JPS6380531A - X-ray lithography apparatus - Google Patents

X-ray lithography apparatus

Info

Publication number
JPS6380531A
JPS6380531A JP61223798A JP22379886A JPS6380531A JP S6380531 A JPS6380531 A JP S6380531A JP 61223798 A JP61223798 A JP 61223798A JP 22379886 A JP22379886 A JP 22379886A JP S6380531 A JPS6380531 A JP S6380531A
Authority
JP
Japan
Prior art keywords
station
ray
radiation
wafers
sensitive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61223798A
Other languages
Japanese (ja)
Inventor
Daizaburo Osada
長田 大三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61223798A priority Critical patent/JPS6380531A/en
Publication of JPS6380531A publication Critical patent/JPS6380531A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Particle Accelerators (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To provide an X-ray lithography apparatus applicable to a wide range of wave lengths and having an increased lifetime, by connecting a station for mounting a radiation sensitive material and a station for removing it to the upstream and downstream sides of an X-ray exposure station, respectively, the X-ray exposure station being mounted to a beam duct for conducting SOR (synchrotron radiation). CONSTITUTION:When a pattern is transferred onto Si wafers by means of SOR, the Si wafers are mounted in alignment with an X-ray mask within a wafer mounting station 7. After this process is completed, a load lock 6a is opened so that the wafers are transported automatically from the station 7 to an X-ray exposure station 3. The load lock 6a is thereby closed and the station 7 starts the next cycle in which a new lot of wafers are mounted and aligned with masks. When exposure of the wafers is completed in the station 3, a load lock 6b is opened so that the wafers are transported automatically to a wafer removing station 8. The load lock 6b is then closed and, subsequently, the station 8 starts operations of removing the wafers and sending them to the next process. Thus, the operations required before and after the exposure can be carried out while the exposure is proceeded and the utilization efficiency of SOR can be improved substantially.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、X線リソグラフィ装置に関し、さらに詳し
くいうと、X線マスク上の微細パタンを、シンクロトロ
ン放射光を用いた軟X線照射により、半導体回路基板の
ような放射線感応材料上に転写するためのX線リソグラ
フィ装置に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an X-ray lithography apparatus, and more specifically, the present invention relates to an X-ray lithography apparatus, and more specifically, a method for forming fine patterns on an X-ray mask by soft X-ray irradiation using synchrotron radiation. , relates to an X-ray lithography apparatus for imprinting onto radiation-sensitive materials such as semiconductor circuit boards.

〔従来の技術〕[Conventional technology]

シンクロトロン放射光(以下、SORと略記する)を用
いてパタン転写を行うX線露光装置として、シンクロト
ロンリングから発生するSORをビームダクトによって
X線露光装置に導入する場合、7本のビームダクトに対
し7台のX線露光装置を配置する構成になるものがある
が、これは、SOR利用効率がきわめて低い。これを改
善するものとして、例えば、特開昭1.0−13232
4号公報に開示されたように、SORの放射方向を可変
にして複数台のX線露光装置へ導入するものが提案され
た。すなわち、第9図に示すように、シンクロトロンリ
ング(1)から発生するSORをX線露光装置に導入す
る7本のビームダクト(2)を複数本に分岐し、この分
岐したビームダクト(2a) 、 (2b) 、 (コ
C)ごとにそれぞれX線露光装置(7a) 、 (7b
) 、 C3c)を配置し、ビーム、ダクト分岐部(り
 K 、露光準備が完了しているX線露光装置に選択的
、かつ、時分割的にSORを供給する機能をもたせたも
のである。
In an X-ray exposure apparatus that transfers patterns using synchrotron radiation (hereinafter abbreviated as SOR), when the SOR generated from the synchrotron ring is introduced into the X-ray exposure apparatus through beam ducts, seven beam ducts are required. There is a configuration in which seven X-ray exposure devices are arranged, but this has extremely low SOR utilization efficiency. To improve this, for example, Japanese Patent Laid-Open No. 1.0-13232
As disclosed in Publication No. 4, it has been proposed to make the radiation direction of the SOR variable and introduce it into a plurality of X-ray exposure apparatuses. That is, as shown in FIG. 9, seven beam ducts (2) that introduce the SOR generated from the synchrotron ring (1) into the X-ray exposure apparatus are branched into multiple beam ducts (2 ), (2b), and (C) are equipped with X-ray exposure devices (7a) and (7b), respectively.
), C3c), and has the function of selectively and time-divisionally supplying SOR to the beam, duct branching section (RIK), and the X-ray exposure apparatus that is ready for exposure.

(5)は電磁石である。ビームダクト分岐部(4t)の
具体してSORの進路を変更する。あるいは、反射方向
をそれぞれ限定した反射面角度を有する複数個の反射ミ
ラーを配置し、選択的に個々の反射ミラーをSOR光路
に挿脱することKより、任意のX線露光装置にSORを
供給する。
(5) is an electromagnet. Specifically, the beam duct branch part (4t) changes the course of the SOR. Alternatively, by arranging a plurality of reflection mirrors each having a reflection surface angle that limits the reflection direction and selectively inserting and removing each reflection mirror into the SOR optical path, SOR can be supplied to any X-ray exposure device. do.

かようにして、SOR利用効率を向上しようとするもの
であった。
In this way, the attempt was made to improve the SOR utilization efficiency.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

以上のような従来のX線すソ′グラフィ装置け、反射ミ
ラーを用いてSOR進路変更を行うものであったため、
長期使用により反射ミラーの精度が低下する。換言すれ
ば、長寿命のものが得られないという問題点があった。
Conventional X-ray lithography equipment as described above uses a reflecting mirror to change the SOR path.
The accuracy of the reflecting mirror decreases with long-term use. In other words, there was a problem that a long-life product could not be obtained.

また、SORは、そのエネルギーが変わると波長領域も
変わるのであるが、これに対応して広範囲な波長領域に
適合する反射ミラーを得ることが、きわめて雌しいとb
う問題点があった。
In addition, in SOR, the wavelength range changes when the energy changes, and it is extremely important to obtain a reflecting mirror that is compatible with a wide range of wavelength ranges.
There was a problem.

この発明けかような問題点を解消するためになされたも
ので、広範囲な波長領域に対応することができ、かつ、
長寿命なX’1JIJノグラフィ装賛を得ることを目的
とする、 〔問題点を解決するための手段〕 この発明に係るX線リソグラフィ装置は、SORを導く
ビームダクトに装着されたX線露光ステーションの前後
に、放射線感応材料の装着ステーションと脱着ステーシ
ョンがそれぞれ連結されている。
This invention was made to solve the above problems, and can cover a wide range of wavelengths, and
[Means for solving the problem] An X-ray lithography apparatus according to the present invention aims to obtain long-life X'1JIJ photography support. A radiation-sensitive material loading station and a radiation-sensitive material loading/unloading station are connected to each other before and after the radiation sensitive material.

〔作 用〕[For production]

この発明においては、放射線感応材料へのバタン転写中
に、放射線感応材料の装着、脱着作業を並行して行うこ
とができる。
In the present invention, the work of attaching and detaching the radiation-sensitive material can be carried out in parallel while the button is being transferred to the radiation-sensitive material.

〔実施例〕〔Example〕

第1図はこの発明の一実施例を示し、図において、ビー
ムダクト(2)に、SORをふくむ水平面内に、X線露
光ステーション(3)が装着されている。X線g光ステ
ーション(3)の両側には、ロードロック(6a)、(
Ab)を介して、それぞれウェハ装着ステーション(7
)、ウェハ脱着ステーション(rlが、同一真空室とし
て連結されている。これらのステーション(7) 、 
(71、(ff+は、それぞれ独立に真空ポンプ(qa
) 、 (9b) 、 (?C)を有し、各ステーショ
ン個別の作業時にステーション間の性能に影響を及ぼさ
ないよう、ロードロック(6a)、(ab)と連動して
真空ポンプを操作するようになっている。ロードロック
(6a)、(6b)は、ステーション間の真空壁として
機能するものである。
FIG. 1 shows an embodiment of the present invention, in which an X-ray exposure station (3) is installed in a beam duct (2) in a horizontal plane that includes the SOR. On both sides of the X-ray g-light station (3) there are load locks (6a), (
Ab) respectively to the wafer mounting station (7).
), wafer desorption station (rl) are connected as the same vacuum chamber.These stations (7),
(71, (ff+ is each independently a vacuum pump (qa
), (9b), and (?C), and the vacuum pump is operated in conjunction with load locks (6a) and (ab) so as not to affect the performance between stations when each station works individually. It has become. The load locks (6a) and (6b) function as vacuum walls between the stations.

また、図示していないが、各ステーション(ワ)。Also, although not shown, each station (wa).

(71、(rl間は、放射線感応材料であるS1ウエハ
を自動的に搬送する機構を備えており、Siウェハはス
テーション(ワ)→(3)→(rlの順に搬送される。
(71, (rl) is equipped with a mechanism for automatically transporting the S1 wafer, which is a radiation-sensitive material, and the Si wafer is transported in the order of station (wa) → (3) → (rl).

z 以上の構成により、80Rによってs1ウェ〆くタン転
写を行う場合、ウェハ装着ステーション(ワ)内でS1
ウエハの装着とX線マスクとの位置合せを行う。これが
完了したあと、ロードロック(6a)を開け、ウェハ装
着ステーション(ワ)よりX線露光ステーション(3)
にSiウェハは自動搬送される。
z With the above configuration, when performing s1 wafer tan transfer using 80R, s1 is transferred in the wafer mounting station (wa).
Mount the wafer and align it with the X-ray mask. After this is completed, open the load lock (6a) and move from the wafer loading station (wa) to the X-ray exposure station (3).
The Si wafer is automatically transported.

そうすると、ロードロック(6a)は閉となり、ウェハ
装着ステーション(71は次のロットのS1ウエハの装
着およびX線マスクの位置合せ作業を開始する。一方、
X線露光ステーション(3)で81ウエハへのX線露光
が完了すると、コードロック(6b)を開け、X線露光
ステーション(3)よりウニノー脱着ステーション(f
f)にSiウエノ1は自動搬送され、ロードロック(6
b)は閉となり、引き続きウエノ・脱着ステーション(
、f)ではS1ウエハの脱着作業ヤS iウェハの次工
程送り作業が開始される。他方、X線露光ステーション
+71にはウェハ装着ステーショウエハ ン(ワ)から次のロットのS−ν赤1自動搬送され、X
線露光が開始される。
Then, the load lock (6a) is closed, and the wafer mounting station (71) starts mounting the next lot of S1 wafers and aligning the X-ray mask.Meanwhile,
When the X-ray exposure of 81 wafers is completed at the X-ray exposure station (3), the code lock (6b) is opened and the Uni-No desorption station (f) is removed from the X-ray exposure station (3).
In f), Si Ueno 1 is automatically transported and placed in a load lock (6
b) will be closed, and the ueno/desorption station (
, f), the work of attaching and demounting the S1 wafer and the work of transporting the S i wafer to the next process are started. On the other hand, the next lot of S-ν Red 1 is automatically transferred from the wafer mounting station to the X-ray exposure station +71.
Line exposure is started.

以上のようにX線露光ステーション(3)の前後にウェ
ハ装着ステーション(7)、ウェハ脱着ステーション(
、?)を設け、X線露光中に準備作業や後作業を行うこ
とができるので、SORの利用効率が大幅に改善される
As mentioned above, before and after the X-ray exposure station (3), there is a wafer mounting station (7) and a wafer demounting station (
,? ), and preparatory work and post-work can be performed during X-ray exposure, thereby greatly improving the efficiency of SOR utilization.

第コ図、第3図は他の実施例を示し、X線露光ステーシ
ョン<y)、ウェハ装着ステーション<7))およびウ
ェハ脱着ステーション(rlが、SORに垂直な平面に
配置されてなるものであり、その他、第1図におけると
同一符号は同一部分を示している。
Figures 1 and 3 show another embodiment in which the X-ray exposure station <y), the wafer mounting station <7)) and the wafer demounting station (rl) are arranged in a plane perpendicular to the SOR. Otherwise, the same reference numerals as in FIG. 1 indicate the same parts.

以上の構成でなるものは、各ステーション(3)S(7
1、(fflが、SORに垂直な平面に配置されている
点が第1図の場合と相違しているのみで、作用効果は全
(同様であり、説明は省略する。
With the above configuration, each station (3) S (7
1. The only difference from the case shown in FIG. 1 is that (ffl) is arranged on a plane perpendicular to the SOR, and the operation and effect are all the same, so the explanation will be omitted.

〔発明の効果〕〔Effect of the invention〕

この発明は、以上の説明から明らかなように、ビームダ
クトに装着されたX線露光ステーションの前後に放射線
感応材料の装着ステーションと脱着ステーションを設け
、X線露光中に放射線感応材料の準備や露光完了後の後
工程を独自に行えるよう圧したので、広範囲な波長領域
に対応してSOR連続光の利用効率を著しく向上し、か
つ、長寿命のものが得られるという効果がある。
As is clear from the above description, this invention provides a radiation-sensitive material loading station and a loading/unloading station before and after an X-ray exposure station installed in a beam duct, and prepares and exposes the radiation-sensitive material during X-ray exposure. Since post-processing after completion can be carried out independently, the use efficiency of SOR continuous light can be significantly improved in a wide range of wavelength ranges, and a product with a long life can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例の要部概略平面図、第二図
は他の実施例の要部概略平面図、第3図は第2図のもの
を矢印Aから見た要部概略側面図、第4図は従来のX線
リソグラフィ装置の要部概略平面図である。 (コ)・・ビームダクト、(3)・・X線露光ステーシ
ョン、(6a)、(6b)@eロードロック、(71−
−ウェハ(放射線感応材料)装着ステーション、(5)
・・ウェハ(放射線感応材料)脱着装置。 なお、各図中、同一符号は同−又は相当部分を示す。 第1図   1 2:ビームダクト 3°×1泉露光又ラーシヨン 6a、6b  ロードロック 7 つエバ(放射場応村料X艮看又ラージヨシ8 ウエ
ノ\(a射覗虻函応材荘)月1ステーション第3図
Fig. 1 is a schematic plan view of the main part of one embodiment of the present invention, Fig. 2 is a schematic plan view of the main part of another embodiment, and Fig. 3 is a schematic plan view of the main part of the embodiment of the invention as seen from arrow A. The side view and FIG. 4 are schematic plan views of main parts of a conventional X-ray lithography apparatus. (K)...Beam duct, (3)...X-ray exposure station, (6a), (6b)@e load lock, (71-
- wafer (radiation sensitive material) mounting station, (5)
...Wafer (radiation sensitive material) desorption device. In each figure, the same reference numerals indicate the same or corresponding parts. Figure 1 1 2: Beam duct 3° Station figure 3

Claims (4)

【特許請求の範囲】[Claims] (1)シンクロトロン放射光によりX線マスク上のパタ
ンを前記X線マスクの後方に配置した放射線感応材料に
転写するX線リソグラフィ装置において、前記シンクロ
トロン放射光のビームダクトに装着されたX線露光ステ
ーションと、このX線露光ステーションの前後にそれぞ
れ連結された放射線感応材料装着ステーションおよび放
射線感応材料脱着ステーションとを備えてなることを特
徴とするX線リソグラフィ装置。
(1) In an X-ray lithography apparatus that uses synchrotron radiation to transfer a pattern on an X-ray mask onto a radiation-sensitive material placed behind the X-ray mask, an X-ray beam attached to a beam duct for the synchrotron radiation is used. An X-ray lithography apparatus comprising an exposure station, and a radiation-sensitive material mounting station and a radiation-sensitive material demounting station connected before and after the X-ray exposure station, respectively.
(2)X線露光ステーションと放射線感応材料装着ステ
ーションおよび放射線感応材料脱着ステーションとの間
が、ロードロックにより仕切られている特許請求の範囲
第1項記載のX線リソグラフィ装置。
(2) The X-ray lithography apparatus according to claim 1, wherein the X-ray exposure station, the radiation-sensitive material mounting station, and the radiation-sensitive material removing station are separated by a load lock.
(3)X線露光ステーションと放射線感応材料装着ステ
ーションおよび放射線感応材料脱着ステーションとの間
に放射線感応材料を自動搬送する手段を備えた特許請求
の範囲第1項記載のX線リソグラフイ装置。
(3) The X-ray lithography apparatus according to claim 1, further comprising means for automatically transporting the radiation-sensitive material between the X-ray exposure station, the radiation-sensitive material mounting station, and the radiation-sensitive material demounting station.
(4)X線露光ステーションと放射線感応材料装着ステ
ーションと放射線感応材料脱着ステーションとの結合体
が、シンクロトロン放射光をふくむ水平面内および前記
シンクロトロン放射光に垂直な平面内のいずれかに配置
されている特許請求の範囲第1項記載のX線リソグラフ
ィ装置。
(4) A combination of an X-ray exposure station, a radiation-sensitive material mounting station, and a radiation-sensitive material demounting station is arranged either in a horizontal plane containing synchrotron radiation light or in a plane perpendicular to the synchrotron radiation light. An X-ray lithography apparatus according to claim 1.
JP61223798A 1986-09-24 1986-09-24 X-ray lithography apparatus Pending JPS6380531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61223798A JPS6380531A (en) 1986-09-24 1986-09-24 X-ray lithography apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61223798A JPS6380531A (en) 1986-09-24 1986-09-24 X-ray lithography apparatus

Publications (1)

Publication Number Publication Date
JPS6380531A true JPS6380531A (en) 1988-04-11

Family

ID=16803884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61223798A Pending JPS6380531A (en) 1986-09-24 1986-09-24 X-ray lithography apparatus

Country Status (1)

Country Link
JP (1) JPS6380531A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786156A (en) * 1993-07-21 1995-03-31 Canon Inc Processing system and device manufacturing method using the same
JPH1055073A (en) * 1997-04-24 1998-02-24 Tokyo Electron Ltd Dry developing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786156A (en) * 1993-07-21 1995-03-31 Canon Inc Processing system and device manufacturing method using the same
JPH1055073A (en) * 1997-04-24 1998-02-24 Tokyo Electron Ltd Dry developing device

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