JPS6411318A - Method of processing semiconductor crystal - Google Patents

Method of processing semiconductor crystal

Info

Publication number
JPS6411318A
JPS6411318A JP16824187A JP16824187A JPS6411318A JP S6411318 A JPS6411318 A JP S6411318A JP 16824187 A JP16824187 A JP 16824187A JP 16824187 A JP16824187 A JP 16824187A JP S6411318 A JPS6411318 A JP S6411318A
Authority
JP
Japan
Prior art keywords
layer
upper side
semiconductor crystal
processing semiconductor
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16824187A
Other languages
Japanese (ja)
Inventor
Hisao Hayashi
Takefumi Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP16824187A priority Critical patent/JPS6411318A/en
Publication of JPS6411318A publication Critical patent/JPS6411318A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a single-crystalline semiconductor layer which has no damage and is good in its crystallinity, by polishing an upper side of a semiconductor layer and next making the surface layer become amorphous and afterwards by using solid-phase growth to perform recrystallization. CONSTITUTION:After an SiO2 film 2 is formed on an Si substrate 1, a prescribed pattern is formed by etching, and a selective epitaxial growth method is used to form a single-crystalline Si layer 3 on this SiO2 film 2. Next, an upper side 4 of the Si layer 3 is polished to thin the whole surface in order to manufacture a semiconductor device. In this polishing process, implantation of Si ions 6 is performed to make the surface 5 of the Si layer 3 amorphous.
JP16824187A 1987-07-06 1987-07-06 Method of processing semiconductor crystal Pending JPS6411318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16824187A JPS6411318A (en) 1987-07-06 1987-07-06 Method of processing semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16824187A JPS6411318A (en) 1987-07-06 1987-07-06 Method of processing semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS6411318A true JPS6411318A (en) 1989-01-13

Family

ID=15864377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16824187A Pending JPS6411318A (en) 1987-07-06 1987-07-06 Method of processing semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS6411318A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195503A (en) * 2011-03-17 2012-10-11 Lintec Corp Thin semiconductor device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195503A (en) * 2011-03-17 2012-10-11 Lintec Corp Thin semiconductor device manufacturing method

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