電子ビーム通過孔1a,1b内には水
平偏向磁界4と逆向きの磁界が発生する。一方、
中央電子ビーム通過孔1c内ではそのような現象
が生じないため、画面上で第2図に示すようなラ
スターずれ、すなわち、中央電子ビームのラスタ
7とサイドビームのラスタ8との間にずれが起
き、コンバーゼンス品位が劣化するという欠点が
ある。 The above is an example of a conventional magnetic control element and its operation.However, in such a structure, when a horizontal deflection magnetic field passes through the sub-walls 2c and 3c of the magnetic control elements 2 and 3, it is generated in a direction that obstructs the deflection magnetic field. Due to the eddy current, a magnetic field in the opposite direction to the horizontal deflection magnetic field 4 is generated inside the side electron beam passage holes 1a, 1b. on the other hand,
Since such a phenomenon does not occur inside the central electron beam passage hole 1c, there is a raster misalignment on the screen as shown in FIG. This has the disadvantage that convergence quality deteriorates.
この欠点を解決するため副壁2c,3cを単に
なくした場合には、垂直偏向磁界の集中度が小さ
くなり、ラスターサイズの補正が十分でなくな
り、これもコンバーゼンス品位の劣化となる。 If the sub-walls 2c and 3c are simply eliminated in order to solve this drawback, the degree of concentration of the vertical deflection magnetic field will be reduced, and the raster size correction will not be sufficient, which will also result in deterioration of the convergence quality.
なお、垂直偏向磁界5も磁界制御素子2,3の
主壁2a,3aを通るが、垂直偏向磁界は周波数
が低いためうず電流の発生も小さく上記の問題は
無視できる。 Note that the vertical deflection magnetic field 5 also passes through the main walls 2a, 3a of the magnetic field control elements 2, 3, but since the frequency of the vertical deflection magnetic field is low, the generation of eddy current is small and the above problem can be ignored.
本考案は上記の欠点を解決するために、磁界制
御素子の改良をはかつたもので、水平偏向磁界に
対面する平面をなくし、かつ3電子ビームのラス
ターサイズの補正を行なえる電子銃構体を提供す
るものである。以下、本考案を図面に示す実施例
をもとに説明すると、第3図は本考案の一実施例
を示す第1図に相当する部分の図であり、第1図
と同じ部分には同一記号を付し詳細な説明は省略
する。 In order to solve the above-mentioned drawbacks, the present invention improves the magnetic field control element, eliminates the plane facing the horizontal deflection magnetic field, and creates an electron gun structure that can correct the raster size of the three electron beams. This is what we provide. Below, the present invention will be explained based on the embodiment shown in the drawings. Fig. 3 is a diagram of a part corresponding to Fig. 1 showing an embodiment of the present invention, and the same parts as Fig. 1 are the same. Symbols are given and detailed explanations are omitted.
第3図において磁界制御素止12,13はその
主壁12a,13aおよび平板部12b,13b
は従来と同じ構成であるが、副壁12c,13c
が前記主壁12a,13aと平行に立上つてお
り、かつ水平偏向磁界4と平行な構造となつてい
る。換言すれば垂直偏向磁界5と対面する構造と
なつている。そして、その他の基本的な動作は従
来の磁界制御素止と同じであるが、副壁12c,
13cは水平偏向磁界には交わらないため問題と
なるうず電流は流れず、また垂直偏向磁界に対し
ては直交しているため磁界を集中して弱めること
ができラスターサイズの補正が可能となる。補正
量は副壁12c,13cの寸法を換えることによ
り変化させることができる。 In FIG. 3, the magnetic field control elements 12, 13 have main walls 12a, 13a and flat plate parts 12b, 13b.
has the same configuration as the conventional one, but the sub walls 12c and 13c
stands up parallel to the main walls 12a, 13a, and has a structure parallel to the horizontal deflection magnetic field 4. In other words, the structure is such that it faces the vertical deflection magnetic field 5. The other basic operations are the same as the conventional magnetic field control element, but the sub-walls 12c,
13c does not intersect with the horizontal deflection magnetic field, so no problematic eddy current flows, and since it is orthogonal to the vertical deflection magnetic field, the magnetic field can be concentrated and weakened, making it possible to correct the raster size. The amount of correction can be changed by changing the dimensions of the sub-walls 12c and 13c.
なお、第3図の実施例では平板部の先端部に副
壁のある磁界制御素子について述べたが、副壁の
位置はこの部分に限られることなく、例えば第4
図に示す例の様に平板部12b,13bの中間部
にあつてもその動作は同等である。 In the embodiment shown in FIG. 3, a magnetic field control element having a sub-wall at the tip of the flat plate part has been described, but the position of the sub-wall is not limited to this part, for example, the fourth
The operation is the same even if it is located in the middle of the flat plate portions 12b and 13b as in the example shown in the figure.
また、第5図は副壁12c,13cの他の例を
示すもので、水平偏向磁界と平行な方向からみた
図である。第5図a,bは平板部の一部に突起を
設けたもの、cは別の部材を溶接のような手段で
固定したものである。 Further, FIG. 5 shows another example of the sub-walls 12c and 13c, and is a view seen from a direction parallel to the horizontal deflection magnetic field. Figures 5a and 5b have projections provided on a part of the flat plate part, and Figure 5c shows another member fixed by means such as welding.
以上のように、本考案によれば中央電子ビーム
とサイド電子ビームのラスターサイズを一致し得
ることはもちろんのこと、水平偏向磁界のうず電
流によるラスターずれを皆無にできるなどの特徴
を有するものである。 As described above, the present invention not only makes it possible to match the raster sizes of the center electron beam and side electron beams, but also has the characteristics of completely eliminating raster deviations caused by eddy currents in the horizontal deflection magnetic field. be.
第1図および第2図は従来の磁界制御素子とラ
スターサイズのずれを説明するための図、第3図
および第4図は本考案の電子銃構体の磁界制御素
子の例を示す図、第5図は副壁の例を示す図であ
る。
1……電子ビーム通過孔、2,3,12,13
……磁界制御素子、2a,3a,12a,13a
……主壁、2b,3b,12b,13b……平板
部、2c,3c12c,13c……副壁、4……
水平偏向磁界、5……垂直偏向磁界。
1 and 2 are diagrams for explaining the difference in raster size from the conventional magnetic field control element. FIG. 5 is a diagram showing an example of a sub-wall. 1...Electron beam passing hole, 2, 3, 12, 13
...Magnetic field control element, 2a, 3a, 12a, 13a
...Main wall, 2b, 3b, 12b, 13b...Flat plate part, 2c, 3c12c, 13c...Sub-wall, 4...
Horizontal deflection magnetic field, 5... Vertical deflection magnetic field.
Claims (1)
イン形電子銃構体において、中央電子ビームと両
サイド電子ビーム間で、かつ垂直偏向磁界に対面
するようにそれぞれ配置された主壁と、これから
所定距離外側方向に離隔し、かつこれとほぼ平行
で、しかも前記サイド電子ビームの上下に配置さ
れた副壁とを有する磁界制御素子を具備すること
を特徴とするインライン形電子銃構体。 In an in-line electron gun structure that has a magnetic field control element on the tip side of the electron gun, a main wall is arranged between the central electron beam and both side electron beams and facing the vertical deflection magnetic field, and a main wall is arranged a predetermined distance outward from the main wall. 1. An in-line electron gun assembly comprising a magnetic field control element having sub-walls spaced apart from each other in the direction, substantially parallel to the side electron beam, and disposed above and below the side electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP122180U JPS638049Y2 (en) | 1980-01-11 | 1980-01-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP122180U JPS638049Y2 (en) | 1980-01-11 | 1980-01-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56104057U JPS56104057U (en) | 1981-08-14 |
| JPS638049Y2 true JPS638049Y2 (en) | 1988-03-09 |
Family
ID=29598109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP122180U Expired JPS638049Y2 (en) | 1980-01-11 | 1980-01-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS638049Y2 (en) |
-
1980
- 1980-01-11 JP JP122180U patent/JPS638049Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56104057U (en) | 1981-08-14 |
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