JPS6410670A - Manufacture of bipolar transistor - Google Patents

Manufacture of bipolar transistor

Info

Publication number
JPS6410670A
JPS6410670A JP62166533A JP16653387A JPS6410670A JP S6410670 A JPS6410670 A JP S6410670A JP 62166533 A JP62166533 A JP 62166533A JP 16653387 A JP16653387 A JP 16653387A JP S6410670 A JPS6410670 A JP S6410670A
Authority
JP
Japan
Prior art keywords
nitride film
external diffusion
diffusion preventing
region
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62166533A
Other languages
Japanese (ja)
Other versions
JP2576513B2 (en
Inventor
Yoshio Ueki
Mitsuru Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62166533A priority Critical patent/JP2576513B2/en
Publication of JPS6410670A publication Critical patent/JPS6410670A/en
Application granted granted Critical
Publication of JP2576513B2 publication Critical patent/JP2576513B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent effectively the impurity diffusion of a semiconductor surface, by arranging an external diffusion preventing nitride film on an oxide film, and eliminating the external diffusion preventing nitride film at least before the ion implantation for emitter region formation. CONSTITUTION:Via an oxide film 4 and an external diffusion preventing nitride film 5, phosphorus and boron are implanted in order in an N-type epitaxial layer 3. On account of thermal diffusion, the respective regions in which impurity is introduced by ion implantation are activated, and an N<+> type collector lead-out region 9 and an element isolation region 8 are formed. As an external diffusion preventing nitride film 5 to prevent external diffusion is stacked on an oxide film 4, impurity is prevented from being introduced into the surface of the N-type epitaxial layer 3, and the characteristics are stabilized. Then the external diffusion preventing nitride film 5 is eliminated. Thereby, the ion implantation for forming a base region 10 and a graft base region 11 or an emitter region is enabled without changing a usual process.
JP62166533A 1987-07-03 1987-07-03 Method for manufacturing bipolar transistor Expired - Lifetime JP2576513B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166533A JP2576513B2 (en) 1987-07-03 1987-07-03 Method for manufacturing bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166533A JP2576513B2 (en) 1987-07-03 1987-07-03 Method for manufacturing bipolar transistor

Publications (2)

Publication Number Publication Date
JPS6410670A true JPS6410670A (en) 1989-01-13
JP2576513B2 JP2576513B2 (en) 1997-01-29

Family

ID=15833057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166533A Expired - Lifetime JP2576513B2 (en) 1987-07-03 1987-07-03 Method for manufacturing bipolar transistor

Country Status (1)

Country Link
JP (1) JP2576513B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345974A (en) * 1976-10-07 1978-04-25 Nec Corp Manufacture of semiconductor integrated circuit device
JPS6038871A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Manufacture of bipolar type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345974A (en) * 1976-10-07 1978-04-25 Nec Corp Manufacture of semiconductor integrated circuit device
JPS6038871A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Manufacture of bipolar type semiconductor device

Also Published As

Publication number Publication date
JP2576513B2 (en) 1997-01-29

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