JPS6381807A - 単結晶シリコン薄膜の製造方法 - Google Patents

単結晶シリコン薄膜の製造方法

Info

Publication number
JPS6381807A
JPS6381807A JP61225900A JP22590086A JPS6381807A JP S6381807 A JPS6381807 A JP S6381807A JP 61225900 A JP61225900 A JP 61225900A JP 22590086 A JP22590086 A JP 22590086A JP S6381807 A JPS6381807 A JP S6381807A
Authority
JP
Japan
Prior art keywords
crystal silicon
single crystal
thin film
film
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61225900A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519976B2 (cs
Inventor
Toshiaki Miyajima
利明 宮嶋
Masayoshi Koba
木場　正義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61225900A priority Critical patent/JPS6381807A/ja
Priority to DE8686117799T priority patent/DE3685732T2/de
Priority to EP86117799A priority patent/EP0227076B1/en
Priority to US06/943,428 priority patent/US4801351A/en
Publication of JPS6381807A publication Critical patent/JPS6381807A/ja
Publication of JPH0519976B2 publication Critical patent/JPH0519976B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP61225900A 1985-12-20 1986-09-26 単結晶シリコン薄膜の製造方法 Granted JPS6381807A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61225900A JPS6381807A (ja) 1986-09-26 1986-09-26 単結晶シリコン薄膜の製造方法
DE8686117799T DE3685732T2 (de) 1985-12-20 1986-12-19 Verfahren zur herstellung einer monokristallinen duennen schicht.
EP86117799A EP0227076B1 (en) 1985-12-20 1986-12-19 Method of manufacturing monocrystal thin-film
US06/943,428 US4801351A (en) 1985-12-20 1986-12-19 Method of manufacturing monocrystalline thin-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61225900A JPS6381807A (ja) 1986-09-26 1986-09-26 単結晶シリコン薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6381807A true JPS6381807A (ja) 1988-04-12
JPH0519976B2 JPH0519976B2 (cs) 1993-03-18

Family

ID=16836644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61225900A Granted JPS6381807A (ja) 1985-12-20 1986-09-26 単結晶シリコン薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6381807A (cs)

Also Published As

Publication number Publication date
JPH0519976B2 (cs) 1993-03-18

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Legal Events

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EXPY Cancellation because of completion of term